KR101159305B1 - Ｍｏｓｆｅｔ 집적 회로에서 공정-유도 성능 변동을 보상하는 방법 - Google Patents

Ｍｏｓｆｅｔ 집적 회로에서 공정-유도 성능 변동을 보상하는 방법 Download PDF

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KR101159305B1
KR101159305B1 KR1020097022852A KR20097022852A KR101159305B1 KR 101159305 B1 KR101159305 B1 KR 101159305B1 KR 1020097022852 A KR1020097022852 A KR 1020097022852A KR 20097022852 A KR20097022852 A KR 20097022852A KR 101159305 B1 KR101159305 B1 KR 101159305B1
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transistor
analysis
threshold voltage
drive current
compensation
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KR20090133129A (ko
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빅터 모로즈
디팬카르 프라마니크
키쇼어 싱핼
자이-웨이 린
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시놉시스, 인크.
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/36—Circuit design at the analogue level
    • G06F30/367—Design verification, e.g. using simulation, simulation program with integrated circuit emphasis [SPICE], direct methods or relaxation methods
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36—Unipolar devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Evolutionary Computation (AREA)
  • Geometry (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1020097022852A 2007-06-01 2008-01-17 Ｍｏｓｆｅｔ 집적 회로에서 공정-유도 성능 변동을 보상하는 방법 Active KR101159305B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/757,338 US7949985B2 (en) 2007-06-01 2007-06-01 Method for compensation of process-induced performance variation in a MOSFET integrated circuit
US11/757,338 2007-06-01
PCT/US2008/051355 WO2008150555A1 (en) 2007-06-01 2008-01-17 Method for compensation of process-induced performance variation in a mosfet integrated circuit

Publications (2)

Publication Number Publication Date
KR20090133129A KR20090133129A (ko) 2009-12-31
KR101159305B1 true KR101159305B1 (ko) 2012-06-25

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KR1020097022852A Active KR101159305B1 (ko) 2007-06-01 2008-01-17 Ｍｏｓｆｅｔ 집적 회로에서 공정-유도 성능 변동을 보상하는 방법

Country Status (7)

Country Link
US (2) US7949985B2 (https=)
EP (1) EP2153239A4 (https=)
JP (1) JP5261479B2 (https=)
KR (1) KR101159305B1 (https=)
CN (1) CN101675348A (https=)
TW (1) TWI392028B (https=)
WO (1) WO2008150555A1 (https=)

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US7949985B2 (en) * 2007-06-01 2011-05-24 Synopsys, Inc. Method for compensation of process-induced performance variation in a MOSFET integrated circuit
US8176444B2 (en) * 2009-04-20 2012-05-08 International Business Machines Corporation Analyzing multiple induced systematic and statistical layout dependent effects on circuit performance
US20120042292A1 (en) * 2010-08-10 2012-02-16 Stmicroelectronics S.A. Method of synthesis of an electronic circuit
US8776005B1 (en) 2013-01-18 2014-07-08 Synopsys, Inc. Modeling mechanical behavior with layout-dependent material properties
US8832619B2 (en) * 2013-01-28 2014-09-09 Taiwan Semiconductor Manufacturing Co., Ltd. Analytical model for predicting current mismatch in metal oxide semiconductor arrays
US9665675B2 (en) 2013-12-31 2017-05-30 Texas Instruments Incorporated Method to improve transistor matching
CN105740572B (zh) * 2016-02-26 2019-01-15 联想(北京)有限公司 一种电子设备
EP3760196B1 (en) * 2018-02-28 2024-12-18 Petroeuroasia Co., Ltd. Reduced coenzyme q10-containing composition and method for producing same
CN119997585B (zh) * 2025-04-14 2025-07-22 合肥晶合集成电路股份有限公司 一种半导体器件的制作方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3882391A (en) * 1973-06-25 1975-05-06 Ibm Testing the stability of MOSFET devices

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US6598214B2 (en) * 2000-12-21 2003-07-22 Texas Instruments Incorporated Design method and system for providing transistors with varying active region lengths
US20040038489A1 (en) 2002-08-21 2004-02-26 Clevenger Lawrence A. Method to improve performance of microelectronic circuits
JP4408613B2 (ja) * 2002-09-25 2010-02-03 Ｎｅｃエレクトロニクス株式会社 トランジスタの拡散層長依存性を組み込んだ回路シミュレーション装置およびトランジスタモデル作成方法
US6928635B2 (en) * 2002-09-25 2005-08-09 Numerical Technologies, Inc. Selectively applying resolution enhancement techniques to improve performance and manufacturing cost of integrated circuits
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Publication number Priority date Publication date Assignee Title
US3882391A (en) * 1973-06-25 1975-05-06 Ibm Testing the stability of MOSFET devices

Also Published As

Publication number Publication date
US20080297237A1 (en) 2008-12-04
JP2010529649A (ja) 2010-08-26
JP5261479B2 (ja) 2013-08-14
EP2153239A4 (en) 2011-08-17
US8219961B2 (en) 2012-07-10
KR20090133129A (ko) 2009-12-31
EP2153239A1 (en) 2010-02-17
US7949985B2 (en) 2011-05-24
TWI392028B (zh) 2013-04-01
WO2008150555A1 (en) 2008-12-11
TW200849408A (en) 2008-12-16
US20110219351A1 (en) 2011-09-08
CN101675348A (zh) 2010-03-17

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