KR101138964B1 - Test socket - Google Patents
Test socket Download PDFInfo
- Publication number
- KR101138964B1 KR101138964B1 KR1020100012904A KR20100012904A KR101138964B1 KR 101138964 B1 KR101138964 B1 KR 101138964B1 KR 1020100012904 A KR1020100012904 A KR 1020100012904A KR 20100012904 A KR20100012904 A KR 20100012904A KR 101138964 B1 KR101138964 B1 KR 101138964B1
- Authority
- KR
- South Korea
- Prior art keywords
- conductive
- connection electrode
- pin
- test socket
- hole
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 33
- 238000003780 insertion Methods 0.000 claims abstract description 21
- 230000000875 corresponding Effects 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 239000004593 Epoxy Substances 0.000 claims description 5
- 125000003700 epoxy group Chemical group 0.000 claims description 5
- 229910000679 solder Inorganic materials 0.000 claims description 5
- 238000007747 plating Methods 0.000 description 11
- 230000005540 biological transmission Effects 0.000 description 9
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229920001721 Polyimide Polymers 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical class [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/04—Housings; Supporting members; Arrangements of terminals
- G01R1/0408—Test fixtures or contact fields; Connectors or connecting adaptors; Test clips; Test sockets
- G01R1/0433—Sockets for IC's or transistors
- G01R1/0441—Details
- G01R1/0466—Details concerning contact pieces or mechanical details, e.g. hinges or cams; Shielding
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R12/00—Structural associations of a plurality of mutually-insulated electrical connecting elements, specially adapted for printed circuits, e.g. printed circuit boards [PCBs], flat or ribbon cables, or like generally planar structures, e.g. terminal strips, terminal blocks; Coupling devices specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures; Terminals specially adapted for contact with, or insertion into, printed circuits, flat or ribbon cables, or like generally planar structures
- H01R12/70—Coupling devices
- H01R12/71—Coupling devices for rigid printing circuits or like structures
- H01R12/712—Coupling devices for rigid printing circuits or like structures co-operating with the surface of the printed circuit or with a coupling device exclusively provided on the surface of the printed circuit
- H01R12/714—Coupling devices for rigid printing circuits or like structures co-operating with the surface of the printed circuit or with a coupling device exclusively provided on the surface of the printed circuit with contacts abutting directly the printed circuit; Button contacts therefore provided on the printed circuit
Abstract
The present invention relates to a test socket, and more particularly, to a test socket disposed between a semiconductor device and a test apparatus 90 for electrically connecting a terminal of a semiconductor device and a pad of the test apparatus 90, wherein the semiconductor A first sheet member supporting the first connection electrode disposed at a position corresponding to the terminal of the device; A housing disposed below the first sheet member and having a through hole extending in a vertical direction at a position corresponding to the first connection electrode; A conductive member inserted into the through hole of the housing and contacting a lower surface of the first connection electrode and having an insertion hole extending in a vertical direction in a center thereof; A conductive pin inserted into the through hole of the housing and positioned below the conductive member, the lower end of which protrudes from the through hole, and the upper end of which is inserted into the insertion hole of the conductive member to be in contact with the inner wall of the insertion hole; And a spring member disposed between the conductive member and the conductive pin to elastically bias the conductive member and the conductive pin in a direction away from each other.
Description
The present invention relates to a test socket, and more particularly, to a test socket capable of stably contacting a terminal of a semiconductor device having a fine pitch to a test socket.
In general, a semiconductor device manufactured is subjected to a predetermined defect inspection in order to determine whether there is a defect. For this purpose, whether the semiconductor device is defective may be determined by an electrical signal from the test apparatus while the semiconductor device is electrically connected to the test apparatus. In this case, when the terminal of the semiconductor device is in direct contact with the pad of the test apparatus, the pad of the test apparatus may be damaged, and in particular, the pad of the test apparatus may be worn while inspecting a large number of semiconductor devices. Will be.
Accordingly, the semiconductor device and the test apparatus are indirectly connected to each other by using a test socket that is a mediator separate from the test apparatus.
As such a test socket, various structures, such as a pogo pin and an anisotropic conductive sheet, are used. As an example of such a test socket 100, as shown in FIG. 1, a spring 120 is inserted into a housing 110 in which a plurality of through holes 111 are formed, and the semiconductor device ( The structure in which the terminal 141 of the 140 is connected to the pad 131 of the test apparatus 130 is known.
However, in the prior art, the electrical signal from the pad of the test apparatus has a long distance to the terminal of the semiconductor device, that is, a current pass, and also flows while the signal is turning, causing a lot of resistance in the case of a high frequency signal. There is a disadvantage such as.
2 is a test socket different from the related art of FIG. 1, wherein the test socket 200 includes an inner spring 221 formed of a close contact portion and an elastic portion in a through hole 211 of the housing 210, and an outer spring 220. Inserted into and placed in the electrical signal is transmitted through the close contact portion so that the effect of improving the signal transmission characteristics. The terminal 141 of the semiconductor device 140 is connected to the pad 131 of the test apparatus 130 through the inner spring and the outer spring.
However, this prior art has a problem that it is difficult to be applied to a semiconductor device having a narrow pitch between terminals. That is, in order to contact terminals with fine pitch, the distance between adjacent through holes and the diameter of each through hole must also be reduced. There is a limit in reducing the outer diameter of the spring, especially the diameter of the spring inserted inside the double spring. Since this has to be more than a certain amount, there is a disadvantage in that it is not easy to apply to fine pitch.
In addition, in order to increase the signal transmission characteristics of the outer spring and the inner spring, there is a case in which plating is performed, but there is a disadvantage that the plating is not easy when the diameter of the outer spring is reduced.
3 is another test socket according to the related art, in which the plating layer 311 is formed on the inner wall of the through hole of the housing 310 and the pin 321 and the spring 320 are inserted into the test socket 300. As the plating layer 311 is in contact with each other, electrical signal transmission characteristics may be improved. The signal flows through the terminal 141 of the semiconductor device 140 to the terminal 131 of the test apparatus 130 via the pin 321, the plating layer 311, and the lower end of the spring.
However, in the prior art, the thickness of the spring and the pin is inevitably reduced due to the plating layer formed on the inner wall, and as described above, there is a limit in reducing the diameter of the spring. There is a problem that is difficult to apply to. In addition, such a test socket has a disadvantage in that the signal transmission property is inevitably reduced when the plating layer is peeled off by repeated use.
SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the present invention is to provide a test socket which is excellent in signal transmission characteristics and which is easy to manufacture and which can be easily applied to a test for a semiconductor device having a fine pitch terminal. do.
The test socket according to the present invention for achieving the above object is a test socket disposed between the semiconductor device and the test device 90 to electrically connect the terminals of the semiconductor device and the pad of the test device 90. ,
A first sheet member supporting a first connection electrode disposed at a position corresponding to the terminal of the semiconductor device;
A housing disposed below the first sheet member and having a through hole extending in a vertical direction at a position corresponding to the first connection electrode;
A conductive member inserted into the through hole of the housing and contacting a lower surface of the first connection electrode and having an insertion hole extending in a vertical direction in a center thereof;
A conductive pin inserted into the through hole of the housing and positioned below the conductive member, the lower end of which protrudes from the through hole, and the upper end of which is inserted into the insertion hole of the conductive member to be in contact with the inner wall of the insertion hole; And
And a spring member disposed between the conductive member and the conductive pin to elastically bias the conductive member and the conductive pin in a direction away from each other.
In the test socket,
The conductive pin,
An upper pin portion smaller than an inner diameter of the spring member and having a diameter equal to the inner diameter of the insertion hole and inserted into the insertion hole through the spring member;
The stepped portion is formed at the upper end to allow the spring member to be seated, and the diameter is larger than the inner diameter of the spring member, and preferably consists of a lower pin portion connected to the upper pin portion integrally.
In the test socket,
It is preferable to further include a second sheet member disposed below the conductive pin in a position corresponding to the conductive pin and supporting the second connection electrode in contact with the lower end of the conductive pin.
In the test socket, the first connection electrode and the conductive member are preferably bonded by solder or conductive epoxy.
In the test socket,
Preferably, the lower side of the conductive pin is integrally formed with a protruding portion protruding to the outside of the housing while having a larger diameter than the through hole.
In the test socket,
The conductive member is made of a wire wound spirally formed integrally with the spring member, it is preferable that the wire is wound in close contact.
In the test socket,
The conductive member is preferably a cylinder made of a conductive metal.
In the test socket according to the present invention, a separate conductive member and a conductive pin are directly in contact with the spring member, and the spring member is inserted into the conductive pin so that the thickness of the spring can be maintained more than a predetermined time while improving signal transmission characteristics. There is this.
In addition, there is an advantage that it is possible to achieve a sufficient signal transmission characteristics without having to form a plating layer inside the spring.
1 is a diagram of a test socket according to the prior art;
2 is a view of a test socket according to another prior art.
3 is a view of a test socket according to another prior art.
4 is a diagram of a test socket in accordance with a preferred embodiment of the present invention.
5 is an operation of FIG.
6 is a view of a test socket according to another embodiment of the present invention.
Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.
The test socket 10 according to the preferred embodiment of the present invention may be connected to the semiconductor device 80 and the terminal 81 of the semiconductor device 80 and the pad 91 of the test apparatus 90. As disposed between the test apparatus 90, the first sheet member 20, the housing 30, the conductive member 40, the conductive pin 50, the spring member 60, and the second sheet member 70. Is made of.
The first sheet member 20 has a first connection electrode 21 disposed at a position corresponding to the terminal 81 of the semiconductor device 80, and has a function of supporting each first connection electrode 21. Will perform. The first sheet member 20 is not particularly limited as long as it is an insulating flexible material. For example, a resin sheet made of a polyimide resin, a liquid crystal polymer, polyester, a fluorine resin, or the like, and the above-described resin Although an impregnated sheet etc. can be used, a polyimide is preferable.
The first connection electrode 21 is connected to the terminal 81 of the semiconductor device 80 and the conductive member 40 in a state of being supported by the first sheet member 20. The first connection electrode 21 is preferably used as a metal material having excellent electrical conductivity. In particular, nickel, copper, gold, silver, palladium, iron, or the like may be used, and even if the whole is made of a single metal, It may be made of an alloy of two or more metals or a laminate of two or more metals. On the other hand, the first connection electrode 21 may be formed on the surface thereof with a chemically stable and conductive metal film such as gold, silver, palladium and the like.
The housing 30 is disposed below the first sheet member 20 and has a through hole 31 extending in a vertical direction at a position corresponding to the first connection electrode 21. Such a housing 30 may be used in engineering plastics and other various synthetic resin materials having excellent insulation and high strength.
The conductive member 40 is inserted into the through hole 31 of the housing 30 and is in contact with the bottom surface of the first connection electrode 21 and has a metallic insertion hole 41 extending in the vertical direction in the center thereof. Is a conductor. The upper portion of the conductive member 40 is joined to the lower surface of the first connection electrode 21 by solder or conductive epoxy, and thus can be raised or lowered together with the first connection electrode 21. On the other hand, a conductive pin 50 is inserted into the insertion hole 41 so that the conductive member 40 is directly electrically connected to the conductive pin 50.
The conductive member 40 may have a structure in which a wire is spirally wound in the same manner as the spring member 60. However, the difference from the spring member 60 is that the conductive member 40 is the wires are wound close to each other. In this way, when the wire is closely wound and wound, the electrical signal does not flow while turning along the wire, but can flow in a straight line in a vertical direction. On the other hand, the conductive member 40 is integrally connected with the spring member 60 is preferably manufactured with the spring member 60, in addition to the spring member 60 may be assembled separately. On the other hand, the element wire is preferably used as a metal material excellent in electrical conductivity.
The conductive pin 50 is inserted into the through hole 31 of the housing 30 and is located below the conductive member 40, and a lower end thereof protrudes from the through hole 31. The upper end of the conductive pin 50 is inserted into the insertion hole 41 of the conductive member 40 and is in direct contact with the inner wall of the insertion hole 41 so that the conductive pin 50 is electrically connected to the conductive member 40.
The conductive pin 50 is composed of an upper pin portion 51 and a lower pin portion 52.
The upper pin portion 51 forms the upper side of the conductive pin 50, and has a shape of a win column as a whole, and the outer diameter thereof is smaller than the inner diameter of the spring member 60 so that it is inserted into the spring member 60. Can be. In addition, the outer diameter of the upper pin portion 51 is almost the same as or slightly smaller than the inner diameter of the insertion hole 41 can be in direct contact with the inner diameter of the insertion hole 41. However, in the case of the same as the inner diameter of the insertion hole 41, it is not preferable because the pin member is difficult to move inside the conductive pin 50. That is, it is preferable to have an outer diameter enough to be able to contact the electrically conductive pin 50 while moving. The upper pin portion 51 may be formed with a chemically stable and conductive metal film such as gold, silver, palladium, etc. on its surface in order to provide excellent electrical conduction with the spring member 60.
The lower pin portion 52 has a stepped portion formed at an upper end thereof so that the spring member 60 can be seated, and the diameter is larger than the inner diameter of the spring member 60 and integrally connected to the upper pin portion 51. Will be. The lower pin portion 52 has a diameter larger than the diameter of the upper pin portion 51 and has a cylindrical shape as a whole, but is preferably formed to decrease in diameter toward the lower side.
On the other hand, the lower pin portion 52 is preferably bonded to the second connection electrode 71 disposed at the bottom by solder or conductive epoxy.
The spring member 60 is disposed between the conductive member 40 and the conductive pin 50 to elastically bias the conductive member 40 and the conductive pin 50 in a direction away from each other. The conductive member 40 absorbs the reaction force when the conductive member 40 is lowered by the semiconductor device 80, and the terminal 81 and the first connection electrode 21 of the semiconductor device 80 closely adhere to each other. And the terminal 81 and the second connection electrode 71 of the test apparatus 90 may be in close contact with each other. The spring member 60 is a conventional spring in which the element wires are wound in a spiral shape, and the element elements are arranged to be spaced apart in the vertical direction. In this regard, there is a difference from the conductive member 40. However, the spring member 60 and the conductive member 40 is made of one wire is connected.
On the other hand, the lower side of the spring member 60 may be formed to narrow the inner diameter toward the lower side. Specifically, it is preferable that the lower end of the spring member is narrowed to the outer diameter of the upper pin portion 51 so as to be fit. That is, the middle or the upper side of the spring member is slightly larger than the outer diameter of the upper pin portion 51 to allow the spring member to be compressed or extended, and the lower side is pressed against the upper pin portion to prevent the spring member. Can be suppressed from moving up and down unnecessarily. However, the structure for the interference fit is not limited to this, it is possible that the spring member is forcibly fitted to the upper pin portion by slightly increasing the outer diameter of the portion requiring the interference fit in the upper pin portion.
The second sheet member 70 corresponds to the first sheet member 20. The difference is that a second connection electrode 71 corresponding to the first connection electrode 21 is disposed below the housing 30. And the second connection electrode 71 is in contact with the conductive pin 50. The second connection electrode 71 and the conductive pin 50 are bonded to each other by solder and conductive epoxy. Of course, in addition to this can be bonded by a variety of materials and it is also possible to be in contact only with each other without a bonding material. This may be equally applied to the first connection electrode 21 and the conductive member 40.
The test socket 10 according to the preferred embodiment of the present invention has the following effects.
First, while the test socket 10 is mounted on the test apparatus 90, the semiconductor device 80 descends to press the test socket 10. That is, when the terminal 81 of the semiconductor device 80 presses the first connection electrode 21, the first connection electrode 21 descends while lowering the conductive member 40, and with this, the conductive pin 50 The upper pin portion 51 of the c) is more deeply inserted into the insertion hole 41 of the conductive member 40, and is surely in contact with the conductive member 40. In this situation, since the spring member 60 is compressed and elastic repulsion occurs, the conductive member 40 and the pin member are pushed away from each other. Accordingly, the first connection electrode 21 and the terminal 81 of the semiconductor device 80 are pushed away. And the pad 91 of the second connecting electrode 71 and the test apparatus 90 may be in close contact with each other.
Meanwhile, when a predetermined signal is applied from the test apparatus 90, the signal is transmitted to the semiconductor device 80 via the test socket 10 and the signal flowing through the semiconductor device 80 is as shown in FIG. 5. You have a path. That is, it flows through the conductive member 40 through the first connecting electrode 21, and then through the upper pin portion 51 and the lower pin portion 52 through the second connecting electrode 71 through the pad 91 Leads to
On the other hand, since all signals can flow linearly, the signal transmission path is shortened and the transmission characteristics are excellent. In addition, even when a high frequency signal is used, there is little concern about inductance generation, and thus it can be easily used.
The test socket according to the preferred embodiment of the present invention has the following effects.
First of all, the test socket according to the preferred embodiment of the present invention has an advantage that the current transfer path is shortened because there is almost no rotational movement of the signal through the spring, so that the transfer efficiency is excellent.
In addition, the test socket according to a preferred embodiment of the present invention is easy to manufacture a fine pitch. In the test socket according to the prior art, the prior art shown in FIG. 2 has a structure in which the inner spring is fitted into the outer spring and coupled thereto. There is also the problem of difficulty. In particular, to reduce the diameter of the through-hole while reducing the diameter of the through-hole in order to match the fine pitch is too easy to manufacture the diameter is reduced. On the other hand, in the embodiment according to the present invention, since the upper pin portion of the conductive pin is inserted into the spring and the spring is fitted to the outside thereof, the inner diameter of the through hole can be sufficiently reduced accordingly.
In addition, in the prior art illustrated in FIG. 3, a plating layer is formed inside the through hole, and the thickness of the spring is inevitably reduced due to the thickness of the plating layer. Therefore, when the diameter of the through-holes is reduced, the diameter of the springs can be reduced to a large width accordingly. There is no such problem to reduce due to the plating layer.
The test socket of the present invention may be modified as follows.
In the above-described embodiment, the second sheet member provided with the second connection electrode is disposed under the conductive pin, but the present invention is not limited thereto, and the protrusion 53 may be formed as shown in FIG. 6. At this time, the protrusion 53 is formed integrally with the lower pin portion 52 below the lower pin portion 52 of the conductive pin, and has a larger diameter than the through hole, so that the protrusion 53 is not inserted into the through hole. It protrudes outward. In this case, since there is no need to arrange the second connection electrode and the sheet member, the manufacturing cost is reduced.
In addition, in the above-described embodiment, the conductive member 40 has been described as having a spring-like structure in which the element wire is in close contact with the wire, but is not limited thereto. It is also possible to have a cylindrical shape made of a conductive metal as shown in FIG. At this time, the conductive member is disposed on the upper side of the spring member, the upper end of the conductive pin is fitted therein.
The test socket of the present invention described above is not limited thereto, and the scope of rights may be extended as long as it can be interpreted by the claims.
10 Test socket 20 Seat member
21 First connecting electrode 30 Housing
31 through-hole 40 ... conductive member
41.Insert hole 50 ... Conductive pin
51 ... upper pin 52 ... upper pin
53 ... projection 60 ... spring member
70 second sheet member 71 second connection electrode
Claims (8)
A first sheet member supporting a first connection electrode disposed at a position corresponding to the terminal of the semiconductor device;
A housing disposed below the first sheet member and having a through hole extending in a vertical direction at a position corresponding to the first connection electrode;
A conductive pin inserted into the through hole of the housing and having a lower end thereof protruding from the through hole;
A spring member disposed between the first connection electrode and the conductive pin and elastically biasing the conductive pin in a direction away from the first connection electrode; And
And a second sheet member disposed below the conductive pin in a position corresponding to the conductive pin and supporting the second connection electrode in contact with the lower end of the conductive pin.
A conductive member inserted into the through hole of the housing and disposed between the first connection electrode and the conductive pin and having an insertion hole extending in a vertical direction in a center thereof;
And the upper end of the conductive pin is inserted into the insertion hole of the conductive member to be in contact with the inner wall of the insertion hole.
And the first connection electrode and the conductive member are joined by solder or conductive epoxy.
The conductive member is a test socket, characterized in that the wire is formed integrally with the spring member is wound in a spiral, the wires are wound in close contact.
The conductive member is a test socket, characterized in that the cylinder made of a conductive metal.
The conductive pin,
An upper pin portion smaller than an inner diameter of the spring member and having a diameter equal to the inner diameter of the insertion hole and inserted into the insertion hole through the spring member;
A test socket, characterized in that the stepped portion is formed on the upper end to allow the spring member to be seated, the diameter of which is greater than the inner diameter of the spring member and consists of a lower pin portion integrally connected to the upper pin portion.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020100012904A KR101138964B1 (en) | 2010-02-11 | 2010-02-11 | Test socket |
PCT/KR2011/000955 WO2011099822A2 (en) | 2010-02-11 | 2011-02-11 | Test socket |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020100012904A KR101138964B1 (en) | 2010-02-11 | 2010-02-11 | Test socket |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20110093085A KR20110093085A (en) | 2011-08-18 |
KR101138964B1 true KR101138964B1 (en) | 2012-04-25 |
Family
ID=44368337
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020100012904A KR101138964B1 (en) | 2010-02-11 | 2010-02-11 | Test socket |
Country Status (2)
Country | Link |
---|---|
KR (1) | KR101138964B1 (en) |
WO (1) | WO2011099822A2 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160001723A (en) | 2013-10-23 | 2016-01-07 | 주식회사 아테코 | Test device insert and electronic component test apparatus |
KR20160119942A (en) * | 2015-04-06 | 2016-10-17 | 에스케이하이닉스 주식회사 | Semiconductor package with socket plug interconnection |
KR101793717B1 (en) * | 2015-08-07 | 2017-11-03 | 조인셋 주식회사 | Electric Connecting Terminal |
KR102270275B1 (en) * | 2020-04-10 | 2021-06-28 | 주식회사 오킨스전자 | Test socket |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR200163193Y1 (en) | 1999-07-01 | 2000-02-15 | 리노공업주식회사 | Separate socket device for probing chip |
JP2001116795A (en) * | 1999-10-18 | 2001-04-27 | Mitsubishi Electric Corp | Test socket and connection sheet for use in test socket |
JP2003084047A (en) | 2001-06-29 | 2003-03-19 | Sony Corp | Measuring jig for semiconductor device |
KR200313240Y1 (en) * | 2003-02-27 | 2003-05-17 | (주)티에스이 | Test socket for ball grid array package |
-
2010
- 2010-02-11 KR KR1020100012904A patent/KR101138964B1/en not_active IP Right Cessation
-
2011
- 2011-02-11 WO PCT/KR2011/000955 patent/WO2011099822A2/en active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR200163193Y1 (en) | 1999-07-01 | 2000-02-15 | 리노공업주식회사 | Separate socket device for probing chip |
JP2001116795A (en) * | 1999-10-18 | 2001-04-27 | Mitsubishi Electric Corp | Test socket and connection sheet for use in test socket |
JP2003084047A (en) | 2001-06-29 | 2003-03-19 | Sony Corp | Measuring jig for semiconductor device |
KR200313240Y1 (en) * | 2003-02-27 | 2003-05-17 | (주)티에스이 | Test socket for ball grid array package |
Also Published As
Publication number | Publication date |
---|---|
KR20110093085A (en) | 2011-08-18 |
WO2011099822A2 (en) | 2011-08-18 |
WO2011099822A3 (en) | 2011-12-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9696344B2 (en) | Test socket which allows for ease of alignment | |
US9488675B2 (en) | Test socket having high-density conductive unit, and method for manufacturing same | |
KR100769891B1 (en) | Contact probe and socket | |
KR100854267B1 (en) | Fabrication method of pogo pin and test socket using the same | |
KR101573450B1 (en) | Test socket | |
KR101667929B1 (en) | Silicon rubber socket | |
KR101833009B1 (en) | Test socket having magnetic arrangement of conductive particle using ferrite wire and method for manufacturing thereof | |
KR101366171B1 (en) | Test socket with high density conduction section | |
JP5119360B2 (en) | Socket for semiconductor chip inspection | |
KR200446269Y1 (en) | Test socket with gap member | |
KR101353481B1 (en) | Test socket with high density conduction section | |
TWI692642B (en) | Conductive contact and anisotropic conductive sheet with the same | |
KR101471116B1 (en) | Test socket with high density conduction section | |
KR20110071070A (en) | Electronic device socket | |
KR101138964B1 (en) | Test socket | |
KR101624689B1 (en) | Electrical connecting connector | |
KR20110104326A (en) | Sheet type connector, the fabrication method therefor and test socket | |
KR101004297B1 (en) | Spring structure and test socket using thereof | |
JP5064522B2 (en) | Socket for semiconductor chip inspection | |
KR101025027B1 (en) | Dual Spring Structure and Test Socket Comprising Thereof | |
JP2004333459A (en) | Contact probe, and semiconductor and electrical inspection device using the same | |
JP2017517863A (en) | Bidirectional conductive socket for high-frequency device test, bidirectional conductive module for high-frequency device test, and manufacturing method thereof | |
KR20080018520A (en) | Pogo pin and test socket using the same | |
KR100958134B1 (en) | test socket | |
KR102410156B1 (en) | Test apparatus for semiconductor package |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
N231 | Notification of change of applicant | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20160405 Year of fee payment: 5 |
|
FPAY | Annual fee payment |
Payment date: 20170413 Year of fee payment: 6 |
|
LAPS | Lapse due to unpaid annual fee |