KR101103813B1 - Method of manufacturing a flash memory device - Google Patents

Method of manufacturing a flash memory device Download PDF

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Publication number
KR101103813B1
KR101103813B1 KR1020050057774A KR20050057774A KR101103813B1 KR 101103813 B1 KR101103813 B1 KR 101103813B1 KR 1020050057774 A KR1020050057774 A KR 1020050057774A KR 20050057774 A KR20050057774 A KR 20050057774A KR 101103813 B1 KR101103813 B1 KR 101103813B1
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South Korea
Prior art keywords
source drain
drain region
source
memory cell
gate pattern
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KR1020050057774A
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Korean (ko)
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KR20070002302A (en
Inventor
심근수
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주식회사 하이닉스반도체
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Priority to KR1020050057774A priority Critical patent/KR101103813B1/en
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008Making conductor-insulator-semiconductor electrodes
    • H01L21/28017Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28123Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
    • H01L21/28141Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects insulating part of the electrode is defined by a sidewall spacer, e.g. dummy spacer, or a similar technique, e.g. oxidation under mask, plating
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/38Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232Field-effect technology
    • H01L21/8234MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823468MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate sidewall spacers, e.g. double spacers, particular spacer material or shape

Abstract

The present invention relates to a method of manufacturing a flash memory device, and according to the present invention, the phenomenon that the hot electron generated at the junction edge of the source select transistor moves to the boosting channel is reduced, thereby reducing the program disturb phenomenon of the flash memory device. Can be.
Source Drain Region, Source Select Transistor, Drain Select Transistor

Description

Method of manufacturing a flash memory device

1 is a cross-sectional view of a portion of a flash memory device manufactured by a conventional method.

FIG. 2 shows a flash memory device fabricated by a conventional method, in accordance with the concentration of the dose of the source drain region and the energy of the dose shared by the memory cell transistor adjacent to the source select transistor. It is a graph showing the change in threshold voltage.

3A to 3D are cross-sectional views of a part of a semiconductor substrate for describing a method of manufacturing a flash memory device according to an embodiment of the present invention.

Figure 4 illustrates the flash memory device fabricated by the fabrication method according to the present invention in accordance with the concentration of the dose of the source drain region and the energy of the dose shared by the memory cell transistor adjacent to the source select transistor. It is a graph showing the change of the threshold voltage.

<Explanation of symbols for the main parts of the drawings>

31a: TP-well 31b: TN-well

31c: P-type substrate 31: semiconductor substrate

32 tunnel oxide film 33 first polysilicon film

33 ': polysilicon film 34: ONO dielectric film

35 second polysilicon film 36 metal layer

37: hard mask film 38: first source drain region

39: second source drain region 40: third source drain region

41: oxide film 42, 43, 44: spacer

45, 46: high concentration of dose SST: source select transistor

DST: Drain Select Transistor MC: Memory Cell Transistor

The present invention relates to a method of manufacturing a semiconductor device, and more particularly, to a method of manufacturing a flash memory device.

In general, a flash memory device performs a read operation, a program operation, and an erase operation. The program operation or the erase operation is performed by FNerner-Nordheim tunneling occurring in the insulating film between the P-well and the floating gate of the memory cell. 1 is a cross-sectional view of a portion of a semiconductor substrate on which a flash memory device is formed by a conventional manufacturing method. Referring to FIG. 1, a plurality of source drain regions 14 are formed in the semiconductor substrate 10, and the source drain regions 14 include memory cell transistors MC1, MC2,... (SST; Source Select Transistor). In general, when a flash memory device is programmed, a program voltage VW1 of high voltage (eg, 16V to 19V) is applied to a selected word line (eg, WL0), and an unselected word line (eg, , WL1 is applied with a pass voltage VW2 (for example, 9V). In addition, 0 V is applied as the bias voltage VGS to the gate 11 of the source select transistor sst, and an internal voltage is applied as the bias voltage VCS to the common source line CSL. As a result, the program voltage VW1 applied to the control gate 12 is applied to a region adjacent to the floating gate 13 of the memory cell transistor MC1 (that is, a region between two source drain regions 14). By this, a (P-well (not shown)) channel 15 is formed. Therefore, the electrons (not shown) of the channel 15 are moved to the floating gate 13 by FN tunneling (Fowler-Nordheim tunneling), so that the memory cell transistor MC1 is programmed.

Meanwhile, for example, the program data input to the memory cell transistor MC1 through a bit line connected through the drain select transistor (not shown) and the memory cell transistors MC2,... (Ie, data for program prohibition), the memory cell transistor MC1 should not be programmed. However, in a flash memory device manufactured by a conventional manufacturing method, a high junction (due to a channel voltage) at a junction edge portion of the source drain region 14 shared by the source select transistor sst. Hot electrons 16 are generated by the potential energy. The hot electrons 16 generated as described above move to the boosting channel 15 and move to the floating gate 13 of the memory cell transistor MC1. In addition, a high electric field of the boosting channel 15 generates hot electrons 17 in some regions adjacent to the boosting channel 15, and the hot electrons 17 also cause the floating gate 13. Will be moved to. As a result, a hot carrier is injected into the floating gate 13 of the memory cell transistor MC1 that should not be programmed so that the memory cell transistor MC1 is programmed, that is, a program. There is a problem that occurs in the disturb (distrub) phenomenon. This phenomenon occurs more frequently in the memory cell transistor MC1 adjacent to the source select transistor sst than in the memory cell transistors MC2,... Which are not adjacent to the source select transistor sst. In addition, this problem becomes more serious as the flash memory device is highly integrated.

2 shows the concentration and dose of the dose of the source drain region 14 shared by the memory cell transistor MC1 adjacent to the source select transistor sst in a flash memory device manufactured by a conventional method. A graph showing a change in threshold voltage of the adjacent memory cell transistor MC1 according to energy. That is, in the graph of FIG. 2, when the adjacent memory cell transistor MC1 should not be programmed, the threshold voltage of the memory cell transistor MC1 is changed according to a program disturb phenomenon. Referring to FIG. 2, the graph D1 shows that the source drain region 14 has a standard dose condition (ie, As (energy of dose: 20 KeV, concentration of dose: 7.0 12 ), P (energy of dose: 30 Kev, concentration of dose). : 7.0 12 )), the threshold voltage of the memory cell transistor MC1 in which the program disturb occurs. Graph D2 shows that the source and drain regions 14 are subjected to dose conditions (i.e., As (energy of dose: 20KeV, concentration of dose: 7.0 12 ), P (energy of dose: 40Kev, concentration of dose: 1.0 13 )). When formed, this indicates a change in the threshold voltage of the memory cell transistor MC1 in which the program disturb phenomenon occurs. D3 indicates that the source drain region 14 is formed by a dose condition (i.e., As (energy of dose: 25KeV, concentration of dose: 1.0 13 ), P (energy of dose: 30Kev, concentration of dose: 7.0 12 )). In this case, the threshold voltage of the memory cell transistor MC1 in which the program disturb phenomenon occurs is shown. Here, as referred to in the graphs D1, D2, and D3, when the dose concentration of the source drain region 14 is increased, the threshold voltage of the memory cell transistor MC1 in which the program disturb occurs is low. It can be seen that. Therefore, the concentration of the dose of the source drain region 14 needs to be increased to reduce the occurrence of the program disturb phenomenon.

Accordingly, a technical problem of the present invention is to increase the dose concentration of the source drain region shared by the memory cell transistor adjacent to the source select transistor, thereby preventing the hot electrons generated at the junction edge toward the source select transistor from moving to the boosting channel. The present invention provides a method of manufacturing a flash memory device capable of reducing a program disturb phenomenon.

In accordance with another aspect of the present invention, a method of manufacturing a flash memory device includes a gate pattern of a source select transistor, a gate pattern of a drain select transistor, gate patterns of memory cell transistors, a first source drain region, and a second Providing a semiconductor substrate having a triple well structure having a source drain region and third source drain regions formed thereon; Depositing an oxide film for a spacer on the entire structure; The etching process is performed such that the first and second spacers are disposed on the sidewalls of the gate pattern of the source select transistor and the sidewalls of the gate pattern of the drain select transistor so that only a portion of the upper surface of each of the first and second source drain regions is exposed. Forming third spacers on both sidewalls of gate patterns of the plurality of memory cell transistors so that the upper surface of the third source drain region is not exposed; And performing an impurity implantation process on the exposed first and second source drain regions.

Hereinafter, with reference to the accompanying drawings will be described a preferred embodiment of the present invention. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various forms, and only the present embodiments are intended to complete the disclosure of the present invention and to those skilled in the art. It is provided for complete information.

3A to 3D are cross-sectional views of a part of a semiconductor substrate for describing a method of manufacturing a flash memory device according to an embodiment of the present invention. The same reference numerals among the reference numerals shown in FIGS. 3A to 3D indicate the same components having the same function.

Referring to FIG. 3A, the gate pattern SG of the source select transistor SST, the gate pattern DG of the drain select transistor DST, the gate patterns MG of the memory cell transistors MC, and the first source A semiconductor substrate 31 having a triple well structure is provided in which a drain region 38, a second source drain region 39, and third source drain regions 40 are formed. In more detail, the semiconductor substrate 31 is, for example, a TN-well (triple N-well) 31b and a TP-well (triple P-well) 31a in the P-type substrate 31c. This has a triple well structure formed sequentially. In addition, the first source drain region 38, the second source drain region 39, and the third source drain regions 40 are formed in the TP-well 31a. Gate patterns MG of the memory cell transistors MC are disposed between the gate pattern SG of the source select transistor SST and the gate pattern DG of the drain select transistor DST. The first source drain region 38 may include the gate pattern SG of the source select transistor SST and the source select transistor among the gate patterns MG of the memory cell transistors MC. Located between the gate pattern MG of the memory cell transistor MC adjacent to the gate pattern SG of the SST. The second source drain region 39 may include the gate pattern DG of the drain select transistor DST and the drain select transistor DST among the gate patterns MG of the memory cell transistors MC. The gate pattern MG is positioned between the gate pattern MG of the memory cell transistor MC adjacent to the gate pattern DG. The third source drain regions 40 are positioned between the gate patterns MG of the plurality of memory cell transistors MC, respectively. In this case, in order to reduce program disturb, the size S1 of the first source drain region 38 and the size S2 of the second source drain region 39 are respectively the third source drain regions 40. ) Although the size S3 is set to be larger than each size S3, the size S1 of the first source drain region 38 and the size S2 of the second source drain region 39 may be set to the third source drain region. It may be formed to be the same as the size of the field (40).

The gate pattern SG of the source select transistor SST and the gate pattern DG of the drain select transistor DST each include a tunnel oxide film 32 and an ONO dielectric film 34 in a partial region. The polysilicon film 33 ', the metal layer 36, and the hard mask film 37 are sequentially stacked. Preferably, W may be used as the metal layer 36. In addition, each of the gate patterns MG of the memory cell transistors MC may include the tunnel oxide layer 32, the first polysilicon layer 33 for the floating gate, the ONO dielectric layer 34, and the control gate. The polysilicon film 35, the metal layer 36, and the hard mask film 37 are sequentially stacked. The process of forming the patterns SG, DG, and MG and the first to third source drain regions 38, 39, and 40 on the semiconductor substrate 31 having a triple well structure may be performed. As those skilled in the art can fully understand, the detailed description thereof will be omitted.

Referring to FIG. 3B, an oxide layer 41 for spacers is deposited on the entire structure. At this time, bending due to the shape of the patterns SG, DG, and MG occurs on the upper surface of the oxide layer 41. In more detail, the distance between the gate pattern SG and the gate pattern MG adjacent to the gate pattern SG is greater than that between the gate patterns MG (that is, the Since the size S1 of the first source drain region 38 is larger than the size S3 of the third source drain region 40, the oxide film 41 deposited on the first source drain region 38. ) Is smaller than the thickness of the oxide film 41 deposited in the third source drain region 40. Similarly, the thickness of the oxide film 41 deposited in the second source drain region 39 is smaller than the thickness of the oxide film 41 deposited in the third source drain region 40.

Referring to FIG. 3C, an etching process is performed on the semiconductor substrate 31 on which the oxide layer 41 is deposited, and the sidewalls of the gate pattern SG of the source select transistor SST and the drain select transistor DST are performed. Spacers 42 and 43 are formed on sidewalls of the gate pattern DG. In addition, spacers 44 are formed on both sidewalls of each of the gate patterns MG of the plurality of memory cell transistors MC. Here, due to the difference in the surface shape of the oxide film 41 and the difference in deposition thickness described above with reference to FIG. 3B, as a result of the etching process, an upper portion of each of the first and second source drain regions 38 and 39 is formed. Only a portion of the surface is exposed, and the upper surface of the third source drain region 40 is not exposed. Here, the etching process for forming the spacers 42, 43, and 44 uses a front etching or etch back process using wet or dry etching.

As such, the reason why the upper surface of the third source drain region 40 is not exposed is to prevent impurities from being injected into the third source drain region 40 in an impurity implantation process described later. For example, when an additional impurity is injected into the third source drain region 40, a punch phenomenon occurs in the memory cell (ie, the memory cell transistor MC), so that the threshold voltage may be increased during the program operation. Can be reduced. As a result, the program time of the flash memory device is increased. Here, threshold voltages (threshold voltages when a program disturb phenomenon occurs) of the memory cell transistor MC according to the dose concentration and the energy of the dose of the third source drain region 40 may be represented by the following table.

Split
Threshold Voltage of Memory Cell Transistor MC with Program Disturbance

Concentration of dose

Doze's energy

1.0 13

50 KeV

-3.28 V

0.7 13

50 KeV

3.02V

1.0 13

30 KeV

-3.18 V

0.7 13

30 KeV

-2.77 V

0.7 13

20 KeV

-2.48V

0.5 13

30 KeV

-2.27V

As shown in Table 1, as the concentration of the dose of the third source drain region 40 and the energy of the dose increase, the threshold voltage of the memory cell transistor MC decreases. Accordingly, in order to increase the concentration of the dose of the first and second source drain regions 38 and 39 without affecting the third source drain region 40, the first and second source drain regions ( The spacers 42, 43, 44 should be formed so that only the top of the 38, 39 is exposed.

Referring to FIG. 3D, an impurity implantation process is performed on the exposed first and second source drain regions 38 and 39. As a result, regions 45 and 46 having a high concentration of dose are formed in the first and second source drain regions 38 and 39, respectively.

4 illustrates a memory in which a program disturb phenomenon occurs according to a dose concentration and energy of a dose of a source drain region shared by a memory cell transistor adjacent to a source select transistor in a flash memory device manufactured by the manufacturing method according to the present invention. It is a graph showing the change of the threshold voltage of the cell. Referring to FIG. 4, graph C1 shows standard dose conditions (i.e., As (energy of dose: 20 KeV, concentration of dose: 7.0 12 ), P (dose) of the first and second source drain regions 38 and 39). When an additional impurity implantation process is performed with energy: 30 Kev, concentration of dose: 7.0 12 )), the threshold voltage of the memory cell transistor MC in which the program disturb occurs is shown. Graph C2 shows dose conditions (i.e., As (energy of dose: 20KeV, concentration of dose: 7.0 12 ), P (energy of dose: 40Kev, concentration of dose) in the first and second source drain regions 38, 39. : 1.0 13 )) shows a change in the threshold voltage of the memory cell transistor MC in which a program disturb occurs. C3 is a dose condition (i.e., As (energy of dose: 25KeV, concentration of dose: 1.0 13 ), P (energy of dose: 30Kev, concentration of dose) in the first and second source drain regions 38, 39. : 7.0 12 )) shows a change in the threshold voltage of the memory cell transistor MC in which a program disturb occurs. The threshold voltage of the memory cell transistor MC in which the program disturb phenomenon occurs, which is represented by the graphs C1, C2, and C3, is represented by the graphs D1, D2, and D3 shown in FIG. 2. It can be seen that the phenomenon is lower than the threshold voltage of the memory cell transistor MC. Therefore, according to the method of manufacturing the flash memory device according to the present invention, the phenomenon that the hot electron generated at the junction edge of the source select transistor SST is moved to the boosted channel can be reduced, so that the program disturb phenomenon of the flash memory device can be reduced. This can be reduced.

Although the technical spirit of the present invention described above has been described in detail in the preferred embodiments, it should be noted that the above-described embodiments are for the purpose of description and not of limitation. In addition, the present invention will be understood by those skilled in the art that various embodiments are possible within the scope of the technical idea of the present invention.

As described above, according to the present invention, the following effects are obtained.

First, since the phenomenon that the hot electrons generated at the junction edge toward the source select transistor move to the boosting channel is reduced, the program disturb of the flash memory device can be reduced.

Secondly, an additional impurity implantation process may improve program disturb of a flash memory device, thereby improving program speed.

Claims (6)

  1. Forming a first gate pattern of a source select transistor, a second gate pattern of a drain select transistor, and third gate patterns of memory cell transistors on an active region of a semiconductor substrate defined by an isolation layer;
    Forming a first source drain region in the semiconductor substrate between the first gate pattern and the third gate pattern of the memory cell transistor adjacent to the first gate pattern, and the memory adjacent to the second gate pattern and the second gate pattern Forming a second source drain region in the semiconductor substrate between the third gate patterns of the cell transistor, and forming third source drain regions in the semiconductor substrate between the third gate patterns;
    Depositing an oxide film for a spacer on the resultant layer including the first to third gate patterns and the first to third source drain regions;
    The spacer oxide layer is etched to form first and second spacers on sidewalls of the first and second gate patterns of the source and drain select transistors, and to both sidewalls of the third gate patterns of the memory cell transistors. Respectively forming third spacers; And
    Performing an impurity implantation process in addition to the first and second source drain regions; Method of manufacturing a flash memory device comprising a.
  2. Claim 2 has been abandoned due to the setting registration fee.
    The method of claim 1,
    In the depositing the oxide film for the spacer, the thickness of the oxide film deposited in the first source drain region is smaller than the thickness of the oxide film deposited in the third source drain region, and is deposited in the second source drain region. And a thickness of the oxide film is smaller than a thickness of the oxide film deposited in the third source drain region.
  3. Claim 3 was abandoned when the setup registration fee was paid.
    The method of claim 1, wherein when forming each of the spacers,
    And the first and second source drain regions are exposed by the first spacer and the second spacer, and the third source drain region is not exposed by the third spacer.
  4. Claim 4 was abandoned when the registration fee was paid.
    The method of claim 1,
    The impurity additionally injected into the first and second source drain regions may be simultaneously injected with As or Phosphrous, As and Phosphrous.
  5. Claim 5 was abandoned upon payment of a set-up fee.
    5. The method of claim 4,
    The energy of the impurity additionally injected into the first and second source drain regions is 20Kev-25Kev for As, and 30-40Kev for Phosphrous.
  6. Claim 6 was abandoned when the registration fee was paid.
    5. The method of claim 4,
    The impurity concentration to be further injected into the first and second source drain region is 1.0 13 -7.0 12 The manufacturing method of the flash memory device.
KR1020050057774A 2005-06-30 2005-06-30 Method of manufacturing a flash memory device KR101103813B1 (en)

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KR100870279B1 (en) 2007-06-28 2008-11-25 주식회사 하이닉스반도체 Method of manufacturing a flash memory device
KR101503875B1 (en) 2008-03-17 2015-03-25 삼성전자주식회사 Semiconductor Device Capable Of Suppressing Short Channel Effect And Method Of Fabricating The Same
KR101539399B1 (en) 2008-09-24 2015-07-24 삼성전자주식회사 Semiconductor device and method of manufacturing the same

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Publication number Priority date Publication date Assignee Title
KR20060082945A (en) * 2005-01-13 2006-07-20 주식회사 하이닉스반도체 Method of manufacturing a flash memory device
KR20080015554A (en) * 2006-08-16 2008-02-20 삼성전자주식회사 Method of manufacturing a non-volatile memory device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060082945A (en) * 2005-01-13 2006-07-20 주식회사 하이닉스반도체 Method of manufacturing a flash memory device
KR20080015554A (en) * 2006-08-16 2008-02-20 삼성전자주식회사 Method of manufacturing a non-volatile memory device

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