KR101084808B1 - 금속 막 연마용 패드 및 그것을 이용하는 금속 막의 연마 방법 - Google Patents
금속 막 연마용 패드 및 그것을 이용하는 금속 막의 연마 방법 Download PDFInfo
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- KR101084808B1 KR101084808B1 KR1020097021874A KR20097021874A KR101084808B1 KR 101084808 B1 KR101084808 B1 KR 101084808B1 KR 1020097021874 A KR1020097021874 A KR 1020097021874A KR 20097021874 A KR20097021874 A KR 20097021874A KR 101084808 B1 KR101084808 B1 KR 101084808B1
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- metal film
- polishing
- pad
- polishing pad
- mpa
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- 239000002184 metal Substances 0.000 title abstract 6
- 238000005498 polishing Methods 0.000 title abstract 6
- 238000007517 polishing process Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
- C08G18/30—Low-molecular-weight compounds
- C08G18/32—Polyhydroxy compounds; Polyamines; Hydroxyamines
- C08G18/3203—Polyhydroxy compounds
- C08G18/3212—Polyhydroxy compounds containing cycloaliphatic groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
- C08G18/40—High-molecular-weight compounds
- C08G18/42—Polycondensates having carboxylic or carbonic ester groups in the main chain
- C08G18/4236—Polycondensates having carboxylic or carbonic ester groups in the main chain containing only aliphatic groups
- C08G18/4238—Polycondensates having carboxylic or carbonic ester groups in the main chain containing only aliphatic groups derived from dicarboxylic acids and dialcohols
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
- C08G18/40—High-molecular-weight compounds
- C08G18/48—Polyethers
- C08G18/4833—Polyethers containing oxyethylene units
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
- C08G18/40—High-molecular-weight compounds
- C08G18/48—Polyethers
- C08G18/4854—Polyethers containing oxyalkylene groups having four carbon atoms in the alkylene group
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
- C08G18/65—Low-molecular-weight compounds having active hydrogen with high-molecular-weight compounds having active hydrogen
- C08G18/66—Compounds of groups C08G18/42, C08G18/48, or C08G18/52
- C08G18/6633—Compounds of group C08G18/42
- C08G18/6637—Compounds of group C08G18/42 with compounds of group C08G18/32 or polyamines of C08G18/38
- C08G18/664—Compounds of group C08G18/42 with compounds of group C08G18/32 or polyamines of C08G18/38 with compounds of group C08G18/3203
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
- C08G18/65—Low-molecular-weight compounds having active hydrogen with high-molecular-weight compounds having active hydrogen
- C08G18/66—Compounds of groups C08G18/42, C08G18/48, or C08G18/52
- C08G18/6666—Compounds of group C08G18/48 or C08G18/52
- C08G18/667—Compounds of group C08G18/48 or C08G18/52 with compounds of group C08G18/32 or polyamines of C08G18/38
- C08G18/6674—Compounds of group C08G18/48 or C08G18/52 with compounds of group C08G18/32 or polyamines of C08G18/38 with compounds of group C08G18/3203
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- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Polyurethanes Or Polyureas (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
Abstract
Description
열가소성 폴리우레탄 |
고분자 디올 중의 폴리테트라메틸렌 글리콜의 비율(질량%) |
CHDM/BD (몰 비) |
질소 원자의 함유율 (질량%) |
저장 탄성율 (MPa) |
||
80℃ | 100℃ | |||||
참고예 1 | PU-1 | 100 | 25/75 | 5.7 | 802 | 14 |
참고예 2 | PU-2 | 100 | 20/80 | 5.7 | 266 | 35 |
참고예 3 | PU-3 | 100 | 20/80 | 5.6 | 682 | 22 |
참고예 4 | PU-4 | 0 | 10/90 | 5.4 | 188 | 43 |
참고예 5 | PU-5 | 100 | 100/0 | 5.9 | 1080 | 153 |
참고예 6 | PU-6 | 0 | 30/70 | 5.4 | 94 | 16 |
참고예 7 | PU-7 | 100 | 100/0 | 5.7 | 910 | 40 |
참고예 8 | PU-8 | 100 | 0/100 | 6.2 | 543 | 74 |
|
사용된 열 가소성 폴 리우레탄 |
패턴이 형성되지 않은 구리 막을 표면에 갖는 웨이퍼 | 패턴이 형성된 구리 막을 표면에 갖는 웨이퍼 | ||||
패턴 볼록부 |
패턴 오목부 |
연마 속도 비 (볼록부/ 오목부) |
|||||
연마 속도 (nm/min) |
불균일성 (%) |
스크래치 | 연마 속도 (nm/min) |
연마 속도 (nm/min) |
|||
실시예 1 | PU-1 | 795 | 7.1 | 없음 | 840 | 197 | 4.26 |
실시예 2 | PU-2 | 730 | 8.1 | 없음 | 773 | 230 | 3.36 |
실시예 3 | PU-3 | 773 | 7.6 | 없음 | 832 | 202 | 4.12 |
비교예 1 | PU-4 | 708 | 8.3 | 적음 | 749 | 253 | 2.96 |
비교예 2 | PU-5 | 801 | 7.2 | 다수 | 842 | 185 | 4.55 |
비교예 3 | PU-6 | 678 | 9.3 | 없음 | 721 | 298 | 2.42 |
비교예 4 | PU-7 | 788 | 7.0 | 약간 많음 | 851 | 173 | 4.92 |
비교예 5 | PU-8 | 720 | 7.8 | 약간 많음 | 797 | 210 | 3.80 |
Claims (13)
- 금속 막 연마용 패드로서,고분자 디올, 유기 디이소시아네이트 및 쇄신장제를 반응시킴으로써 얻어지는 열가소성 폴리우레탄으로 이루어지고,80℃에서의 저장 탄성률이 200 ㎫∼900 ㎫이며,또한 110℃에서의 저장 탄성률이 40 ㎫ 이하이고,여기에서, 상기 쇄신장제는 이소시아네이트기와 반응할 수 있는 활성 수소 원자를 분자 중에 2개 갖는 분자량 300 이하의 저분자 화합물인 것인금속 막 연마용 패드.
- 제1항에 있어서, 무발포 구조의 수지로 이루어지는 금속 막 연마용 패드.
- 삭제
- 제1항 또는 제2항에 있어서, 상기 고분자 디올은 폴리테트라메틸렌글리콜을 30 질량%∼100 질량% 포함하는 것인 금속 막 연마용 패드.
- 제4항에 있어서, 상기 폴리테트라메틸렌글리콜의 수 평균 분자량이 1200∼4000인 금속 막 연마용 패드.
- 제1항 또는 제2항에 있어서, 상기 쇄신장제는 1,4-부탄디올(BD)로 이루어지거나, 또는 1,4-시클로헥산디메탄올(CHDM) 및 1,4-부탄디올(BD)로 이루어지고, CHDM과 BD의 몰 비([CHDM의 몰 수]/[BD의 몰 수])는 0/100∼50/50인 것인 금속 막 연마용 패드.
- 제1항 또는 제2항에 있어서, 상기 금속 막이 배선용 금속 막, 배리어 금속 막, 또는 배선용 및 배리어 금속 막인 금속 막 연마용 패드.
- 제7항에 있어서, 상기 배선용 금속 막이 구리 막인 금속 막 연마용 패드.
- 제1항 또는 제2항에 있어서, 상기 금속 막이, 패턴이 형성된 금속 막인 금속 막 연마용 패드.
- 제1항 또는 제2항에 기재된 패드를 이용하는 금속 막의 연마 방법.
- 제10항에 있어서, 상기 금속 막이 배선용 금속 막, 배리어 금속 막, 또는 배선용 및 배리어 금속 막인 연마 방법.
- 제11항에 있어서, 상기 배선용 금속 막이 구리 막인 연마 방법.
- 제10항에 있어서, 상기 금속 막이, 패턴이 형성된 금속 막인 연마 방법.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2007-071976 | 2007-03-20 | ||
JP2007071976 | 2007-03-20 | ||
PCT/JP2008/055029 WO2008120578A1 (ja) | 2007-03-20 | 2008-03-19 | 金属膜研磨用パッドおよびそれを用いる金属膜の研磨方法 |
Publications (2)
Publication Number | Publication Date |
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KR20090132607A KR20090132607A (ko) | 2009-12-30 |
KR101084808B1 true KR101084808B1 (ko) | 2011-11-21 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020097021874A KR101084808B1 (ko) | 2007-03-20 | 2008-03-19 | 금속 막 연마용 패드 및 그것을 이용하는 금속 막의 연마 방법 |
Country Status (8)
Country | Link |
---|---|
US (1) | US8308527B2 (ko) |
EP (1) | EP2128894B1 (ko) |
JP (1) | JP5389448B2 (ko) |
KR (1) | KR101084808B1 (ko) |
CN (1) | CN101681825B (ko) |
IL (1) | IL201028A (ko) |
TW (1) | TWI386992B (ko) |
WO (1) | WO2008120578A1 (ko) |
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JP5193595B2 (ja) * | 2005-09-22 | 2013-05-08 | 株式会社クラレ | 高分子材料、それから得られる発泡体及びこれらを用いた研磨パッド |
JP5276502B2 (ja) * | 2009-04-03 | 2013-08-28 | 東洋ゴム工業株式会社 | 研磨パッド及びその製造方法 |
JP5789523B2 (ja) * | 2012-01-10 | 2015-10-07 | 株式会社クラレ | 研磨パッド、及び研磨パッドを用いた化学的機械的研磨方法 |
US20140225123A1 (en) * | 2012-12-17 | 2014-08-14 | Erdem Arkun | REO/ALO/AlN TEMPLATE FOR III-N MATERIAL GROWTH ON SILICON |
KR102398128B1 (ko) * | 2014-11-28 | 2022-05-13 | 주식회사 쿠라레 | 연마층용 성형체 및 연마 패드 |
EP3038152A1 (en) * | 2014-12-26 | 2016-06-29 | Kabushiki Kaisha Toshiba | Wiring board and semiconductor package including wiring board |
CN108025420B (zh) * | 2015-09-25 | 2020-10-27 | 嘉柏微电子材料股份公司 | 具有高模量比的聚氨酯化学机械抛光垫 |
JP6619100B2 (ja) * | 2016-07-29 | 2019-12-11 | 株式会社クラレ | 研磨パッドおよびそれを用いた研磨方法 |
JP7259311B2 (ja) * | 2017-12-26 | 2023-04-18 | Dic株式会社 | 研磨パッド及び研磨パッド用ウレタン樹脂組成物 |
JP6993513B2 (ja) * | 2018-08-11 | 2022-01-13 | 株式会社クラレ | 研磨層用ポリウレタン、研磨層及び研磨パッド |
CN109535380B (zh) * | 2018-12-19 | 2021-01-26 | 广州机械科学研究院有限公司 | 一种热交联型热塑型聚氨酯弹性体及其制备方法和应用 |
US20230173637A1 (en) * | 2020-03-26 | 2023-06-08 | Fujibo Holdings, Inc. | Polishing pad, polishing unit, polishing device, and method for manufacturing polishing pad |
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JPH11322878A (ja) | 1998-05-13 | 1999-11-26 | Dainippon Ink & Chem Inc | 泡含有ポリウレタン成形物の製造方法、泡含有成形物用ウレタン樹脂組成物及びそれを用いた研磨パッド |
JP3516874B2 (ja) | 1998-12-15 | 2004-04-05 | 東洋ゴム工業株式会社 | ポリウレタン発泡体の製造方法及び研磨シート |
JP2000248034A (ja) | 1999-03-02 | 2000-09-12 | Mitsubishi Chemicals Corp | 研磨材用ポリウレタン系樹脂組成物及びその発泡体 |
JP3558273B2 (ja) | 1999-09-22 | 2004-08-25 | 東洋ゴム工業株式会社 | ポリウレタン発泡体の製造方法及び研磨シート |
JP4115124B2 (ja) | 2000-12-08 | 2008-07-09 | 株式会社クラレ | 熱可塑性ポリウレタン発泡体およびその製造方法並びに該発泡体からなる研磨パッド |
KR100877542B1 (ko) * | 2001-11-13 | 2009-01-07 | 도요 고무 고교 가부시키가이샤 | 연마 패드 및 그 제조 방법 |
JP2004343016A (ja) * | 2003-05-19 | 2004-12-02 | Jsr Corp | 研磨パッド及び研磨方法 |
JP4475404B2 (ja) * | 2004-10-14 | 2010-06-09 | Jsr株式会社 | 研磨パッド |
JP4775881B2 (ja) * | 2004-12-10 | 2011-09-21 | 東洋ゴム工業株式会社 | 研磨パッド |
WO2006062158A1 (ja) * | 2004-12-10 | 2006-06-15 | Toyo Tire & Rubber Co., Ltd. | 研磨パッド及び研磨パッドの製造方法 |
JP2007071976A (ja) | 2005-09-05 | 2007-03-22 | Fujifilm Corp | 拡散シート |
TW200720493A (en) * | 2005-10-31 | 2007-06-01 | Applied Materials Inc | Electrochemical method for ecmp polishing pad conditioning |
JP2007214518A (ja) * | 2006-02-13 | 2007-08-23 | Fujifilm Corp | 金属用研磨液 |
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- 2008-03-19 JP JP2008542957A patent/JP5389448B2/ja active Active
- 2008-03-19 WO PCT/JP2008/055029 patent/WO2008120578A1/ja active Application Filing
- 2008-03-19 TW TW097109611A patent/TWI386992B/zh active
- 2008-03-19 CN CN2008800167873A patent/CN101681825B/zh active Active
- 2008-03-19 KR KR1020097021874A patent/KR101084808B1/ko active IP Right Grant
- 2008-03-19 EP EP08722419.2A patent/EP2128894B1/en active Active
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Also Published As
Publication number | Publication date |
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IL201028A0 (en) | 2010-05-17 |
TW200908119A (en) | 2009-02-16 |
TWI386992B (zh) | 2013-02-21 |
KR20090132607A (ko) | 2009-12-30 |
JPWO2008120578A1 (ja) | 2010-07-15 |
CN101681825A (zh) | 2010-03-24 |
CN101681825B (zh) | 2011-11-09 |
JP5389448B2 (ja) | 2014-01-15 |
EP2128894A4 (en) | 2012-01-11 |
IL201028A (en) | 2013-05-30 |
US8308527B2 (en) | 2012-11-13 |
EP2128894B1 (en) | 2018-04-25 |
US20100035521A1 (en) | 2010-02-11 |
WO2008120578A1 (ja) | 2008-10-09 |
EP2128894A1 (en) | 2009-12-02 |
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