KR101049842B1 - 기판 세정 방법, 기판 세정 장치 및 프로그램 기록 매체 - Google Patents

기판 세정 방법, 기판 세정 장치 및 프로그램 기록 매체 Download PDF

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Publication number
KR101049842B1
KR101049842B1 KR1020070039728A KR20070039728A KR101049842B1 KR 101049842 B1 KR101049842 B1 KR 101049842B1 KR 1020070039728 A KR1020070039728 A KR 1020070039728A KR 20070039728 A KR20070039728 A KR 20070039728A KR 101049842 B1 KR101049842 B1 KR 101049842B1
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South Korea
Prior art keywords
cleaning
cleaning liquid
tank
discharge member
cleaning tank
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KR1020070039728A
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Korean (ko)
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KR20070111973A (ko
Inventor
츠카사 와타나베
나오키 신도
고우키치 히로시로
유지 가미카와
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0416—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

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  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Liquid Crystal (AREA)
KR1020070039728A 2006-05-19 2007-04-24 기판 세정 방법, 기판 세정 장치 및 프로그램 기록 매체 Active KR101049842B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006140377A JP4705517B2 (ja) 2006-05-19 2006-05-19 基板洗浄方法、基板洗浄装置、プログラム、および記録媒体
JPJP-P-2006-00140377 2006-05-19

Publications (2)

Publication Number Publication Date
KR20070111973A KR20070111973A (ko) 2007-11-22
KR101049842B1 true KR101049842B1 (ko) 2011-07-15

Family

ID=38472834

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KR1020070039728A Active KR101049842B1 (ko) 2006-05-19 2007-04-24 기판 세정 방법, 기판 세정 장치 및 프로그램 기록 매체

Country Status (7)

Country Link
US (1) US8152928B2 (https=)
EP (1) EP1858059B1 (https=)
JP (1) JP4705517B2 (https=)
KR (1) KR101049842B1 (https=)
AT (1) ATE416477T1 (https=)
DE (1) DE602007000315D1 (https=)
TW (1) TW200818282A (https=)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009231579A (ja) * 2008-03-24 2009-10-08 Dainippon Screen Mfg Co Ltd 基板処理装置及び基板処理方法
JP5666086B2 (ja) 2008-12-25 2015-02-12 ジルトロニック アクチエンゲゼルシャフトＳｉｌｔｒｏｎｉｃ ＡＧ シリコンウェハ洗浄装置
US8404056B1 (en) 2009-05-27 2013-03-26 WD Media, LLC Process control for a sonication cleaning tank
US8863763B1 (en) 2009-05-27 2014-10-21 WD Media, LLC Sonication cleaning with a particle counter
CN102029273B (zh) * 2009-10-05 2015-09-16 东京毅力科创株式会社 超声波清洗装置、超声波清洗方法
TWI490931B (zh) * 2009-10-05 2015-07-01 Tokyo Electron Ltd 超音波清洗裝置、超音波清洗方法、及記錄有用來執行此超音波清洗方法之電腦程式的記錄媒體
TW201330084A (zh) * 2012-01-13 2013-07-16 Smartron Co Ltd 晶片清洗裝置及其工序方法
JP5894858B2 (ja) * 2012-05-24 2016-03-30 ジルトロニック アクチエンゲゼルシャフトＳｉｌｔｒｏｎｉｃ ＡＧ 超音波洗浄方法
JP5872382B2 (ja) * 2012-05-24 2016-03-01 ジルトロニック アクチエンゲゼルシャフトＳｉｌｔｒｏｎｉｃ ＡＧ 超音波洗浄方法
US9174249B2 (en) * 2012-12-12 2015-11-03 Lam Research Corporation Ultrasonic cleaning method and apparatus therefore
US9070631B2 (en) * 2013-03-14 2015-06-30 Mei Llc Metal liftoff tools and methods
JP6329342B2 (ja) * 2013-06-07 2018-05-23 株式会社ダルトン 洗浄方法及び洗浄装置
US9562291B2 (en) 2014-01-14 2017-02-07 Mei, Llc Metal etch system
JP6090184B2 (ja) * 2014-01-27 2017-03-08 信越半導体株式会社 半導体ウェーハの洗浄槽及び貼り合わせウェーハの製造方法
US10522369B2 (en) * 2015-02-26 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for cleaning wafer and scrubber
US11103898B2 (en) * 2016-09-19 2021-08-31 Acm Research, Inc. Methods and apparatus for cleaning substrates
KR102658739B1 (ko) * 2017-05-03 2024-04-17 램 리써치 코포레이션 컨디셔닝 챔버 컴포넌트
JP6977845B1 (ja) * 2020-09-30 2021-12-08 栗田工業株式会社 電子部品・部材の洗浄水供給装置及び電子部品・部材の洗浄水の供給方法
JP7111386B2 (ja) * 2020-12-25 2022-08-02 アスカコーポレーション株式会社 無電解めっき装置
JP7583651B2 (ja) * 2021-03-11 2024-11-14 キオクシア株式会社 基板洗浄装置および基板洗浄方法
KR102736551B1 (ko) * 2021-09-22 2024-11-29 가부시키가이샤 스크린 홀딩스 기판 처리 방법 및 기판 처리 장치

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001274133A (ja) * 2000-03-27 2001-10-05 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
KR200261175Y1 (ko) * 1998-12-30 2002-05-13 김광교 반도체웨이퍼세정용약액공급장치
JP2006102684A (ja) * 2004-10-07 2006-04-20 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
JP2006108512A (ja) * 2004-10-07 2006-04-20 Ses Co Ltd 基板処理装置

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5427622A (en) * 1993-02-12 1995-06-27 International Business Machines Corporation Method for uniform cleaning of wafers using megasonic energy
JPH0831783A (ja) * 1994-07-14 1996-02-02 Fujitsu Ltd 基板のダイシング方法とその装置
KR0170214B1 (ko) * 1995-12-29 1999-03-30 김광호 교반기가 장착된 웨이퍼 세정 장치
KR100202191B1 (ko) * 1996-07-18 1999-06-15 문정환 반도체 웨이퍼 습식 처리장치
JPH10109072A (ja) 1996-10-04 1998-04-28 Puretetsuku:Kk 高周波洗浄装置
US6391067B2 (en) * 1997-02-04 2002-05-21 Canon Kabushiki Kaisha Wafer processing apparatus and method, wafer convey robot, semiconductor substrate fabrication method, and semiconductor fabrication apparatus
JPH10223585A (ja) 1997-02-04 1998-08-21 Canon Inc ウェハ処理装置及びその方法並びにｓｏｉウェハの製造方法
US5800626A (en) * 1997-02-18 1998-09-01 International Business Machines Corporation Control of gas content in process liquids for improved megasonic cleaning of semiconductor wafers and microelectronics substrates
US5849091A (en) * 1997-06-02 1998-12-15 Micron Technology, Inc. Megasonic cleaning methods and apparatus
JP3839553B2 (ja) * 1997-06-05 2006-11-01 大日本スクリーン製造株式会社 基板処理槽および基板処理装置
US6039055A (en) * 1998-01-08 2000-03-21 International Business Machines Corporation Wafer cleaning with dissolved gas concentration control
US6235641B1 (en) * 1998-10-30 2001-05-22 Fsi International Inc. Method and system to control the concentration of dissolved gas in a liquid
JP2001284306A (ja) * 2000-03-28 2001-10-12 Toshiba Corp 基板洗浄装置および基板洗浄方法
JP2002093765A (ja) * 2000-09-20 2002-03-29 Kaijo Corp 基板洗浄方法および基板洗浄装置
US6532974B2 (en) * 2001-04-06 2003-03-18 Akrion Llc Process tank with pressurized mist generation
US20020166569A1 (en) * 2001-05-10 2002-11-14 Speedfam-Ipec Corporation Method and apparatus for semiconductor wafer cleaning
JP4319445B2 (ja) * 2002-06-20 2009-08-26 大日本スクリーン製造株式会社 基板処理装置
US7111632B2 (en) * 2003-09-22 2006-09-26 Seagate Technology Llc Ultrasonic cleaning device for removing undesirable particles from an object
WO2005100637A1 (ja) * 2004-04-15 2005-10-27 Tokyo Electron Limited 液処理装置および液処理方法
JP2006066793A (ja) * 2004-08-30 2006-03-09 Naoetsu Electronics Co Ltd ウエハ洗浄方法及びその装置
TWI262827B (en) * 2005-12-13 2006-10-01 Ind Tech Res Inst Cleaning device and method of bubble reaction

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR200261175Y1 (ko) * 1998-12-30 2002-05-13 김광교 반도체웨이퍼세정용약액공급장치
JP2001274133A (ja) * 2000-03-27 2001-10-05 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
JP2006102684A (ja) * 2004-10-07 2006-04-20 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
JP2006108512A (ja) * 2004-10-07 2006-04-20 Ses Co Ltd 基板処理装置

Also Published As

Publication number Publication date
US8152928B2 (en) 2012-04-10
EP1858059B1 (en) 2008-12-03
JP2007311631A (ja) 2007-11-29
EP1858059A1 (en) 2007-11-21
TW200818282A (en) 2008-04-16
KR20070111973A (ko) 2007-11-22
ATE416477T1 (de) 2008-12-15
DE602007000315D1 (de) 2009-01-15
JP4705517B2 (ja) 2011-06-22
TWI342040B (https=) 2011-05-11
US20070267040A1 (en) 2007-11-22

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