KR101047708B1 - Light emitting device and manufacturing method - Google Patents
Light emitting device and manufacturing method Download PDFInfo
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- KR101047708B1 KR101047708B1 KR1020090102807A KR20090102807A KR101047708B1 KR 101047708 B1 KR101047708 B1 KR 101047708B1 KR 1020090102807 A KR1020090102807 A KR 1020090102807A KR 20090102807 A KR20090102807 A KR 20090102807A KR 101047708 B1 KR101047708 B1 KR 101047708B1
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Abstract
In one embodiment, a light emitting device includes: a substrate including a first lead pattern and a second lead pattern on an upper surface thereof; And a compound semiconductor layer including a first conductivity type semiconductor layer, an active layer under the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer under the active layer, and formed under the first conductivity type semiconductor layer. A first pad bonded to the one lead pattern, a second pad formed under the second conductive semiconductor layer and bonded to the second lead pattern, a current spreading layer on the compound semiconductor layer, and the first conductive And a chip structure including at least one conductive via electrically connecting the current spreading layer and the first pad to penetrate a semiconductor semiconductor layer.
Light emitting element
Description
The embodiment relates to a light emitting device and a method of manufacturing the same.
Light emitting diodes (LEDs) are semiconductor light emitting devices that convert current into light.
The wavelength of light emitted by the light emitting diode depends on the semiconductor material used to manufacture the light emitting diode. This is because the wavelength of the emitted light is determined in accordance with the band-gap of the semiconductor material, which represents the energy difference between valence band electrons and conduction band electrons.
Recently, the light emitting diode is gradually increasing in brightness, and is being used as a light source for a display, an automotive light source, and an illumination light source. A light emitting diode that emits white light having high efficiency by using a fluorescent material or by combining various color light emitting diodes. It is also possible to implement.
On the other hand, the brightness of the light emitting diode depends on various conditions such as the structure of the active layer, the light extraction structure that can effectively extract light to the outside, the size of the chip, the type of the molding member surrounding the light emitting diode.
The embodiment provides a light emitting device that operates stably by forming a current spreading layer to allow current to spread evenly over the compound semiconductor.
The embodiment provides a light emitting device having improved heat dissipation characteristics.
In one embodiment, a light emitting device includes: a substrate including a first lead pattern and a second lead pattern on an upper surface thereof; And a compound semiconductor layer including a first conductivity type semiconductor layer, an active layer under the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer under the active layer, and formed under the first conductivity type semiconductor layer. A first pad bonded to the one lead pattern, a second pad formed under the second conductive semiconductor layer and bonded to the second lead pattern, a current spreading layer on the compound semiconductor layer, and the first conductive And a chip structure including at least one conductive via electrically connecting the current spreading layer and the first pad to penetrate a semiconductor semiconductor layer.
In the method of manufacturing a light emitting device according to the embodiment, a compound semiconductor layer is formed by sequentially growing a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer on a growth substrate, and forming a first semiconductor layer on the first conductive semiconductor layer. Forming a chip structure by forming a second pad on the pad and the second conductive semiconductor layer; Forming a substrate having a first lead pattern and a second lead pattern corresponding to the first pad and the second pad; Coupling the chip structure and the substrate such that the first pad and the second pad correspond to the first lead pattern and the second lead pattern; Removing the growth substrate; And forming a current spreading layer on the compound semiconductor layer.
The embodiment can provide a light emitting device that can stably operate by forming a current spreading layer to spread current evenly over the compound semiconductor.
The embodiment can provide a light emitting device having improved heat dissipation characteristics.
In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure is formed "on" or "under" a substrate, each layer The terms " on "and " under " encompass both being formed" directly "or" indirectly " In addition, the criteria for the top or bottom of each layer will be described with reference to the drawings.
In the drawings, the thickness or size of each layer is exaggerated, omitted, or schematically illustrated for convenience and clarity of description. In addition, the size of each component does not necessarily reflect the actual size.
Hereinafter, a light emitting device and a method of manufacturing the same according to embodiments will be described with reference to the accompanying drawings.
1 is a cross-sectional view of a
Referring to FIG. 1, the
The
The
First
First and
Upper surfaces of the
The
The
A
The
The
The first
An
The
A second
Here, the first
A
A
The
An ohmic contact layer may be formed in a pattern or a layer shape between the
A second insulating
The second
The
The current spreading
The current spreading
The current spreading
The current spreading
The current spreading
On the other hand, the current spreading
2 and 3 are views illustrating a case where the current spreading
Referring to FIG. 2, when the current spreading
2 (a) is the various patterns of the current spreading
As such, the various patterns of the current spreading
Referring to FIG. 3, when the current spreading
Since the current spreading
Meanwhile, although the current spreading
In addition, an uneven pattern may be formed on the upper surface of the current spreading
The current spreading
The conductive via 150 is formed to penetrate the first
One end of the conductive via 150 contacts the
Although one conductive via 150 is illustrated as being formed, a plurality of
The plating process may include electroless plating and electric plating. First, an electroless plating is formed on an inner wall of the second via hole to form a seed layer, and then the seed layer is used. Electroplating can be performed.
Alternatively, after the seed layer is deposited before the plating process, plating may be performed using the seed layer, but is not limited thereto.
The conductive material used in the plating process may include, for example, at least one metal such as copper (Cu), nickel (Ni), aluminum (Al), silver (Ag), tin (Sn), and the like. It is not limited.
The
4 to 9 are views illustrating a method of manufacturing the
Referring to FIG. 4, a compound semiconductor layer of Groups 2 to 6 is formed on the growth substrate 130 (S101 of FIG. 10).
The
The compound semiconductor layer of Groups 2 to 6 is electron beam deposition (E-beam deposition), physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma laser deposition (PLD), dual-type thermal deposition (dual-type thermal) It may be formed by a method such as evaporation sputtering, metal organic chemical vapor deposition (MOCVD), but is not limited thereto.
The group 2 to 6 compound semiconductor layer includes a first
The first
When the first
An
A conductive cladding layer may be formed on or under the
The second
Here, the first
After the growth of the Group 2 to Group 6 compound semiconductor layer on the
The
After the mesa etching, a second via hole is formed in the
The second via hole may be formed using laser drilling, etching, or the like, but is not limited thereto. The second via hole is formed in the
Referring to FIG. 5, the conductive via 150 is formed by filling a conductive material in the second via hole, for example, by a plating process.
The plating process may include electroless plating and electric plating. First, an electroless plating is formed on an inner wall of the second via hole to form a seed layer, and then the seed layer is used. Electroplating can be performed.
Alternatively, after the seed layer is deposited before the plating process, plating may be performed using the seed layer, but is not limited thereto.
The conductive material used in the plating process may include, for example, at least one metal such as copper (Cu), nickel (Ni), aluminum (Al), silver (Ag), tin (Sn), titanium (Ti), or the like. But it is not limited thereto.
Meanwhile, although one conductive via 150 is illustrated as being formed, a plurality of
After the
5 and 6, the insulating layer forming process is performed to form a second insulating
After the second insulating
The
Meanwhile, since the
In this way, the
Referring to FIGS. 7 and 8, the
The
The
In detail, the first insulating
The first insulating
The first and second
The via
First and second
The first via
A dicing
The dicing
After the
Referring to FIGS. 7 and 8, the
When the
After the
After removing the
In this case, the exposed compound semiconductor layer may be any one of the first
The etching may be performed by a wet etching method using an etching solution such as KOH, but is not limited thereto. The etching may remove the buffer layer and / or the non-conductive semiconductor layer (not shown), and may partially remove the first
In addition, a light extraction pattern may be formed on the surface of the compound semiconductor layer by the etching.
After the etching, the current spreading
Referring to FIG. 9, the current spreading
The current spreading
The current spreading
The current spreading
The current spreading
The current spreading
In addition, an uneven pattern may be formed on the upper surface of the current spreading
The current spreading
9 and 1, a dicing process for chip separation is performed (135 of FIG. 10), whereby the
As such, the method of manufacturing the
In addition, since the current spreading
Features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.
In addition, the above description has been made with reference to the embodiment, which is merely an example, and is not intended to limit the present invention. Those skilled in the art to which the present invention pertains will be illustrated as above without departing from the essential characteristics of the present embodiment. It will be appreciated that various modifications and applications are possible. For example, each component specifically shown in the embodiment can be modified. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.
1 to 10 are views illustrating a light emitting device and a method of manufacturing the same according to an embodiment.
Claims (18)
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KR1020090102807A KR101047708B1 (en) | 2009-10-28 | 2009-10-28 | Light emitting device and manufacturing method |
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KR1020090102807A KR101047708B1 (en) | 2009-10-28 | 2009-10-28 | Light emitting device and manufacturing method |
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KR101047708B1 true KR101047708B1 (en) | 2011-07-08 |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10294491A (en) | 1997-04-22 | 1998-11-04 | Toshiba Corp | Semiconductor light-emitting element, manufacture thereof and light-emitting device |
JP2002151739A (en) * | 2000-11-09 | 2002-05-24 | Showa Denko Kk | Flip-chip semiconductor light emitting device, its manufacturing method, light emitting diode lamp, display unit, and electrode of flip-chip type semiconductor light emitting device |
KR20030073054A (en) * | 2002-03-08 | 2003-09-19 | 에피밸리 주식회사 | Semiconductor LED device and method thereof |
KR100576872B1 (en) * | 2004-09-17 | 2006-05-10 | 삼성전기주식회사 | Nitride semiconductor light emitting diode with esd protection capacity |
-
2009
- 2009-10-28 KR KR1020090102807A patent/KR101047708B1/en active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10294491A (en) | 1997-04-22 | 1998-11-04 | Toshiba Corp | Semiconductor light-emitting element, manufacture thereof and light-emitting device |
JP2002151739A (en) * | 2000-11-09 | 2002-05-24 | Showa Denko Kk | Flip-chip semiconductor light emitting device, its manufacturing method, light emitting diode lamp, display unit, and electrode of flip-chip type semiconductor light emitting device |
KR20030073054A (en) * | 2002-03-08 | 2003-09-19 | 에피밸리 주식회사 | Semiconductor LED device and method thereof |
KR100576872B1 (en) * | 2004-09-17 | 2006-05-10 | 삼성전기주식회사 | Nitride semiconductor light emitting diode with esd protection capacity |
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KR20110046008A (en) | 2011-05-04 |
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