KR101039264B1 - 적색 질화물 형광체 및 이를 이용한 백색 발광다이오드 - Google Patents
적색 질화물 형광체 및 이를 이용한 백색 발광다이오드 Download PDFInfo
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- KR101039264B1 KR101039264B1 KR1020080087650A KR20080087650A KR101039264B1 KR 101039264 B1 KR101039264 B1 KR 101039264B1 KR 1020080087650 A KR1020080087650 A KR 1020080087650A KR 20080087650 A KR20080087650 A KR 20080087650A KR 101039264 B1 KR101039264 B1 KR 101039264B1
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- 150000004767 nitrides Chemical class 0.000 title claims abstract description 52
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- 229910052712 strontium Inorganic materials 0.000 claims description 7
- 229910052771 Terbium Inorganic materials 0.000 claims description 6
- 229910052788 barium Inorganic materials 0.000 claims description 6
- 229910052691 Erbium Inorganic materials 0.000 claims description 5
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 5
- 229910052749 magnesium Inorganic materials 0.000 claims description 5
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 5
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 4
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- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
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- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
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- 238000005245 sintering Methods 0.000 description 1
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- 229910052727 yttrium Inorganic materials 0.000 description 1
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- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
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Abstract
Description
여기서, 고상반응이란 상기 2종 이상의 산화물이나 질화물 등을 혼합하여 고체간에 반응을 일으키게 함으로서 원하는 조성의 분말을 얻는 방법을 뜻하며, 반응온도는 특별히 제한된 바는 없으나, 600 ~ 1800℃의 온도 범위에서 수행하는 것이 바람직하다. 그리고, 그 구체적 방법에 대해 설명하면 다음과 같다.
이상에서 설명한 실험 결과들은 (Ba1.8-xMx)ReySi8Al4N16 형광체 중 M원소는 Ca, Ba, Sr, Mg 및 Zn 중에서 선택된 1종 또는 2종 이상의 금속원소이고, 몰 비는 0.01≤ x ≤0.5 및 0.001≤ y ≤1.0의 값을 가지며, Re는 Ce, Pr, Eu, Tb, Yb, Er 및 Mn 등으로 구성되어 있는 그룹 중 적어도 1개 이상의 원소인 모든 경우의 조합에서 평균적으로 나타난 특성을 비교한 것들이다.
Claims (13)
- 하기 [화학식 1]로 표시되며, 희토류 원소에 의하여 활성화된 질화물 형광체인 것을 특징으로 하는 적색 질화물 형광체.[화학식 1](Ba1.8-xMx)ReySi8Al4N16(상기식에서, M원소는 Ca, Ba, Sr, Mg 및 Zn 중에서 선택된 1종 또는 2종 이상의 금속원소이고, 몰 비는 0.01≤ x ≤0.5 및 0.001≤ y ≤1.0의 값을 가지며, Re는 Ce, Pr, Eu, Tb, Yb, Er 및 Mn 등으로 구성되어 있는 그룹 중 적어도 1개 이상의 원소임.)
- 제 1 항에 있어서,상기 질화물 형광체의 여기 파장은 300 ~ 500nm 이고, 방출 파장은 520 ~ 700 nm 인 것을 특징으로 하는 적색 질화물 형광체.
- 삭제
- 청구항 1항에 기재된 질화물 적색 형광체 (Ba1.8-xMx)ReySi8Al4N16 를 300 ~ 500 nm 파장의 발광 다이오드 광원으로 여기시켜 520 ~ 700 nm 대역의 방출 파를 발생시키고, 이를 이용하여 백색의 광을 형성하는 것을 특징으로 하는 백색 발광 다이오드.
- 제 4 항에 있어서,상기 발광 다이오드 광원의 주 파장은 390 ~ 480 nm 인 것을 특징으로 하는 백색 발광 다이오드.
- 제 4 항에 있어서,상기 적색 질화물 형광체를 후에 방출되는 적색광의 피크 파장 610 ~ 680nm 인 것을 특징으로 하는 백색 발광 다이오드.
- 제 4 항에 있어서,상기 Re는 Eu를 사용하고, 0.001 ≤ y ≤ 0.3 인 것을 특징으로 하는 백색 발광 다이오드.
- 제 4 항에 있어서,상기 적색 질화물 형광체는 투명 에폭시 또는 실리콘 수지에 혼합되어 디스펜싱 방법에 의해 상기 발광 다이오드 광원을 구성하는 칩 상에 도포된 것을 특징으로 하는 백색 발광 다이오드.
- 제 4 항에 있어서,상기 적색 질화물 형광체는 투명 에폭시 또는 실리콘 수지에 혼합되어 트랜스퍼 몰딩에 의해 상기 발광 다이오드 광원을 구성하는 칩 상에 도포된 것을 특징으로 하는 백색 발광 다이오드.
- 제 4 항에 있어서,상기 적색 질화물 형광체는 투명 에폭시 또는 실리콘 수지에 혼합되어 스퍼 터링 또는 증착에 의해 상기 발광 다이오드 광원을 구성하는 칩 상에 도포된 것을 특징으로 하는 백색 발광 다이오드.
- 청구항 1항에 기재된 적색 질화물 형광체 (Ba1.8-xMx)ReySi8Al4N16 를 300 ~ 500 nm 파장의 발광 다이오드 광원으로 여기 시켜 520 ~ 700 nm 대역의 방출파를 발생시키고, 이를 이용하여 백색의 광을 형성하는 것을 특징으로 하는 포탄형 백색 발광 다이오드 제품.
- 청구항 1항에 기재된 적색 질화물 형광체 (Ba1.8-xMx)ReySi8Al4N16 를 300 ~ 500 nm 파장의 발광 다이오드 광원으로 여기 시켜 520 ~ 700 nm 대역의 방출 파를 발생시키고, 이를 이용하여 백색의 광을 형성하는 것을 특징으로 하는 표면 실장 형 백색 발광 다이오드 제품.
- 청구항 1항에 기재된 적색 질화물 형광체 (Ba1 .8- xMx)ReySi8Al4N16 를 300 ~ 500 nm 파장의 발광 다이오드 광원으로 여기 시켜 520 ~ 700 nm 대역의 방출 파를 발생시키고, 이를 이용하여 백색의 광을 형성하는 것을 특징으로 하는 에폭시 렌즈를 가진 표면 실장형 백색 발광 다이오드 제품.
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US9458377B2 (en) | 2013-06-20 | 2016-10-04 | Samsung Electronics Co., Ltd. | Red phosphor, white light emitting device, display apparatus and illumination apparatus |
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US9458377B2 (en) | 2013-06-20 | 2016-10-04 | Samsung Electronics Co., Ltd. | Red phosphor, white light emitting device, display apparatus and illumination apparatus |
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