KR100993967B1 - 알루미늄 합금 스퍼터 타깃 및 이를 형성하는 방법 - Google Patents
알루미늄 합금 스퍼터 타깃 및 이를 형성하는 방법 Download PDFInfo
- Publication number
- KR100993967B1 KR100993967B1 KR1020047007243A KR20047007243A KR100993967B1 KR 100993967 B1 KR100993967 B1 KR 100993967B1 KR 1020047007243 A KR1020047007243 A KR 1020047007243A KR 20047007243 A KR20047007243 A KR 20047007243A KR 100993967 B1 KR100993967 B1 KR 100993967B1
- Authority
- KR
- South Korea
- Prior art keywords
- aluminum alloy
- target
- sputter target
- grain
- sputter
- Prior art date
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/04—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
번호 | 가압 | 압연 | 어닐링 |
5 | 극저온 | 극저온 | 200 |
6 | 극저온 | 극저온 | 무 |
7 | 상온 | 극저온 | 무 |
8 | 극저온 | 극저온 | 200 |
9 | 상온 | 극저온 | 무 |
Claims (10)
- 알루미늄합금 스퍼터 타깃이며,스퍼터 타깃은 스퍼터 타깃을 스퍼터링하기 위한 스퍼터 타깃면을 가지며,스퍼터 타깃면은 적어도 35% (200)방위의 결정립 방위비를 갖는 집합조직을 갖는-준안정 결정립구조를 가지며,집합조직을 갖는-준안정 결정립구조는 스퍼터 타깃의 스퍼터링 동안 안정되며, 5㎛ 미만의 결정립 사이즈를 갖는 알루미늄합금 스퍼터 타깃.
- 제1항에 있어서, 집합조직을 갖는-준안정 결정립구조는 10% 미만의 재결정 결정립을 갖는 알루미늄합금 스퍼터 타깃.
- 알루미늄합금 스퍼터 타깃이며,알루미늄합금은 알루미늄-구리 합금, 알루미늄-실리콘 합금, 그리고 알루미늄-구리-실리콘 합금으로 구성된 그룹에서 선택되며,스퍼터 타깃은 스퍼터 타깃을 스퍼터링하기 위한 스퍼터 타깃면을 가지며,스퍼터링 타깃면은 집합조직을 갖는-준안정 결정립구조를 가지며.집합조직을 갖는-준안정 결정립구조는 적어도 35% (200)방위의 결정립 방위비를 가지며, 스퍼터 타깃의 스퍼터링 동안 안정되며, 1㎛ 미만의 결정립 사이즈를 갖는 알루미늄합금 스퍼터 타깃.
- 제3항에 있어서, 집합조직을 갖는-준안정 결정립구조는 2% 미만의 재결정 결정립을 갖는 알루미늄합금 스퍼터 타깃.
- 제3항에 있어서, 집합조직을 갖는-준안정 결정립구조는 적어도 40% (200)방위와 5 내지 35%의 (111), (220), 그리고 (311)의 각 방위의 결정립 방위비를 갖는 알루미늄합금 스퍼터 타깃.
- 제3항에 있어서, 상기 알루미늄합금은 중량백분율로 Al-0.5Cu이며, 타깃은 적어도 100MPa의 항복 강도를 갖는 알루미늄합금 스퍼터 타깃.
- 제3항에 있어서, 스퍼터 타깃은 단블럭구조를 갖는 스퍼터 타깃.
- 알루미늄합금 스퍼터 타깃을 형성하는 방법이며,결정립을 갖는 알루미늄합금 타깃 블랭크를 -50℃ 미만의 온도로 냉각시키는 단계와,냉각된 알루미늄합금 타깃 블랭크를 변형시켜, 알루미늄합금 타깃 블랭크에 소성변형을 유도하고 결정립의 사이즈를 줄여 집합조직을 갖는-준안정 결정립구조를 형성하는 단계와,알루미늄합금 타깃 블랭크를 마무리작업하여, 마무리작업된 스퍼터 타깃의 집합조직을 갖는-준안정 결정립구조를 유지하도록 200℃ 아래의 저온에서 마무리작업된 스퍼터 타깃을 형성하는 단계를 포함하는, 알루미늄합금 스퍼터 타깃을 형성하는 방법.
- 알루미늄합금 스퍼터 타깃을 형성하는 방법이며,결정립을 갖는 알루미늄합금 타깃 블랭크를 -80℃ 미만의 온도로 냉각시키는 단계와,냉각된 알루미늄합금 타깃 블랭크를 변형시켜, 알루미늄합금 타깃 블랭크에 소성변형을 유도하고 결정립의 사이즈를 줄여 집합조직을 갖는-준안정 결정립구조를 형성하는 단계와,알루미늄합금 타깃 블랭크를 마무리작업하여, 마무리작업된 스퍼터 타깃의 집합조직을 갖는-준안정 결정립구조를 유지하도록 200℃ 아래의 저온에서 마무리작업된 스퍼터 타깃을 형성하는 단계를 포함하는, 알루미늄합금 스퍼터 타깃을 형성하는 방법.
- 제9항에 있어서, 스퍼터링 동안 집합조직을 갖는-준안정 결정립구조를 유지하도록 150℃ 미만의 온도에서 알루미늄합금 타깃을 스퍼터링하는 단계를 더 포함하는, 알루미늄합금 스퍼터 타깃을 형성하는 방법.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/991,851 | 2001-11-14 | ||
US09/991,851 US6605199B2 (en) | 2001-11-14 | 2001-11-14 | Textured-metastable aluminum alloy sputter targets and method of manufacture |
PCT/US2002/033717 WO2003066929A2 (en) | 2001-11-14 | 2002-10-23 | Textured-metastable aluminum alloy sputter targets |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20040058280A KR20040058280A (ko) | 2004-07-03 |
KR100993967B1 true KR100993967B1 (ko) | 2010-11-11 |
Family
ID=25537645
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020047007243A KR100993967B1 (ko) | 2001-11-14 | 2002-10-23 | 알루미늄 합금 스퍼터 타깃 및 이를 형성하는 방법 |
Country Status (8)
Country | Link |
---|---|
US (2) | US6605199B2 (ko) |
EP (1) | EP1444378A4 (ko) |
JP (1) | JP4351910B2 (ko) |
KR (1) | KR100993967B1 (ko) |
AU (1) | AU2002365427A1 (ko) |
IL (2) | IL161750A0 (ko) |
TW (1) | TWI287046B (ko) |
WO (1) | WO2003066929A2 (ko) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010047838A1 (en) * | 2000-03-28 | 2001-12-06 | Segal Vladimir M. | Methods of forming aluminum-comprising physical vapor deposition targets; sputtered films; and target constructions |
US20040256218A1 (en) * | 2002-05-31 | 2004-12-23 | Glass Howard L. | Thin films and methods of forming thin films utilizing ECAE-targets |
US7235143B2 (en) * | 2002-08-08 | 2007-06-26 | Praxair S.T. Technology, Inc. | Controlled-grain-precious metal sputter targets |
US20050279630A1 (en) * | 2004-06-16 | 2005-12-22 | Dynamic Machine Works, Inc. | Tubular sputtering targets and methods of flowforming the same |
US7620938B2 (en) * | 2005-10-31 | 2009-11-17 | Microsoft Corporation | Compressed program recording |
US20070251819A1 (en) * | 2006-05-01 | 2007-11-01 | Kardokus Janine K | Hollow cathode magnetron sputtering targets and methods of forming hollow cathode magnetron sputtering targets |
US8702919B2 (en) * | 2007-08-13 | 2014-04-22 | Honeywell International Inc. | Target designs and related methods for coupled target assemblies, methods of production and uses thereof |
JP5236976B2 (ja) * | 2008-03-27 | 2013-07-17 | 住友化学株式会社 | Al−Cu合金の導電率向上方法 |
US8453487B2 (en) * | 2008-10-10 | 2013-06-04 | Tosoh Smd, Inc. | Circular groove pressing mechanism and method for sputtering target manufacturing |
KR20110106787A (ko) * | 2009-01-22 | 2011-09-29 | 토소우 에스엠디, 인크 | 모놀리식 알루미늄 합금 타겟 및 그 제조방법 |
WO2013105424A1 (ja) * | 2012-01-12 | 2013-07-18 | Jx日鉱日石金属株式会社 | 高純度銅スパッタリングターゲット |
CN110205590A (zh) * | 2019-05-08 | 2019-09-06 | 东莞市欧莱溅射靶材有限公司 | 一种超高纯铝溅射靶材及其轧制方法 |
CN112538598B (zh) * | 2020-12-02 | 2021-12-24 | 爱发科电子材料(苏州)有限公司 | 铝硅靶材的制作方法 |
CN115233123B (zh) * | 2022-07-20 | 2023-05-12 | 宁波江丰电子材料股份有限公司 | 一种铝铜合金靶坯及其制备方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6126791A (en) | 1997-11-26 | 2000-10-03 | Applied Materials, Inc. | Target for use in magnetron sputtering of aluminum for forming metallization films having low defect densities and methods for manufacturing and using such target |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US54457A (en) * | 1866-05-01 | Improvement in cross-heads | ||
DE2617289C3 (de) | 1975-04-21 | 1981-03-19 | Hitachi, Ltd., Tokyo | Verfahren zum plastischen Verformen von kubisch flächenzentrierten Metallen |
SE7702015L (sv) | 1976-03-31 | 1977-10-01 | Union Carbide Corp | Sett att kryogent forma en metallplat av en metall med ytcentrerat kubiskt rumdgitter till ett alster av onskad kontfiguration |
JPH03115562A (ja) | 1989-09-27 | 1991-05-16 | Nippon Mining Co Ltd | スパッタリングターゲット材の製造方法 |
JP2857015B2 (ja) * | 1993-04-08 | 1999-02-10 | 株式会社ジャパンエナジー | 高純度アルミニウムまたはその合金からなるスパッタリングターゲット |
US5590389A (en) * | 1994-12-23 | 1996-12-31 | Johnson Matthey Electronics, Inc. | Sputtering target with ultra-fine, oriented grains and method of making same |
US5600989A (en) | 1995-06-14 | 1997-02-11 | Segal; Vladimir | Method of and apparatus for processing tungsten heavy alloys for kinetic energy penetrators |
JPH09272970A (ja) | 1996-04-05 | 1997-10-21 | Japan Energy Corp | 高純度コバルトスパッタリングターゲット及びその製造方法 |
US5766380A (en) | 1996-11-05 | 1998-06-16 | Sony Corporation | Method for fabricating randomly oriented aluminum alloy sputtering targets with fine grains and fine precipitates |
US5993621A (en) | 1997-07-11 | 1999-11-30 | Johnson Matthey Electronics, Inc. | Titanium sputtering target |
JP4511733B2 (ja) | 1998-09-11 | 2010-07-28 | トーソー エスエムディー,インク. | スパッターターゲット低温接合法とそれによって製造されるターゲットアセンブリ |
JP3115562B2 (ja) | 1999-04-21 | 2000-12-11 | 株式会社オリエンタルランド | 金箔を用いた装飾用シ−ル及びその製造方法 |
JP2001011609A (ja) * | 1999-06-24 | 2001-01-16 | Honeywell Electronics Japan Kk | スパッタリングターゲット及びその製造方法 |
US6878250B1 (en) * | 1999-12-16 | 2005-04-12 | Honeywell International Inc. | Sputtering targets formed from cast materials |
US20010047838A1 (en) * | 2000-03-28 | 2001-12-06 | Segal Vladimir M. | Methods of forming aluminum-comprising physical vapor deposition targets; sputtered films; and target constructions |
US6197129B1 (en) | 2000-05-04 | 2001-03-06 | The United States Of America As Represented By The United States Department Of Energy | Method for producing ultrafine-grained materials using repetitive corrugation and straightening |
US20030098102A1 (en) * | 2001-11-13 | 2003-05-29 | Perry Andrew C. | High-purity aluminum sputter targets and method of manufacture |
-
2001
- 2001-11-14 US US09/991,851 patent/US6605199B2/en not_active Expired - Lifetime
-
2002
- 2002-10-23 JP JP2003566270A patent/JP4351910B2/ja not_active Expired - Fee Related
- 2002-10-23 WO PCT/US2002/033717 patent/WO2003066929A2/en active Application Filing
- 2002-10-23 IL IL16175002A patent/IL161750A0/xx unknown
- 2002-10-23 EP EP02805699A patent/EP1444378A4/en not_active Withdrawn
- 2002-10-23 KR KR1020047007243A patent/KR100993967B1/ko active IP Right Grant
- 2002-10-23 AU AU2002365427A patent/AU2002365427A1/en not_active Abandoned
- 2002-11-12 TW TW091133156A patent/TWI287046B/zh not_active IP Right Cessation
-
2003
- 2003-04-11 US US10/411,212 patent/US6942763B2/en not_active Expired - Lifetime
-
2004
- 2004-05-03 IL IL161750A patent/IL161750A/en not_active IP Right Cessation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6126791A (en) | 1997-11-26 | 2000-10-03 | Applied Materials, Inc. | Target for use in magnetron sputtering of aluminum for forming metallization films having low defect densities and methods for manufacturing and using such target |
US6171455B1 (en) | 1997-11-26 | 2001-01-09 | Applied Materials Inc. | Target for use in magnetron sputtering of aluminum for forming metallization films having low defect densities and methods for manufacturing and using such target |
Also Published As
Publication number | Publication date |
---|---|
AU2002365427A1 (en) | 2003-09-02 |
TWI287046B (en) | 2007-09-21 |
EP1444378A4 (en) | 2008-04-02 |
TW200300176A (en) | 2003-05-16 |
JP4351910B2 (ja) | 2009-10-28 |
IL161750A (en) | 2009-09-22 |
KR20040058280A (ko) | 2004-07-03 |
US6942763B2 (en) | 2005-09-13 |
US20030089430A1 (en) | 2003-05-15 |
IL161750A0 (en) | 2005-11-20 |
WO2003066929A3 (en) | 2003-10-23 |
EP1444378A2 (en) | 2004-08-11 |
US6605199B2 (en) | 2003-08-12 |
JP2005517088A (ja) | 2005-06-09 |
WO2003066929A2 (en) | 2003-08-14 |
US20030205463A1 (en) | 2003-11-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7740723B2 (en) | Controlled-grain-precious metal sputter targets | |
KR100993967B1 (ko) | 알루미늄 합금 스퍼터 타깃 및 이를 형성하는 방법 | |
KR100688832B1 (ko) | 초미세 결정-구리 기재의 스퍼터 타겟 | |
JP2012515847A (ja) | 一体構造のアルミニウム合金ターゲットとそれを製造する方法 | |
KR100993463B1 (ko) | 고순도 강자성 스퍼터 타겟 | |
EP1444376B1 (en) | High-purity aluminum sputter targets | |
US6835251B2 (en) | High-purity aluminum sputter targets and method of manufacture |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20131023 Year of fee payment: 4 |
|
FPAY | Annual fee payment |
Payment date: 20141023 Year of fee payment: 5 |
|
FPAY | Annual fee payment |
Payment date: 20151023 Year of fee payment: 6 |
|
FPAY | Annual fee payment |
Payment date: 20161024 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20171020 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20181031 Year of fee payment: 9 |