KR100984618B1 - Manufacturing method of thin silicon solar cells - Google Patents

Abstract

The present invention relates to a method of manufacturing a thin film silicon solar cell, the method comprising: forming a seed metal layer on a substrate, forming a capping layer on the seed metal layer, and patterning a portion of the seed metal layer to be exposed. And forming a first amorphous silicon layer on the substrate including the patterned capping layer, and using the exposed seed metal layer as a seed to form a first polycrystalline silicon layer by crystallization of the first amorphous silicon layer. And forming a second amorphous silicon layer on the first polycrystalline silicon layer, and forming a second polycrystalline silicon layer by crystallization of the second amorphous silicon layer using the first polycrystalline silicon layer as a seed. By including the step, there is an effect that can improve the conversion efficiency of the thin film silicon solar cell and reduce the manufacturing cost.

High melting point metals, silicon solar cells, polycrystalline silicon

Description

MANUFACTURING METHOD OF THIN SILICON SOLAR CELLS

The present invention relates to a method for manufacturing a thin film silicon solar cell, and more particularly, a high melting point metal is removed during a crystallization process of an amorphous silicon layer using a seed metal layer and a capping layer patterned by a high melting point metal. The present invention relates to a method for manufacturing a thin film silicon solar cell capable of inducing crystallization through a seed metal from an uneven region to form a high quality polycrystalline silicon layer.

In general, a solar cell using amorphous silicon (a-Si) or polycrystalline silicon has been developed for the purpose of lowering cost or increasing efficiency.

However, the problem of deterioration by light of amorphous silicon (a-Si) solar cells has not been sufficiently solved yet. Accordingly, a polycrystalline silicon solar cell is used. For example, a polycrystalline silicon solar cell such as a bulk polycrystalline silicon solar cell has a disadvantage in that a material cost is high.

Therefore, the development of low cost and high efficiency polycrystalline thin film silicon solar cells is urgently required.

The polycrystalline thin film silicon solar cell may be formed by a high temperature heat treatment on a substrate on which amorphous silicon is formed. For example, the method of crystallizing the amorphous silicon into polycrystalline silicon may be a solid phase crystallization method or an excimer laser crystal. Excimer Laser Crystallization and the like can be used.

The solid phase crystallization method anneals the amorphous silicon layer over a few hours to several tens of hours at a temperature of about 700 ° C. or less, and the excimer laser crystallization method scans the excimer laser into the amorphous silicon layer at a locally high temperature for a very short time. It is a method of crystallization by heating.

However, the above-mentioned solid-phase crystallization method is not only very long process time but also heat treatment at a high temperature for a long time, so that deformation is easily generated on the substrate, and high deposition temperature allows impurities to flow from the substrate. In the case of using the light and the like, problems such as thermal expansion coefficient difference occur.

The excimer laser crystallization method can crystallize in a short time, so that problems such as deformation of the substrate or inflow of impurities can be solved to some extent, compared to the solid phase crystallization method, but the manufacturing cost of solar cells increases because expensive laser devices are required. The problem arises.

The present invention has been made to solve the above-mentioned problems, an object of the present invention is to form a polycrystalline silicon layer by inducing crystallization through the catalytic metal to form a high-quality polycrystalline silicon layer at a low temperature, the production cost It is to provide a method for manufacturing a thin film silicon solar cell that can be saved.

In order to achieve the above object, a first aspect of the present invention, (a) forming a seed metal layer on the substrate; (b) forming a capping layer over the seed metal layer and patterning a portion of the seed metal layer to expose; (c) forming a first amorphous silicon layer on the substrate including the patterned capping layer; (d) forming a first polycrystalline silicon layer by crystallization of the first amorphous silicon layer using the exposed seed metal layer as a seed; (e) forming a second amorphous silicon layer on the first polycrystalline silicon layer; And (f) forming a second polycrystalline silicon layer by crystallizing the second amorphous silicon layer using the first polycrystalline silicon layer as a seed.

Here, in the step (b), the capping layer is preferably patterned by forming a seed metal crystallization region having a plurality of openings to crystallize the first amorphous silicon layer using the seed metal layer.

Preferably, the capping layer may be made of a high melting point metal selected from Mo, Cr, Ti, or W.

Preferably, the thickness of the capping layer may be 100 kPa to 1 ㎛.

Preferably, the seed metal layer may be made of any one metal selected from Ni, Pd, Ag, Au, Al, Sn, Sb, Cu, Co, Tr, Ru, Rh, Cd, or Pt.

Preferably, the seed metal layer may be in the form of a metal thin film or metal powder.

Preferably, the thickness of the seed metal layer may be 10 to 1000 mm 3.

Preferably, the first and second amorphous silicon layers may be n-type and p-type amorphous silicon layers, respectively.

Preferably, the first and second polycrystalline silicon layers may be n-type and p-type polycrystalline silicon layers, respectively.

Preferably, the crystallization may be made by heat treatment.

Preferably, the heat treatment may be performed at 300 to 800 ℃.

Preferably, after the step (f), (f-1) forming a transparent electrode on the second polycrystalline silicon layer; And (f-2) forming a transparent protective film on the transparent electrode.

Preferably, the transparent electrode may be made of SnO 2 or ITO.

A second aspect of the invention, (a ') forming an electrode layer on a substrate; (b ') forming a seed metal layer on the electrode layer and patterning the seed metal layer; (c ') forming a first amorphous silicon layer on the seed metal layer; (d ') forming a first polycrystalline silicon layer by crystallizing the first amorphous silicon layer using the seed metal layer as a seed; (e ') forming a second amorphous silicon layer on the first polycrystalline silicon layer; And (f ') forming a second polycrystalline silicon layer by crystallizing the second amorphous silicon layer using the first polycrystalline silicon layer as a seed.

Here, the electrode layer may be made of any one of the high melting point metal selected from Mo, Cr, Ti or W.

Preferably, the electrode layer may have a thickness of 100 μm to 1 μm.

Preferably, the seed metal layer may be made of any one metal selected from Ni, Pd, Ag, Au, Al, Sn, Sb, Cu, Co, Tr, Ru, Rh, Cd, or Pt.

Preferably, the seed metal layer may be in the form of a metal thin film or metal powder.

Preferably, the thickness of the seed metal layer may be 10 to 1000 mm 3.

Preferably, the first and second amorphous silicon layers may be n-type and p-type amorphous silicon layers, respectively.

Preferably, the first and second polycrystalline silicon layers may be n-type and p-type polycrystalline silicon layers, respectively.

Preferably, the crystallization may be made by heat treatment.

Preferably, the heat treatment may be performed at 300 to 800 ℃.

Preferably, after step (f '), (f'-1) forming a transparent electrode on the second polycrystalline silicon layer; And (f'-2) forming a transparent protective film on the transparent electrode.

Preferably, the transparent electrode may be made of SnO 2 or ITO.

According to the manufacturing method of the thin-film silicon solar cell of the present invention as described above, by performing a crystallization process for the amorphous silicon layer using a capping layer patterned by a catalytic metal layer and a high melting point metal of high-quality polycrystalline silicon The layer can be formed, there is an advantage that can reduce the manufacturing cost of the solar cell.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the following embodiments of the present invention may be modified into various other forms, and the scope of the present invention is not limited to the embodiments described below. The embodiments of the present invention are provided to enable those skilled in the art to more fully understand the present invention.

(First embodiment)

1A to 1F are cross-sectional views illustrating a method of manufacturing a thin film silicon solar cell according to a first embodiment of the present invention. 2 is a plan view illustrating the capping layer 120 of the thin film silicon solar cell applied to the first embodiment of the present invention.

Referring to FIG. 1A, a substrate 100 having a seed metal layer 110 deposited thereon is prepared.

Herein, the substrate 100 may be a glass substrate, a plastic substrate, a metal substrate, or the like, and a substrate made of various materials may be used.

The seed metal layer 110 may be formed using any one of metals such as Ni, Pd, Ag, Au, Al, Sn, Sb, Cu, Co, Tr, Ru, Rh, Cd, or Pt. For example, it is possible to deposit in the form of a metal thin film or a metal powder. However, it is not limited to this.

For example, when the seed metal layer 110 is formed of Al or the like and is used as an electrode, the seed metal layer 110 may be formed in the form of a metal thin film, and the seed metal layer 110 may be formed of, for example, Ni or Pd. In the case of forming the metal, since the use as the electrode is somewhat limited, it is preferable to form the metal powder or the like in consideration of the production cost or to minimize the thickness even when using the metal thin film.

The seed metal layer 110 may be a ionic and valence silicon layer of the seed metal, for example, the first amorphous silicon layer (135 in FIG. 1C) during the crystallization process of the first amorphous silicon layer (135 in FIG. 1C). It acts as a seed that causes a large growth of silicon, and, for example, enables the crystallization of the first amorphous silicon layer (135 in FIG. 1C) to proceed even at a low temperature, thereby enabling high efficiency of the solar cell at a low cost. Let's do it.

As the method of forming the seed metal layer 110 on the substrate 100, various methods such as chemical vapor deposition (CVD) or spin coating may be used, but are not limited thereto.

For example, when the seed metal layer 110 is in the form of a metal powder or the like, it may be formed to a thickness of about 10 to 100 kPa, and in the form of a metal thin film, it is preferable to form a thickness of 10 to 1000 kPa.

1B and 2, the capping layer 120 is formed on the seed metal layer 110. The capping layer 120 may be formed using any one metal of a high melting point metal such as molybdenum (Mo), chromium (Cr), titanium (Ti), or tungsten (W), and the thickness thereof may be, for example, It is preferable to form in the range of about 100 kPa to 1 m.

Subsequently, the capping layer 120 is patterned to form a seed metal crystallization region T of a certain type. The seed metal crystallization region T is a region in which the first amorphous silicon layer (135 of FIG. 1C) and the seed metal layer 110 are in direct contact with each other, and the seed metal during the crystallization process of the first amorphous silicon layer (135 of FIG. 1C). Ions and atoms in the silicon layer, that is, the first amorphous silicon layer (135 of FIG.

On the other hand, the shape of the seed metal crystallization region (T) can be formed in the form of a plurality of stripes, etc. as shown in Figure 2, in addition to freely formed in the form of a grid pattern or a plurality of triangles, circles, ellipses, other polygons, etc. It is possible.

Meanwhile, the capping layer 120 may be formed of a high melting point metal (eg, molybdenum (Mo), chromium (Cr), titanium (Ti), tungsten (W), etc.) except for the seed metal crystallization region (T). Formation may serve to prevent ions and atoms of silicon from flowing into the seed metal layer 110 by crystallization.

For example, during the crystallization process of the first amorphous silicon layer (135 in FIG. 1C), the ions and atoms of the seed metal migrate to the first amorphous silicon layer (135 in FIG. 1C) and the first amorphous silicon layer (FIG. 1C). Ions and atoms of 135 are transferred to the seed metal layer 110.

Accordingly, as the ions and atoms of the first amorphous silicon layer (135 of FIG. 1C) move to the seed metal layer 110, the seed metal layer 110 is accompanied by volume expansion and an increase in resistance, thereby causing electron movement. Because of the limitation, it is difficult to use the seed metal layer 110 as an electrode.

In this case, the capping layer 120 may be used to prevent the lower seed metal layer 110 from directly contacting the first amorphous silicon layer 135 of FIG. 1C in regions other than the seed metal crystallization region T. Accordingly, by increasing the resistance of the seed metal layer 110 due to the movement of silicon ions and atoms, the seed metal layer 110 for a region other than the seed metal crystallization region T may be used as an electrode. have. In this case, the electrode may be used, for example, as a cathode.

In addition, the capping layer 120 may control the amount of seeds grown during crystallization by adjusting the size of the seed metal crystallization region T. FIG.

For example, atoms of the seed metal typically inhibit the transport of carriers in the silicon crystalline thin film, which is why it is desirable to use as few seed seeds as possible.

Therefore, when the size of the seed metal crystallization region T formed on the capping layer 120 is adjusted, the ions and valences of the seed metal serving as seeds are increased to the first non-crystalline silicon layer (135 in FIG. 1C). It can effectively prevent the inflow.

In addition, the capping layer 120 may be used as an electrode (eg, a cathode). In this case, for example, a high melting point metal (eg, molybdenum (Mo), chromium (Cr), titanium (Ti), or tungsten (W)) may be used. It is also possible to use as a reflecting electrode to increase the internal reflectance of the solar light in the solar cell by using).

As a method of patterning the capping layer 120 on the seed metal layer 110, for example, a method such as photolithography may be used, but is not limited thereto.

When the capping layer 120 is patterned, for example, using a photolithography method in detail, first, a photoresist film is coated on the seed metal layer 110.

Next, the coated photoresist film is exposed and developed to expose a portion of the capping layer 120 to be etched to form a photoresist pattern having a predetermined shape.

Finally, when the exposed capping layer 120 is etched using the formed photoresist pattern as an etching mask, the patterned capping layer 120 may be formed on the seed metal layer 110. In this case, the etching may be performed until the seed metal layer 110 is exposed.

1C and 1D, a first amorphous silicon layer 135 is formed on the capping layer 120. The first amorphous silicon layer 135 may be formed by, for example, chemical vapor deposition (CVD), but is not limited thereto.

In addition, the first amorphous silicon layer 135 may be formed of, for example, an n-type amorphous silicon layer, but is not limited thereto.

Thereafter, the first amorphous silicon layer is crystallized to form the first polycrystalline silicon layer 135 ′. In this case, the first amorphous silicon layer 135 is introduced with ions and atoms of the seed metal from the seed metal layer 110 contacting each other through the exposed region of the capping layer 120, so that a predetermined grain, that is, a seed, is formed. ) Grows.

Each of these seeds has a constant crystal direction, and each seed can continue to grow in the lateral direction (solid line in the drawing) to form the first polycrystalline silicon layer 135 '.

That is, the seed may grow to the side to meet with neighboring grains (Grain) to form a grain boundary (Grain boundary) can be completely crystallized, through which, for example, it is possible to form a polycrystalline silicon layer.

In this case, the crystallization may be performed, for example, by heat treatment at a temperature of about 300 to 800 ° C., and the seed may form a high quality crystallized silicon layer even at a low temperature.

Meanwhile, during the crystallization, as described above, the silicon ions and atoms of the first amorphous silicon layer 135 move to the seed metal layer 110, and the seed metal layer 110 is moved by the movement of the silicon ions and atoms. Accompanied by volume expansion.

At this time, in the seed metal crystallization region T in which the seed metal layer 110 and the first amorphous silicon layer 135 are in direct contact, internal light scattering characteristics due to volume expansion of the seed metal layer 110 are improved, and thus the solar cell is caused by internal light. It is also possible to improve the conversion efficiency.

Referring to FIG. 1E, after forming a second amorphous silicon layer (not shown) on the first polycrystalline silicon layer 135 ′, a second crystallization process is performed to form the second polycrystalline silicon layer 136.

In this case, the second amorphous silicon layer (not shown) is preferably formed of a p-type amorphous silicon layer, but is not limited thereto.

On the other hand, the crystallization may be performed through a heat treatment, the crystallization temperature at this time is preferably about 300 to 800 ℃, for example, the first polycrystalline silicon layer 135 ′ formed at the bottom can be crystallized as a seed have.

In this case, for example, at least one other polycrystalline silicon layer may be further stacked on the second polycrystalline silicon layer 136, each of which may be sequentially crystallized using the polycrystalline silicon layer formed at the bottom as a seed. .

Through this series of processes, the solar cell layer 130 may be formed on the substrate 100.

Referring to FIG. 1F, for example, the transparent electrode 140 is formed on the solar cell layer 130. The transparent electrode 140 may be formed through ITO, SnO 2, or the like, but is not limited thereto. For example, the transparent electrode 140 may be used as an anode.

In addition, if necessary, it is possible to further form a transparent protective film 160 on the transparent electrode 140, which is, for example, to prevent damage or scratches of the solar cell due to external impact, for example, such as adhesive ( It is possible to form by bonding to the upper portion of the transparent electrode 140 through 150).

(2nd Example)

3A to 3G are cross-sectional views illustrating a method of manufacturing a thin film silicon solar cell according to a second embodiment of the present invention.

Referring to FIG. 3A, a substrate 300 having an electrode layer 310 deposited thereon is prepared.

Here, the substrate 300 may be a glass substrate, a plastic substrate or a metal substrate, and other substrates of various materials may be used, but the present invention is not limited thereto.

The electrode layer 310 may be formed using any one metal of a high melting point metal such as molybdenum (Mo), chromium (Cr), titanium (Ti), or tungsten (W), and the thickness thereof is, for example, about It is preferable to form in the range of 100 kPa-1 micrometer.

The electrode layer 310 is formed by using a high melting point metal (for example, molybdenum (Mo), chromium (Cr), titanium (Ti) or tungsten (W), etc.) having a high reflectance to sunlight, such as solar cells It is possible to improve the photoelectric conversion efficiency by using it as a reflecting electrode for increasing the internal reflectance of the sunlight in the solar cell.

Referring to FIG. 3B, a seed metal layer 320 is formed on the electrode layer 310.

The seed metal layer 320 may be formed using any one of metals such as Ni, Pd, Ag, Au, Al, Sn, Sb, Cu, Co, Tr, Ru, Rh, Cd, or Pt. For example, it is possible to deposit in the form of a metal thin film or a metal powder. However, it is not limited to this.

As a method of forming the seed metal layer 320 on the substrate 300, various methods such as chemical vapor deposition (CVD) or spin coating may be used, but are not limited thereto. It is preferable to form in thickness.

The seed metal layer 320 is introduced into the first amorphous silicon layer (335 in FIG. 3C) by ions and valences of the seed metal during the crystallization process of the first amorphous silicon layer (335 in FIG. 3C). It acts as a seed (S) that causes the large growth of silicon, and the crystallization of the first amorphous silicon layer (335 in FIG. 3C) can proceed even at low temperatures, thereby enabling high efficiency of the solar cell at low cost. do.

Thereafter, the seed metal layer 320 is patterned. The patterning of the seed metal layer 320 may be performed by selectively adjusting the shape and size in consideration of the amount of seed to be grown to the first amorphous silicon layer (335 of FIG. 3C) or the crystal size of the crystallized silicon. Patterning is possible.

Meanwhile, in addition to the method of forming and patterning the seed metal layer 320 in the form of a metal thin film or metal powder as described above, the seed metal layer 320 is divided into two or more pieces and dispersed in a predetermined pattern to form an electrode layer 310. It is possible to form on top of the above, and in this case as well, the shape is considered in consideration of the crystal size of the crystallized silicon or the amount of seed to be grown to the first amorphous silicon layer (335 in FIG. 3C). And it is possible to selectively form the size by dispersing in a predetermined pattern.

At this time, for example, the ions and atoms of the seed metal inhibit the transport of carriers in the crystalline thin film of crystallized silicon, so that the seed of the seed metal layer 320 can be used as the seed as the minimum possible seed metal. It is preferable to pattern other areas other than the area used as (Seed) so that they can be removed as much as possible.

3C and 3D, the first amorphous silicon layer 335 is formed on the capping layer 310 including the seed metal layer 320. The first amorphous silicon layer 335 may be formed by, for example, chemical vapor deposition (CVD), but is not limited thereto.

In addition, the first amorphous silicon layer 335 is preferably formed of, for example, an n-type amorphous silicon layer, but is not limited thereto.

Thereafter, crystallization is performed on the first amorphous silicon layer 335 to form the first polycrystalline silicon layer 335 ′.

In this case, in the first amorphous silicon layer 335, ions and atoms of the seed metal flow from the seed metal layer 320 to grow predetermined grains, that is, seeds.

Each of these seeds has a constant crystal direction, and each seed continues to grow in the lateral direction (solid line in the drawing) to form the first polycrystalline silicon layer 335 '.

That is, the seed may grow to the side to meet with neighboring grains (Grain) to form a grain boundary (Grain boundary) can be completely crystallized, through which, for example, it is possible to form a polycrystalline silicon layer.

On the other hand, the crystallization can be carried out, for example, by heat treatment at a temperature of about 300 to 800 ℃, through this seed (Seed) it is possible to form a high quality crystallized silicon layer even at low temperatures.

Referring to FIG. 3E, after forming a second amorphous silicon layer (not shown) on the first polycrystalline silicon layer 335 ′, a second crystallization process is performed to form the second polycrystalline silicon layer 336.

In this case, the second amorphous silicon layer (not shown) is preferably formed of a p-type amorphous silicon layer, but is not limited thereto.

On the other hand, the crystallization may be performed by heat treatment, the crystallization temperature at this time is preferably about 300 to 800 ℃, for example, the first polycrystalline silicon layer 335 ′ formed at the bottom can be crystallized as a seed have.

At this time, for example, at least one polycrystalline silicon layer may be further stacked on the second polycrystalline silicon layer 336, each of which may be crystallized using the polycrystalline silicon layer formed at the bottom as a seed.

Through this series of processes, the solar cell layer 330 can be formed on the substrate 300.

Referring to FIG. 3F, for example, a transparent electrode 340 is formed on the solar cell layer 330. The transparent electrode may be formed through ITO, SnO 2, or the like, but is not limited thereto. For example, the transparent electrode may be used as an anode.

In addition, if necessary, it is possible to further form a transparent protective film 360 on the transparent electrode 340, which is, for example, to prevent damage or scratches of the solar cell due to external impact, for example, such as adhesive ( It is possible to form the upper portion of the transparent electrode 340 through 350 or the like.

Although a preferred embodiment of the method for manufacturing a thin film silicon solar cell according to the present invention has been described above, the present invention is not limited thereto, and various modifications are made within the scope of the claims and the detailed description of the invention and the accompanying drawings. It is possible to carry out by this and this also belongs to the present invention.

1A to 1F are cross-sectional views illustrating a method of manufacturing a thin film silicon solar cell according to a first embodiment of the present invention.

2 is a plan view illustrating a capping layer of a thin film silicon solar cell applied to the first embodiment of the present invention.

3A to 3F are cross-sectional views illustrating a method of manufacturing a thin film silicon solar cell according to a second embodiment of the present invention.

Claims (16)

(a) forming a seed metal layer on the substrate; (b) forming a capping layer over the seed metal layer and patterning a portion of the seed metal layer to expose; (c) forming a first amorphous silicon layer on the substrate including the patterned capping layer; (d) forming a first polycrystalline silicon layer by crystallization of the first amorphous silicon layer using the exposed seed metal layer as a seed; (e) forming a second amorphous silicon layer on the first polycrystalline silicon layer; And (f) forming a second polycrystalline silicon layer by crystallizing the second amorphous silicon layer using the first polycrystalline silicon layer as a seed. According to claim 1, In the step (b), the capping layer is formed by patterning the seed metal crystallization region having a plurality of openings so as to crystallize the first amorphous silicon layer by using the seed metal layer. Method of manufacture. According to claim 1, The capping layer is a method of manufacturing a thin film silicon solar cell, characterized in that made of any one of the high melting point metal selected from Mo, Cr, Ti or W. According to claim 1, The thickness of the capping layer is a method of manufacturing a thin film silicon solar cell, characterized in that 100 ~ 1㎛. (a ') forming an electrode layer on the substrate; (b ') forming a seed metal layer on the electrode layer and patterning the seed metal layer; (c ') forming a first amorphous silicon layer on the seed metal layer; (d ') forming a first polycrystalline silicon layer by crystallization of the first amorphous silicon layer using the seed metal layer as a seed; (e ') forming a second amorphous silicon layer on the first polycrystalline silicon layer; And (f ') forming a second polycrystalline silicon layer by crystallizing the second amorphous silicon layer using the first polycrystalline silicon layer as a seed. 6. The method of claim 5, The electrode layer is a method of manufacturing a thin film silicon solar cell, characterized in that made of any one of the high melting point metal selected from Mo, Cr, Ti or W. 6. The method of claim 5, The electrode layer has a thickness of 100 kHz to 1 ㎛ manufacturing method of a thin film silicon solar cell. The method according to claim 1 or 5, The seed metal layer is Ni, Pd, Ag, Au, Al, Sn, Sb, Cu, Co, Tr, Ru, Rh, Cd or Pt manufacturing method of a thin film silicon solar cell, characterized in that made of any one metal. . The method according to claim 1 or 5, The seed metal layer is a method of manufacturing a thin film silicon solar cell, characterized in that the form of a metal thin film or metal powder. The method according to claim 1 or 5, The thickness of the seed metal layer is a manufacturing method of a thin film silicon solar cell, characterized in that 10 to 1000 kPa. The method according to claim 1 or 5, Wherein the first and second amorphous silicon layers are n-type and p-type amorphous silicon layers, respectively. The method according to claim 1 or 5, Wherein the first and second polycrystalline silicon layers are n-type and p-type polycrystalline silicon layers, respectively. The method according to claim 1 or 5, The crystallization is a method of manufacturing a thin film silicon solar cell, characterized in that by heat treatment. The method of claim 13, The heat treatment is a method of manufacturing a thin film silicon solar cell, characterized in that at 300 to 800 ℃. The method according to claim 1 or 5, After step (f) or step (f '), (f-1) / (f'-1) forming a transparent electrode on the second polycrystalline silicon layer; And (f-2) / (f'-2) A method of manufacturing a thin film silicon solar cell, further comprising forming a transparent protective film on the transparent electrode. The method of claim 15, The transparent electrode is a method of manufacturing a thin film silicon solar cell, characterized in that made of SnO2 or ITO.

Images