KR100980329B1 - Apparatus for reference pattern fabrication for the calibration of the infrared tester detecting defect of a substrate, and method for fabrication using the same - Google Patents

Abstract

The present invention relates to a reference pattern manufacturing apparatus for correcting an infrared inspection apparatus for detecting a substrate defect and a manufacturing method using the same, wherein the manufacturing process of the present invention is simple and can facilitate a large area pattern.

The reference pattern manufacturing apparatus for the correction of the infrared inspection apparatus for detecting a substrate defect of the present invention for this purpose, the reference pattern manufacturing apparatus for the correction of the infrared inspection apparatus used for detecting the internal defect of the substrate, the substrate having a light blocking film A substrate stage to be seated, a laser light source for supplying a laser to the light blocking film on the substrate, a laser power controller for stabilizing light from the laser light source, a shutter for intermitting a laser emitted from the laser power controller, and the shutter An optical fiber for transmitting the light passing through the optical fiber, and a processing head for transmitting the light transmitted through the optical fiber to the outside; an X-stage for moving the processing head in a rectangular coordinate direction; an objective lens provided at the lower end of the processing head; Automatic focusing for adjusting the distance between the objective lens and the light shielding film Device.

In addition, the reference pattern manufacturing method for the correction of the infrared inspection apparatus for detecting a substrate defect of the present invention for this purpose, in the reference pattern manufacturing method for the correction of the infrared inspection apparatus used for detecting the internal defect of the silicon substrate, on the silicon substrate Forming a silicon oxide film on the silicon oxide film, forming a light blocking film on the silicon oxide film, irradiating light directly to the light blocking film by a laser drawing method to change physical properties of the light blocking film, and Performing an etching process on the light-blocking film having the change in physical property to remove the light-blocking film not exposed to light.

Direct Laser Writing, Substrate, Silicon, Light Blocker, Etch

Description

A reference pattern manufacturing device for calibrating an infrared inspection device for detecting a defect of a substrate and a manufacturing method using the same.

The present invention relates to a reference pattern manufacturing apparatus for detecting a substrate defect and a manufacturing method using the same, and more particularly, a standard for correcting an infrared inspection apparatus for detecting a substrate defect, which can simplify a large area pattern and can facilitate a large area pattern. A pattern manufacturing apparatus and a manufacturing method using the same.

In general, in order to form a semiconductor device, pure silicon is purified to produce a substrate, and unit processes such as deposition, photography, and etching processes for forming a semiconductor device on the substrate are performed, and electrical inspection is performed to confirm that they are operating normally. In addition, a complicated process such as cutting chips formed on a substrate and assembling them to be applied to various electronic circuit boards should be performed.

In particular, if defects such as particles and scratches are generated on the substrate while the unit processes are performed on the glass or silicon substrate, the unit processes may not be normally performed and defects may occur in the semiconductor device.

Thus, before and after performing unit processes on the substrate, it is checked whether a defect has occurred on the substrate.

As a method for detecting defects in the substrate, a method using an infrared inspection apparatus is used.

The defect detection method using the infrared inspection device is determined by measuring the intensity of light transmitted through the inside of the silicon after irradiating the infrared.

However, if the coordinates of the infrared inspection device are incorrect, the size or position of the false defect is incorrectly determined.

Therefore, in order to accurately correct the coordinates of the infrared inspection apparatus, it is necessary to manufacture a reference pattern having a predetermined interval such that chromium does not transmit, such as chromium, on the substrate through which the infrared ray is transmitted.

As an example of the conventional method of forming a reference pattern, a method of forming a pattern through an E-beam lithography method on a substrate having a chromium layer has been applied, but this method produces a reference pattern having a maximum size of 300 mm. It is difficult to do, and has a disadvantage of high manufacturing cost.

In addition, a technique of manufacturing a photomask and manufacturing a reference pattern by an exposure method using the same has been applied, but this technique has a disadvantage in that the process steps are complicated and high in cost.

In addition, a technique of forming a reference pattern by coating a photoresist by spin coating and then exposing and developing the photoresist has been applied. However, the photoresist is also coated on a 300 mm substrate. This requires a high level of clean room for cleaning after expensive semiconductor fabrication (Fab) process and photoresist pattern formation.

An object of the present invention for solving the problems of the prior art, the reference pattern manufacturing apparatus for the correction of the infrared inspection apparatus for detecting a substrate defect to enable a simple and large area patterning process using a direct laser drawing method And a reference pattern manufacturing method for calibrating an infrared inspection device for detecting a substrate defect.

In addition, the present invention is a reference pattern manufacturing apparatus for the correction of the infrared inspection apparatus for detecting a substrate defect for forming a light blocking pattern directly on the substrate without using a photoresist difficult and relatively complicated process for large area coating; The present invention provides a method of manufacturing a reference pattern for calibrating an infrared inspection device for detecting a substrate defect.

An apparatus of the present invention for solving the above problems is a reference pattern manufacturing apparatus for the correction of an infrared inspection apparatus used for detecting an internal defect of a substrate, the apparatus comprising: a substrate stage on which a substrate having a light blocking film is seated, and light on the substrate; A laser light source for supplying a laser to the blocking film, a laser power controller for stabilizing light from the laser light source, a shutter for intermitting the laser emitted from the laser power controller, an optical fiber for transmitting light passing through the shutter, A processing head which transmits the light transmitted through the optical fiber to the outside; And an X-stage for moving the processing head in a Cartesian coordinate direction, an objective lens provided at the lower end of the processing head, and an automatic focusing device for adjusting the distance between the objective lens and the light blocking film.

Here, the substrate stage may be a Y-stage moving in the Y-axis direction or a rotating stage rotating.

The substrate stage may further include an angle adjusting device.

In addition, the reference pattern manufacturing method for the correction of the infrared inspection apparatus for detecting a substrate defect of the present invention for solving the above problems is a reference pattern manufacturing method for the correction of the infrared inspection apparatus used for detecting the internal defect of the substrate. Forming a light blocking film on the substrate, irradiating light directly to the light blocking film by a laser drawing method to change physical properties of the light blocking film, and etching the light blocking film in which the property change is caused by the light irradiation. Proceeding to remove the light blocking film that is not exposed to light.

In addition, the reference pattern manufacturing method for the correction of the infrared inspection apparatus for detecting a substrate defect of the present invention for solving the above problems, in the reference pattern manufacturing method for the correction of the infrared inspection apparatus used for detecting the internal defect of the silicon substrate, Forming a silicon oxide film on a silicon substrate, forming a light blocking film on the silicon oxide film, irradiating light directly to the light blocking film in a laser drawing manner, and changing physical properties of the light blocking film; And performing an etching process on the light blocking film in which the physical property change is caused by the irradiation to remove the light blocking film not exposed to light.

The present invention has an advantage of improving yield and reducing production cost since the light shielding film can be patterned in a simple process by a laser drawing method without using a photoresist that is difficult to coat a large area and has a relatively complicated process.

In addition, the present invention has the advantage that can be precisely patterned on a large area of the substrate 300mm or more by using a direct laser drawing method can improve the efficiency.

1 is a block diagram of a reference pattern manufacturing apparatus for correcting an infrared inspection apparatus for detecting a substrate defect according to a first embodiment of the present invention, and FIG. 2 is an infrared inspection apparatus for detecting a substrate defect according to a second embodiment of the present invention. A reference pattern manufacturing apparatus configuration diagram for the correction of the present invention relates to a reference pattern manufacturing apparatus for the correction of an infrared inspection apparatus used for detecting an internal defect of a substrate.

Referring to FIG. 1, the substrate stage 1, the laser light source 2, the laser power controller 3, the shutter 4, the processing head 6, the X-stage 9, and the object Lens 7 and autofocusing device 8;

Herein, the substrate stage 1 is a substrate 100 having the light blocking film 200 mounted thereon, and a rotation stage for facilitating a Y-stage or concentric pattern for forming a straight pattern using Cartesian coordinates. One or more selected among (Rotary stage) may be used.

In addition, the substrate stage 1 is provided with a substrate jig 11 to not only fix the substrate on the substrate stage 1, but also adjust the bolt fastening degree for coupling the substrate jig 11 to the substrate stage 1. Through the inclination of the substrate 100 can be finely adjusted.

The lower portion of the substrate stage 1 may further include an angle adjusting device 12 for horizontally aligning the substrate stage 1 with the X-stage 9 described later.

In addition, the angle adjusting device 12 serves as a Y-stage moving in the Y-axis direction to be used for matching the focal point of the objective lens 7 with the rotation axis of the substrate stage 1 used as the rotation stage. Can be.

The laser light source 2 provides an Ar + laser and supplies a laser to the light blocking film 200 on the substrate 100.

The laser power controller stabilizes the intensity of light emitted from the laser light source 2.

Then, the shutter interrupts the laser emitted from the laser power controller 3.

The optical fiber transmits the light passing through the shutter to the processing head 6, and the writing head transmits the light transmitted through the optical fiber 5 to the outside.

Here, a beam splitter 82 is further provided inside the processing head 6 for converting a path of light transmitted through the optical fiber 5.

This beam splitter 82 constitutes an automatic focusing device 8 that is integrally provided with the processing head 6.

That is, the auto focus adjusting device 8 is attached to the processing head 6 to automatically adjust the focus by adjusting the gap between the objective lens 7 and the light blocking film 200.

At this time, the automatic focusing apparatus 8 is provided on the upper part of the processing head 6 to detect the light reflected from the laser diode 81, the beam splitter 82, and the light shielding film 200 and irradiated with the laser light. It consists of a PZT driver 84 which finely drives the detector 83 and the processing head 6 to automatically adjust the focus.

Referring to the operation of the automatic focus control device 8 having such a configuration as follows.

If the autofocus control device 8 uses Astigmatic aberration, the light from the laser diode 81 passes through the beam splitter 81 and the objective lens 7 to the light blocking film 200. After being irradiated, the light reflected by the light blocking film is again incident through a beam splitter to a quadratic photo-diode that is a detector 83.

This method can determine the focus by looking at the shape of the beam incident on the quadrant.

At this time, the laser diode uses light having a relatively long wavelength (600 nm or more) with a small amount of light (0.01 mW to 3 mW) so as not to affect the light blocking film.

If the autofocus control device 8 uses the eccentricity of the light, the light from the laser diode is irradiated to the light blocking film 200 through the beam splitter 82 and the objective lens 7, and then in the light blocking film. The reflected light is again incident through a beam splitter to a position detector, which is a detector 83.

This method can determine the focus according to the position of the light of the laser diode.

In the exemplary embodiment of the present invention, the focus is controlled through a separate laser diode, but the light transmitted from the optical fiber 5 is directly incident on the objective lens 7 or the mirror without using a beam splitter using its own laser light source 1. The light can be incident by using.

Alternatively, a method of automatically adjusting focus through capacitive distance detection may be used.

The X-stage 9 moves the processing head 6 in the Cartesian coordinate direction, and the objective lens 7 is provided at the lower end of the processing head to irradiate the light transmitted through the optical fiber 5 onto the light blocking film 200. do.

The reference pattern manufacturing apparatus for calibrating the infrared inspection apparatus for detecting a substrate defect of the present invention loads the substrate 100 on which the light blocking film 200 is formed on the substrate stage 1, and then receives light through the laser light source 2. It exits and forms a predetermined pattern on the light shielding film 200 by a direct laser writing method.

Referring to the method of manufacturing a reference pattern for the correction of the infrared inspection apparatus for detecting a substrate defect of the present invention for this purpose is as follows.

3A and 3B are cross-sectional views illustrating a method of manufacturing a reference pattern for correcting an infrared inspection apparatus for detecting a substrate defect according to a first embodiment of the present invention.

Referring to FIG. 3A, a light blocking film 200 made of chromium is formed on the glass substrate 100.

The light blocking film 200 is directly irradiated with a laser drawing method to change physical properties of the light blocking film 200.

In this case, when the linear patterning is performed, the laser beam is irradiated to the light blocking film 200 in a straight line through the X-stage 9 and the substrate stage 1 of FIG. In the case of patterning, patterning is performed by driving a rotating stage.

Subsequently, by performing an etching process on the light blocking film 200 in which the property change is caused by light irradiation, the light blocking film 200 which is not exposed to light is removed to form the light blocking film pattern 200a as shown in FIG. 3B. do.

Here, the etching process may be used by mixing 25% aqueous solution of K ₃ Fe (CN) _{6 and} 25% aqueous solution of NaOH in a ratio of 4: 1 to 8: 1, preferably 6: 1.

In addition, the etching process may be performed by shaking the etchant at room temperature. If the chromium is formed to a thickness of 70 nm, the etching process may be performed for about 1 minute, and if the thickness is 500 nm, the etching process may be performed for about 9 minutes. To perform. In this case, if the etching solution is not shaken, the etching time is performed more than twice.

4A and 4B are cross-sectional views illustrating a case where a method of manufacturing a reference pattern for calibrating an infrared inspection apparatus for detecting a substrate defect according to a first embodiment of the present invention is applied to a silicon substrate.

Referring to FIG. 4A, light is irradiated directly onto the light blocking film 200 on the silicon substrate 100a by using a laser drawing method to change physical properties of the light blocking film 200.

Then, an etching process using an etchant in which a 25% aqueous solution of K ₃ Fe (CN) _{6 and a} 25% aqueous solution of NaOH is mixed at a ratio of 4: 1 to 8: 1, preferably 6: 1, is shown in FIG. 4B. As described above, the damage site D is formed on the silicon substrate 100a.

That is, the etching solution for dissolving the chromium film, which is the light blocking film, is acid-based, and since the silicon is well dissolved in the acid, the silicon substrate 200 may be damaged.

In order to prevent this, in the second embodiment of the present invention, as shown in FIG. 5A, a silicon oxide film (SiO ₂ ; 300) is coated on the silicon substrate 100a by about 50 to 400 nm, and then a light blocking film is formed thereon. 200).

Then, the light is directly irradiated to the light blocking film 200 on the silicon substrate 100a by laser drawing to change the physical properties of the light blocking film 200.

Subsequently, the light blocking film is etched using an etchant in which a 10 to 40% aqueous solution of K ₃ Fe (CN) _{6 and a} 10 to 40% aqueous solution of NaOH are mixed at a ratio of 4: 1 to 8: 1, preferably at a ratio of 6: 1. The pattern 200a is formed.

That is, the silicon oxide film 300 is coated on the silicon substrate 100a so that the silicon oxide film 300 serves as an etch protection film for the silicon substrate 100a.

Accordingly, the desired light blocking film pattern can be formed without damaging the silicon substrate 100a, and since the silicon oxide film passes the infrared rays well, it does not affect the correction of the infrared inspection device.

FIG. 6 is a photograph of a measurement result of a process result according to a second exemplary embodiment of the present invention. As a result of manufacturing a button-shaped pattern on a silicon substrate and measuring with a white light scanning interferometer, a light blocking pattern made of chromium and silicon are completely absent. You can see it is patterned without damage.

As described above, in the method of manufacturing a reference pattern for calibrating an infrared inspection apparatus for detecting a defect of a substrate according to the first and second embodiments of the present invention, the patterning method using a conventional photoresist is exposed and developed, and the cleaning process accompanying it. Compared to the process, the process step can be formed simply and precisely patterning.

1 is a block diagram of a reference pattern manufacturing apparatus for the correction of the infrared inspection device for detecting a substrate defect according to the first embodiment of the present invention.

2 is a block diagram of a reference pattern manufacturing apparatus for correcting an infrared inspection apparatus for detecting a substrate defect according to a second embodiment of the present invention.

3A and 3B are cross-sectional views illustrating a method of manufacturing a reference pattern for correcting an infrared inspection device for detecting a substrate defect according to a first embodiment of the present invention.

4A and 4B are cross-sectional views illustrating a case where a method of manufacturing a reference pattern for correcting an infrared inspection apparatus for detecting a substrate defect according to a first embodiment of the present invention is applied to a silicon substrate;

5A and 5B are cross-sectional views illustrating a method of manufacturing a reference pattern for correction of an infrared inspection device for detecting a substrate defect according to a second embodiment of the present invention.

Figure 6 is a photograph of the measurement results of the process product according to the second embodiment of the present invention.

<Description of the symbols for the main parts of the drawings>

1: substrate stage

11: Jig for Board

12: angle adjusting device

2: laser light source

3: laser power controller

4: Shutter

5: optical fiber

6: machining head

7: objective lens

8: automatic focusing device

81: laser diode

82: beam splitter

83: detector

84: PZT Driver

9: X-stage

100: glass substrate

100a: silicon substrate

200: light blocking film

300 silicon oxide film

Claims (8)

In the reference pattern manufacturing apparatus for the correction of the infrared inspection apparatus used for detecting the internal defect of the substrate, A substrate stage 1 on which a substrate having a light blocking film is seated; A laser light source 2 for supplying a laser to the light blocking film on the substrate; A laser power controller (3) for stabilizing light from the laser light source; A shutter 4 intermittent with the laser emitted from the laser power controller; An optical fiber 5 for transmitting the light passing through the shutter; A processing head 6 which transmits the light transmitted through the optical fiber to the outside; An X-stage 9 for moving the machining head in a rectangular coordinate direction; An objective lens 7 provided at a lower end of the processing head; And And an automatic focusing device (8) for adjusting the gap between the objective lens and the light blocking film. The method of claim 1, The substrate stage (1); A reference pattern manufacturing apparatus for calibrating an infrared inspection device for detecting a substrate defect, characterized in that the Y-stage moving in the Y-axis direction or the rotating stage rotating. 3. The method of claim 2, The substrate stage (1); An apparatus for producing a reference pattern for correction of an infrared inspection device for detecting a substrate defect, further comprising an angle adjusting device (12). In the reference pattern manufacturing method for the correction of the infrared inspection device used for detecting the internal defect of the glass substrate, Forming a light blocking film on the glass substrate; Irradiating light directly to the light blocking film by laser drawing to change physical properties of the light blocking film; Manufacturing a reference pattern for calibrating an infrared inspection device for detecting a defect of a substrate, comprising: performing an etching process on the light blocking film having a change in physical property caused by light irradiation to remove the light blocking film not exposed to light. Way. In the method of manufacturing a reference pattern for the correction of the infrared inspection device used to detect the internal defect of the silicon substrate, Forming a silicon oxide film on the silicon substrate; Forming a light blocking film on the silicon oxide film; Irradiating light directly to the light blocking film by laser drawing to change physical properties of the light blocking film; Manufacturing a reference pattern for calibrating an infrared inspection device for detecting a defect of a substrate, comprising: performing an etching process on the light blocking film having a change in physical property caused by light irradiation to remove the light blocking film not exposed to light. Way. The method according to claim 4 or 5, The etching process is a reference pattern manufacturing method for the correction of the infrared inspection apparatus for detecting a substrate defect, characterized in that the mixture is carried out by mixing a K ₃ Fe (CN) ₆ aqueous solution and a NaOH aqueous solution. The method of claim 6, The K ₃ Fe (CN) ₆ aqueous solution and NaOH aqueous solution is a reference pattern manufacturing method for the correction of the infrared inspection apparatus for detecting a substrate defect, characterized in that the mixture is used in a ratio of 4: 1 to 8: 1. The method of claim 7, wherein The K ₃ Fe (CN) ₆ aqueous solution has a K ₃ Fe (CN) ₆ content of 25%, NaOH aqueous solution is a reference pattern for the calibration of the infrared inspection apparatus for detecting a substrate defect, characterized in that the NaOH content of 25% Way.

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