KR100960280B1 - Iii-nitride semiconductor light emitting device - Google Patents

Iii-nitride semiconductor light emitting device Download PDF

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Publication number
KR100960280B1
KR100960280B1 KR20080121156A KR20080121156A KR100960280B1 KR 100960280 B1 KR100960280 B1 KR 100960280B1 KR 20080121156 A KR20080121156 A KR 20080121156A KR 20080121156 A KR20080121156 A KR 20080121156A KR 100960280 B1 KR100960280 B1 KR 100960280B1
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South Korea
Prior art keywords
nitride semiconductor
group iii
iii nitride
pad
bonding pad
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KR20080121156A
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Korean (ko)
Inventor
김창태
김현석
안현수
Original Assignee
주식회사 에피밸리
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Priority to KR20080121156A priority Critical patent/KR100960280B1/en
Priority claimed from US12/648,707 external-priority patent/US8101965B2/en
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Publication of KR100960280B1 publication Critical patent/KR100960280B1/en

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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40Materials therefor
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26Materials of the light emitting region
    • H01L33/30Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

The present disclosure relates to a group III nitride semiconductor light emitting device, and more particularly, to a first group III nitride semiconductor layer having a first conductivity, a second group III nitride semiconductor layer having a second conductivity different from the first conductivity, and a first A plurality of group III nitride semiconductor layers positioned between the group III nitride semiconductor layers and the second group III nitride semiconductor layers and having an active layer generating light by recombination of electrons and holes; Bonding pads electrically connected to the plurality of Group III nitride semiconductor layers; A protective film on the bonding pads; And a buffer pad positioned between the bonding pad and the passivation layer, the buffer pad being exposed to expose the bonding pad.

Description

Group III nitride semiconductor light emitting device {III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE}

The present disclosure generally relates to a group III nitride semiconductor light emitting device, and more particularly, to a group III nitride semiconductor light emitting device capable of improving the loss of a protective film on the bonding pad side.

Here, the group III nitride semiconductor light emitting device has a compound semiconductor layer of Al (x) Ga (y) In (1-xy) N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). Means a light emitting device, such as a light emitting diode comprising a, and does not exclude the inclusion of a material consisting of elements of other groups such as SiC, SiN, SiCN, CN or a semiconductor layer of these materials.

This section provides backgound information related to the present disclosure which is not necessarily prior art.

1 is a view illustrating an example of a conventional Group III nitride semiconductor light emitting device, wherein the Group III nitride semiconductor light emitting device is grown on the substrate 100, the buffer layer 200 grown on the substrate 100, and the buffer layer 200. n-type group III nitride semiconductor layer 300, an active layer 400 grown on the n-type group III nitride semiconductor layer 300, p-type group III nitride semiconductor layer 500, p-type 3 grown on the active layer 400 The p-side electrode 600 formed on the group nitride semiconductor layer 500, the p-side bonding pad 700 formed on the p-side electrode 600, the p-type group III nitride semiconductor layer 500 and the active layer 400 are formed. The n-side electrode 800 and the passivation layer 900 are formed on the n-type group III nitride semiconductor layer 300 exposed by mesa etching.

As the substrate 100, a GaN-based substrate is used as the homogeneous substrate, and a sapphire substrate, a SiC substrate, or a Si substrate is used as the heterogeneous substrate. Any substrate may be used as long as the group III nitride semiconductor layer can be grown. When a SiC substrate is used, the n-side electrode 800 may be formed on the SiC substrate side.

Group III nitride semiconductor layers grown on the substrate 100 are mainly grown by MOCVD (organic metal vapor growth method).

The buffer layer 200 is intended to overcome the difference in lattice constant and thermal expansion coefficient between the dissimilar substrate 100 and the group III nitride semiconductor, and US Pat. A technique for growing an AlN buffer layer having a thickness of US Pat. No. 5,290,393 describes Al (x) Ga (1-x) N having a thickness of 10 kPa to 5000 kPa at a temperature of 200 to 900 C on a sapphire substrate. (0 ≦ x <1) A technique for growing a buffer layer is described, and US Patent Publication No. 2006/154454 discloses growing a SiC buffer layer (seed layer) at a temperature of 600 ° C. to 990 ° C., followed by In (x Techniques for growing a Ga (1-x) N (0 <x≤1) layer are described. Preferably, the undoped GaN layer is grown prior to the growth of the n-type group III nitride semiconductor layer 300, which may be viewed as part of the buffer layer 200 or as part of the n-type group III nitride semiconductor layer 300. good.

In the n-type group III nitride semiconductor layer 300, at least a region (n-type contact layer) in which the n-side electrode 800 is formed is doped with impurities, and the n-type contact layer is preferably made of GaN and doped with Si. . U. S. Patent No. 5,733, 796 describes a technique for doping an n-type contact layer to a desired doping concentration by controlling the mixing ratio of Si and other source materials.

The active layer 400 is a layer that generates photons (light) through recombination of electrons and holes, and is mainly composed of In (x) Ga (1-x) N (0 <x≤1), and one quantum well layer (single quantum wells) or multiple quantum wells.

The p-type III-nitride semiconductor layer 500 is doped with an appropriate impurity such as Mg, and has an p-type conductivity through an activation process. U.S. Patent No. 5,247,533 describes a technique for activating a p-type group III nitride semiconductor layer by electron beam irradiation, and U.S. Patent No. 5,306,662 annealing at a temperature of 400 DEG C or higher to provide a p-type group III nitride semiconductor layer. A technique for activating is described, and US Patent Publication No. 2006/157714 discloses a p-type III-nitride semiconductor layer without an activation process by using ammonia and a hydrazine-based source material together as a nitrogen precursor for growing the p-type III-nitride semiconductor layer. Techniques for having this p-type conductivity have been described.

The p-side electrode 600 is provided to provide a good current to the entire p-type group III nitride semiconductor layer 500. US Patent No. 5,563,422 is formed over almost the entire surface of the p-type group III nitride semiconductor layer. And a light-transmitting electrode made of Ni and Au in ohmic contact with the p-type III-nitride semiconductor layer 500 and described in US Patent No. 6,515,306 on the p-type III-nitride semiconductor layer. A technique has been described in which an n-type superlattice layer is formed and then a translucent electrode made of indium tin oxide (ITO) is formed thereon.

On the other hand, the p-side electrode 600 may be formed to have a thick thickness so as not to transmit light, that is, to reflect the light toward the substrate side, this technique is referred to as flip chip (flip chip) technology. U. S. Patent No. 6,194, 743 describes a technique relating to an electrode structure including an Ag layer having a thickness of 20 nm or more, a diffusion barrier layer covering the Ag layer, and a bonding layer made of Au and Al covering the diffusion barrier layer.

The p-side bonding pad 700 and the n-side electrode 800 are for supplying current and wire bonding to the outside, and US Patent No. 5,563,422 describes a technique in which the n-side electrode is composed of Ti and Al.

The protective film 900 is formed of a material such as silicon dioxide. U. S. Patent No. 5,563, 422 discloses a technique of forming a protective film having light transmissivity and insulation between the p-side bonding pad and the n-side electrode or on the upper surface of the light emitting device except for the wire bonding portion of the p-side bonding pad and the n-side electrode. It is described.

Meanwhile, the n-type III-nitride semiconductor layer 300 or the p-type III-nitride semiconductor layer 500 may be composed of a single layer or a plurality of layers, and recently, the substrate 100 may be formed by laser or wet etching. A technique for manufacturing a vertical light emitting device by separating the from Group III nitride semiconductor layers has been introduced.

FIG. 2 is a photograph showing an example of a bonding pad side protective film of a conventional Group III nitride semiconductor light emitting device. The p-side bonding pad 700 and the protective film 900 may not be easily adhered, and thus the protective film 900 may be easily broken or peeled off. (A) can be seen. This is a problem that may cause a poor connection between the bonding pad 700 and the wire when bonding the bonding pad 700 to make a package.

This will be described later in the Specification for Implementation of the Invention.

SUMMARY OF THE INVENTION Herein, a general summary of the present disclosure is provided, which should not be construed as limiting the scope of the present disclosure. of its features).

According to one aspect of the present disclosure, According to one aspect of the present disclosure, a first group III nitride semiconductor layer having a first conductivity, a second group III nitride semiconductor layer having a second conductivity different from the first conductivity, A plurality of Group III nitride semiconductor layers disposed between the first Group III nitride semiconductor layer and the second Group III nitride semiconductor layer and having an active layer that generates light by recombination of electrons and holes; Bonding pads electrically connected to the plurality of Group III nitride semiconductor layers; A protective film on the bonding pads; And a buffer pad positioned between the bonding pad and the passivation layer, the buffer pad being exposed to expose the bonding pad.

This will be described later in the Specification for Implementation of the Invention.

The present disclosure will now be described in detail with reference to the accompanying drawing (s).

3 is a diagram illustrating an example of a group III nitride semiconductor light emitting device according to the present disclosure, in which the group III nitride semiconductor light emitting device is disposed on a substrate 10, a buffer layer 20, and a buffer layer 20 grown on the substrate 10. P-type grown on the n-type III-nitride semiconductor layer 30, the n-type III-nitride semiconductor layer 30 to be grown and generates light by recombination of electrons and holes, and p-grown on the active layer 40 P-type electrode 60 formed on p-type group III nitride semiconductor layer 50, p-type group III nitride semiconductor layer 50, p-side bonding pad 70 formed on p-side electrode 60, at least p-type The n-side electrode 80, the p-side bonding pad 70, and the n-side electrode formed on the n-type Group III nitride semiconductor layer 30 where the Group III nitride semiconductor layer 50 and the active layer 40 are etched and exposed. Buffer pads 78 and 88 formed on the upper portion 80 and a passivation layer 90 formed on the light emitting device. Here, the n-side electrode 80 not only supplies electricity to the n-type group III nitride semiconductor layer 30 but also serves as a bonding pad for wire bonding.

The protective film 90 may be formed of an oxide film. For example, the protective film 90 may be made of SiO 2 , TiO 2 , Al 2 O 3 as an oxide film.

The p-side bonding pad 70 is for connection and wire bonding with the p-side electrode 60. For example, the Cr layer 72, the Ni layer 74, and the Au layer are sequentially formed on the p-side electrode 60. 76 can be made.

The buffer pad 78 is formed on the p-side bonding pad 70 to overcome the low adhesion between the p-side bonding pad 70 and the passivation layer 90, and the p-side bonding pad 70 and the passivation layer ( 90) is made of a material that can be bonded or bonded. This means that when the p-side bonding pad 70 is made of metal and the protective film 90 is made of an oxide film, the buffer pad 78 may be made of an oxidizable metal. For example, when the upper surface of the p-side bonding pad 70 is made of the Au layer 76 and the protective film 90 is made of SiO 2 , the buffer pad 78 is capable of good adhesion not only with Au but also with SiO 2. As an oxidizable metal, which may be made of Ni or Cr.

On the other hand, the buffer pad 78 is annular so that the center portion 70c of the p-side bonding pad 70 is exposed for bonding between the p-side bonding pad 70 and the wire. The buffer pad 78 is preferably formed at the outer periphery of the upper surface of the p-side bonding pad 70 so as to secure the maximum area for bonding between the p-side bonding pad 70 and the wire.

The n-side electrode 80 is for connection and wire bonding with the n-type Group III nitride semiconductor layer 30. For example, the Cr layer 82 and Ni are sequentially formed on the n-type Group III nitride semiconductor layer 30. The layer 84 and the Au layer 86 may be formed. In this case, the buffer pad 88 formed on the n-side electrode 80 may be formed in the same configuration as the buffer pad 78 formed on the p-side bonding pad 70, and description thereof will be omitted.

The passivation layer 90 is formed on the buffer pads 78 and 88, and the p-side bonding pad exposed by the buffer pad 78 for wire bonding to the p-side bonding pad 70 and the n-side electrode 80. 70 and the light emitting element except for the n-side electrode 80 exposed by the buffer pad 88.

Hereinafter, a method of manufacturing a group III nitride semiconductor light emitting device according to the present disclosure will be described in detail.

4 is a diagram illustrating an example of a method of manufacturing a group III nitride semiconductor light emitting device according to the present disclosure.

First, a plurality of group III nitride semiconductor layers 20, 30, 40, and 50 are grown on the substrate 10 (see FIG. 4A).

Next, the p-type III-nitride semiconductor layer 50 and the active layer 40 are etched to expose the n-type III-nitride semiconductor layer 30 (see FIG. 4B).

Next, the p-side electrode 60 is formed (see FIG. 4B). Formation of the p-side electrode 60 may be formed over the entire upper surface of the p-type group III nitride semiconductor layer 50, and may be formed in part. The p-side electrode 60 may be formed before etching the p-type group III nitride semiconductor layer 50 and the active layer 40.

Next, the p-side bonding pad 70 and the n-side electrode 80 are formed (see FIG. 4C). Here, the p-side bonding pad 70 and the n-side electrode 80 may be formed through separate processes, respectively. The p-side electrode 60 may be formed before etching the p-type group III nitride semiconductor layer 50 and the active layer 40 in a separate process. The p-side bonding pad 70 may be formed to have a thickness of 1 μm to 2 μm by sequentially stacking Cr, Ni, and Au layers on the p-side electrode 60 using, for example, electron beam deposition. The n-side electrode 80 may be formed in the same manner.

Next, a buffer pad 78 is formed on the p-side bonding pad 70 (see FIG. 4D). For example, the buffer pad 78 may be formed of a Ni layer having a thickness of 10 μs to 200 μs on the p-side bonding pad 70 by using an electron beam deposition method. The buffer pad 88 may be formed in the same manner.

Next, the protective film 90 is formed. For example, the protective film 90 may be made of SiO 2 , TiO 2 , Al 2 O 3 (see (d) of FIG. 4).

Next, a part of the passivation film 90 positioned on the upper surfaces of the buffer pads 78 and 88 is removed (see FIG. 4E). Removal of the passivation layer 90 may be performed by dry etching or wet etching. For example, when the protective film 90 is made of SiO 2 , dry etching is performed for about 250 seconds using a gas containing CF 4 , or wet etching is performed for 1 to 2 minutes using a solution containing HF. Can be removed.

Next, the protective film 90 is removed to remove the exposed buffer pads 78 and 88 (see FIG. 4F). Removal of the exposed buffer pads 78, 88 may be accomplished by wet etching. For example, the exposed buffer pads 78 and 88 may be removed by wet etching a solution containing HCl for several tens of seconds when the Ni layer is formed.

Next, annealing is performed. For example, annealing can take place at 425 ° C. for about 1 minute.

FIG. 5 is a photograph showing an example of a bonding pad side protective film of a group III nitride semiconductor light emitting device according to the present disclosure, and the p-side bonding pad 70 having a central portion exposed by the buffer pad 78 may be viewed, and a buffer It can be seen that the peeling of the protective film 90 formed on the pad 78 is improved.

Various embodiments of the present disclosure will be described below.

(1) A group III nitride semiconductor light emitting element comprising a buffer pad between the protective film and the bonding pad. Thereby, the adhesion failure between the bonding pad and the protective film can be improved.

(2) A group III nitride semiconductor light emitting element comprising a band pad on a bonding pad. Thereby, wire bonding can be performed to a bonding pad.

(3) A group III nitride semiconductor light emitting element comprising an oxidizable metal layer between the bonding pad and the protective film. Thereby, the adhesion between the bonding pad made of the metal layer and the protective film made of the oxide film can be improved.

(4) A group III nitride semiconductor light emitting element comprising a Ni layer between the bonding pad and the protective film. Thereby, adhesion of the bonding pad which consists of a metal layer, and the protective film which consists of silicon dioxide can be improved.

(5) A group III nitride semiconductor light emitting element comprising a Cr layer between the bonding pads and the protective film. Thereby, adhesion of the bonding pad which consists of a metal layer, and the protective film which consists of silicon dioxide can be improved.

According to one group III nitride semiconductor light emitting device according to the present disclosure, the adhesion between the bonding pad and the protective film can be improved.

According to another group III nitride semiconductor light emitting device according to the present disclosure, the bonding between the bonding pad and the protective film can be improved while wire bonding to the bonding pad.

1 is a view showing an example of a conventional group III nitride semiconductor light emitting device,

2 is a photograph showing an example of a bonding pad side protective film of a conventional Group III nitride semiconductor light emitting device;

3 is a view showing an example of a group III nitride semiconductor light emitting device according to the present disclosure;

4 is a view showing an example in a method of manufacturing a group III nitride semiconductor light emitting device according to the present disclosure;

5 is a photograph showing an example of a bonding pad side protective film of a group III nitride semiconductor light emitting device according to the present disclosure;

Claims (6)

  1. A first group III nitride semiconductor layer having a first conductivity, a second group III nitride semiconductor layer having a second conductivity different from the first conductivity, and located between the first group III nitride semiconductor layer and the second group III nitride semiconductor layer A plurality of group III nitride semiconductor layers including an active layer that generates light by recombination of electrons and holes;
    Bonding pads electrically connected to the plurality of Group III nitride semiconductor layers;
    A protective film on the bonding pads; And,
    And a buffer pad positioned between the bonding pad and the passivation layer, the buffer pad being exposed to expose the bonding pad.
  2. In claim 1,
    The protective film is made of an oxide film,
    A group III nitride semiconductor light emitting device, characterized in that the buffer pad is an oxidizable metal.
  3. In claim 1,
    The protective film is made of SiO 2 ,
    Bonding pad is made of Au on the top surface,
    The group III nitride semiconductor light emitting device, characterized in that the buffer pad is made of Ni or Cr.
  4. In claim 1,
    A group III nitride semiconductor light emitting device, characterized in that the buffer pad is formed in an annular shape.
  5. In claim 1,
    The plurality of Group III nitride semiconductor layers are etched with at least a second Group III nitride semiconductor layer and an active layer so that the first Group III nitride semiconductor layer is exposed,
    The bonding pad includes a first bonding pad electrically connected to the first group III nitride semiconductor layer, and a second bonding pad electrically connected to the second group III nitride semiconductor layer.
    The buffer pad is bonded to the passivation layer and the bonding pad, and is formed in a band shape on the second bonding pad so that the first buffer pad is formed in a band shape on the first bonding pad to expose the first bonding pad, and the second bonding pad is exposed. Having a second buffer pad,
    The passivation layer is formed to cover the upper portion of the light emitting device, and the upper side of the first bonding pad exposed by the first buffer pad and the second bonding pad exposed by the second buffer pad is opened to open the first buffer pad and the second buffer. Group III nitride semiconductor light emitting device, characterized in that formed on the pad.
  6. In claim 5,
    The protective film is made of SiO 2 ,
    Bonding pad is made of Au on the top,
    The group III nitride semiconductor light emitting device, characterized in that the buffer pad is made of Ni or Cr.
KR20080121156A 2008-12-02 2008-12-02 Iii-nitride semiconductor light emitting device KR100960280B1 (en)

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Application Number Priority Date Filing Date Title
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Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
KR20080121156A KR100960280B1 (en) 2008-12-02 2008-12-02 Iii-nitride semiconductor light emitting device
JP2011539449A JP2012510724A (en) 2008-12-02 2009-12-02 Group 3 nitride semiconductor light emitting device
PCT/KR2009/007169 WO2010064848A2 (en) 2008-12-02 2009-12-02 Group iii nitride semiconductor light-emitting device
CN200980148569XA CN102239575A (en) 2008-12-02 2009-12-02 Group iii nitride semiconductor light-emitting device
US12/648,707 US8101965B2 (en) 2008-12-02 2009-12-29 III-nitride semiconductor light emitting device having a multilayered pad

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WO (1) WO2010064848A2 (en)

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CN106415859A (en) * 2014-06-03 2017-02-15 世迈克琉明有限公司 Semiconductor light emitting device and method for manufacturing same

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JP2014165337A (en) 2013-02-25 2014-09-08 Rohm Co Ltd Light-emitting element, light-emitting element package, and method of manufacturing light-emitting element
CN103367590A (en) * 2013-07-08 2013-10-23 安徽三安光电有限公司 Gallium nitride-based light-emitting diode and production method thereof

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