KR100932140B1 - 성막 장치에서의 기판 장착 방법 및 성막 방법 - Google Patents

성막 장치에서의 기판 장착 방법 및 성막 방법 Download PDF

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Publication number
KR100932140B1
KR100932140B1 KR1020077016151A KR20077016151A KR100932140B1 KR 100932140 B1 KR100932140 B1 KR 100932140B1 KR 1020077016151 A KR1020077016151 A KR 1020077016151A KR 20077016151 A KR20077016151 A KR 20077016151A KR 100932140 B1 KR100932140 B1 KR 100932140B1
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South Korea
Prior art keywords
substrate
mask
chuck
film
forming apparatus
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Expired - Fee Related
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KR1020077016151A
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English (en)
Korean (ko)
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KR20070087080A (ko
Inventor
다쓰야 가타오카
겐지 나가오
겐이치 사이토
Original Assignee
미쯔이 죠센 가부시키가이샤
조슈 인더스트리 컴파니 리미티드
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Publication of KR20070087080A publication Critical patent/KR20070087080A/ko
Application granted granted Critical
Publication of KR100932140B1 publication Critical patent/KR100932140B1/ko
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
KR1020077016151A 2005-02-23 2006-02-22 성막 장치에서의 기판 장착 방법 및 성막 방법 Expired - Fee Related KR100932140B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005047815A JP4609757B2 (ja) 2005-02-23 2005-02-23 成膜装置における基板装着方法
JPJP-P-2005-00047815 2005-02-23
PCT/JP2006/303191 WO2006090749A1 (ja) 2005-02-23 2006-02-22 成膜装置における基板装着方法および成膜方法

Publications (2)

Publication Number Publication Date
KR20070087080A KR20070087080A (ko) 2007-08-27
KR100932140B1 true KR100932140B1 (ko) 2009-12-16

Family

ID=36927387

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077016151A Expired - Fee Related KR100932140B1 (ko) 2005-02-23 2006-02-22 성막 장치에서의 기판 장착 방법 및 성막 방법

Country Status (5)

Country Link
JP (1) JP4609757B2 (https=)
KR (1) KR100932140B1 (https=)
CN (1) CN101090996B (https=)
TW (1) TW200632117A (https=)
WO (1) WO2006090749A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5080587B2 (ja) * 2008-04-09 2012-11-21 株式会社アルバック 蒸発源及び成膜装置
WO2010106958A1 (ja) * 2009-03-18 2010-09-23 株式会社アルバック 位置合わせ方法、蒸着方法
DE102009034532A1 (de) * 2009-07-23 2011-02-03 Msg Lithoglas Ag Verfahren zum Herstellen einer strukturierten Beschichtung auf einem Substrat, beschichtetes Substrat sowie Halbzeug mit einem beschichteten Substrat
TWI598377B (zh) 2015-08-20 2017-09-11 大連化學工業股份有限公司 聚碳酸酯二醇及使用該聚碳酸酯二醇製得之熱塑性聚氨酯
CN105762278B (zh) * 2016-03-04 2018-05-01 苏州大学 一种真空蒸镀装置及利用其制备有机电致发光器件的方法
JP6876520B2 (ja) * 2016-06-24 2021-05-26 キヤノントッキ株式会社 基板の挟持方法、基板の挟持装置、成膜方法、成膜装置、及び電子デバイスの製造方法、基板載置方法、アライメント方法、基板載置装置
WO2018211703A1 (ja) * 2017-05-19 2018-11-22 シャープ株式会社 蒸着方法、蒸着装置、ｅｌデバイスの製造装置、及びｅｌデバイスの製造方法
JP6468540B2 (ja) * 2017-05-22 2019-02-13 キヤノントッキ株式会社 基板搬送機構、基板載置機構、成膜装置及びそれらの方法
JP7374684B2 (ja) * 2019-09-24 2023-11-07 キヤノントッキ株式会社 成膜装置および成膜方法、情報取得装置、アライメント方法、ならびに電子デバイスの製造装置および製造方法
JP2024037209A (ja) * 2022-09-07 2024-03-19 キヤノントッキ株式会社 成膜装置、成膜装置の駆動方法及び成膜方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH051375A (ja) * 1991-06-25 1993-01-08 Canon Inc 真空処理装置
JP3516346B2 (ja) * 1992-09-08 2004-04-05 大日本印刷株式会社 スパッタ用治具
JPH1046339A (ja) * 1996-07-29 1998-02-17 Matsushita Electric Ind Co Ltd 基板ハンドリング方法
JP2004183044A (ja) * 2002-12-03 2004-07-02 Seiko Epson Corp マスク蒸着方法及び装置、マスク及びマスクの製造方法、表示パネル製造装置、表示パネル並びに電子機器
JP2004303559A (ja) * 2003-03-31 2004-10-28 Tohoku Pioneer Corp アライメント装置及び方法、並びにこれを用いて製造される有機ｅｌ素子

Also Published As

Publication number Publication date
TW200632117A (en) 2006-09-16
JP2006233259A (ja) 2006-09-07
JP4609757B2 (ja) 2011-01-12
CN101090996A (zh) 2007-12-19
TWI316968B (https=) 2009-11-11
CN101090996B (zh) 2010-05-26
KR20070087080A (ko) 2007-08-27
WO2006090749A1 (ja) 2006-08-31

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