KR100900904B1 - METHOD FOR MANUFACTURING HYDROGEN SENSOR USING Pd-Ni ALLOY THIN FILM AND HYDROGEN SENSOR MANUFACTURED BY THE METHOD - Google Patents

Abstract

According to the present invention, a method of manufacturing a hydrogen sensor using a Pd-Ni alloy thin film is disclosed. The method includes the steps of (a) applying a resin layer on a substrate, and then forming a sensor pattern; (b) depositing a Pd-Ni alloy on which a relative ratio of Pd and Ni is controlled while controlling the deposition rates of Pd and Ni on the substrate on which the sensor pattern is formed; (c) removing the resin layer to form a Pd-Ni alloy sensor of the sensor pattern on the substrate; (d) applying a resin layer on the substrate on which the Pd-Ni alloy sensor is formed, and then forming an electrode pattern at a predetermined position between both ends of the Pd-Ni alloy sensor; (e) depositing a conductive metal on the resin layer; (f) removing the resin layer to form an electrode of the electrode pattern electrically connected to the Pd-Ni alloy sensor.

Description

TECHNICAL FIELD OF THE INVENTION A hydrogen sensor manufacturing method using a palladium-nickel alloy thin film and a hydrogen sensor manufactured using the method.

The present invention relates to a method for manufacturing a hydrogen sensor using a Pd-Ni alloy thin film, and more specifically, to manufacturing a small high-speed hydrogen detection sensor using a Pd-Ni thin film manufactured by co-sputtering. Is about how to

Recently, many alternative energies have been studied to solve the environmental problems such as global warming due to the use of fossil fuels and energy shortages due to the depletion of fossil fuels, and among them, research on hydrogen energy has been accelerated.

Hydrogen energy has the advantage that it can solve both of the above problems, and hydrogen is not only energy from abundantly distributed water on the earth, but also as an energy source that can be recycled back to water, There are also advantages in overcoming the finiteness of fossil resources. Moreover, hydrogen does not produce pollutants except for very small amounts of NO _x in its use. Therefore, the development of hydrogen energy is being accelerated in order to simultaneously solve the depletion of energy resources and environmental pollution that human beings face. Accordingly, the widespread use of hydrogen energy, which has been used mainly by experts, is expected.

However, if hydrogen gas leaks more than 4% in the atmosphere, there is a risk of explosion. Therefore, it is difficult to apply it as a hydrogen energy source for hydrogen fuel cell vehicles or the like unless reliable and stable management is secured. Therefore, there is a need to develop a hydrogen gas detection sensor capable of detecting leaked hydrogen early as a part to be secured along with the development of hydrogen energy.

To date, as a hydrogen sensor, a Schottky barrier diode of a bipolar structure using a catalytic combustion or a heating wire sensor, SiO ₂ , AlN metal oxide (nitride) semiconductor, and SiC or GaN in bulk Pd, Pt Sensors and the like have been developed. However, they are not only large in size, complicated in structure, but also expensive in price, which leads to difficulties in commercialization. In addition, since it operates at a high temperature of more than 300 ℃ has not only a large power consumption, but also a low selectivity for hydrogen, has a limitation such as a long reaction time.

Therefore, researches on hydrogen sensor materials and structures that can optimize their performance are underway, and typical applications include applying nanotechnology to devices and using nanomaterials as sensor materials. Since these nanomaterials are very small in size (several nm to several tens nm), their physical properties due to their surface are maximized, and thus are very advantageous for catalysts and sensor detection materials that act by surface reactions. If the sensor is developed, it is expected that not only the sensor can be miniaturized but also an ultra-sensitivity sensor capable of ultra-low power driving is currently being studied.

Therefore, the present invention has been made to solve the above-mentioned problems of the prior art, by improving the mechanical properties by minimizing the physical change before and after the sensor sensing unit is exposed to hydrogen gas can increase the reproducibility of the reaction and shorten the reaction time It is an object to provide a method of manufacturing a hydrogen sensor using a material.

The present inventors proceed with the research on palladium having excellent adsorption to hydrogen in relation to nanomaterials that can be applied to a hydrogen sensor, while reducing mechanical damage of the material due to physical changes before and after the reaction between hydrogen and palladium, and reaction time. Studying a palladium-based alloy that can shorten the, and applied to complete the present invention.

In order to achieve the above object, according to the present invention, there is provided a method for producing a hydrogen sensor using a Pd-Ni alloy thin film, the method comprising the steps of (a) after applying a resin layer on a substrate, forming a sensor pattern Wow; (b) depositing a Pd-Ni alloy on which a relative ratio of Pd and Ni is controlled while controlling the deposition rates of Pd and Ni on the substrate on which the sensor pattern is formed; (c) removing the resin layer to form a Pd-Ni alloy sensor of the sensor pattern on the substrate; (d) applying a resin layer on the substrate on which the Pd-Ni alloy sensor is formed, and then forming an electrode pattern at a predetermined position between both ends of the Pd-Ni alloy sensor; (e) depositing a conductive metal on the resin layer; (f) removing the resin layer to form an electrode of the electrode pattern electrically connected to the Pd-Ni alloy sensor.

In addition, according to another embodiment of the present invention there is provided a hydrogen sensor manufacturing method using a Pd-Ni alloy thin film, the method (a) after applying a resin layer on a substrate, a photomask having a predetermined sensing pattern is formed Forming a sensor pattern using the sensor; (b) depositing a Pd-Ni alloy on which a relative ratio of Pd and Ni is controlled while controlling the deposition rates of Pd and Ni on the substrate on which the sensor pattern is formed; (c) removing the resin layer to form a Pd-Ni alloy sensor of the sensor pattern on the substrate; (d) After applying the resin layer on the substrate on which the Pd-Ni alloy sensor is formed again, using a photomask having a predetermined electrode pattern, electrodes are positioned at both ends of the Pd-Ni alloy sensor and at a predetermined position in the middle. Forming a pattern; (e) depositing a conductive metal on the resin layer; (f) removing the resin layer to form an electrode of the electrode pattern electrically connected to the Pd-Ni alloy sensor.

In addition, according to another aspect of the present invention, there is provided a hydrogen sensor manufactured using a Pd-Ni alloy thin film. The hydrogen sensor includes a substrate; A detector portion formed by depositing a Pd-Ni alloy on which the relative ratio of Pd and Ni is controlled while controlling the deposition rate of Pd and Ni, and reacting with hydrogen gas to cause an electrical change; And a plurality of electrode parts electrically connected to the sensor part at predetermined positions at both ends and intermediate portions on the sensor part to detect electrical changes occurring in the sensor part.

According to the present invention, by advancing the development of a hydrogen gas detection sensor that is essential for the use of hydrogen energy, which is the next generation energy source, it can play a key role in spreading safety technology for hydrogen energy use. In addition, the hydrogen sensor of the present invention can achieve miniaturization, high performance and stability at a low cost, and it can be expected that the selection of world-class hydrogen sensor technology as well as preoccupation of urea technology in Korea can be expected.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings. In the following description, forming various patterns using a photoresist and a photo mask is a process widely used in the art, and description thereof will be omitted.

1 is a view schematically showing a process for a hydrogen sensor manufacturing process using a Pd-Ni alloy thin film of the present invention.

According to the present invention, a photo mask as shown in Fig. 1A is used to form the sensor part. Here, the sensor part corresponds to the inside of the rectangle 120. In order to form such a pattern, a general photo lithography process, that is, a resin layer, for example, a photoresist is applied on the substrate 110 and then baked at about 95 ° C. for 2 minutes, and then the photo mask. After exposure to ultraviolet light for about 3 seconds using a process to develop. By performing such a process, a result as shown in FIG. 1B can be obtained, and the substrate is directly exposed inside the rectangle 120. On the other hand, the present invention is not limited to the type of the substrate, but preferably a SiO ₂ substrate can be used.

Next, in the present invention, a Pd-Ni alloy is deposited on the substrate on which the sensor pattern 120 is formed by using a sputter. The deposition of the two metal elements such as Pd and Ni may be carried out using a conventional co-sputtering method, and the thickness of the deposited Pd-Ni alloy thin film is preferably in the range of 5 nm to 100 nm. . In other words, according to the inventor's study, the thickness of the Pd-Ni thin film is related to the reaction time. The thinner the thickness, the faster hydrogen detection is possible, so the thinner the thickness of the Pd-Ni thin film is advantageous. However, if the thickness is too thin, even if Pd-Ni is deposited, it may exist in a grain state rather than a thin film, and thus electricity may not pass. Therefore, the thickness of the thin film is preferably 5 nm to 100 nm so as to secure a fast reaction time and allow electricity to pass through the thin film, and usually 20 nm is more preferable from a practical point of view.

Meanwhile, according to the research of the present inventors, in the Pd-Ni alloy, Pd plays a catalytic role in the reaction with hydrogen, and Ni reduces the lattice constant of Pd, which serves as a sensing unit, thereby reducing the Pd-Ni alloy hydrogen sensor. It increases durability and shortens reaction time. On the other hand, in the Pd-Ni alloy, the atomic composition ratio of Pd and Ni can be changed by controlling the deposition rate of each metal during co-deposition. In this regard, according to the inventors' review, when the content of Ni is too high, the influence of Pd is relatively reduced, so that the sensitivity (that is, the resistance change occurring when hydrogen is added) is reduced. In addition, the increase in the relative amount of Ni does not continuously reduce the reaction time, but after a certain decrease, it no longer decreases. Therefore, it is necessary to optimize the content of Ni, according to the present invention in consideration of the effect of Ni on the reaction time and the effect of Ni on the durability in the Pd-Ni alloy, 5-20% of the total alloy It is preferable to include in quantity, More preferably, it is 5 to 7%.

In the present invention, it is possible to remove the PR applied on the substrate through a general lift-off process, thereby as shown in Figure 1 (c) on the substrate 110 of the same form as the photo mask The Pd-Ni sensing body 130 can be formed. At this time, the Pd-Ni alloy is formed in the same portion as the rectangle 120 of the photo mask shown in (a) of FIG. 1 to form the detector 130. The sensor 130 portion later acts as a portion that directly reacts with hydrogen in the sensor to cause a resistance change.

Subsequently, a conventional photolithography process is performed again on the sensor by using a photo mask having a pattern as shown in FIG. That is, after the resin layer is formed again on the substrate 110 on which the Pd-Ni alloy sensor 130 is formed, the resin layer is subjected to a baking process, and then only a part of the resin layer is formed by using a photo mask as shown in FIG. Is exposed to ultraviolet light. At this time, the two patterns are aligned so that the sensor 130 and the electrode pattern 140 overlap each other. At this time, the portion exposed to the ultraviolet rays is inside the electrode pattern 140, and after the development process, two patterns overlap each other to form a four-terminal structure as shown in FIG. As described above, the rectangular shape 130 is a sensor 130 formed of a Pd-Ni alloy, and the electrode pattern 140 is in a state in which the substrate 110 is directly exposed by development. On the other hand, according to an embodiment of the present invention, the electrode pattern or the sensor pattern is implemented in a micro size.

Subsequently, in the present invention, the conductive metal 150 is deposited using a sputter on the substrate on which the sensor 130 and the electrode pattern 140 are formed. It is preferable to use Ti or Au as the conductive metal. Next, as described above, the resin layer made of the photoresist is removed on the substrate through a general lift-off process. As a result, the same electrode 150 as the electrode pattern 140 shown in FIG. 1D is formed on the substrate, which is aligned with each other and the sensor 130 shown in FIG. A Pd-Ni alloy hydrogen sensor having a shape as shown in (f) of is manufactured. At this time, the sensor 130 and the electrode 150 made of a Pd-Ni alloy is electrically connected to each other.

In detail, the two electrodes 150 connected to both ends of the detector 130 are used as input / output electrodes for applying a current to the detector 130 made of a Pd-Ni alloy, and the two electrodes positioned among the detectors 130 ( 150 serves as a measuring electrode for detecting an electrical change of the sensor 130 when the sensor 130 is exposed to hydrogen gas.

In addition, according to a preferred embodiment of the present invention, the surface area can be maximized by ion milling the Pd-Ni alloy sensor 130 having the pattern as described above. The method of ion milling the Pd-Ni alloy sensor includes a method of ion milling the upper part of the substrate on which the sensor is formed. More preferably, the Pd-Ni alloy sensor is again on the substrate on which the sensor 130 is formed. After applying the resin layer, there is a method of forming a resin layer pattern so as to expose only the Pd-Ni alloy portion, and performing ion milling on the exposed Pd-Ni alloy, and then removing the resin layer.

In addition, according to a preferred embodiment of the present invention, the mechanical properties can be increased by heat-treating the Pd-Ni alloy sensor 130 having the pattern as described above. The method of heat-treating the Pd-Ni alloy sensor has a method of heat-treating the substrate on which the sensor is formed in a furnace, and more preferably, the substrate on which the Pd-Ni alloy sensor 130 is formed. After the heat treatment in the furnace there is a method for performing a photolithography process for forming the electrode.

2 is an optical micrograph of a Pd-Ni alloy hydrogen gas detection sensor manufactured through the above process according to an embodiment of the present invention.

Unlike the conventional hydrogen detection sensor, the Pd-Ni alloy sensor manufactured according to the above process can measure room temperature and have a small size, thereby reducing power consumption. In addition, since the structure is simple, the reaction time with hydrogen is fast, and unlike the pure palladium (Pd), since the thin film breakage does not occur, it is possible to secure stable operation. In addition, as described below, hydrogen concentrations between 20 ppm and 10,000 ppm can be detected within a 0.01% error range (for example, the magnitude of irregular noise in the signal, as shown in FIG. 6F). Therefore, the Pd-Ni alloy hydrogen gas detection sensor manufactured according to the present invention can satisfy the essential requirements as a sensor for reducing reaction time and driving stable while satisfying characteristics of miniaturization, low power consumption, and room temperature operation.

In the following, the present invention will be described in detail by way of examples, but it should be noted that this is for describing the preferred embodiment of the present invention and not for limiting the present invention.

(Example)

In order to perform a general photolithography process, a photoresist resin layer is coated on a SiO ₂ substrate and baked for 2 minutes at a temperature of 95 ° C. Then, the sensor pattern is exposed to ultraviolet rays for 3 seconds using a photomask manufactured with a size of 300 μm ⅹ 40 μm, treated with a developer, and a Pd-Ni alloy is deposited on the substrate using a sputter. At this time, the thickness of the Pd-Ni alloy is deposited in the range of 5 nm ~ 100 nm, and this is subjected to a general lift-off process to mount the Pd-Ni alloy sensor 130 of a predetermined size on the substrate 110. To form.

Subsequently, the photoresist resin layer is again applied on the substrate on which the sensor 130 is formed, and then baked at a temperature of 95 ° C. for 2 minutes, and then the photo mask on which the 4-pole electrode pattern is formed is aligned with the sensor. The resin layer is exposed to ultraviolet rays. After the developer is treated again, a Au layer is deposited on the substrate using a sputter, and the Au layer 150 is formed on the sensor 130 by removing the resin layer through a conventional lift-off process. Let's do it. Through this series of processes, a Pd-Ni alloy hydrogen sensor may be manufactured in which the Pd-Ni alloy sensor and the Au electrode are electrically connected.

In order to evaluate the characteristics of the hydrogen sensor manufactured according to the above process, a system capable of measuring a 4-point probe method was used. This is an IV measuring device as shown in FIG. 3, and focuses on the Pd-Ni alloy hydrogen sensor 210, the reaction chamber 230; A supply valve 250 of H ₂ and N ₂ gas; A mass flow controller (MFC) 270 for controlling flow rates of H ₂ and N ₂ gases; And a voltage and current applying device 290 of the sensor.

In this system, the reaction chamber 230 in which the Pd-Ni alloy hydrogen sensor is mounted is sealed to the outside when the hydrogen gas reacts with the sensor, and the H ₂ and N ₂ gas introduced through the gas supply valve 250 are MFC. 270, the amount is precisely controlled to create the desired ratio of hydrogen gas concentration. The adjusted H ₂ gas reacts with the hydrogen sensor in the reaction chamber 230, and the electrical signal for the change of the sensor at this time is measured through the voltage and current applying device 290.

Hereinafter, the mechanism of hydrogen detection according to the present invention will be described.

Since the atomic radius of Ni in the Pd-Ni alloy is smaller than the atomic radius of Pd, the lattice constant of the Pd-Ni alloy is smaller than the lattice constant of pure Pd in proportion to the concentration of Ni in the alloy. If such a Pd-Ni alloy, the hydrogen sensor is exposed to hydrogen gas in the reaction chamber 230, a hydrogen partial pressure around the Pd-Ni alloy (H ₂ partial pressure) is higher than the hydrogen pressure within the Pd-Ni alloy, the hydrogen molecule In order to lower the interfacial energy of the surface of the Pd-Ni alloy, it is adsorbed on the surface of the Pd-Ni alloy and dissociated into H atoms. The hydrogen partial pressure difference inside and outside the Pd-Ni alloy acts as a driving force for dissociated H atoms to diffuse into the Pd-Ni alloy, and the diffused H atoms intrude into the face centered cubic structure formed by the α-phase Pd atoms. It penetrates into the mold site and forms PdH _x . At this time, the lattice constant increases due to H atoms entering the invasive sites. Since the lattice constant decreases due to the influence of Ni, the strain energy due to the infiltrated H atoms becomes smaller than in pure Pd, which is a Pd-Ni alloy. It is more durable than pure Pd and causes more stable and flammable reaction when exposed to hydrogen gas repeatedly.

If there are too many hydrogen atoms employed to reach the marginal solubility, the hydrogen atoms are regularly β-phased at invasive sites in order to lower the increased strain energy and stabilize the mutual attraction between the hydrogen atoms, which leads to It will be in every invasive position. In some cases, the metal atoms may also be rearranged together to change the crystal structure. However, in the case of Pd, the Pd atoms are not rearranged so that the crystal structure does not change. Electrons moving inside the Pd-Ni alloy due to the potential difference increase resistance due to increased scattering (scattering) than in the absence of hydrogen atoms due to the hydrogen atoms disposed in the invasive sites. You can get the difference.

4A and 4B are micrographs showing the appearance of a thin film after repeatedly exposing a Pd-Ni alloy hydrogen gas detection sensor manufactured according to the present invention to hydrogen gas.

As shown in the figure, the pure Pd thin film containing no Ni can be physically damaged after exposure to hydrogen gas seven times (see FIG. 4A), but the Pd thin film containing 10% Ni is not exposed to hydrogen gas. It can be seen that there is no physical change in the thin film after the exposure (see FIG. 4B).

5a and 5b are graphs showing the results of measuring the resistance change by mounting the Pd-Ni alloy hydrogen gas detection sensor of the present invention in the system of FIG.

When the Pd thin film containing no Ni was repeatedly exposed to hydrogen gas, a stable change signal could not be obtained as shown in Fig. 5A because of damage as shown in Fig. 4A. However, as shown in Figure 5b, it can be seen that the Pd-Ni thin film containing 10% of Ni shows a regular and stable signal. That is, when the Ni-containing Pd-Ni thin film is used as the hydrogen sensor detection unit, it can be seen that the mechanical properties of the thin film are greatly improved, thereby obtaining a constant and repetitive signal.

6A to 6G are graphs illustrating a result of measuring a resistance change according to the concentration of hydrogen gas by mounting a Pd-Ni alloy hydrogen gas detection sensor manufactured according to the present invention in the system of FIG. 3. These measurements were carried out at room temperature and pressure, and the Pd-Ni alloy resistor was mounted in a hermetically sealed chamber connected to an external current application device, and then a 10 μA current was applied while flowing a mixture of H ₂ and N ₂ into the chamber. The difference in resistance was measured by changing the potential difference.

6A to 6G show changes in hydrogen concentrations up to 10000 ppm, 5000 ppm, 1000 ppm, 500 ppm, 100 ppm, 50 ppm and 20 ppm for a Pd-Ni alloy hydrogen gas detection sensor containing 10% Ni, respectively. As a result of the measurement, it can be seen that a sudden change in resistance occurs in about 9 seconds at 1% hydrogen, which is 1/4 of the upper explosion limit. That is, it shows that hydrogen can be detected at a much faster rate than the conventional hydrogen sensor element, and it can be seen that it has very good durability without changing the magnitude of the signal even after several repetitions.

In addition, even in the initial detection hydrogen amount, which is the most important element of the sensor, the hydrogen sensor of the present invention not only shows a very small amount of hydrogen of 20 ppm in about 30 seconds, but also accurately detects a difference in hydrogen concentration of several tens of ppm. You can see that you can do it. For reference, the detection of 20 ppm hydrogen is the lowest detection concentration in a hydrogen sensor using existing technology.

Referring to FIGS. 7A and 7B, when the concentration of Ni in the Pd-Ni thin film is systematically changed and the reaction time is measured at each hydrogen concentration, hydrogen is detected in a faster time in the case of Pd containing Ni. I can see that. That is, FIG. 7A and FIG. 7B show the reaction time in 1% hydrogen according to the content of Ni. FIG. 7A and FIG. 7B illustrate the time taken for the reaction to start and a total change of 36.8% occurs. As shown in FIG. 7A, the reaction time is shorter in the case of Pd-Ni alloy than pure Pd, and the extent of the reaction time is shortened depending on the content of Ni in the Pd-Ni. Figure 7b shows the change in sensitivity with Ni content at 1% hydrogen concentration.

 In addition, according to the present invention, the performance can be doubled when the Pd-Ni sensor part is heat treated, and FIGS. 8A and 8B show the reaction before and after heat treatment of the Pd-Ni sensor part. Specifically, FIG. 8A is a graph showing a resistance change with time when the sensor part containing 7% Ni is exposed to 1% hydrogen before heat treatment, and FIG. 8B is a graph showing the sensor part containing 7% Ni 650. This graph shows the resistance change with time when heat-treated at ℃ for 2 hours and exposed to 1% hydrogen. As shown, the results after the heat treatment can be seen that the sensitivity is increased and the reaction time is shorter than before the heat treatment, which means that both of the factors that determine the performance of the hydrogen sensor have been improved.

As mentioned above, although this invention was demonstrated with reference to the preferable embodiment, it should be noted that this invention is not limited to the said embodiment. That is, the present invention can be modified and modified in various forms without departing from the spirit and scope of the invention as set forth in the claims below, all of which fall within the scope of the invention. Therefore, it is limited only by the claims of the present invention and equivalents thereof.

1 is a view schematically showing a hydrogen sensor manufacturing process using a Pd-Ni alloy thin film according to an embodiment of the present invention.

2 is an optical micrograph of a Pd-Ni alloy hydrogen gas sensor manufactured according to one embodiment of the present invention.

3 is a schematic diagram of a system for measuring the hydrogen detection capability of the hydrogen sensor of the present invention.

4A and 4B are micrographs showing a thin film after repeatedly exposing a hydrogen sensor prepared using pure Pd and a Pd-Ni alloy hydrogen gas detection sensor prepared according to the present invention to hydrogen gas.

5a and 5b are graphs showing the results of measuring the resistance change by mounting the Pd-Ni alloy hydrogen gas detection sensor of the present invention in the system of FIG.

6A to 6G are graphs showing the results of measuring the resistance change according to the concentration of hydrogen gas by mounting the Pd-Ni alloy hydrogen gas detection sensor manufactured according to the present invention in the system of FIG. 3, and FIG. 6A is 10000 ppm. 6B is 5000 ppm, FIG. 6C is 1000 ppm, FIG. 6D is 500 ppm, FIG. 6E is 100 ppm, FIG. 6F is 50 ppm, and FIG. 6G is a measurement result at a hydrogen concentration of 20 ppm.

7A is a graph showing a change in reaction time according to the Ni ratio, and FIG. 7B is a graph showing a change in sensitivity according to the Ni content change.

8A and 8B are graphs showing the difference between the reaction time and the sensitivity before and after the heat treatment of the Pd-Ni alloy sensor.

Claims (20)

(a) applying a resin layer on the substrate, and then forming a sensor pattern; (b) depositing a Pd-Ni alloy on which a relative ratio of Pd and Ni is adjusted while controlling the deposition rates of Pd and Ni on the substrate on which the sensor pattern is formed; (c) removing the resin layer to form a Pd-Ni alloy sensor of the sensor pattern on the substrate; (d) applying a resin layer on the substrate on which the Pd-Ni alloy sensor is formed, and then forming an electrode pattern at a predetermined position between both ends of the Pd-Ni alloy sensor; (e) depositing a conductive metal on the resin layer; (f) removing the resin layer to form an electrode of the electrode pattern electrically connected to the Pd-Ni alloy sensor; Hydrogen sensor manufacturing method using a Pd-Ni alloy thin film comprising a. The method of claim 1, wherein in the steps (a) and (d), the sensor pattern and the electrode pattern are formed by using a photolithography process. The method of manufacturing a hydrogen sensor using a Pd-Ni alloy thin film of claim 1, further comprising ion milling the Pd-Ni alloy sensor after the step (c) or after the step (f). The method of manufacturing a hydrogen sensor using a Pd-Ni alloy thin film of claim 1, further comprising: heat treating the Pd-Ni alloy sensor after step (c) or after step (f). The method of manufacturing a hydrogen sensor using a Pd-Ni alloy thin film according to any one of claims 1 to 4, wherein the conductive metal is Ti or Au. The hydrogen sensor manufacturing method using a Pd-Ni alloy thin film according to any one of claims 1 to 4, wherein the Pd-Ni alloy sensor contains 5% to 20% of Ni. The method according to any one of claims 1 to 4, wherein the deposited Pd-Ni alloy sensor has a thickness of about 5 nm to 10 nm. The method for producing a hydrogen sensor using a Pd-Ni alloy thin film according to any one of claims 1 to 4, wherein a hydrogen concentration of 20 to 10,000 ppm can be detected. The method of manufacturing a hydrogen sensor using a Pd-Ni alloy thin film according to any one of claims 1 to 4, wherein the electrode comprises a four-pole electrode. 10. The method of claim 9, wherein the four-pole electrode is located on both ends of the Pd-Ni alloy sensor to apply a current and the input and output electrodes, the sensor is located in the middle of the sensor is exposed to hydrogen gas Method of manufacturing a hydrogen sensor using a Pd-Ni alloy thin film, characterized in that consisting of two measuring electrodes for detecting the electrical changes that occur. (a) applying a resin layer onto a substrate, and then forming a sensor pattern using a photo mask on which a predetermined sensor pattern is formed; (b) depositing a Pd-Ni alloy on which a relative ratio of Pd and Ni is adjusted while controlling the deposition rates of Pd and Ni on the substrate on which the sensor pattern is formed; (c) removing the resin layer to form a Pd-Ni alloy sensor of the sensor pattern on the substrate; (d) After applying the resin layer on the substrate on which the Pd-Ni alloy sensor is formed again, using a photomask having a predetermined electrode pattern, electrodes are positioned at both ends of the Pd-Ni alloy sensor and at a predetermined position in the middle. Forming a pattern; (e) depositing a conductive metal on the resin layer; (f) removing the resin layer to form an electrode of the electrode pattern electrically connected to the Pd-Ni alloy sensor; Hydrogen sensor manufacturing method using a Pd-Ni alloy thin film comprising a. The method of claim 11, further comprising ion milling the Pd-Ni alloy sensor after step (c) or after step (f). The method of claim 11, further comprising: heat treating the Pd-Ni alloy sensor after the step (c) or after the step (f). The method of manufacturing a hydrogen sensor using a Pd-Ni alloy thin film according to any one of claims 11 to 13, wherein the electrode comprises a four-pole electrode. The method according to claim 14, wherein the four-pole electrode is located on both ends of the Pd-Ni alloy sensor to apply a current and the input and output electrodes, the sensor is located in the middle of the sensor is exposed to hydrogen gas Method of manufacturing a hydrogen sensor using a Pd-Ni alloy thin film, characterized in that consisting of two measuring electrodes for detecting the electrical changes that occur. delete delete A hydrogen sensor manufactured using a Pd-Ni alloy thin film, A substrate; A detector portion formed by depositing a Pd-Ni alloy on which the relative ratio of Pd and Ni is controlled while controlling the deposition rate of Pd and Ni, and reacting with hydrogen gas to cause an electrical change; A plurality of electrode parts electrically connected to the sensor part at both ends and intermediate positions on the sensor part to detect electrical changes occurring in the sensor part; Including, The plurality of electrode parts are located at both ends of the Pd-Ni alloy sensor part and two input / output electrodes for applying a current, and an electrical change generated when the sensor is exposed to hydrogen gas in the middle of the sensor. It consists of two measuring electrodes to detect And said sensor part contains between 5% and 20% Ni. 19. The hydrogen sensor of claim 18, wherein the deposition thickness of the sensor is about 5 nm to about 100 nm. The hydrogen sensor of claim 18, wherein the hydrogen sensor can detect a hydrogen concentration in the range of 20 to 10,000 ppm.

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