KR100885691B1 - 포지티브 포토레지스트 조성물 및 패턴형성방법 - Google Patents

포지티브 포토레지스트 조성물 및 패턴형성방법 Download PDF

Info

Publication number
KR100885691B1
KR100885691B1 KR1020020018519A KR20020018519A KR100885691B1 KR 100885691 B1 KR100885691 B1 KR 100885691B1 KR 1020020018519 A KR1020020018519 A KR 1020020018519A KR 20020018519 A KR20020018519 A KR 20020018519A KR 100885691 B1 KR100885691 B1 KR 100885691B1
Authority
KR
South Korea
Prior art keywords
group
compound
positive photoresist
photoresist composition
represented
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020020018519A
Other languages
English (en)
Korean (ko)
Other versions
KR20020079483A (ko
Inventor
후지모리토루
고다마구니히코
사토겐이치로
아오아이도시아키
Original Assignee
후지필름 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 후지필름 가부시키가이샤 filed Critical 후지필름 가부시키가이샤
Publication of KR20020079483A publication Critical patent/KR20020079483A/ko
Application granted granted Critical
Publication of KR100885691B1 publication Critical patent/KR100885691B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020020018519A 2001-04-06 2002-04-04 포지티브 포토레지스트 조성물 및 패턴형성방법 Expired - Fee Related KR100885691B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2001-00108627 2001-04-06
JP2001108627A JP4255100B2 (ja) 2001-04-06 2001-04-06 ＡｒＦエキシマレ−ザ−露光用ポジ型フォトレジスト組成物及びそれを用いたパタ−ン形成方法

Publications (2)

Publication Number Publication Date
KR20020079483A KR20020079483A (ko) 2002-10-19
KR100885691B1 true KR100885691B1 (ko) 2009-02-26

Family

ID=18960727

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020020018519A Expired - Fee Related KR100885691B1 (ko) 2001-04-06 2002-04-04 포지티브 포토레지스트 조성물 및 패턴형성방법

Country Status (4)

Country Link
US (1) US6692884B2 (https=)
JP (1) JP4255100B2 (https=)
KR (1) KR100885691B1 (https=)
TW (1) TWI298116B (https=)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2809829B1 (fr) * 2000-06-05 2002-07-26 Rhodia Chimie Sa Nouvelle composition photosensible pour la fabrication de photoresist
KR100795109B1 (ko) * 2001-02-23 2008-01-17 후지필름 가부시키가이샤 포지티브 감광성 조성물
TW565748B (en) * 2001-05-17 2003-12-11 Fuji Photo Film Co Ltd Positive radiation-sensitive composition
US7510822B2 (en) * 2002-04-10 2009-03-31 Fujifilm Corporation Stimulation sensitive composition and compound
JP4281326B2 (ja) * 2002-07-25 2009-06-17 住友化学株式会社 化学増幅型ポジ型レジスト組成物
JP4067359B2 (ja) * 2002-08-08 2008-03-26 富士フイルム株式会社 ポジ型レジスト組成物
JP3986927B2 (ja) * 2002-08-22 2007-10-03 富士通株式会社 半導体装置の製造方法
JP2004233953A (ja) * 2002-12-02 2004-08-19 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物
JP4434762B2 (ja) 2003-01-31 2010-03-17 東京応化工業株式会社 レジスト組成物
KR20050098957A (ko) * 2003-02-25 2005-10-12 도오꾜오까고오교 가부시끼가이샤 포토레지스트 조성물 및 레지스트 패턴의 형성 방법
JP2005099646A (ja) * 2003-03-28 2005-04-14 Tokyo Ohka Kogyo Co Ltd 液浸露光プロセス用レジスト組成物および該レジスト組成物を用いたレジストパターン形成方法
JP4083053B2 (ja) * 2003-03-31 2008-04-30 富士フイルム株式会社 ポジ型レジスト組成物
US20050058933A1 (en) * 2003-09-17 2005-03-17 Meagley Robert P. Quantum efficient photoacid generators for photolithographic processes
US7427463B2 (en) * 2003-10-14 2008-09-23 Intel Corporation Photoresists with reduced outgassing for extreme ultraviolet lithography
JP4365235B2 (ja) * 2004-02-20 2009-11-18 富士フイルム株式会社 液浸露光用レジスト組成物及びそれを用いたパターン形成方法
KR100574495B1 (ko) * 2004-12-15 2006-04-27 주식회사 하이닉스반도체 광산발생제 중합체, 그 제조방법 및 이를 함유하는상부반사방지막 조성물
JP4687878B2 (ja) * 2005-05-27 2011-05-25 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
KR100833706B1 (ko) 2007-02-01 2008-05-29 삼성전자주식회사 감광성 폴리이미드 조성물, 폴리이미드 필름 및 이를 이용한 반도체 소자
US7803521B2 (en) * 2007-11-19 2010-09-28 International Business Machines Corporation Photoresist compositions and process for multiple exposures with multiple layer photoresist systems
CN109991811A (zh) * 2019-02-27 2019-07-09 江苏南大光电材料股份有限公司 一种酸扩散抑制剂及其制备方法与光刻胶组合物

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0792680A (ja) * 1993-06-29 1995-04-07 Nippon Zeon Co Ltd レジスト組成物
KR19990078077A (ko) * 1998-03-20 1999-10-25 무네유키 가코우 원자외선 노광용 포지티브 포토레지스트 조성물
KR19990088376A (ko) * 1998-05-19 1999-12-27 마쯔모또 에이찌 디아조디술폰화합물및감방사선성수지조성물
KR20000077311A (ko) * 1999-05-19 2000-12-26 카나가와 치히로 레지스트 재료 및 패턴 형성 방법
KR20010015400A (ko) * 1999-07-22 2001-02-26 무네유키 가코우 원자외선 노광용 포지티브 포토레지스트 조성물
KR20020077944A (ko) * 2001-04-03 2002-10-18 후지 샤신 필름 가부시기가이샤 포지티브 포토레지스트 조성물

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3751065B2 (ja) 1995-06-28 2006-03-01 富士通株式会社 レジスト材料及びレジストパターンの形成方法
JP3297272B2 (ja) 1995-07-14 2002-07-02 富士通株式会社 レジスト組成物及びレジストパターンの形成方法
JP3712218B2 (ja) 1997-01-24 2005-11-02 東京応化工業株式会社 化学増幅型ホトレジスト組成物
JP3546679B2 (ja) 1997-01-29 2004-07-28 住友化学工業株式会社 化学増幅型ポジ型レジスト組成物
JP3832780B2 (ja) 1997-02-27 2006-10-11 富士写真フイルム株式会社 ポジ型フォトレジスト組成物
JP3902835B2 (ja) * 1997-06-27 2007-04-11 東京応化工業株式会社 ポジ型ホトレジスト組成物
TW507116B (en) * 2000-04-04 2002-10-21 Sumitomo Chemical Co Chemically amplified positive resist composition
TWI286664B (en) * 2000-06-23 2007-09-11 Sumitomo Chemical Co Chemical amplification type positive resist composition and sulfonium salt
TW538056B (en) * 2000-07-11 2003-06-21 Samsung Electronics Co Ltd Resist composition comprising photosensitive polymer having lactone in its backbone
EP1179750B1 (en) * 2000-08-08 2012-07-25 FUJIFILM Corporation Positive photosensitive composition and method for producing a precision integrated circuit element using the same

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0792680A (ja) * 1993-06-29 1995-04-07 Nippon Zeon Co Ltd レジスト組成物
KR19990078077A (ko) * 1998-03-20 1999-10-25 무네유키 가코우 원자외선 노광용 포지티브 포토레지스트 조성물
KR19990088376A (ko) * 1998-05-19 1999-12-27 마쯔모또 에이찌 디아조디술폰화합물및감방사선성수지조성물
KR20000077311A (ko) * 1999-05-19 2000-12-26 카나가와 치히로 레지스트 재료 및 패턴 형성 방법
KR20010015400A (ko) * 1999-07-22 2001-02-26 무네유키 가코우 원자외선 노광용 포지티브 포토레지스트 조성물
KR100752250B1 (ko) * 1999-07-22 2007-08-29 후지필름 가부시키가이샤 원자외선 노광용 포지티브 포토레지스트 조성물
KR20020077944A (ko) * 2001-04-03 2002-10-18 후지 샤신 필름 가부시기가이샤 포지티브 포토레지스트 조성물

Also Published As

Publication number Publication date
US20030044715A1 (en) 2003-03-06
US6692884B2 (en) 2004-02-17
TWI298116B (en) 2008-06-21
KR20020079483A (ko) 2002-10-19
JP4255100B2 (ja) 2009-04-15
JP2002303980A (ja) 2002-10-18

Similar Documents

Publication Publication Date Title
JP3444821B2 (ja) ポジ型フォトレジスト組成物
KR100950508B1 (ko) 포지티브 레지스트 조성물 및 이를 사용한 패턴 형성 방법
KR100885691B1 (ko) 포지티브 포토레지스트 조성물 및 패턴형성방법
JP4187949B2 (ja) ポジ型レジスト組成物
KR100896000B1 (ko) 포지티브 레지스트 조성물 및 이를 사용한 패턴 형성 방법
KR100773045B1 (ko) 포지티브 레지스트 조성물
JP2003005375A (ja) ポジ型レジスト組成物
JP3995575B2 (ja) ポジ型レジスト組成物
KR20010015400A (ko) 원자외선 노광용 포지티브 포토레지스트 조성물
JP4124978B2 (ja) ポジ型レジスト組成物
JP2004361629A (ja) ポジ型レジスト組成物
JP2002265436A (ja) ポジ型レジスト組成物
JP3948506B2 (ja) ポジ型フォトレジスト組成物
JP2002202607A (ja) 遠紫外線露光用ポジ型フォトレジスト組成物
KR100765245B1 (ko) 포지티브 포토레지스트 조성물
JP4210439B2 (ja) ポジ型フォトレジスト組成物
JP3929648B2 (ja) 遠紫外線露光用ポジ型フォトレジスト組成物
JP4070521B2 (ja) ポジ型レジスト組成物
KR100913732B1 (ko) 포지티브 포토레지스트 조성물 및 이 조성물을 이용한 패턴형성방법
JP3934291B2 (ja) 遠紫外線露光用ポジ型レジスト組成物
JP4090773B2 (ja) ポジ型レジスト組成物
KR100866053B1 (ko) 포지티브 레지스트 조성물 및 이를 사용한 패턴 형성 방법
JP2002296782A (ja) ポジ型レジスト組成物
JP4208422B2 (ja) ポジ型レジスト組成物
JP2002341541A (ja) ポジ型レジスト組成物

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

N231 Notification of change of applicant
PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20130201

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20140204

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20150119

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20160119

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

FPAY Annual fee payment

Payment date: 20170119

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

FPAY Annual fee payment

Payment date: 20180202

Year of fee payment: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

FPAY Annual fee payment

Payment date: 20190201

Year of fee payment: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

FPAY Annual fee payment

Payment date: 20200205

Year of fee payment: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20210220

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20210220

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000