KR100878454B1 - A stacked microphone having signal process block and manufacturing method thereof - Google Patents

A stacked microphone having signal process block and manufacturing method thereof Download PDF

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Publication number
KR100878454B1
KR100878454B1 KR1020080018083A KR20080018083A KR100878454B1 KR 100878454 B1 KR100878454 B1 KR 100878454B1 KR 1020080018083 A KR1020080018083 A KR 1020080018083A KR 20080018083 A KR20080018083 A KR 20080018083A KR 100878454 B1 KR100878454 B1 KR 100878454B1
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KR
South Korea
Prior art keywords
processing block
signal processing
microphone
metal layer
signal
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KR1020080018083A
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Korean (ko)
Inventor
이병수
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(주)실리콘화일
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    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00Electrostatic transducers
    • H04R19/005Electrostatic transducers using semiconductor materials
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R1/00Details of transducers, loudspeakers or microphones
    • H04R1/02Casings; Cabinets ; Supports therefor; Mountings therein
    • H04R1/04Structural association of microphone with electric circuitry therefor

Abstract

The stack microphone and manufacturing method thereof including the signal processing block are provided to reduce the manufacture cost by using the CMOS process. The stack microphone(100) including the signal processing block comprises the signal processing block(120) and microphone(130). The signal processing block is formed by using the CMOS process on the semiconductor substrate(110) of silicon. The microphone(130) is laminated on the signal processing block. The signal processing block comprises a plurality of transistors and silicon gate. The surface of the semiconductor substrate in which the signal processing block is formed comprises the passivation layers(150). The passivation layer is formed with the metal line, the silicon oxide and silicon nitride. The microphone is formed on the top of the signal processing block. The pad(140) for input-output is installed on the top of the semiconductor substrate. The microphone is electrically connected to the signal processing block.

Description

A stacked microphone having a signal processing block and a method for manufacturing the same

The present invention relates to a microphone and a method of manufacturing the same, and more particularly, to a stacked microphone including a signal processing block in which microphones are stacked on an upper portion of a semiconductor substrate on which a signal processing block is formed by a CMOS process. .

The microphone is a device that converts an external voice signal into an electrical signal, and is mainly used in communication devices such as mobile phones, MP3s, telephones, medical devices such as hearing aids, or miniaturized multifunctional smart sensors, or small precision devices. Today, as the miniaturization of such a sound device or information communication device in which the microphone is mounted is accelerated, the miniaturization of the microphone is further required.

In general, small microphones can be largely divided into resistance type, piezoelectric type, and condenser type, and condenser type is mainly used. The condenser type is one of the microphones with small volume, high sensitivity, and excellent frequency characteristics, and one pole of the capacitor is fixed and the other pole serves as a diaphragm. Therefore, when the diaphragm vibrates due to external pressure, the distance from the fixed pole is changed and the capacitance is used as a microphone.

Recently, various methods of manufacturing micro microphones using the Micro Electro Mechanical Sysems (hereinafter referred to as 'MEMS') process have been proposed, and micro microphones using the MEMS process are generally manufactured using a silicon substrate.

In the conventional condenser-type microphone using a silicon substrate, a method of installing a pole plate by growing polycrystalline silicon, silicon nitride, silicon oxide, etc. using a low pressure chemical vapor deposition (LPCVD) process on the silicon substrate Use Therefore, since a high temperature process is required, the board | substrate with which the circuit was already formed by the CMOS process cannot be used.

SUMMARY OF THE INVENTION The present invention has been made in an effort to provide a stacked microphone having a signal processing block in which microphones are stacked on a substrate on which a signal processing block is formed by a CMOS process.

Another technical problem to be solved by the present invention is to provide a method for manufacturing a microphone formed in a stacked form on top of a substrate on which a signal processing block is formed by a CMOS process.

A stacked microphone including a signal processing block according to the present invention for achieving the technical problem is a signal processing block formed through a CMOS process on a semiconductor substrate; And microphones stacked on top of the semiconductor substrate.

According to another aspect of the present invention, there is provided a method of manufacturing a stacked microphone including a signal processing block according to the present invention, which comprises: (a) manufacturing a signal processing block through a CMOS process on a semiconductor substrate and forming a first metal layer on a surface of the semiconductor substrate; Forming an input / output pad; (b) forming a photoresist layer on top of the first metal layer; (c) forming a second metal layer on the semiconductor substrate on which the photoresist layer is formed; And (d) separating the second metal layer formed on the photoresist layer and the second metal layer formed on the input / output pad for electrical insulation.

According to another aspect of the present invention, there is provided a method of manufacturing a stacked microphone including a signal processing block according to the present invention, which comprises: (a) manufacturing a signal processing block through a CMOS process on a semiconductor substrate and forming a first metal layer on a surface of the semiconductor substrate; Forming an input / output pad; (b) forming a photoresist layer on top of the first metal layer; (c) forming a second metal layer on the semiconductor substrate on which the photoresist layer is formed; (d) separating the second metal layer formed on the photoresist layer and the second metal layer formed on the input / output pad for electrical insulation, and a plurality of acoustics on the second metal layer formed on the photoresist layer; Forming a hole; And (e) etching and removing the photoresist layer through the plurality of sound holes.

According to another aspect of the present invention, there is provided a method of manufacturing a stacked microphone including a signal processing block according to the present invention, which comprises: (a) manufacturing a signal processing block through a CMOS process on a semiconductor substrate and forming a first metal layer on a surface of the semiconductor substrate; Forming an input / output pad; (b) forming a photoresist layer on top of the first metal layer; (c) forming a second metal layer on the semiconductor substrate on which the photoresist layer is formed; (d) separating the second metal layer formed on the photoresist layer and the second metal layer formed on the input / output pad for electrical insulation, and a plurality of second metal layers formed on the photoresist layer. Forming an acoustic hole and forming an adhesive layer for electroplating metal on the semiconductor substrate on which the second metal layer is formed; (e) forming an anti-plating photoresist layer and electroplating a portion where the anti-plating photoresist layer is not formed to form a metal plating layer; And (f) etching and removing the plating preventing photoresist layer.

According to the stacked microphone having a signal processing block according to the present invention and a method of manufacturing the same, the signal generated from the stacked microphone due to the vibration of the diaphragm is processed and outputted into a required shape in a signal processing block located below the microphone and signal processing. It is more resistant to external noise than a separate device, and can be output as a desired signal without a separate signal processing device, and the manufacturing cost is low and small by using CMOS process to manufacture a microphone. This has the advantage of being possible.

Hereinafter, specific embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a view showing the configuration of a stacked microphone having a signal process block according to the present invention.

Referring to FIG. 1, a stacked microphone 100 having a signal processing block according to the present invention includes a signal processing block 120 and a signal processing block 120 formed on a silicon semiconductor substrate 110 using a CMOS process. ) Is provided with a microphone 130 formed in a laminated structure.

Since the signal processing block 120 is formed using a normal CMOS process, the signal processing block 120 includes a plurality of transistors and a silicon gate, and the surface of the semiconductor substrate 110 on which the signal processing block 120 is formed is a metal line. ) And a passivation layer 150 made of silicon oxide, silicon nitride, or the like.

A stacked microphone 130 is formed on the signal processing block 120 using the CMOS process, and a pad 140 for input / output is installed.

2 to 4 is a block diagram of a circuit of a stacked microphone having a signal processing block according to the present invention shown in FIG.

As shown in FIG. 2, the stacked microphone 130 is electrically connected to the signal processing block 120, and the signal processing block 120 converts an analog signal and an analog signal 121 to amplify the signal into a digital signal. Analog-to-digital converter (ADC) 122, a digital signal processor (DSP, 123) for processing digital signals and the amplifier 121, analog-to-digital converter 122 and the digital signal processor 123 of A control unit 124 for controlling the operation is provided.

As shown in FIG. 3, the signal processing block 120 may include only an amplifier 121, an analog filter 125, a controller 124, and the like, as required. As shown in FIG. 4. Modulation circuits 126 such as pulse width modulation (PWM) may be further provided.

5 is a cross-sectional view of a stacked microphone having a signal processing block according to an embodiment of the present invention.

Referring to FIG. 5, in a stacked microphone including a signal processing block according to an embodiment of the present invention, a surface of the semiconductor substrate 510 on which the signal processing block 520 is manufactured by a CMOS process is formed on the outer surface of the first metal layer 531. I / O pad 540 and passivation layer 550.

In this case, the first metal layer 531 is used as a lower electrode of the microphone, and a photoresist layer 532 is formed on the first metal layer 531. In this case, the photoresist layer 532 may be formed through a reflow process by applying an appropriate temperature as necessary. A second metal layer 533 is formed on the photoresist layer 532.

The second metal layer 533 formed on the photoresist layer 532 and the second metal layer 541 formed on the input / output pad 540 are separated for electrical insulation.

The photoresist layer 532 and the second metal layer 533 constitute a diaphragm of the microphone, and the characteristics of the vibration of the diaphragm are mainly determined by the characteristics of the photoresist layer 532. Accordingly, in order to change physical properties of the photoresist layer 532, the curing process of the PR may be performed.

6 and 7 are cross-sectional views of stacked microphones having a signal processing block according to another embodiment of the present invention.

Referring to FIG. 6, it can be seen that a plurality of sound holes 534 are formed in the second metal layer 533 in the stacked microphone having the signal processing block according to another exemplary embodiment of the present invention.

In addition, the photoresist layer 532 is removed by etching through the plurality of sound holes 534 to form a structure in which the space between the first metal layer 531 and the second metal layer 533 is empty.

In the stacked microphone including the signal processing block according to another embodiment of the present invention shown in FIG. 6, only the second metal layer 533 functions as a diaphragm.

Vibration of the stacked microphone having the signal processing block according to another embodiment of the present invention is the physical characteristics (elastic coefficient, internal stress, etc.) and the second metal layer 533 of the second metal layer 533 forming the diaphragm ) Is determined by the thickness (t) of the diaphragm, the diameter (a) of the diaphragm, and the electrical characteristics (capacitance) are the area of the diaphragm and the distance (d) between the first metal layer 531 and the second metal layer 533. Is determined by. Therefore, the thickness of the second metal layer 533 to be deposited may be selected in consideration of the above characteristics.

8 is a plan view of a diaphragm of a stacked microphone including a signal processing block according to an embodiment of the present invention, and FIG. 9 is a side view of a diaphragm of a stacked microphone including a signal processing block according to an embodiment of the present invention.

Referring to FIG. 8, the diaphragm has a circular or polygonal shape and has a plurality of sound holes. A plurality of reflection vibration prevention holes are formed around the diaphragm.

Acoustic holes are used to remove the photoresist layer inside the fabrication process and to make the frequency characteristics of the diaphragm uniform. Sides of the diaphragm produced in the above form is as shown in FIG.

The diaphragm is connected to the diaphragm fixing pad, and the diaphragm fixing pad is connected to the other electrode. When the acoustic vibration is incident on the diaphragm, the diaphragm vibrates, and the reflected vibration generated by the vibration of the diaphragm flows out through the anti-reflection vibration holes on the side surface. Therefore, resonance due to the internal structure is suppressed. In addition, when a high frequency noise vibration is incident on the diaphragm, the high frequency vibration is suppressed by a sound hole.

10 is a cross-sectional view of a stacked microphone having a signal processing block according to another embodiment of the present invention.

The stacked microphone including the signal processing block according to another exemplary embodiment of the present invention illustrated in FIG. 10 further includes a metal plating layer 535 on the second metal layer 533. The plurality of sound holes 534 formed in the second metal layer 533 communicate with the metal plating layer 535, and the metal plating layer is mainly formed by electroplating metal of gold (Au) or chromium (Cr) material. do.

FIG. 11 is a view illustrating a manufacturing process of a stacked microphone having a signal processing block according to an embodiment of the present invention shown in FIG. 5.

As shown in FIG. 11, in the manufacturing process of the stacked microphone including the signal processing block according to the exemplary embodiment of the present invention, (a) the signal processing block 520 is manufactured through a CMOS process on the semiconductor substrate 510. Forming a first metal layer 531 and an input / output pad 540 on a surface of the semiconductor substrate; (b) forming a photoresist layer 532 on the first metal layer; (c) reflowing the photoresist layer as needed; (d) forming a second metal layer 533 on the semiconductor substrate on which the photoresist layer is formed; (e) separating the second metal layer 533 formed on the photoresist layer and the second metal layer 541 formed on the input / output pad 540 for electrical insulation.

Since the diaphragm formed by this method consists of the 2nd metal layer 533 and the photoresist layer 532, the characteristic with respect to a vibration is mainly determined by the characteristic of a photoresist layer.

FIG. 12 is a view illustrating a manufacturing process of a stacked microphone having a signal processing block according to another embodiment of the present invention shown in FIG. 6.

As shown in FIG. 12, a manufacturing method of a stacked microphone including a signal processing block according to another exemplary embodiment of the present invention includes (a) performing a signal processing block 520 on a semiconductor substrate 510 through a CMOS process. Manufacturing and forming a first metal layer (531) and an input / output pad (540) on a surface of the semiconductor substrate; (b) forming a photoresist layer 532 on the first metal layer 531; (c) reflowing the photoresist layer as needed; (d) forming a second metal layer 533 on the semiconductor substrate on which the photoresist layer is formed; (e) separating the second metal layer 533 formed on the photoresist layer and the second metal layer 541 formed on the input / output pad 540 to electrically insulate the upper portion of the photoresist layer. Forming a plurality of sound holes 534 in the formed second metal layer 533; (f) etching and removing the photoresist layer 532 through the plurality of sound holes 534.

Referring to FIG. 12, the process up to (d) of forming the second metal layer 533 is the same as the manufacturing process illustrated in FIG. 11. Thereafter, (e) a diaphragm in the step of separating the second metal layer 533 formed on the photoresist layer 532 and the second metal layer 541 formed on the input / output pad 540 for electrical insulation. By forming an acoustic hole 534 in the trench and then removing the photoresist layer 532 by etching, a structure in which the first metal layer 531 and the second metal layer 533 are vacant may be formed.

FIG. 13 is a view illustrating a manufacturing process of a stacked microphone having a signal processing block according to another embodiment of the present invention shown in FIG. 10.

As shown in FIG. 13, a manufacturing method of a stacked microphone including a signal processing block according to another embodiment of the present invention includes (a) a signal processing block 520 through a CMOS process on a semiconductor substrate 510. Forming a first metal layer (531) and an input / output pad (540) on a surface of the semiconductor substrate; (b) forming a photoresist layer 532 on the first metal layer 531; (c) reflowing the photoresist layer as needed; (d) forming a second metal layer 533 on the semiconductor substrate on which the photoresist layer is formed; (e) separating the second metal layer 533 formed on the photoresist layer and the second metal layer 541 formed on the input / output pad 540 to electrically insulate the upper portion of the photoresist layer. Forming a plurality of sound holes 534 in the formed second metal layer 533 and forming an adhesive layer 561 for electroplating metal on the semiconductor substrate on which the second metal layer is formed; (f) forming a plating preventing photoresist layer and electroplating a portion where the plating preventing photoresist layer 563 is not formed to form a metal plating layer 562; and (g) forming the plating preventing photoresist layer 563. ) Is removed by etching.

The diaphragm according to this method is composed of the second metal layer 533 and the metal plating layer 562 can be produced in parallel with the deposition and plating.

As described above, the present invention has been described with reference to the embodiments illustrated in the drawings, which are merely exemplary, and it should be understood by those skilled in the art that various modifications and equivalent other embodiments are possible. will be. Therefore, the true technical protection scope of the present invention will be defined by the technical spirit of the appended claims.

1 is a view showing the configuration of a stacked microphone having a signal processing block according to an embodiment of the present invention.

2 is a block diagram of a circuit of a stacked microphone having a signal processing block according to an embodiment of the present invention.

3 is a block diagram of a circuit of a stacked microphone having a signal processing block according to another embodiment of the present invention.

4 is a block diagram of a circuit of a stacked microphone having a signal processing block according to another embodiment of the present invention.

5 is a cross-sectional view of a stacked microphone having a signal processing block according to an embodiment of the present invention.

6 is a cross-sectional view of a stacked microphone having a signal processing block according to another embodiment of the present invention.

7 is a cross-sectional view of a stacked microphone having a signal processing block according to another embodiment of the present invention.

8 is a plan view of a diaphragm of a stacked microphone having a signal processing block according to an embodiment of the present invention.

9 is a side view of a diaphragm of a stacked microphone having a signal processing block according to an embodiment of the present invention.

10 is a cross-sectional view of a stacked microphone having a signal processing block according to another embodiment of the present invention.

FIG. 11 is a view illustrating a manufacturing process of a stacked microphone having a signal processing block according to an embodiment of the present invention shown in FIG. 5.

FIG. 12 is a view illustrating a manufacturing process of a stacked microphone having a signal processing block according to another embodiment of the present invention shown in FIG. 6.

FIG. 13 is a view illustrating a manufacturing process of a stacked microphone having a signal processing block according to another embodiment of the present invention shown in FIG. 10.

Claims (16)

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  5. A signal processing block formed on the semiconductor substrate through a CMOS process;
    A first metal layer formed on the semiconductor substrate and electrically connected to the signal processing block to serve as a lower electrode; And
    It includes a diaphragm formed on the first metal layer,
    The diaphragm is,
    It has a plurality of sound holes (hole), has a circular or polygonal shape, a predetermined space is formed between the diaphragm and the first metal layer, a plurality of anti-reflection vibration holes are formed around the diaphragm Stacked microphone having a signal processing block, characterized in that.
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  9. The method of claim 5,
    Stacked microphone having a signal processing block characterized in that it further comprises an input and output pad for input and output of the signal.
  10. The method of claim 5, wherein the signal processing block
    An amplifier for amplifying the signal of the microphone;
    An analog-digital converter for converting the output signal of the amplifier into a digital signal;
    A digital signal processor for processing the converted digital signal; And
    And a control unit for controlling the operation of the amplifier, the analog-to-digital converter and the digital signal processor.
  11. The method of claim 5, wherein the signal processing block
    An amplifier for amplifying the signal of the microphone;
    An analog filter for filtering the output signal of the amplifier; and
    And a control unit for controlling the operation of the amplifier and the analog filter.
  12. The method of claim 11, wherein the signal processing block
    And a modulation circuit unit for modulating an analog signal which is an output signal of the analog filter.
  13. delete
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  16. delete
KR1020080018083A 2008-02-28 2008-02-28 A stacked microphone having signal process block and manufacturing method thereof KR100878454B1 (en)

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KR1020080018083A KR100878454B1 (en) 2008-02-28 2008-02-28 A stacked microphone having signal process block and manufacturing method thereof
PCT/KR2009/000695 WO2009107940A2 (en) 2008-02-28 2009-02-13 Stacked microphone with signal processing block and method for manufacturing same

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US9499392B2 (en) 2013-02-05 2016-11-22 Butterfly Network, Inc. CMOS ultrasonic transducers and related apparatus and methods
TWI663706B (en) 2013-03-15 2019-06-21 美商蝴蝶網路公司 Complementary metal oxide semiconductor (cmos) ultrasonic transducers and methods for forming the same
TWI661534B (en) 2014-04-18 2019-06-01 美商蝴蝶網路公司 Ultrasonic transducers in complementary metal oxide semiconductor (cmos) wafers and related apparatus and methods
US9067779B1 (en) 2014-07-14 2015-06-30 Butterfly Network, Inc. Microfabricated ultrasonic transducers and related apparatus and methods
US9987661B2 (en) 2015-12-02 2018-06-05 Butterfly Network, Inc. Biasing of capacitive micromachined ultrasonic transducers (CMUTs) and related apparatus and methods
US10196261B2 (en) 2017-03-08 2019-02-05 Butterfly Network, Inc. Microfabricated ultrasonic transducers and related apparatus and methods
CA3064088A1 (en) 2017-06-21 2018-12-27 Butterfly Network, Inc. Microfabricated ultrasonic transducer having individual cells with electrically isolated electrode sections

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Publication number Priority date Publication date Assignee Title
KR100409273B1 (en) * 2001-07-07 2003-12-11 주식회사 비에스이 A chip microphone
KR20040046544A (en) * 2002-11-27 2004-06-05 전자부품연구원 Method for manufacturing acoustic transducer
JP2004223708A (en) 2003-01-23 2004-08-12 Akustica Inc Multi-metal layer mems structure and process to manufacture it
KR100506820B1 (en) 2002-12-31 2005-08-10 전자부품연구원 Method for manufacturing acoustic transducer
KR20080006579A (en) * 2006-01-11 2008-01-16 오스트리아마이크로시스템즈 아게 Mems sensor and production method

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US5573679A (en) * 1995-06-19 1996-11-12 Alberta Microelectronic Centre Fabrication of a surface micromachined capacitive microphone using a dry-etch process
KR100512960B1 (en) * 2002-09-26 2005-09-07 삼성전자주식회사 Flexible MEMS transducer and its manufacturing method, and flexible MEMS wireless microphone
KR100765149B1 (en) * 2005-10-05 2007-10-15 경기도 Micro acoustic sensing apparatus and manufacturing thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100409273B1 (en) * 2001-07-07 2003-12-11 주식회사 비에스이 A chip microphone
KR20040046544A (en) * 2002-11-27 2004-06-05 전자부품연구원 Method for manufacturing acoustic transducer
KR100506820B1 (en) 2002-12-31 2005-08-10 전자부품연구원 Method for manufacturing acoustic transducer
JP2004223708A (en) 2003-01-23 2004-08-12 Akustica Inc Multi-metal layer mems structure and process to manufacture it
KR20080006579A (en) * 2006-01-11 2008-01-16 오스트리아마이크로시스템즈 아게 Mems sensor and production method

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