KR100849384B1 - 나노갭 및 나노갭 센서의 제조방법 - Google Patents

나노갭 및 나노갭 센서의 제조방법 Download PDF

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Publication number
KR100849384B1
KR100849384B1 KR1020060072981A KR20060072981A KR100849384B1 KR 100849384 B1 KR100849384 B1 KR 100849384B1 KR 1020060072981 A KR1020060072981 A KR 1020060072981A KR 20060072981 A KR20060072981 A KR 20060072981A KR 100849384 B1 KR100849384 B1 KR 100849384B1
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Prior art keywords
nanogap
sensor
substrate
nanogap sensor
mask material
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English (en)
Korean (ko)
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KR20070043591A (ko
Inventor
정봉현
김상규
박혜정
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한국생명공학연구원
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Priority to EP06783773A priority Critical patent/EP1938364A4/en
Priority to CN200680011497.0A priority patent/CN101156228B/zh
Priority to US11/887,978 priority patent/US8557567B2/en
Priority to JP2008536478A priority patent/JP2009521332A/ja
Priority to PCT/KR2006/003517 priority patent/WO2007046582A1/en
Publication of KR20070043591A publication Critical patent/KR20070043591A/ko
Application granted granted Critical
Publication of KR100849384B1 publication Critical patent/KR100849384B1/ko
Assigned to (주)미코바이오메드 reassignment (주)미코바이오메드 권리의 전부이전등록 Assignors: 한국생명공학연구원
Assigned to (주) 미코바이오메드 reassignment (주) 미코바이오메드 권리의 전부이전등록 Assignors: (주)미코바이오메드
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/48—Biological material, e.g. blood, urine; Haemocytometers
    • G01N33/50—Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing
    • G01N33/53—Immunoassay; Biospecific binding assay; Materials therefor
    • G01N33/543—Immunoassay; Biospecific binding assay; Materials therefor with an insoluble carrier for immobilising immunochemicals
    • G01N33/54366—Apparatus specially adapted for solid-phase testing
    • G01N33/54373—Apparatus specially adapted for solid-phase testing involving physiochemical end-point determination, e.g. wave-guides, FETS, gratings
    • G01N33/5438—Electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/08—Etching
    • C30B33/10—Etching in solutions or melts
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/48—Biological material, e.g. blood, urine; Haemocytometers
    • G01N33/50—Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing
    • G01N33/53—Immunoassay; Biospecific binding assay; Materials therefor
    • G01N33/575—Immunoassay; Biospecific binding assay; Materials therefor for cancer
    • G01N33/57555—Immunoassay; Biospecific binding assay; Materials therefor for cancer of the prostate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H10P50/244—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials comprising alternated and repeated etching and passivation steps

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  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Immunology (AREA)
  • Molecular Biology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Hematology (AREA)
  • Biomedical Technology (AREA)
  • Urology & Nephrology (AREA)
  • General Health & Medical Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Cell Biology (AREA)
  • Microbiology (AREA)
  • Biotechnology (AREA)
  • Food Science & Technology (AREA)
  • Medicinal Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Micromachines (AREA)
  • Weting (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020060072981A 2005-10-21 2006-08-02 나노갭 및 나노갭 센서의 제조방법 Expired - Fee Related KR100849384B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CN200680011497.0A CN101156228B (zh) 2005-10-21 2006-09-05 一种制作纳米间隙和纳米间隙传感器的方法
US11/887,978 US8557567B2 (en) 2005-10-21 2006-09-05 Method for fabricating nanogap and nanogap sensor
JP2008536478A JP2009521332A (ja) 2005-10-21 2006-09-05 ナノギャップおよびナノギャップセンサの製造方法
PCT/KR2006/003517 WO2007046582A1 (en) 2005-10-21 2006-09-05 A method for fabricating nanogap and nanogap sensor
EP06783773A EP1938364A4 (en) 2005-10-21 2006-09-05 METHOD FOR MANUFACTURING NANO INTERVAL AND NANO INTERVAL SENSOR

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20050099585 2005-10-21
KR1020050099585 2005-10-21

Publications (2)

Publication Number Publication Date
KR20070043591A KR20070043591A (ko) 2007-04-25
KR100849384B1 true KR100849384B1 (ko) 2008-07-31

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KR1020060072981A Expired - Fee Related KR100849384B1 (ko) 2005-10-21 2006-08-02 나노갭 및 나노갭 센서의 제조방법

Country Status (4)

Country Link
US (1) US8557567B2 (https=)
JP (1) JP2009521332A (https=)
KR (1) KR100849384B1 (https=)
CN (1) CN101156228B (https=)

Cited By (2)

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US9030187B2 (en) 2012-11-05 2015-05-12 Samsung Electronics Co., Ltd. Nanogap device and method of processing signal from the nanogap device
US9540234B2 (en) 2012-11-05 2017-01-10 Samsung Electronics Co., Ltd. Nanogap device and method of processing signal from the nanogap device

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US20110020966A1 (en) * 2009-07-23 2011-01-27 Canon Kabushiki Kaisha Method for processing silicon substrate and method for producing substrate for liquid ejecting head
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KR101130084B1 (ko) * 2010-04-28 2012-03-28 연세대학교 산학협력단 수소 센서 및 그 제조방법
WO2011081308A2 (ko) * 2009-12-29 2011-07-07 연세대학교 산학협력단 수소 센서 및 그 제조 방법
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KR101694549B1 (ko) * 2010-10-21 2017-01-09 (주)미코바이오메드 나노 갭 패턴 형성 방법, 나노 갭 패턴을 갖는 바이오 센서 및 바이오 센서 제조 방법
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CN112639466A (zh) * 2018-09-14 2021-04-09 应用材料公司 形成纳米孔的方法及生成的结构
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KR20220147602A (ko) 2020-02-28 2022-11-03 아리조나 보드 오브 리젠츠 온 비하프 오브 아리조나 스테이트 유니버시티 생체고분자를 시퀀싱하는 방법
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Publication number Priority date Publication date Assignee Title
US9030187B2 (en) 2012-11-05 2015-05-12 Samsung Electronics Co., Ltd. Nanogap device and method of processing signal from the nanogap device
US9540234B2 (en) 2012-11-05 2017-01-10 Samsung Electronics Co., Ltd. Nanogap device and method of processing signal from the nanogap device

Also Published As

Publication number Publication date
JP2009521332A (ja) 2009-06-04
US8557567B2 (en) 2013-10-15
CN101156228A (zh) 2008-04-02
US20090215156A1 (en) 2009-08-27
KR20070043591A (ko) 2007-04-25
CN101156228B (zh) 2013-01-30

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