KR100813131B1 - 유동층 반응기를 이용한 다결정 실리콘의 지속 가능한제조방법 - Google Patents

유동층 반응기를 이용한 다결정 실리콘의 지속 가능한제조방법 Download PDF

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Publication number
KR100813131B1
KR100813131B1 KR1020060053826A KR20060053826A KR100813131B1 KR 100813131 B1 KR100813131 B1 KR 100813131B1 KR 1020060053826 A KR1020060053826 A KR 1020060053826A KR 20060053826 A KR20060053826 A KR 20060053826A KR 100813131 B1 KR100813131 B1 KR 100813131B1
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South Korea
Prior art keywords
silicon
reaction
gas
particles
fluidized bed
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Expired - Fee Related
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KR1020060053826A
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English (en)
Korean (ko)
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KR20070119328A (ko
Inventor
김희영
윤경구
박용기
최원춘
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한국화학연구원
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Priority to KR1020060053826A priority Critical patent/KR100813131B1/ko
Application filed by 한국화학연구원 filed Critical 한국화학연구원
Priority to CN2007800087821A priority patent/CN101400835B/zh
Priority to EP07746914.6A priority patent/EP2032746B1/en
Priority to EA200970014A priority patent/EA015219B1/ru
Priority to US12/281,041 priority patent/US8017024B2/en
Priority to JP2009510899A priority patent/JP5219051B2/ja
Priority to PCT/KR2007/002880 priority patent/WO2007145474A1/en
Priority to ES07746914.6T priority patent/ES2470540T3/es
Priority to CA2654896A priority patent/CA2654896C/en
Publication of KR20070119328A publication Critical patent/KR20070119328A/ko
Application granted granted Critical
Publication of KR100813131B1 publication Critical patent/KR100813131B1/ko
Assigned to 주식회사 케이에너지 reassignment 주식회사 케이에너지 권리의 전부이전등록 Assignors: 한국화학연구원
Priority to US12/609,330 priority patent/US8431032B2/en
Expired - Fee Related legal-status Critical Current
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/02—Apparatus characterised by being constructed of material selected for its chemically-resistant properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
    • B01J8/18—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
    • B01J8/1809—Controlling processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
    • B01J8/18—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
    • B01J8/1818—Feeding of the fluidising gas
    • B01J8/1827—Feeding of the fluidising gas the fluidising gas being a reactant
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
    • B01J8/18—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
    • B01J8/1836—Heating and cooling the reactor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
    • B01J8/18—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
    • B01J8/24—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles according to "fluidised-bed" technique
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
    • B01J8/18—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
    • B01J8/24—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles according to "fluidised-bed" technique
    • B01J8/34—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles according to "fluidised-bed" technique with stationary packing material in the fluidised bed, e.g. bricks, wire rings, baffles
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/12—Production of homogeneous polycrystalline material with defined structure directly from the gas state
    • C30B28/14—Production of homogeneous polycrystalline material with defined structure directly from the gas state by chemical reaction of reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
    • B01J2208/00008—Controlling the process
    • B01J2208/00017—Controlling the temperature
    • B01J2208/00389—Controlling the temperature using electric heating or cooling elements
    • B01J2208/00398—Controlling the temperature using electric heating or cooling elements inside the reactor bed
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
    • B01J2208/00008—Controlling the process
    • B01J2208/00017—Controlling the temperature
    • B01J2208/00389—Controlling the temperature using electric heating or cooling elements
    • B01J2208/00407—Controlling the temperature using electric heating or cooling elements outside the reactor bed
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
    • B01J2208/00008—Controlling the process
    • B01J2208/00017—Controlling the temperature
    • B01J2208/00389—Controlling the temperature using electric heating or cooling elements
    • B01J2208/00415—Controlling the temperature using electric heating or cooling elements electric resistance heaters
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
    • B01J2208/00008—Controlling the process
    • B01J2208/00017—Controlling the temperature
    • B01J2208/00477—Controlling the temperature by thermal insulation means
    • B01J2208/00495—Controlling the temperature by thermal insulation means using insulating materials or refractories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
    • B01J2208/00008—Controlling the process
    • B01J2208/00539—Pressure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
    • B01J2208/00796—Details of the reactor or of the particulate material
    • B01J2208/00823—Mixing elements
    • B01J2208/00831—Stationary elements
    • B01J2208/0084—Stationary elements inside the bed, e.g. baffles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
    • B01J2208/00796—Details of the reactor or of the particulate material
    • B01J2208/00991—Disengagement zone in fluidised-bed reactors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/02—Apparatus characterised by their chemically-resistant properties
    • B01J2219/0204—Apparatus characterised by their chemically-resistant properties comprising coatings on the surfaces in direct contact with the reactive components
    • B01J2219/0209—Apparatus characterised by their chemically-resistant properties comprising coatings on the surfaces in direct contact with the reactive components of glass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/02—Apparatus characterised by their chemically-resistant properties
    • B01J2219/0204—Apparatus characterised by their chemically-resistant properties comprising coatings on the surfaces in direct contact with the reactive components
    • B01J2219/0218—Apparatus characterised by their chemically-resistant properties comprising coatings on the surfaces in direct contact with the reactive components of ceramic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/02—Apparatus characterised by their chemically-resistant properties
    • B01J2219/0204—Apparatus characterised by their chemically-resistant properties comprising coatings on the surfaces in direct contact with the reactive components
    • B01J2219/0236—Metal based
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/02—Apparatus characterised by their chemically-resistant properties
    • B01J2219/025—Apparatus characterised by their chemically-resistant properties characterised by the construction materials of the reactor vessel proper
    • B01J2219/0254—Glass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/02—Apparatus characterised by their chemically-resistant properties
    • B01J2219/025—Apparatus characterised by their chemically-resistant properties characterised by the construction materials of the reactor vessel proper
    • B01J2219/0272—Graphite
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/02—Apparatus characterised by their chemically-resistant properties
    • B01J2219/025—Apparatus characterised by their chemically-resistant properties characterised by the construction materials of the reactor vessel proper
    • B01J2219/0277—Metal based
    • B01J2219/029—Non-ferrous metals

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Combustion & Propulsion (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
KR1020060053826A 2006-06-15 2006-06-15 유동층 반응기를 이용한 다결정 실리콘의 지속 가능한제조방법 Expired - Fee Related KR100813131B1 (ko)

Priority Applications (10)

Application Number Priority Date Filing Date Title
KR1020060053826A KR100813131B1 (ko) 2006-06-15 2006-06-15 유동층 반응기를 이용한 다결정 실리콘의 지속 가능한제조방법
CA2654896A CA2654896C (en) 2006-06-15 2007-06-14 Method for continual preparation of polycrystalline silicon using a fluidized bed reactor
EA200970014A EA015219B1 (ru) 2006-06-15 2007-06-14 Способ непрерывного получения поликристаллического кремния с использованием реактора с псевдоожиженным слоем
US12/281,041 US8017024B2 (en) 2006-06-15 2007-06-14 Method for continual preparation of polycrystalline silicon using a fluidized bed reactor
JP2009510899A JP5219051B2 (ja) 2006-06-15 2007-06-14 流動層反応器を用いた多結晶シリコンの連続形成方法
PCT/KR2007/002880 WO2007145474A1 (en) 2006-06-15 2007-06-14 Method for continual preparation of polycrystalline silicon using a fluidized bed reactor
CN2007800087821A CN101400835B (zh) 2006-06-15 2007-06-14 应用流化床反应器连续制备多晶硅的方法
EP07746914.6A EP2032746B1 (en) 2006-06-15 2007-06-14 Method for continual preparation of polycrystalline silicon using a fluidized bed reactor
ES07746914.6T ES2470540T3 (es) 2006-06-15 2007-06-14 Método para la preparación continua de silicio policristalino usando un reactor de lecho fluidizado
US12/609,330 US8431032B2 (en) 2006-06-15 2009-10-30 Method for continual preparation of polycrystalline silicon using a fluidized bed reactor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060053826A KR100813131B1 (ko) 2006-06-15 2006-06-15 유동층 반응기를 이용한 다결정 실리콘의 지속 가능한제조방법

Publications (2)

Publication Number Publication Date
KR20070119328A KR20070119328A (ko) 2007-12-20
KR100813131B1 true KR100813131B1 (ko) 2008-03-17

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Application Number Title Priority Date Filing Date
KR1020060053826A Expired - Fee Related KR100813131B1 (ko) 2006-06-15 2006-06-15 유동층 반응기를 이용한 다결정 실리콘의 지속 가능한제조방법

Country Status (9)

Country Link
US (2) US8017024B2 (https=)
EP (1) EP2032746B1 (https=)
JP (1) JP5219051B2 (https=)
KR (1) KR100813131B1 (https=)
CN (1) CN101400835B (https=)
CA (1) CA2654896C (https=)
EA (1) EA015219B1 (https=)
ES (1) ES2470540T3 (https=)
WO (1) WO2007145474A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190029200A (ko) * 2017-09-12 2019-03-20 주식회사 엘지화학 결정화기
KR102058807B1 (ko) 2015-12-02 2019-12-23 와커 헤미 아게 다결정 실리콘 과립의 제조를 위한 유동상 반응기 및 방법

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* Cited by examiner, † Cited by third party
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KR100783667B1 (ko) * 2006-08-10 2007-12-07 한국화학연구원 입자형 다결정 실리콘의 제조방법 및 제조장치
EP2055375B1 (en) * 2007-10-25 2012-05-02 Mitsubishi Materials Corporation Hydrogen chloride gaz ejecting nozzle, reaction apparatus for producing thrichlorosilane and method for producing trichlorosilane
KR101477817B1 (ko) * 2008-01-25 2014-12-30 미쓰비시 마테리알 가부시키가이샤 반응로 세정 장치
WO2010002815A2 (en) 2008-06-30 2010-01-07 Memc Electronic Materials, Inc. Fluidized bed reactor systems and methods for reducing the deposition of silicon on reactor walls
CN103058194B (zh) 2008-09-16 2015-02-25 储晞 生产高纯颗粒硅的反应器
US7927984B2 (en) * 2008-11-05 2011-04-19 Hemlock Semiconductor Corporation Silicon production with a fluidized bed reactor utilizing tetrachlorosilane to reduce wall deposition
US9023425B2 (en) 2009-11-18 2015-05-05 Rec Silicon Inc Fluid bed reactor
JP5180947B2 (ja) * 2009-12-09 2013-04-10 コスモ石油株式会社 多結晶シリコン製造用の反応炉の洗浄方法
KR20120110109A (ko) * 2009-12-29 2012-10-09 엠이엠씨 일렉트로닉 머티리얼즈, 인크. 주변 실리콘 테트라염화물을 이용하여 반응기 벽 상의 실리콘의 퇴적을 감소시키는 방법
JP5633375B2 (ja) * 2010-01-27 2014-12-03 三菱マテリアル株式会社 トリクロロシラン製造装置
JP5637013B2 (ja) * 2010-03-04 2014-12-10 三菱マテリアル株式会社 トリクロロシラン製造装置及び製造方法
KR101329030B1 (ko) 2010-10-01 2013-11-13 주식회사 실리콘밸류 유동층 반응기
US20120100061A1 (en) 2010-10-22 2012-04-26 Memc Electronic Materials, Inc. Production of Polycrystalline Silicon in Substantially Closed-loop Processes
US20120100059A1 (en) 2010-10-22 2012-04-26 Memc Electronic Materials, Inc. Production of Polycrystalline Silicon By The Thermal Decomposition of Trichlorosilane In A Fluidized Bed Reactor
US8449848B2 (en) 2010-10-22 2013-05-28 Memc Electronic Materials, Inc. Production of polycrystalline silicon in substantially closed-loop systems
US9156705B2 (en) 2010-12-23 2015-10-13 Sunedison, Inc. Production of polycrystalline silicon by the thermal decomposition of dichlorosilane in a fluidized bed reactor
US8849584B2 (en) 2010-12-29 2014-09-30 Sunedison, Inc. Systems and methods for particle size determination and control in a fluidized bed reactor for use with thermally decomposable silicon-containing gas
US8452547B2 (en) * 2010-12-29 2013-05-28 Memc Electronic Materials, Inc. Systems and methods for particle size determination and control in a fluidized bed reactor
US20120183686A1 (en) * 2011-01-19 2012-07-19 Rec Silicon Inc. Reactor system and method of polycrystalline silicon production therewith
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