KR100805599B1 - Organic elcetroluminescence display and making method teherof - Google Patents

Organic elcetroluminescence display and making method teherof Download PDF

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KR100805599B1
KR100805599B1 KR1020070026198A KR20070026198A KR100805599B1 KR 100805599 B1 KR100805599 B1 KR 100805599B1 KR 1020070026198 A KR1020070026198 A KR 1020070026198A KR 20070026198 A KR20070026198 A KR 20070026198A KR 100805599 B1 KR100805599 B1 KR 100805599B1
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light emitting
organic light
electrode
data
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신혜진
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삼성에스디아이 주식회사
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/28Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
    • H01L27/32Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes [OLED]
    • H01L27/3241Matrix-type displays
    • H01L27/3244Active matrix displays
    • H01L27/3276Wiring lines
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/13Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body combined with thin-film or thick-film passive components
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/28Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
    • H01L27/32Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes [OLED]
    • H01L27/3241Matrix-type displays
    • H01L27/3244Active matrix displays

Abstract

An organic electroluminescence display and a method for manufacturing the same are provided to increase a yield of the organic electroluminescence display by preventing pixels from being damaged due to static electricity. An organic electroluminescence display comprises a pixel part(100), a data driving part, a scanning driving part(120), and a discharge capacitor part(140). The pixel part includes a plurality of data lines(D1,D2,....Dm), a plurality of scanning lines, and pixels(101). The plurality of scanning lines are formed by crossing the plurality of data lines. The pixels are connected to the data liens and the scanning lines. The data driving part is connected to the data lines to transmit a data signal. The scanning driving unit is connected to the scanning lines to transmit a scanning signal. The discharge capacitor part is formed in a part where the pixel part and the scanning driving part are connected to each other.

Description

유기전계발광표시장치 및 그의 제조방법{ORGANIC ELCETROLUMINESCENCE DISPLAY AND MAKING METHOD TEHEROF} The organic light emitting display device and a method of manufacturing the same {ORGANIC ELCETROLUMINESCENCE DISPLAY AND MAKING METHOD TEHEROF}

도 1은 일반적인 유기전계발광표시장치의 화소부의 일부를 나타내는 레이아웃도이다. Figure 1 is a layout showing a pixel portion of a general organic light emitting display unit.

도 2는 도 1에 도시된 유기전계발광표시장치의 Ⅱ-Ⅱ'의 단면을 나타내는 단면도이다. 2 is a cross-sectional view showing a section of the Ⅱ-Ⅱ 'of the OLED shown in FIG.

도 3은 본 발명에 따른 유기전계발광표시장치의 구조를 나타내는 구조도이다. 3 is a structural diagram showing a structure of an organic light emitting display device according to the invention.

도 4는 본 발명에 따른 유기전계발광표시장치의 화소부의 레이아웃도이다. Figure 4 is a layout of a pixel portion of an organic light emitting display device according to the present invention.

도 5는 도 4에 도시된 화소부의 회로도이다. 5 is a circuit diagram of the pixel portion shown in Fig.

***도면의 주요부분에 대한 부호 설명*** *** Code Description of the Related Art ***

100: 화소부 101: 화소 100: display unit 101: the pixel

110: 데이터구동부 120: 주사구동부 110: data driver 120: scan driver

130: 전원공급부 140: 방전캐패시터부 130: power supply 140: capacitor discharge unit

본 발명은 유기전계발광표시장치 및 그의 제조방법에 관한 것으로, 더욱 상세히 설명하면, 정전기에 의한 손상을 방지하도록 하는 유기전게발광표시장치 및 그의 제조방법에 관한 것이다. The present invention is an organic light emitting display device will be described and relates to a method of manufacturing the same, and more particularly, relates to an organic light emitting display and a method of producing jeonge that to prevent damage caused by static electricity.

근래에 음극선관과 비교하여 무게와 부피가 작은 각종 평판 표시장치들이 개발되고 있으며 특히 발광효율, 휘도 및 시야각이 뛰어나며 응답속도가 빠른 유기전계발광표시장치가 주목 받고 있다. Recently weights and various flat panel display devices have a small volume as compared to cathode ray tubes have been developed and has received attention in a particular light-emitting efficiency, brightness and viewing angle are excellent fast response speed of organic light emitting display device.

유기전계발광표시장치는 복수의 유기발광다이오드(organic light emitting diode, OLED)를 이용하여 영상을 표현하도록 하는 것으로, 유기발광다이오드는 애노드 전극, 캐소드 전극 및 이들 사이에 위치하여 전자와 정공의 결합에 의하여 발광하는 유기 발광층을 포함한다. That the organic light emitting display device using a plurality of organic light emitting diodes (organic light emitting diode, OLED) to represent an image, the organic light emitting diode includes an anode electrode, a cathode electrode and a combination of electron-hole positioned between these an organic light emitting layer that emits light by.

상기와 같은 유기전계발광표시장치는 유기발광다이오드에 흐르는 전류량이 많은 경우에 고휘도를 표현하고 흐르는 전류량이 적은 경우에 저휘도를 표현하여 유기발광다이오드에 흐르는 전류의 양을 조절하여 계조표현을 하게 된다. The organic light emitting display device as described above is a gray scale expression by controlling the amount of current flowing in the organic light emitting diode to represent a low luminance when the amount of current flowing to express a high luminance in the large amount of current flowing in the organic light emitting diode if small .

도 1은 일반적인 유기전계발광표시장치의 화소부의 일부를 나타내는 레이아웃도이다. Figure 1 is a layout showing a pixel portion of a general organic light emitting display unit. 도 1을 참조하여 설명하면, 4개의 화소가 4X1의 형태로 배열되며 각 화소는 동일한 구조를 하고 있다. Referring to FIG. 1, four pixels are arranged in the form of 4X1 pixels has the same structure.

기판 위에 제 1 트랜지스터(T1)와 제 2 트랜지스터 (T2)가 형성되고 제 1 트랜지스터(T1)와 제 2 트랜지스터(T2) 사이에 스토리지 캐패시터(SC)의 제 1 전극이 형성되며, 스토리지 캐패시터(SC)의 제 1 전극은 제 1 트랜지스터(T1)의 게이트 전극과 제 2 트랜지스터(T2)의 드레인 전극과 연결된다. A first transistor (T1) and the second transistor (T2) on the substrate is formed first the first electrode of the transistor (T1) and the second transistor storage capacitor (SC) between (T2) is formed, and the storage capacitor (SC ) is of the first electrode is connected to the drain electrode of the first transistor (T1) gate electrode and the second transistor (T2) of the. 그리고, 제 1 트랜지스터(T1)의 드레인 전극과 유기발광다이오드(OLED)의 애노드 전극이 연결된다. Then, the anode electrode of the first transistor (T1) the drain electrode and the organic light emitting diode (OLED) is coupled to the.

그리고, 수평방향으로 주사선(S1)이 형성되며 주사선(S1)은 제 2 트랜지스터 (T2)의 게이트 전극과 연결되고, 데이터선(D1)과 제 1 전원선(ELVDD)이 주사선(S)과 수직으로 교차하여 형성된다. And, the horizontal direction scanning line (S1) are formed a scanning line (S1) to the second being connected to the gate electrode of the transistor (T2), the data line (D1) and a first vertical power line (ELVDD) the scanning line (S) It is formed to intersect with.

그리고, 스토리지 캐패시터(SC)의 제 1 전극과 대향되는 위치에 스토리지 캐패시터(SC)의 제 2 전극이 형성되며 제 2 전극은 화소 전원공급선(ELVDD)과 제 1 트랜지스터(T1)의 소스 전극에 연결된다. And, at a position opposite to the first electrode of the storage capacitor (SC) a second electrode of the storage capacitor (SC) is formed in the second electrode is connected to the source electrode of the pixel power supply line (ELVDD) and the first transistor (T1) do.

도 2는 도 1에 도시된 유기전계발광표시장치의 Ⅱ-Ⅱ'의 단면을 나타내는 단면도이다. 2 is a cross-sectional view showing a section of the Ⅱ-Ⅱ 'of the OLED shown in FIG. 도 2를 참조하여 설명하면, 기판(200)상에 버퍼층(201)이 형성되고 버퍼층(201) 상에 폴리실리콘으로 형성되는 활성층(202)이 섬 형상으로 형성된다. Referring to FIG. 2, the active layer 202, which is the buffer layer 201 is formed is formed of polysilicon on the buffer layer 201 on the substrate 200 is formed in an island shape. 그리고, 버퍼층(201)과 활성층(202)의 상부에 제 1 절연막(204)이 형성되고, 제 1 절연막(204)의 상부에 게이트 메탈(205)이 패터닝되어 형성된다. Then, the first insulating film 204 on the top of the buffer layer 201 and the active layer 202 is formed, the formed upper gate metal 205 is patterned on the first insulating film 204. 그리고, 제 1 절연막(204)과 게이트 메탈(205)의 상부에 제 2 절연막(209)이 형성되며, 제 1 절연막(204)과 제 2 절연막(209)에 컨텍홀이 형성되고 컨텍홀을 통해 소스-드레인 메탈이 활성층(202)과 접촉하여 활성층에 소스(202c), 드레인(202c) 및 채널(202b)이 형성된다. And, the two context-hole in the first insulating film 204 and the second insulating film 209 on top of the gate metal 205 is formed, the first insulating film 204 and the second insulating film 209 is formed over the contactor hole the source-drain metal is the active layer 202 into the active layer in contact with the source (202c), a drain (202c) and the channel (202b) is formed. 그리고, 제 2 절연막(209)과 소스-드레인 메탈(210a,210b)의 상부에 제 3 절연막(211)이 형성되며 제 3 절연막(211)의 상부는 평탄화가 된다. Then, the second insulating film 209, and source-drain metal (210a, 210b), the third insulating film 211 is formed on top of the upper portion of the third insulating film 211 is a planarization. 그리고, 제 3 절연막(211)의 상부에 애노드 전극(214)이 패터닝되어 형성되고 또한 제 3 절연막(211)에 컨텍홀이 형성되어 컨텍홀을 통해 애노드 전극(214)이 소스-드레인 메탈에 접촉한다. Then, the anode electrode 214, an upper anode electrode 214 is patterned and forming also a context-hole is formed in the third insulating film 211, the through context-hole of the third insulating film 211. The source-contact with the drain metal do. 그리고, 제 3 절연막(211)과 애노드 전극(214)의 상부에 PDL층(215)과 발광층(216)이 형성되며, 그 상부에 캐소드 전극(217)이 형성된다. Then, the third insulating film 211 and the anode electrode 214, the PDL layer 215 and the light emitting layer 216, the upper is formed of an upper cathode electrode 217 is formed on.

상기와 같이 구성된 유기전계발광표시장치는 주사선을 통해 외부에 발생된 정전기가 유기전계발광표시장치의 내부로 전달될 우려가 있다. The organic light emitting display device constructed as described above has a fear that the generation of static electricity to the outside through the scan line to be passed into the interior of the OLED. 정전기는 고전압을 띄고 있어 주사선을 통해 전달되는 경우 화소에 포함되어 있는 트랜지스터 등이 손상을 받아 화소불량이 발생되어 유기전계발광표시장치를 사용하지 못하게 될 우려가 있다. If static electricity is transferred through the scan line's stand out a high voltage is a pixel defects such as a transistor included in the pixel receives the damage it may possibly be locked out of the organic light emitting display device.

본 발명은 상기 종래 기술의 문제점을 해결하기 위하여 창출된 것으로, 본 발명의 목적은, 정전기에 의한 손상을 방지하는 구조를 구비하여 정전기에 의한 손상을 방지하는 유기전계발광표시장치 및 그의 제조방법을 제공하는 것이다. The present invention is the creation in order to solve the problems of the prior art, an object of the present invention is provided with a structure to prevent damage caused by static electricity organic electroluminescence to prevent damage caused by static display device and the production method thereof to provide.

상기 목적을 달성하기 위하여 본 발명의 제 1 측면은, 복수의 데이터선과 상기 데이터선과 교차하여 형성되는 복수의 주사선과 상기 데이터선 및 상기 주사선에 연결되는 화소를 포함하는 화소부, 상기 데이터선과 연결되어 데이터신호를 전달하는 데이터구동부, 상기 주사선과 연결되어 주사신호를 전달하는 주사구동부 및 상기 화소부와 상기 주사구동부가 연결되는 부분에 형성되는 방전캐패시터부를 포함하는 유기전계발광표시장치를 제공하는 것이다. A first aspect of the present invention to achieve the above object, a pixel portion, is connected to the data line and including a plurality of scanning lines and the data lines and pixels coupled to the scan lines formed by intersecting a plurality of the data line and the data line and a data driver for transmitting a data signal, to provide an organic light emitting display apparatus including the scanning lines and connected to the scan driver for transmitting a scan signal and the pixel portion and the discharge capacitor unit is formed in a portion that is connected to the scan driver.

상기 목적을 달성하기 위하여 본 발명의 제 2 측면은, 유기전계발광표시장치의 제조방법에 있어서, 기판의 소정영역에 폴리실리콘층을 형성하여 트랜지스터의 활성층을 형성할 때 방전캐패시터의 제 1 전극을 형성하는 단계 및 게이트 메탈을 형성하여 주사선과 상기 스토리지 캐패시터의 제 2 전극 및 상기 방전캐패시터의 제 2 전극을 형성하는 단계를 포함하는 유기전계발광표시장치의 제조방법을 제공하는 것이다. In the production method of the second aspect of the invention, an organic light emitting display device in order to attain the object, a first electrode of a discharge capacitor when forming a polysilicon layer on a predetermined region of the substrate to form the transistor active layer to form to form the gate metal, and to provide a scanning line and a second electrode, and a method of manufacturing an organic light emitting display device includes forming a second electrode of the discharge capacitor of the storage capacitor.

이하, 본 발명의 실시예를 첨부한 도면을 참조하여 설명하면 다음과 같다. Hereinafter, it will be described with reference to the accompanying drawings, an embodiment of the present invention.

도 3은 본 발명에 따른 유기전계발광표시장치의 구조를 나타내는 구조도이다. 3 is a structural diagram showing a structure of an organic light emitting display device according to the invention. 도 3을 참조하여 설명하면, 화소부(100), 데이터구동부(110), 주사구동부(120), 전원공급부(130) 및 방전캐패시터부(140)를 포함한다. Referring to Figure 3, a display unit 100, a data driver 110, a scan driver 120, a power supply unit 130 and discharge the capacitor 140.

화소부(100)는 복수의 화소(101)가 배열되고 각 화소(101)에 전류의 흐름에 대응하여 빛을 발광하는 유기발광다이오드(미도시)를 포함한다. The display unit 100 comprises an organic light emitting diode (not shown) for emitting light corresponding to flow of current to the respective pixels 101, a plurality of pixels 101 are arranged. 그리고, 행방향으로 형성되며 주사신호를 전달하는 n 개의 주사선(S1,S2,...Sn-1,Sn)과 열방향으로 형성되며 데이터신호를 전달하는 m 개의 데이터선(D1, D2,....Dm-1, Dm)이 배열된다. And, n of scanning lines formed in the row direction it is transmitted to the scanning signal (S1, S2, ... Sn-1, Sn) and is formed in a column direction, m data lines for transmitting data signals (D1, D2 ,. ... it is arranged in the Dm-1, Dm). 또한, 제 1 전원(ELVDD)과 제 2 전원(ELVSS)을 전원공급부(130)으로부터 전달받아 구동한다. Further, the driving by receiving a first power source (ELVDD) and second power source (ELVSS) from the power supply unit 130. 따라서, 화소부(101)는 주사신호, 데이터신호, 제 1 전원(ELVDD) 및 제 2 전원(ELVSS)에 의해 유기발광다이오드가 발광하여 영상을 표시 한다. Accordingly, the pixel unit 101 displays an image by light emitting the organic light emitting diode by the scan signals, the data signals, the first power source (ELVDD) and second power (ELVSS).

데이터구동부(110)는 화소부(100)에 데이터 신호를 인가하는 수단으로, 적색, 청색, 녹색의 성분을 갖는 비디오 데이터를 입력받아 데이터신호를 생성한다. The data driver 110 is a means for applying data signals to the display unit 100, receives the red, blue and green components of the video data having to generate a data signal. 그리고, 데이터구동부(110)는 화소부(100)의 데이터선(D1, D2,....Dm-1, Dm)과 연결되어 생성된 데이터 신호를 화소부(100)에 인가한다. The data driver 110 applies the data signal generator is connected to the data on the display unit 100, the line (D1, D2, .... Dm-1, Dm), the display unit 100.

주사구동부(120)는 화소부(100)에 주사신호를 인가하는 수단으로, 주사구동부(120)는 주사선(S1,S2,...Sn-1,Sn)에 연결되어 주사신호를 화소부(100)의 특정한 행에 전달한다. The scan driver 120 to be connected to a means for applying a scanning signal to the display unit 100, the scan driver 120 includes a scan line (S1, S2, ... Sn-1, Sn), the scan signal display unit ( 100) is transmitted to the particular row. 주사신호가 전달된 화소(101)에는 데이터구동부(110)에서 출력된 데이터신호가 전달된다. Pixel 101 of a scan signal is passed, is transmitted, the data signal output from the data driver 110.

그리고, 주사신호가 전달된 화소부(100)의 특정한 행에는 데이터구동부(110)에서 입력되는 데이터 신호가 인가되어 각 화소는 데이터신호에 대응되는 전류가 흐르게 된다. Then, the specific row of the display unit 100, a scan signal is applied to the transmission data signal input from the data driver 110. Each pixel is caused to flow a current corresponding to the data signal.

전원공급부(130)는 화소부(100)에 제 1 전원(ELVDD)과 제 2 전원(ELVSS)를 전달하는 수단으로 외부에서 전원을 전달받아 제 1 전원(ELVDD)과 제 2 전원(ELVSS)을 생성하여 화소부(100)에 전달한다. Power supply unit 130 is a first power source (ELVDD) and second power (ELVSS), the first power source (ELVDD) and second power supply means receives the external power supply to pass (ELVSS) to the display unit 100 It generates and transmits to the display unit 100.

방전캐패시터부(140)는 각 주사선에 캐패시터가 연결되어 있는 구조를 가지며, 주사구동부(120)와 화소부(100)의 주사선(S1,S2,...Sn-1,Sn)이 연결되는 부분에 형성된다. Discharge capacitor unit 140 portion in which the scan lines (S1, S2, ... Sn-1, Sn) in having a structure in which the capacitor is connected, the scan driver 120 and the display unit 100 connected to each scan line It is formed on. 방전캐패시터부(140)의 각 캐패시터들은 정전기가 외부에서 주사선(S1,S2,...Sn-1,Sn)을 통해 전달되는 경우 정전기를 충전하며 충전된 전하를 방전시켜 화소부(100)의 각 화소(101)로 정전기가 전달되는 것을 방지하여 화소(101) 를 보호하도록 한다. Each capacitor of the discharge capacitor unit 140 are the display unit 100 to charge the static electricity and discharges the electric charge charged when static electricity is outside the scanning line (S1, S2, ... Sn-1, Sn) transmitted through the and to protect the pixel 101 to prevent the static electricity is transmitted to the pixels 101. the 방전캐패시터부(140)가 방전하는 과정은 방전캐패시터부(140)의 캐패시터들의 제 1 전극과 제 2 전극 사이의 유전체의 폭이 작아 고전압의 정전기가 각 캐패시터에 전달되면 유전체가 정전기에 의해 터져 각 캐패시터들이 화소(101)에 전달될 정전기에 의한 손상을 대신 받아 화소(101)를 보호하게 된다. If the discharge capacitor unit 140, the process of discharge of the dielectric between the capacitor first electrode and the second electrode of the discharge capacitor unit 140, the width reduces the high-voltage static electricity transmitted to each capacitor dielectric is blown out by the static angle It is a capacitor to protect the pixel 101 receives the place of damage due to static electricity to be transmitted to the pixels 101. 또한, 주사구동부(120)는 주사선과 연결될 때 방전캐패시터부(140)가 형성된 부분보다 더 안쪽에 형성되어 방전캐패시터부(140)가 정전기에 의한 손상을 받은 경우에도 주사선을 통해 주사신호의 전달에 지장없게 한다. In addition, the transmission of the scan signal through the scan line in the scan driver 120 is formed on the inside more than the portion to discharge the capacitor 140, coupled with the scan lines formed when the discharge capacitor unit 140 has received a damage due to static electricity It should not interfere.

도 4는 본 발명에 따른 유기전계발광표시장치의 화소부의 레이아웃도이고, 도 5는 도 4에 도시된 화소부의 회로도이다. Figure 4 is a layout of a pixel portion of an organic light emitting display device according to the invention, Figure 5 is a circuit diagram of the pixel portion shown in Fig. 도 4 및 도 5를 참조하여 설명하면, 4개의 화소가 4X1의 형태로 배열되며 각 화소는 동일한 구조를 하고 있다. 4 and will be described with reference to Figure 5, four pixels are arranged in the form of 4X1 pixels has the same structure.

기판 위의 소정의 영역에 폴리실리콘층(400)을 형성된다. In a predetermined area of ​​a substrate it is formed of the polysilicon layer 400. 폴리실리콘층은 제 1 트랜지스터(M1)와 제 2 트랜지스터(M2)의 활성층 및 방전캐패시터의 제 1 전극이 된다. The polysilicon layer is the first electrode of the active layer and discharging the capacitor of the first transistor (M1) and the second transistor (M2). 폴리 실리콘층(400)의 상부에 절연막(미도시)이 형성되며, 그 상부에 게이트 메탈(410)이 형성되며 게이트 메탈(410)은 제 1 트랜지스터(M1)와 제 2 트랜지스터(M2)의 게이트 전극, 주사선(S), 스토리지 캐패시터(Cst)의 제 1 전극이 된다. Poly and the upper insulating film (not shown) formed on the silicon layer 400, on its top gate metal 410 is formed a gate metal 410 of the first transistor (M1) and the second transistor (M2), the gate is the first electrode of the electrodes, the scan lines (S), the storage capacitor (Cst). 그리고, 그 상부에 절연막(미도시)이 형성된다. Then, the upper insulating film (not shown) is formed on. 게이트 메탈(410) 중 주사선(S)이 되는 게이트 메탈(410)은 방전 캐패시터(Cv)의 제 1 전극과 겹쳐지는 영역이 생기며 방전캐패시터(Cv)의 제 2 전극이 된다. Gate metal 410 is a scanning line (S) of the gate metal 410 is Ie, the region overlapping with the first electrode of the discharge capacitor (Cv) is the second electrode of the discharge capacitor (Cv). 그리고, 그 상부에 소스 드레인 메탈(420)이 형성되어 제 1 트랜지스터(M1)와 제 2 트랜지스터(M2)의 소스와 드레 인 전극, 데이터선, 전원선 및 스토리지 캐패시터(Cst)이 된다. Then, the top source drain metal 420 is formed to be the first transistor (M1) and a second transistor of the electrodes, data lines, power lines and the storage capacitor (Cst) of the source and drain (M2). 그리고, 그 상부의 소정 영역에 유기발광다이오드(OLED)가 형성된다. Then, the organic light emitting diode (OLED) is formed on a predetermined region of the upper.

따라서, 방전캐패시터(Cv)가 구현되어 화소가 보호될 수 있다. Therefore, the discharge capacitor (Cv) is implemented may be a pixel to be protected.

본 발명에 따른 유기전계발광표시장치 및 그의 제조방법에 의하면, 정전기 방지구조가 추가되어 정전기에 의한 손상을 방지할 수 있어, 제조과정 등에서 발생하는 정전기에 의해 화소가 손상되는 것을 방지할 수 있어 유기전계발광표시장치의 수율이 높아지도록 한다. According to the organic light emitting display and a method of manufacturing according to the present invention, the addition of anti-static structure can be prevented from being damaged by static electricity, it is possible to prevent the pixels are damaged by static electricity generated in the manufacturing process of organic and so increases the yield of the light emitting display.

본 발명의 바람직한 실시예가 특정 용어들을 사용하여 기술되어 왔지만, 그러한 기술은 단지 설명을 하기 위한 것이며, 다음의 청구범위의 기술적 사상 및 범위로부터 이탈되지 않고 여러 가지 변경 및 변화가 가해질 수 있는 것으로 이해되어져야 한다. It came is the preferred embodiment of the present invention have been described using specific terms, such techniques are for illustration only, without departing from the spirit and scope of the following claims is understood to be applied a number of modifications and variations It should be.

Claims (6)

  1. 복수의 데이터선과 상기 데이터선과 교차하여 형성되는 복수의 주사선과 상기 데이터선 및 상기 주사선에 연결되는 화소를 포함하는 화소부; A plurality of data lines and a pixel portion including pixels a plurality of scanning lines formed to cross the data lines and coupled to the data lines and the scan lines;
    상기 데이터선과 연결되어 데이터신호를 전달하는 데이터구동부; The data driver is connected to the data line and passes the data signal;
    상기 주사선과 연결되어 주사신호를 전달하는 주사구동부; Scan driver which is connected to the scanning lines pass the scanning signal; And
    상기 화소부와 상기 주사구동부가 연결되는 부분에 형성되는 방전캐패시터부를 포함하는 유기전계발광표시장치. The organic light emitting display device including a discharge is formed in a portion on which the pixel portion and the scan driver connected to a capacitor.
  2. 제 1 항에 있어서, According to claim 1,
    상기 화소는 The pixel
    상기 화소부의 소정의 영역에 패터닝되어 형성되는 폴리실리콘층; A polysilicon layer that is formed by patterning the predetermined region of the pixel portion;
    상기 폴리실리콘층의 상부에 형성되는 제 1 절연막; A first insulating film formed on the polysilicon layer;
    상기 제 1 절연막의 상부에 형성되며 주사선과 연결되는 게이트메탈; Gate metal is formed on the first insulating film and connected to the scan line;
    상기 게이트메탈 상부에 형성되는 제 2 절연막; A second insulating film formed on said gate metal thereon; And
    컨텍홀을 통해 상기 폴리실리콘층에 접촉하는 소스-드레인 메탈을 포함하는 유기전계발광표시장치. The organic light emitting display device including a metal drain-to-source contact to the polysilicon layer through the hole context.
  3. 제 2 항에 있어서, 3. The method of claim 2,
    상기 방전캐패시터부는 하나의 주사선에 하나의 방전캐패시터가 형성되며, The capacitor discharge unit that discharges one of the capacitors is formed on one scanning line,
    상기 방전캐패시터는 제 1 전극은 상기 폴리실리콘 중 상기 화소부의 외곽에 형성되는 폴리실리콘에 의해 형성되고, 제 2 전극은 상기 폴리실리콘층에 대향되는 상기 주사선에 의해 형성되는 유기전계발광표시장치. The discharge capacitor comprises a first electrode is formed by a polysilicon is formed on the outside of the pixel portion of the polysilicon, and a second electrode of the organic light emitting display device formed by the scanning line is opposite to the polysilicon layer.
  4. 유기전계발광표시장치의 제조방법에 있어서, In the production method of an organic light emitting display device,
    기판의 소정영역에 폴리실리콘층을 형성하여 트랜지스터의 활성층을 형성할 때 방전캐패시터의 제 1 전극을 형성하는 단계; To form a polysilicon layer on a predetermined area of ​​the substrate forming the active layer of a transistor forming a first electrode of a discharge capacitor; And
    게이트 메탈을 형성하여 주사선과 상기 스토리지 캐패시터의 제 2 전극 및 상기 방전캐패시터의 제 2 전극을 형성하는 단계를 포함하는 유기전계발광표시장치의 제조방법. A second electrode and a method of manufacturing an organic light emitting display device includes forming a second electrode of the discharge of the capacitor to form a gate metal scan line and the storage capacitor.
  5. 제 4 항에 있어서, 5. The method of claim 4,
    상기 방전캐패시터는 주사신호를 전달하는 주사구동부와 인접한 영역에 형성되는 유기전계발광표시장치의 제조방법. The discharge capacitor manufacturing method of an organic light emitting display device formed on a region adjacent to a scan driver for transmitting scan signals.
  6. 제 7 항에 있어서, The method of claim 7,
    상기 방전캐패시터는 제 1 전극은 상기 폴리실리콘 중 화소부의 외곽에 형성되는 폴리실리콘에 의해 형성되고, 제 2 전극은 상기 폴리실리콘층에 대향되는 상기 주사선에 의해 형성되는 유기전계발광표시장치의 제조방법. The discharge capacitor comprises a first electrode is formed by the polysilicon formed on the outside of the pixel portion of the polysilicon, and a second electrode of the method of manufacturing an organic light emitting display device formed by the scanning line is opposite to the polysilicon layer, .
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050000162A (en) * 2003-06-23 2005-01-03 엘지.필립스 엘시디 주식회사 FPD and the bias aging method for PMOS device
KR20060044716A (en) * 2004-03-26 2006-05-16 가시오게산키 가부시키가이샤 Image reading apparatus, the image reading system equipped with the image reading apparatus

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2603716B2 (en) * 1989-02-22 1997-04-23 シャープ株式会社 Active matrix display device
US5313319A (en) * 1992-06-17 1994-05-17 General Electric Company Active array static protection devices
JPH0980469A (en) * 1995-09-13 1997-03-28 Toshiba Corp Display device with surge voltage protective function
JP4179483B2 (en) * 1996-02-13 2008-11-12 株式会社半導体エネルギー研究所 The method for manufacturing a display device
DE69841721D1 (en) * 1997-02-17 2010-07-29 Seiko Epson Corp display device
JP2000267137A (en) * 1999-03-18 2000-09-29 Toshiba Corp Liquid crystal display device
KR100598735B1 (en) * 1999-09-21 2006-07-10 엘지.필립스 엘시디 주식회사 Stactic Electricity Prevention Circuit of Liquid Crystal Display
US6825496B2 (en) * 2001-01-17 2004-11-30 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US6861810B2 (en) * 2001-10-23 2005-03-01 Fpd Systems Organic electroluminescent display device driving method and apparatus
JPWO2004040545A1 (en) * 2002-10-29 2006-03-02 東芝松下ディスプレイテクノロジー株式会社 Flat-panel display device
JP2005032704A (en) * 2003-06-18 2005-02-03 Sharp Corp Display element and display device
JP4374950B2 (en) * 2003-08-29 2009-12-02 セイコーエプソン株式会社 Electro-optical device and electronic equipment
JP2005196075A (en) * 2004-01-09 2005-07-21 Fuji Electric Holdings Co Ltd Color conversion type color display and control method for the color conversion type color display
CN100399133C (en) 2004-03-15 2008-07-02 友达光电股份有限公司 LCD panel protective circuit and LCD
JP4466230B2 (en) * 2004-06-25 2010-05-26 セイコーエプソン株式会社 Electro-optical device and electronic equipment
KR100752368B1 (en) 2004-11-15 2007-08-27 삼성에스디아이 주식회사 Flat panel display device and fabricating method of the same
JP2006267545A (en) * 2005-03-24 2006-10-05 Sanyo Epson Imaging Devices Corp Electrooptical apparatus and electronic equipment

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050000162A (en) * 2003-06-23 2005-01-03 엘지.필립스 엘시디 주식회사 FPD and the bias aging method for PMOS device
KR20060044716A (en) * 2004-03-26 2006-05-16 가시오게산키 가부시키가이샤 Image reading apparatus, the image reading system equipped with the image reading apparatus

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