KR100805287B1 - Thin film transistor substrate, substrate for liquid crystal display and manufacturing method of substrate for liquid crystal display - Google Patents

Thin film transistor substrate, substrate for liquid crystal display and manufacturing method of substrate for liquid crystal display Download PDF

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KR100805287B1
KR100805287B1 KR1020020033793A KR20020033793A KR100805287B1 KR 100805287 B1 KR100805287 B1 KR 100805287B1 KR 1020020033793 A KR1020020033793 A KR 1020020033793A KR 20020033793 A KR20020033793 A KR 20020033793A KR 100805287 B1 KR100805287 B1 KR 100805287B1
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South Korea
Prior art keywords
substrate
liquid crystal
formed
crystal display
display device
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KR1020020033793A
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Korean (ko)
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KR20030003004A (en
Inventor
고모리타아키라
곤도나오토
다노세도모노리
다카기다카시
미사키가츠노리
사와사키마나부
시바사키마사카즈
오다도모시게
이노우에유이치
후지카와데츠야
히로타시로
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샤프 가부시키가이샤
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Priority to JPJP-P-2001-00199313 priority Critical
Priority to JP2001199313 priority
Priority to JP2002119774A priority patent/JP4041336B2/en
Priority to JPJP-P-2002-00119774 priority
Application filed by 샤프 가부시키가이샤 filed Critical 샤프 가부시키가이샤
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    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/1368Active matrix addressed cells in which the switching element is a three-electrode device
    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1339Gaskets; Spacers; Sealing of cells
    • G02F1/13392Gaskets; Spacers; Sealing of cells spacers dispersed on the cell substrate, e.g. spherical particles, microfibres
    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136209Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element

Abstract

SUMMARY OF THE INVENTION An object of the present invention is to provide a liquid crystal display device substrate, a liquid crystal display device having the same, and a method of manufacturing the same, which can be used in a display unit such as an information device and can obtain a display device having high luminance and good display characteristics. Each pixel is defined by a gate bus line 25 extending in the left and right directions and a drain bus line 26 extending in the vertical direction. In the vicinity of the intersection position of each bus line 25 and 26, a TFT is formed, and the resin superimposition part 32 which shields a TFT is formed in the upper part. BM is not formed on the common electrode substrate disposed opposite to the TFT substrate 8, and each of the bus lines 25 and 26 and the resin overlap portion 32 formed on the TFT substrate 8 exhibit the function of the BM. have.
LCD, Substrate, TFT, BM, Black Matrix, Color Filter

Description

TIN FILM TRANSISTOR SUBSTRATE, SUBSTRATE FOR LIQUID CRYSTAL DISPLAY AND MANUFACTURING METHOD OF SUBSTRATE FOR LIQUID CRYSTAL DISPLAY}

BRIEF DESCRIPTION OF THE DRAWINGS The figure which shows the structure of the liquid crystal display device which concerns on 1st Embodiment of this invention.

Fig. 2 is a cross-sectional view showing a first basic configuration of a substrate for a liquid crystal display device and a liquid crystal display device having the same according to the first embodiment of the present invention.

Fig. 3 is a cross-sectional view showing a modification of the first basic configuration of the liquid crystal display device substrate and the liquid crystal display device having the same according to the first embodiment of the present invention.

4 is a cross-sectional view showing a second basic configuration of a liquid crystal display device substrate and a liquid crystal display device having the same according to the first embodiment of the present invention.

Fig. 5 shows a third basic configuration of a substrate for a liquid crystal display device according to the first embodiment of the present invention.

Fig. 6 is a diagram showing a third basic configuration of a substrate for a liquid crystal display device according to the first embodiment of the present invention.

Fig. 7 is a diagram showing the configuration of a liquid crystal display device according to Example 1-1 of the first embodiment of the present invention.                 

Fig. 8 is a diagram showing the configuration of a liquid crystal display device according to Example 1-1 of the first embodiment of the present invention.

Fig. 9 is a diagram showing the configuration of a substrate for a liquid crystal display device according to Example 1-1 of the first embodiment of the present invention.

Fig. 10 is a sectional view showing the structure of a substrate for a liquid crystal display device according to Example 1-1 of the first embodiment of the present invention.

Fig. 11 is a cross sectional view showing the manufacturing method of the substrate for liquid crystal display device according to Example 1-1 of the first embodiment of the present invention.

Fig. 12 is a cross sectional view showing the manufacturing method of the substrate for liquid crystal display device according to Example 1-1 of the first embodiment of the present invention.

Fig. 13 is a cross sectional view showing the manufacturing method of the substrate for liquid crystal display device according to Example 1-1 of the first embodiment of the present invention.

Fig. 14 is a cross sectional view showing the manufacturing method of the substrate for liquid crystal display device according to Example 1-1 of the first embodiment of the present invention.

Fig. 15 is a cross sectional view showing the manufacturing method of the substrate for liquid crystal display device according to Example 1-1 of the first embodiment of the present invention.

Fig. 16 is a cross sectional view showing the manufacturing method of the substrate for liquid crystal display device according to Example 1-1 of the first embodiment of the present invention.

Fig. 17 is a sectional view showing the structure of a liquid crystal display device according to example 1-2 of the first embodiment of the present invention.                 

Fig. 18 is a sectional view showing the structure of a liquid crystal display device according to example 1-2 of the first embodiment of the present invention.

Fig. 19 is a diagram showing the configuration of a substrate for a liquid crystal display device according to Examples 1-3 of the first embodiment of the present invention.

Fig. 20 is a sectional view showing the structure of a liquid crystal display substrate according to Examples 1-3 of the first embodiment of the present invention.

Fig. 21 is a cross sectional view showing the manufacturing method of the substrate for liquid crystal display device according to Example 1-3 of the first embodiment of the present invention.

Fig. 22 is a cross sectional view showing the manufacturing method of the substrate for liquid crystal display device according to Example 1-3 of the first embodiment of the present invention.

Fig. 23 is a diagram showing the configuration of a substrate for a liquid crystal display device according to Example 2-1 of the second embodiment of the present invention.

Fig. 24 is a cross sectional view showing the structure of a liquid crystal display device according to example 2-2 of the second embodiment of the present invention.

Fig. 25 is a diagram showing the configuration of a liquid crystal display device according to example 3-1 of the third embodiment of the present invention.

Fig. 26 is a sectional view showing the structure of a liquid crystal display device according to example 3-1 of the third embodiment of the present invention.

Fig. 27 shows a method for manufacturing a liquid crystal display device according to example 3-1 of the third embodiment of the present invention.                 

Fig. 28 shows a method for manufacturing a liquid crystal display device according to example 3-1 of the third embodiment of the present invention.

Fig. 29 shows a method for manufacturing a liquid crystal display device according to example 3-1 of the third embodiment of the present invention.

Fig. 30 is a diagram showing the manufacturing method of the liquid crystal display device according to example 3-1 of the third embodiment of the present invention.

Fig. 31 is a cross sectional view showing the manufacturing method of the liquid crystal display device according to Example 3-1 of the third embodiment of the present invention.

Fig. 32 is a cross sectional view showing the manufacturing method of the liquid crystal display device according to Example 3-1 of the third embodiment of the present invention.

Fig. 33 is a cross sectional view showing the manufacturing method of the liquid crystal display device according to Example 3-1 of the third embodiment of the present invention.

Fig. 34 is a sectional view showing the structure of a liquid crystal display device according to example 3-2 of the third embodiment of the present invention.

35 is a view showing the configuration of a conventional liquid crystal display device.

36 is a cross-sectional view showing a configuration of a conventional liquid crystal display device.

Fig. 37 is a sectional view showing the structure of a conventional liquid crystal display device.

38 is a cross-sectional view showing a configuration of a conventional liquid crystal display device.

Fig. 39 is a sectional view showing the structure of a conventional liquid crystal display device.

40 is a cross-sectional view showing a configuration of a conventional liquid crystal display device.                 

Fig. 41 is a sectional view showing the structure of a conventional liquid crystal display device.

Fig. 42 is a cross-sectional view showing a modification of the structure of a liquid crystal display device according to example 1-2 of the first embodiment of the present invention.

※ Explanation of code about main part of drawing ※

8: TFT substrate 10: common electrode substrate

12 and 12 'glass substrate 14 pixel electrode

18: common electrode 20: slit

21: fine slit 24: insulating film

25: gate bus line 26: drain bus line

28: linear projection 29: projection

30: columnar spacer 32: resin overlap

34: Frame pattern 36: Mark for positioning

38: display area 40: frame area

42, 66: TFT 44: drain electrode

46: source electrode 48: channel protective film

50, 51: contact hole 52: operation semiconductor layer

54 SiN Film 56 Dielectric Layer

58: Cr film 60: resin layer

62: storage capacitor bus line 64: storage capacitor electrode

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate for a liquid crystal display device constituting a liquid crystal display device used for a display portion such as an information device, a liquid crystal display device having the same, and a manufacturing method thereof.

Generally, a liquid crystal display device has two board | substrates provided with the transparent electrode, and the liquid crystal sealed between both board | substrates. A desired display can be obtained by applying a voltage between both transparent electrodes to drive the liquid crystal and controlling the transmittance of light. An active matrix liquid crystal display device is composed of a TFT substrate on which a thin film transistor (TFT) for switching each pixel is formed, and a common electrode substrate on which a common electrode is formed. Recently, the demand for liquid crystal display devices has increased, and the demand for liquid crystal display devices has also diversified. In particular, there is a strong demand for improvement of visual characteristics and display quality, and as a means of realizing this, a liquid crystal display device of VA (Vertically Aligned) mode (vertical alignment type) is promising.

The liquid crystal display device of VA mode is comprised from two board | substrates with which the perpendicular | vertical alignment process was performed to the opposing surface, and the liquid crystal which has the negative dielectric anisotropy sealed between both board | substrates. The liquid crystal molecules of the liquid crystal have a property of homeotropic alignment, and when no voltage is applied between both electrodes, the liquid crystal molecules are aligned substantially perpendicular to the substrate surface. When a predetermined voltage is applied between both electrodes, the substrate is oriented substantially horizontally, and when a voltage smaller than the voltage is applied, the substrate is inclined at an angle to the substrate surface.                         

In addition, in view of improving the visual characteristics of the liquid crystal display device, a liquid crystal display device of a multi-domain vertical alignment (MVA) method has recently been attracting attention. In the MVA method, the inside of a pixel is divided into a plurality of regions by using an alignment regulating structure (domain regulation means) such as linear protrusions or slits provided on both substrates, and the orientation is divided so that the inclination directions of the liquid crystal molecules are different for each region. Is doing.

Fig. 35 shows the configuration of the MVA type liquid crystal display device, and shows the arrangement of the linear protrusions formed on both substrates as the alignment regulating structure. In Fig. 35, three pixels of R (red), G (green), and B (blue) are shown. As shown in FIG. 35, the linear protrusion 104 is formed on the TFT substrate 108, and the linear protrusion 106 is formed on the common electrode substrate 110. The linear protrusions 104 and 106 are formed obliquely with respect to the pixel. Each pixel region of R, G, and B is defined by a light blocking film (BM; Black Matrix) 102 formed on the common electrode substrate 110. In addition, the BM 102 shields the storage capacitor bus lines (not shown) and the storage capacitor electrodes (not shown) that cross the substantially center of each pixel.

36 is a cross-sectional view of the liquid crystal display device taken along the line X-X of FIG. 35. As shown in FIG. 36, the TFT substrate 108 has a pixel electrode 114 formed for each pixel on the glass substrate 112. In addition, illustration of the insulating film, drain bus line, protective film, etc. which were formed on the glass substrate 112 is abbreviate | omitted. The linear protrusion 104 is formed on the pixel electrode 114. The vertical alignment layer 116 is formed on the entire surface of the pixel electrode 114 and the linear protrusion 104. On the other hand, the common electrode substrate 110 has a BM 102 formed on the glass substrate 112. In addition, resin color filter (CF) layers R, G, and B (only G and B in FIG. 36) are formed for each pixel region defined by the BM 102 on the glass substrate 112. have. The common electrode 118 is formed on the resin CF layers R, G, and B, and the linear protrusion 106 is formed on the common electrode 118. In addition, a vertical alignment layer 116 is formed on the entire surface of the common electrode 118 and the linear protrusion 106. Between the TFT substrate 108 and the common electrode substrate 110, a spherical spacer 122 made of plastic or glass and a liquid crystal (eg, glass or the like) which maintain a gap (cell gap) between the substrates 108 and 110. LC) is sealed.

FIG. 37 is a cross-sectional view of the liquid crystal display device taken along the line Y-Y in FIG. 35 and shows the state of the liquid crystal LC when no voltage is applied. As shown in FIG. 37, the liquid crystal molecules (shown as cylinders in the figure) are oriented substantially perpendicular to the vertical alignment film 116 on both substrates 108 and 110. Accordingly, the liquid crystal molecules in the region where the linear protrusions 104 and 106 are formed are oriented substantially perpendicular to the surface of the linear protrusions 104 and 106, and are slightly inclined with respect to the normals of both substrates 108 and 110. have. Since the polarizing plate (not shown) is arrange | positioned in the state of cross nicol on the outer side of both board | substrates 108 and 110, a black display can be obtained at the time of no voltage application.

FIG. 38 is a cross-sectional view of the liquid crystal display device taken along the line Y-Y of FIG. 35 similarly to FIG. 37, and shows the state of the liquid crystal LC at the time of voltage application. The broken line in the figure shows the electric field lines between the pixel electrode 114 and the common electrode 118. As shown in FIG. 38, when a voltage is applied between the pixel electrode 114 and the common electrode 118, the electric field is distorted near the linear protrusions 104 and 106 made of a dielectric. As a result, the inclination direction of the liquid crystal molecules having negative dielectric anisotropy is regulated, and the gray scale display can be obtained by controlling the inclination angle according to the electric field intensity.

At this time, the liquid crystal molecules in the vicinity of the linear protrusions 104 and 106 are linear protrusions around the linear protrusions 104 and 106 when the linear protrusions 104 and 106 are installed linearly as shown in FIG. Inclined in two directions orthogonal to the direction in which 104 and 106 extend. Since the liquid crystal molecules near the linear protrusions 104 and 106 are slightly inclined than the directions perpendicular to both the substrates 108 and 110 even in the absence of voltage, the liquid crystal molecules are inclined in response to the electric field strength quickly. As a result, the direction in which the surrounding liquid crystal molecules are also inclined in accordance with their behavior is determined in turn, and inclined in accordance with the electric field strength, so that the alignment division around the linear protrusions 104 and 106 is realized.

FIG. 39 is a cross-sectional view taken along the line Y-Y of the liquid crystal display shown in FIG. 35 in which the slits 120 are formed instead of the linear protrusions 104, and show a state when no voltage is applied. 39, the slit 120 which is an orientation regulation structure is formed by removing the pixel electrode 114. As shown in FIG. The liquid crystal molecules are aligned approximately perpendicular to the vertical alignment film 116 on both substrates 108 and 110, similarly to the liquid crystal molecules shown in FIG. 37.

FIG. 40 is a cross-sectional view of the liquid crystal display device taken along the line Y-Y in FIG. 35 similarly to FIG. 39, and shows the state of the liquid crystal LC at the time of voltage application. As shown in FIG. 40, the area | region in which the slit 120 was formed is formed with the electric line of force substantially the same as the area | region in which the linear protrusion 104 shown in FIG. 38 was formed. As a result, the alignment division based on the linear protrusion 106 and the slit 120 is realized. 37 to 40, the display of the spherical spacer 122 holding the cell gap is omitted.

FIG. 41 is a sectional view of the vicinity of the drain bus line of the liquid crystal display device taken along the line Z-Z of FIG. As shown in FIG. 41, the TFT substrate 108 has an insulating film 124 on the entire surface of the glass substrate 112. The drain bus line 126 is formed on the insulating film 124. The passivation layer 128 is formed on the entire surface of the drain bus line 126. The pixel electrode 114 is formed for each pixel on the passivation layer 128. On the opposing common electrode substrate 110, the BM 102 is formed so as to shield a region (pixel region end) on which the pixel electrode 114 is not formed on the TFT substrate 108.

By the way, the conventional MVA system liquid crystal display device has the disadvantage that display becomes dark because panel transmittance is low. There are various factors in lowering the panel transmittance, but the lowering of the aperture ratio due to the misalignment between the TFT substrate 108 and the common electrode substrate 110, or the structure for regulating the orientation (linear protrusions 104, 106 or the slit 120). Decrease in the aperture ratio and disturbance of the liquid crystal alignment in the vicinity of the spherical spacer 122.

The MVA system liquid crystal display device has greatly improved visual characteristics, and is excellent for a computer monitor or the like in which the height of the luminance is relatively insignificant. However, in order to use it as a display unit or television of a DVD (Digital Versatile Disk) reproducing apparatus, in which the height of the luminance is important, it is necessary to use a special sheet that brightens the backlight or improves the luminance in a specific direction by matching the light emission direction. Therefore, a problem arises that the manufacturing cost increases.

In addition, the formation of linear protrusions, insulating layers, and the like as the alignment regulating structure increases the manufacturing process compared to the normal substrate manufacturing process, resulting in an increase in manufacturing cost.

SUMMARY OF THE INVENTION An object of the present invention is to provide a substrate for a liquid crystal display device, a liquid crystal display device having the same, and a method of manufacturing the same.

The object is a substrate sandwiching a liquid crystal having negative dielectric anisotropy with an opposing substrate disposed to face each other, a plurality of gate bus lines formed on the substrate, and a plurality of drains formed on the substrate crossing the gate bus lines. A pixel region defined by a bus line, the gate bus line and the drain bus line, a thin film transistor formed in each pixel region, a resin color filter layer formed in each pixel region, a pixel electrode formed in each pixel region, and It is achieved by a substrate for a liquid crystal display device characterized by having an alignment regulating structure formed on the substrate for orientation regulation of the liquid crystal.

Further, the object is a first substrate, a plurality of bus lines formed on the first substrate to cross each other, pixel regions defined by the bus lines, thin film transistors formed for each of the pixel regions, and for each of the pixel regions. A thin film transistor substrate having a formed resin color filter layer, a pixel electrode formed in each pixel region, a second substrate having a thickness or material different from that of the first substrate, and a common electrode formed on the second substrate; And a liquid crystal sealed between the common electrode substrate disposed opposite to the first substrate and the thin film transistor substrate and the common electrode substrate.

In addition, the object is a substrate sandwiching the liquid crystal between the opposing substrate disposed opposite, a plurality of gate bus lines formed on the substrate, a plurality of drain bus lines formed on the substrate to cross the gate bus line; A pixel region defined by the gate bus line and the drain bus line, a thin film transistor formed in each pixel region, a resin color filter layer formed in each pixel region, a pixel electrode formed in each pixel region, and a thin film transistor And a resin layer formed so as to cover the source / train electrode and the drain bus line.

[First embodiment]

The board | substrate for liquid crystal display devices, the liquid crystal display device provided with the same, and its manufacturing method which concern on 1st Embodiment of this invention are demonstrated using FIGS. First, the 1st basic structure of this embodiment is demonstrated using FIG. 1 and FIG. 1 shows three pixels of R, G, and B on the TFT substrate 8. As shown in FIG. 1, each pixel is defined by the gate bus line 25 extended in the left-right direction in the figure, and the drain bus line 26 extended in the up-down direction in the figure. TFTs (not shown) are formed near the intersection positions of the respective bus lines 25 and 26. Further, in order to shield light incident on the TFT, a resin overlap portion 32 in which at least two layers of the resin CF layers R, G, and B are superimposed is formed. In the liquid crystal display device according to the present embodiment, the BM is not formed on the common electrode substrate disposed to face the TFT substrate 8, and each bus line 25 and 26 and the resin overlapping portion ( 32) is intended to represent the function of the BM. Instead of the resin overlapping portion 32 shown in FIG. 1, light shielding is possible even if only one layer of the resin CF layers R, G, and B is formed on the TFT.

FIG. 2: is a figure which shows the 1st basic structure of the board | substrate for liquid crystal display devices which concerns on this embodiment, and the liquid crystal display device provided with the same, and has shown the cross section of the liquid crystal display device cut | disconnected by the A-A line of FIG. As shown in FIG. 2, the TFT substrate 8 has an insulating film 24 on a substantially entire surface on the transparent glass substrate 12. A drain bus line 26 is formed on the insulating film 24. Resin CF layers R, G, and B (only G and B are shown in FIG. 2) are formed on the drain bus line 26 (CF-on-TFT structure). On the resin CF layers R, G, and B, a pixel electrode 14 is formed for each pixel. On the other hand, the common electrode substrate 10 disposed to face the TFT substrate 8 has a common electrode 18 on the entire surface of the glass substrate 12. The BM is not formed on the common electrode substrate 10. Vertical alignment layers (not shown) are formed on the entire surface of the pixel electrode 14 and the common electrode 18. The liquid crystal layer LC is sealed between the TFT substrate 8 and the common electrode substrate 10.

By the way, in the conventional liquid crystal display shown in FIG. 41, when the pixel electrode 114 is formed to protrude above the drain bus line 126, the passivation layer 128 is formed between the pixel electrode 114 and the drain bus line 126. Is formed into a dielectric. Therefore, it is necessary to provide a predetermined interval between the pixel electrode 114 and the drain bus line 126 in the direction along the substrate surface.

In contrast, in the liquid crystal display device according to the present embodiment illustrated in FIG. 2, resin CF layers R, G, and B are formed between the pixel electrode 114 and the drain bus line 126. Since the resin CF layers R, G, and B are coated by spin coating or the like, the resin CF layers R, G, and B can be easily formed thicker than the protective film 128 formed by using a chemical vapor deposition (CVD) method. . Therefore, the capacitance generated between the drain bus line 26 and the pixel electrode 14 can be reduced. Therefore, since the pixel electrodes 14 can be superimposed on the drain bus line 26 in the direction perpendicular to the substrate surface, it is not necessary to form BM on the common electrode substrate 10, and the aperture ratio is improved. . In addition, since the drain bus line 26 functions as the BM, and there is no need to arrange the BM on the common electrode substrate 10, the manufacturing process is reduced. In addition, the reduction of the aperture ratio due to the junction shift between the TFT substrate 8 and the common electrode substrate 10 does not occur.

The CF-on-TFT structure shown in Fig. 2 is a liquid crystal display device of the standard white mode in the TN mode in which light leakage occurs during black display unless the end of the pixel electrode 14 is formed to overlap the drain bus line 26. Suitable for By the way, in order to reduce the capacitance formed in the overlapping region of the pixel electrode 14 and the drain bus line 26, the resin CF layers R, G, and B (organic insulating film) must be formed considerably thicker. Therefore, the CF-on-TFT structure has a problem that the manufacturing process is more complicated than when the resin CF layers (R, G, B) are formed on the opposite substrate side. In addition, in order to ensure shading (bus line shading) by the drain bus line 26, it is necessary to form end portions of the resin CF layers R, G, and B on the drain bus line 26 accurately. . Therefore, when the line width of the drain bus line becomes finer, there is a fear that sufficient positioning is impossible in the proximity exposure apparatus normally used for forming the resin CF layers (R, G, B). On the other hand, the use of a stepper or mirror projection aligner having excellent positioning accuracy increases the manufacturing cost of the CF-on-TFT structure.

FIG. 3 shows a modification of the first basic configuration shown in FIG. 2. As shown in FIG. 3, the pixel electrode 14 is disposed between the end of the pixel electrode 14 and the end of the drain bus line 26 so as not to overlap the drain bus line 26 when viewed in a direction perpendicular to the substrate surface. Is formed with a predetermined gap in the substrate surface direction. The resin CF layer G end is formed on the drain bus line 26, but the resin CF layer B end is formed off the drain bus line 26 by patterning misalignment. By the way, for example, in the case of the liquid crystal display device of the standard black mode which displays black when no voltage is applied as the MVA method, the pixel electrode 14 is formed so as not to overlap the drain bus line 26 by a predetermined gap. Even if it is, the gap region becomes black when no voltage is applied, so that there is no problem of light leakage. In addition, since the overlapping region of the pixel electrode 14 and the drain bus line 26 is not formed, the capacitance is not constituted. Therefore, the film thickness of the resin CF layers R, G, and B can be any thickness. Will be. In addition, as shown in FIG. 3, even if the end portions of the resin CF layers R, G, and B are formed out of the drain bus line 26, the end portions of the resin CF layers R, G, and B are arranged in the pixel electrode 14. As long as it is on the drain bus line 26 side from the end, no light leakage occurs. Therefore, the alignment margin at the time of patterning the resin CF layers R, G, and B can be increased, and a CF-on-TFT structure can be obtained at low cost by using a conventional proximity exposure apparatus.

Fig. 4 shows a second basic configuration of the liquid crystal display device substrate and the liquid crystal display device having the same according to the present embodiment, and shows a cross section of the liquid crystal display device cut by the line B-B in Fig. 1. As shown in FIG. 4, the liquid crystal display device has a linear projection 28 which is an alignment regulating structure formed on the pixel electrode 14. As shown in FIG. In the vicinity of the intersecting position of the gate bus line 25 and the drain bus line 26, the resin CF layers R, B, and G are laminated in this order, and a resin overlap portion 32 serving as a BM is formed. It is. On the resin superimposition part 32, the protrusion 29 which does not have a function as an orientation regulation structure is formed. The protrusions 29 are formed simultaneously with the same forming material as the linear protrusions 28. Column spacers for maintaining the cell gap between the resin overlapping portions 32 and the projections 29 of the resin layers constituting the TFT substrate 8 and the common electrode substrate 10 disposed to face each other ( 30) is formed.

In the 2nd basic structure of this embodiment, the resin CF layer etc. which comprise the TFT substrate 8 are laminated | stacked, and columnar spacer is formed. By doing in this way, since a manufacturing process is reduced, manufacturing cost can be reduced. In addition, since light leakage or orientation disturbance occurring in the vicinity of a scattering spacer such as a spherical shape can be reduced, good display characteristics can be obtained.                     

5 shows a third basic configuration of a substrate for a liquid crystal display device according to the present embodiment. In the frame region 40 of the common electrode substrate 10, a frame pattern 34 that shields an end portion of the display region 38 is formed. Further, for example, a cross-shaped alignment mark, which is used when bonding to an opposing TFT substrate 8 (not shown in FIGS. 5 and 6), is formed outside the frame region 40. .

FIG. 6A shows an enlarged area α of the common electrode substrate 10 shown in FIG. 5. 6B illustrates a cross section of the common electrode substrate 10 cut by the C-C line in FIG. 6A. As shown in FIGS. 6A and 6B, the common electrode 18 is formed in the display region 38 on the glass substrate 12 and the frame region 40 at the end of the display region 38. . On the common electrode 18 of the display area 38, the linear protrusion 28 is formed with black resist (black resin) etc. obliquely with respect to the edge part of the display area 38, for example. On the common electrode 18 of the frame region 40, a frame pattern 34 for shielding the ends of the display region 38 is formed simultaneously with the same forming material as the linear protrusions 28. In addition, the alignment mark 36 is formed simultaneously in the formation material similar to the linear protrusion 28 at the left side of the figure of the frame area | region 40. FIG.

According to the 3rd basic structure of this embodiment, since the frame pattern 34 or the alignment mark 36 is formed simultaneously with the same formation material as the orientation control structure, the manufacturing process of the common electrode substrate 10 is reduced. In this way, the manufacturing cost can be reduced.

Hereinafter, the liquid crystal display device substrate and the liquid crystal display device having the same according to the present embodiment will be described in more detail using Examples 1-1 to 1-3.

(Example 1-1)

First, the liquid crystal display device substrate according to Example 1-1, the liquid crystal display device provided with the same, and a manufacturing method thereof will be described with reference to FIGS. FIG. 7 is a conceptual diagram showing a state in which the TFT substrate 8 and the common electrode substrate 10 shown in FIG. 1 are bonded together, and three pixels of R, G, and B are shown. In addition, the liquid crystal display device which concerns on a present Example is an MVA system liquid crystal display device, for example, and FIG. 7 also shows the arrangement | positioning of an orientation regulation structure. On the common electrode substrate 10, linear protrusions 28 are formed obliquely with respect to the end of the pixel region. Further, on the TFT substrate 8, the slits 20 and fine slits 21 extending from the slits 20 protruding substantially perpendicular to the extending direction of the slits 20 are formed obliquely with respect to the end of the pixel region. . The fine slits 21 are formed in plural at narrow intervals as compared with the interval between the slits 20 and the linear protrusions 28. The liquid crystal molecules having negative dielectric anisotropy are arranged so as to be in parallel with the direction in which the alignment control structures are extended, provided that the alignment control structures are formed at relatively narrow intervals. Thus, by forming the fine slits 21 orthogonal to the slits 20, the liquid crystal molecules are more strongly regulated in orientation.

FIG. 8 is a cross-sectional view of the liquid crystal display device cut by the D-D line of FIG. 7. As shown in FIG. 8, the TFT substrate 8 has an insulating film 24 on the entire surface over the glass substrate 12. A drain bus line 26 is formed on the insulating film 24. Resin CF layers R, B, and G (only G and B are shown in FIG. 8) are formed on the drain bus line 26. FIG. On the resin CF layers R, B, and G, the pixel electrode 14 and the slit 20 from which the pixel electrode 14 is partially removed are formed. In addition, illustration of the fine slit 21 is abbreviate | omitted in FIG. On the other hand, the common electrode substrate 10 has a common electrode 18 on the entire surface on the glass substrate 12. The linear protrusion 28 is formed on the common electrode 18. A vertical alignment film (not shown) is formed on the pixel electrode 14, the common electrode 18, and the linear protrusions 28. The liquid crystal LC having negative dielectric anisotropy is sealed between the TFT substrate 8 and the common electrode substrate 10.

9 shows the configuration of the TFT vicinity of the TFT substrate 8 according to the present embodiment. As shown in FIG. 9, the TFT substrate 8 includes a plurality of gate bus lines 25 (only one shown in FIG. 9) and a gate bus line 25 extending in the left and right directions in the drawing on the glass substrate 12. ) And a plurality of drain bus lines 26 (only three are shown in FIG. 9) extending in the vertical direction in the drawing. The TFT 42 is formed in the vicinity of the intersection position of both bus lines 25 and 26. The TFT 42 includes a drain electrode 44 branched from the drain bus line 26, a source electrode 46 disposed to face the drain electrode 44 at a predetermined gap, and the gate bus line 25. It has a portion (gate electrode) overlapping with the drain electrode 44 and the source electrode 46. The operation semiconductor layer 52 and the channel passivation layer 48 thereon are formed on the gate electrode. The gate bus line 25 and the drain bus line 26 define pixel regions, and resin CF layers R, G, and B are formed in each pixel region. In addition, a pixel electrode 14 is formed in each pixel region. The left and right ends of the pixel electrode 14 are formed so as to overlap the ends of the drain bus lines 26 in the direction perpendicular to the substrate surface. In addition, illustration of the slit is abbreviate | omitted in FIG.

10A shows a cross section of the TFT substrate 8 cut by the EE line of FIG. 9, and FIG. 10B shows a cross section of the TFT substrate 8 cut by the FF line of FIG. 9. Indicates. As shown in FIGS. 10A and 10B, the resin CF layers R, G, and B are formed on the TFT 42 and the drain bus line 26. The pixel electrode 14 is formed on the resin CF layers R, G, and B. As shown in FIG. The end portion of the pixel electrode 14 is formed so as to overlap the end portion of the drain bus line 26 in the direction perpendicular to the substrate surface.

Next, the manufacturing method of the board | substrate for liquid crystal display devices which concerns on a present Example is demonstrated using FIGS. 11 to 16 are cross-sectional views illustrating the method of manufacturing the substrate for a liquid crystal display device according to the present embodiment. 11 to 16, (a) shows the cross section of the TFT substrate 8 cut by the EE line shown in FIG. 9, and (b) shows the TFT substrate 8 cut by the FF line shown in FIG. The cross section of is shown. First, as shown in FIGS. 11A and 11B, an aluminum (Al) layer having a thickness of 100 nm and a titanium having a thickness of 50 nm are formed on the entire surface on the glass substrate 12, for example. ) Layer is formed into a film in this order and patterned, and the gate bus line 25 is formed. Patterning is performed using the photolithography method which forms a predetermined | prescribed resist pattern on a to-be-patterned layer, etches a to-be-patterned layer using the obtained resist pattern as an etching mask, and peels a resist pattern.

Next, as shown in FIGS. 12A and 12B, for example, a silicon nitride film (SiN film) having a film thickness of 350 nm, an a-Si layer 52 'having a film thickness of 30 nm, and a film thickness, for example. A 120 nm SiN film is formed continuously. Next, by the patterning by backside exposure, the channel protective film 48 used as an etching stopper is formed self-aligning. Next, as shown in Figs. 13A and 13B, for example, an n + a-Si layer having a thickness of 30 nm, a Ti layer having a thickness of 20 nm, an Al layer having a thickness of 75 nm, and the like. A 40-nm-thick Ti layer is formed and patterned using the channel protective film 48 as an etching stopper to form the drain electrode 44, the source electrode 46, and the drain bus line 26. The TFT 42 is completed by the above process.

Next, as shown to Fig.14 (a) and (b), the R resist of the photosensitive pigment dispersion type is apply | coated to pattern thickness 3.0 micrometers, for example, and is patterned. Thereafter, post-baking is performed to form the resin CF layer R having the contact hole 50 opened on the source electrode 46 in the predetermined pixel region.

Next, as shown to Fig.15 (a) and (b), the B resist of the photosensitive pigment dispersion type is apply | coated to pattern thickness 3.0 micrometers, for example, and is patterned. Thereafter, post-baking is performed to form the resin CF layer (B) in a predetermined pixel region. Similarly, as shown in Figs. 16A and 16B, the resin CF layer G is formed in a predetermined pixel region. Next, for example, a pixel electrode having a film thickness of 70 nm is formed on the entire surface and patterned, and the left and right ends in the figure are superimposed on the ends of the drain bus lines 26 in the direction perpendicular to the substrate surface ( 14). Through the above steps, the TFT substrate 8 shown in FIGS. 9 and 10 (a) and (b) is completed.

In this embodiment, the resin CF layers R, G, and B are formed directly on the source / drain formation layers, such as the drain electrode 44, the source electrode 46, and the drain bus line 26, but the source / A protective film may be formed on the drain formation layer, and resin CF layers (R, G, B) may be formed on the protective film. In addition, a protective film may be formed on the resin CF layers R, G, and B, and the pixel electrode 14 may be formed on the protective film. Forming materials or manufacturing processes, such as TFT 42 and resin CF layer (R, G, B), may be other than the above.

In the present embodiment, the slits 20 and the fine slits 21 are formed on the TFT substrate 8 as the alignment regulating structure, and the linear projections 28 are formed on the common electrode substrate 10. However, other combinations are provided. Can also be used. According to this embodiment, the same effects as in the first basic configuration can be obtained.

(Example 1-2)

Next, the liquid crystal display device substrate and the liquid crystal display device provided with the same according to Example 1-2 will be described with reference to FIGS. 17, 18 and 42. FIG. 17 is a cross-sectional view showing the configuration of the liquid crystal display device according to the present embodiment, and has the same cross section as FIG. As shown in Fig. 17, the liquid crystal display device according to the present embodiment is formed on the slit 20 of the TFT substrate 8, and is a dielectric layer serving as an orientation regulating structure for improving the response characteristics of the liquid crystal molecules in the intermediate bath. Has 56. The dielectric layer 56 is made of photoresist or the like.

FIG. 18 is a cross-sectional view showing the configuration of the liquid crystal display device according to the present embodiment, and has the same cross section as FIG. 4. As shown in Fig. 18, in the liquid crystal display device according to the present embodiment, the resin CF layers (R, B) near the intersection position between the gate bus line 25 and the drain bus line 26 of the TFT substrate 8 are shown. , G) are stacked in this order. Moreover, the projection 29 which does not have a function as an orientation regulation structure is formed on the common electrode 18 of the common electrode substrate 10. Gate bus line 25, insulating film 24, drain bus line 26 and resin CF layers R, G, and B on the TFT substrate 8, and projections 29 on the common electrode substrate 10. The columnar spacer 30 which maintains a cell gap is comprised by this.

In addition, the columnar spacer 30 is not limited to said structure, It may be comprised by another layer. For example, a resin layer formed on the resin CF layer (B) simultaneously with the same formation material as the dielectric layer 56 may be used. At this time, the projection 29 on the common electrode substrate 10 side may not be formed. In addition, formation materials or manufacturing processes, such as TFT 42 and resin CF layer (R, G, B), may be other than the above. The alignment regulating structures formed on the TFT substrate 8 and the common electrode substrate 10 may be different combinations. According to this embodiment, the same effects as in the second basic configuration can be obtained.

42 is a cross-sectional view showing a modification of the configuration of the liquid crystal display device according to the present embodiment, and has the same cross section as that of FIG. As shown in Fig. 42, in the liquid crystal display device of the present modified example, the resin CF layers R, B, and C in the vicinity of the intersection position between the gate bus line 25 and the drain bus line 26 of the TFT substrate 8 are shown. The columnar spacer 30 is comprised only by lamination | stacking of G). In this manner, the columnar spacers 30 may be formed without using the protrusions 29 of the common electrode substrate 10 or the dielectric layer 56 on the TFT substrate 8 side.

This configuration is very suitable for the MVA-LCD of the CF-on-TFT structure in which an orientation control structure different from the protrusion is formed. For example, in TN mode LCDs, in order to form columnar spacers in a laminated structure such as a resin CF layer or the like, in order to obtain superposition accuracy, panel bonding accuracy, or sufficient layer height when the resin CF layers are superimposed. In consideration of the required installation area, the cross-sectional area of the resin CF layer for the columnar spacer must be increased, resulting in a problem that the opening ratio is lowered.

On the other hand, when the columnar spacers are formed by overlapping the resin CF layers in the CF-on-TFT structure, panel joining precision does not have to be considered. However, light shielding against liquid crystal alignment defects in the vicinity of the columnar spacer is required, and the aperture ratio is lowered or BM is required because of the light shielding.

On the other hand, the MVA-LCD of the CF-on-TFT structure is a standard black mode, and when the columnar spacers are formed by overlapping the resin CF layer, the portion where no pixel electrode is present always becomes black display, thereby forming BM. It is not necessary to do this, and it becomes possible to suppress the opening rate drop. Moreover, since it is not necessary to consider the panel bonding precision or the liquid-crystal orientation defect in the vicinity of a columnar spacer, it becomes possible to form a columnar spacer, suppressing the fall of an aperture ratio.

(Example 1-3)

Next, the liquid crystal display device substrate, the liquid crystal display device provided with the same, and a manufacturing method thereof according to Examples 1-3 will be described with reference to FIGS. 19 to 22. FIG. 19 shows a configuration of a liquid crystal display substrate according to the present embodiment, and corresponds to FIG. 6A. 20 shows the cross section of the board | substrate for liquid crystal display devices cut | disconnected by the G-G line | wire of FIG. 19, and respond | corresponds to FIG. 6 (b). As shown in FIG. 19 and FIG. 20, the common electrode 18 is formed on the display region 38 of the common electrode substrate 10 and the glass substrate 12 of the frame region 40. On the common electrode 18 of the display area 38, the linear projection 28 is formed obliquely with respect to the end of the display area 38. The linear protrusions 28 are formed of a light shielding metal chromium (Cr), and an upper layer is formed of a resist layer used for patterning Cr. In the frame region 40, a frame pattern 34 for shielding the end of the display region 38 is formed. On the left side of the drawing of the frame region 40, a cross-shaped alignment mark 36 used when bonding the opposing TFT substrate 8 (not shown in FIGS. 19 and 20) is a glass substrate ( 10) formed on the top. The frame pattern 34 and the alignment mark 36 are simultaneously formed of the same forming material as the linear protrusions 28.

Next, the manufacturing method of the board | substrate for liquid crystal display devices which concerns on a present Example is demonstrated using FIG. 21 and FIG. First, as shown in FIG. 21, ITO with a film thickness of 100 nm is formed into a film on the whole surface, for example, on the glass substrate 12, and the common electrode 18 is formed. Next, as shown in FIG. 22, Cr film with a film thickness of 100 nm is formed into a film, for example. Next, a resist is apply | coated to the whole surface, and it exposes and develops, and a predetermined resist pattern is formed. Next, Cr is etched using a resist pattern as an etching mask, and the lower layer of the linear protrusion 28, the frame pattern 34, and the alignment mark 36 are formed. Next, the resist pattern is cured by post-baking to form an upper layer of the linear protrusions 28. Through the above steps, the common electrode substrate 10 according to the present embodiment is completed.

In addition, in the present embodiment, the frame area 40 is shielded, or a light shielding metal layer such as Cr is used to visually identify the alignment mark 36, and the resist is formed to form the linear protrusion 28. Although it is used, as shown in FIG. 5 and FIG. 6, when the black resist which forms a light shielding film is used for a resist layer, the metal layer for light shielding becomes unnecessary. The MVA type liquid crystal display device is a standard black mode, and an OD (Optical Density) value of the black resist is sufficient as about 2.0.

As described above, according to the present embodiment, a liquid crystal display device having high luminance and good display characteristics can be obtained.

Second Embodiment

The board | substrate for liquid crystal display devices which concerns on 2nd Embodiment of this invention, the liquid crystal display device provided with the same, and its manufacturing method are demonstrated using FIG. 23 and FIG.

Color liquid crystal display devices are used for displays such as monitors, notebook PCs, personal digital assistants (PDAs), and the like. In general, a liquid crystal display device has a large weight ratio in which a glass substrate is compared with other members. For example, in the glass substrate of thickness 0.7mm, it has a weight of about 40% of a liquid crystal display device. Therefore, reducing the weight of the glass substrate generally has a great effect on the weight reduction of the liquid crystal display device.

As one means of reducing the weight of glass, there is a method of thinning the thickness. However, it is difficult to form TFT, CF, etc. by high-precision patterning on a thin glass substrate, and there arises a problem that the precision of patterning is limited. In addition, when glass substrates having different characteristics are used in the TFT substrate and the common electrode substrate disposed to face each other, deformation of the substrate due to heat or the like occurs, which causes a problem in that bonding is difficult. After the liquid crystal display panel is completed, the outside of both substrates are polished to reduce the thickness, but a problem arises in that the manufacturing cost increases.

As another method of lightening the substrate, there is a method of using a plastic substrate instead of the glass substrate. However, the problem arises that formation of TFT, CF, etc. which require high precision patterning similarly to a thin glass substrate is difficult. Moreover, since a board | substrate is flexible, the problem that pressure resistance with respect to pressing with a finger etc. may become inadequate depending on the objective to be used. An object of this embodiment is to provide a liquid crystal display device having high reliability and a light weight.

In response to this problem, in this embodiment, TFTs and CFs are formed on one substrate. By doing in this way, since the high precision patterning is unnecessary for the other board | substrate, a thin glass substrate, a plastic substrate, etc. can be selected freely. In addition, in this embodiment, the columnar spacer which maintains a cell gap is formed in advance on a board | substrate. By doing in this way, a stable cell gap is obtained and pressure resistance improves.

Hereinafter, the board | substrate for liquid crystal display devices which concerns on this embodiment, the liquid crystal display device provided with the same, and its manufacturing method are demonstrated more concretely using Example 2-1 and 2-2.

(Example 2-1)                     

First, the liquid crystal display device according to Example 2-1 will be described. The TFT substrate 8 of the liquid crystal display device according to the present embodiment has the same structure as that of the TFT substrate 8 according to the first embodiment shown in FIGS. 9 and 10.

FIG. 23 corresponds to FIG. 10A and shows a cross section of the liquid crystal display device according to the present embodiment. As shown in Fig. 23, in the liquid crystal display device according to the present embodiment, the TFT substrate 8 and the common electrode substrate 10 thinner than the TFT substrate 8 are bonded to each other through a predetermined cell gap. In the common electrode substrate 10, the common electrode 18 is formed on the glass substrate 12 ′ which is thinner than the glass substrate 12 of the TFT substrate 8.

Here, the liquid crystal display substrate and the manufacturing method of the liquid crystal display device having the same according to the present embodiment will be briefly described. In addition, since the manufacturing method of the TFT substrate 8 is the same as that of 1st Embodiment shown in FIGS. 11-16, illustration and description are abbreviate | omitted. As shown in FIG. 23, the common electrode substrate 10 is made of the same material as the glass substrate 12 on the TFT substrate 8 side and is thinner than the glass substrate 12, for example, having a thickness of 0.2 mm. A glass substrate 12 'using alkaline glass is used. On the entire surface of the glass substrate 12 ', for example, 100 nm-thick ITO is formed into a film and patterned, and the common electrode 18 is formed. Through the above steps, the common electrode substrate 10 is completed.

Thereafter, an alignment film is formed on the opposing surfaces of both substrates 8 and 10 and rubbed. Next, a sealing material is apply | coated and a spacer is spread | dispersed. Next, both board | substrates 8 and 10 are bonded together, and it divides for every panel. Next, a liquid crystal is inject | poured and sealed from a liquid crystal injection hole, and a polarizing plate is adhere | attached. Through the above steps, the liquid crystal display device according to the present embodiment is completed.

In the present Example, although the alkali free glass of thickness 0.2mm was used as the glass substrate 12 ', glass from which the specific gravity differs from the glass substrate 12 can also be used. In order to reduce manufacturing cost further, the soda lime glass containing an alkali component can also be used. The alkali component which glass contains is made into 1% or more, for example. However, when glass containing an alkali component is used in a liquid crystal display device having a TFT 42, such as a channel etching type, on which the operation semiconductor layer 52 is exposed, alkali contamination of the TFT 42 may be feared. It is desirable to protect the TFT 42. In addition, there is no problem when glass containing an alkali component is used in the liquid crystal display device having the channel protective film type TFT 42.

In this embodiment, a lightweight glass or plastic substrate is used for the common electrode substrate 10 by forming the resin CF layers R, G, and B on the TFT substrate 8. Therefore, a light weight and reliable liquid crystal display device can be realized. In addition, when the thick substrate is arranged on the display screen side, the pressure resistance against pressing with a finger can be improved.

(Example 2-2)

Next, the liquid crystal display device according to Example 2-2 will be described with reference to FIG. 24 is a cross sectional view showing a configuration of a liquid crystal display device according to the present embodiment. As shown in Fig. 24, the liquid crystal display device according to the present embodiment is the same as the liquid crystal display device according to the embodiment 2-1, and the common electrode substrate 10 is smaller than the glass substrate 12 of the TFT substrate 8; It has the thin glass substrate 12 '.

On the TFT substrate 8, the resin CF layers B, G, and R are laminated in this order, and the resin layer 60 made of the photosensitive acrylic resin is further laminated thereon, and the columnar spacers 30 holding the cell gap are maintained. ) Is formed. In addition, the layer structure of the columnar spacer 30 may be another structure, and the order of lamination is arbitrary. In the case of the MVA type liquid crystal display device, the resin layer 60 may be simultaneously formed of the same material as that of the linear projection, which is an alignment control structure.

According to the present embodiment, since the columnar spacers 30 are used, the cell gaps are not distributed irregularly and can be obtained in a stable cell gap because they are located on the alignment regulating structure such as a spherical spacer scattered on the substrate surface. . Moreover, since the columnar spacer 30 is arrange | positioned uniformly and densely on a board | substrate surface, pressure resistance improves. Therefore, even if the common electrode substrate 10 is arranged on the display screen side, a highly reliable liquid crystal display device can be realized. In addition, since the reflection by a metal layer becomes large when the TFT substrate 8 is arrange | positioned at the display screen side, it is preferable to use the metal of a low reflection multilayer film on the surface of the metal layer at least on the glass substrate 12 side.

The effect by this embodiment is concretely demonstrated compared with the conventional liquid crystal display device. Table 1 has shown about the two board | substrates A1 and B1 which comprise the conventional liquid crystal display device. Resin CF layers R, G, and B are formed on one substrate A1, and a TFT 42 is formed on the other substrate B1. The materials of the substrates A1 and B1 are NA35 glass. The substrates A1 and B1 have a thickness of 0.7 mm and a density of 2.50 g / cm 3.                     

TABLE 1

material Thickness (mm) Density (g / cm 3) Formations on the substrate Weight ratio of panel Board A1 NA35 glass 0.7 2.50 CF  One Board B1 NA35 glass 0.7 2.50 TFT

Table 2 has shown about two board | substrates A2 and B2 which comprise another conventional liquid crystal display device. As for both substrates A2 and B2, NA35 glass having a density of 2.50 g / cm 3 is used similarly to the substrates A1 and B1. Both substrates A2 and B2 are polished after being bonded to each other, and the thickness of each of the substrates A2 and B2 is 0.5 mm. Resin CF layers R, G, and B are formed on one substrate A2, and a TFT 42 is formed on the other substrate B2. The weight ratio (hereinafter, referred to as the "weight ratio of the panel") when the weight of the liquid crystal display panel bonded to the substrates A1 and B1 shown in Table 1 is 0.71 is reduced to 0.71, but the manufacturing cost increases, which is expensive. It becomes

TABLE 2

material Thickness (mm) Density (g / cm 3) Formations on the substrate Weight ratio of panel Board A2 NA35 glass 0.5 2.50 CF  0.71 Board B2 NA35 glass 0.5 2.50 TFT

Table 3 has shown about two board | substrates A3 and B3 which comprise the liquid crystal display device which concerns on a present Example. As for the board | substrate B3, NA35 glass of thickness 0.7mm and density 2.50g / cm <3> is used similarly to the board | substrate B1. Further, the TFT 42 and the resin CF layers R, G, and B are formed on the substrate B3. On the other hand, AsahiAS glass which is alkali glass of thickness 0.2mm and density 2.49g / cm <3> is used for the board | substrate A3. The weight ratio of the panel is 0.64, which is lighter than the panel shown in Table 2. The material of the board | substrate A3 will be used in any kind as long as it is glass which is lighter than the board | substrate B3.

TABLE 3

material Thickness (mm) Density (g / cm 3) Formations on the substrate Weight ratio of panel Board A3 Asahi AS Glass 0.2 2.49 -  0.64 Board B3 NA35 glass 0.7 2.50 TFT

Table 4 has shown about two board | substrates A4 and B4 which comprise the other liquid crystal display device which concerns on this embodiment. As for the board | substrate B4, NA35 glass of thickness 0.7mm and density 2.50g / cm <3> is used similarly to the board | substrate B1. Further, TFT and CF are formed on the substrate B4. On the other hand, polyether sulfone (PES) of thickness 0.2mm and density 1.40 is used for board | substrate A4. The weight ratio of the panel is 0.58, which is lighter than the panel shown in Table 3. The material of the substrate A4 is not limited to PES as long as it is plastic, and may be polycarbonate (PC) or polyarylate (PAR).

TABLE 4

material Thickness (mm) Density (g / cm 3) Formations on the substrate Weight ratio of panel Board A4 PES 0.2 1.40 -  0.58 Board B4 NA35 glass 0.7 2.50 TFT CF

As described above, in the present embodiment, the resin CF layers R, B, and G are formed under the pixel electrode 14. Therefore, the high precision patterning is unnecessary for the common electrode substrate 10, and accurate positioning is unnecessary even when bonding with the TFT substrate 8. Therefore, as the common electrode substrate 10, a thin glass substrate, a plastic substrate, or the like can be used, a lightweight and reliable liquid crystal display device can be realized. In addition, after the TFT substrate 8 and the common electrode substrate 10 are bonded together, there is no need to polish both substrates to reduce the thickness, so that the manufacturing process does not increase and the manufacturing cost does not increase.

[Third Embodiment]

The board | substrate for liquid crystal display devices, the liquid crystal display device provided with the same, and its manufacturing method which concern on 3rd Embodiment of this invention are demonstrated using FIGS.

As in the first embodiment, the liquid crystal display device substrate having the structure (CF-on-TFT structure) in which the resin CF layers R, G, and B are formed on the TFT substrate 8 is formed of the pixel electrode 14. Since the resin CF layers (R, G, B) are formed in the lower layer, the opening ratio can be improved. Therefore, the panel transmittance can be improved and the luminance of the liquid crystal display device can be improved.

However, in the substrate for a liquid crystal display device having the CF-on-TFT structure as in the first embodiment, on the source / drain metal layer that is the uppermost layer in the step of forming the TFT 42 (in the case of the top gate structure, the gate metal layer is also included). Hereinafter, the CF developer at the time of patterning the resin CF layers (R, G, B) formed in the upper layer is not covered by the protective film (passivation film), including these, abbreviated as a source / drain metal layer. This causes the source / drain metal layer to erode, causing a problem that the resistance value of the bus line formed of the metal layer increases or the bus line is disconnected. Further, there arises a problem that the source / drain electrodes 44 and 46 are eroded and retreat, and the exposed operation semiconductor layer 52 is contaminated by contact with the CF developer. On the other hand, if a protective film formed by a CVD apparatus is formed on the source / drain metal layer, there arises a problem that the manufacturing process is increased. An object of the present embodiment is to provide a substrate for a liquid crystal display device, a liquid crystal display device having the same, and a method of manufacturing the same, which can provide a highly reliable display device at low cost.

In this embodiment, in the present embodiment, the resin CF layer (R, G, B) to be first formed or the BM resin or columnar spacer 30 formed in the lower layer of the resin CF layer (R, G, B) are constituted. The source / drain metal layer is covered with a resin.

Hereinafter, the board | substrate for liquid crystal display devices which concerns on this embodiment, the liquid crystal display device provided with the same, and its manufacturing method are demonstrated more concretely using Example 3-1 and 3-2.

(Example 3-1)

First, the liquid crystal display device substrate, the liquid crystal display device provided with the same, and a manufacturing method thereof according to Example 3-1 will be described with reference to FIGS. 25 to 33. Fig. 25 shows the structure of the liquid crystal display substrate according to the present embodiment (however, the display of the CF layer is omitted). FIG. 26A shows a cross section of the substrate for a liquid crystal display device cut by the JJ line in FIG. 25, and FIG. 26B shows a cross section of the substrate for a liquid crystal display device cut by the KK line in FIG. have. As shown in Fig. 26, in the liquid crystal display device substrate according to the present embodiment, two layers of resin CF layers having different colors are laminated at the end of the pixel region, whereby BM is formed. All the BMs formed in this way have the resin CF layer R below. The resin CF layer R is formed so as to cover all of the source / drain metal layers such as the drain bus line 26. The pixel electrode 14 is formed with slits 20 extending parallel to the end of the pixel region and a plurality of fine slits 21 protruding obliquely from the slits 20. In addition, the liquid crystal display device substrate according to the present embodiment has a liquid crystal in which a polymer structure in which an ultraviolet monomer is cured by irradiation of ultraviolet rays is formed.

Next, the manufacturing method of the board | substrate for liquid crystal display devices which concerns on a present Example is demonstrated using FIGS. 27-33. 27 to 30 are diagrams showing a method for manufacturing a substrate for a liquid crystal display device according to the present embodiment. 31 to 33 are process cross-sectional views illustrating a method for manufacturing a substrate for a liquid crystal display device according to the present embodiment. In FIGS. 31-33, (a) has shown the same cross section as FIG. 26 (a), and (b) has shown the same cross section as FIG. 26 (b). In addition, the process until the TFT 42 and the drain bus line 26 are formed on the glass substrate 12 is the manufacturing method of the board | substrate for liquid crystal display devices by Example 1-1 shown to FIGS. 11-13. Since it is the same as, the illustration and the description thereof are omitted.

11 to 13, the plurality of gate bus lines 25 extending in the left and right directions in the figure and the drain bus lines 26 extending in the vertical direction in the figure crossing the gate bus lines 25. Is formed (see FIG. 27). The TFT 42 is formed near the intersection position between the gate bus line 25 and the drain bus line 26. In addition, the pixel region is defined by the gate bus line 25 and the drain bus line 26. A storage capacitor bus line (secondary capacitance electrode) 62 extending substantially parallel to the gate bus line 25 across the center of the pixel region is formed of the same layer as the gate bus line 25. On the storage capacitor bus line 62, the storage capacitor electrode (middle electrode) 64 is formed in the same layer as the drain bus line 26 for each pixel region.

Next, an R resist of the photosensitive pigment dispersion type is applied and patterned, for example, at a film thickness of 1.5 m. Thereafter, by post-baking, as shown in FIGS. 28 and 31, the pixel region displaying R, on the TFT 42, on the gate bus line 25, on the drain bus line 26, and the storage capacitor bus line. The first resin CF layer R is formed on the layer 62. At this time, the drain electrode 44, the source electrode 46, and the drain bus line 26 of the uppermost metal layer are covered with the resin CF layer R. As shown in FIG.

Next, a G resist is apply | coated and patterned with a film thickness of 1.5 micrometers, for example. Thereafter, by post-baking, as shown in FIGS. 29 and 32, the second resin CF layer G is disposed on the pixel region displaying G and the drain bus line 26 adjacent to the left side in the drawing of the pixel region. Form. At this time, the TFT 42 in the pixel region, the gate bus line 25 adjacent to the pixel region, the storage capacitor bus line 62 in the pixel region, and the drain bus line 26 adjacent to the left side of the pixel region. ), BM by two-layer superposition of the resin CF layer is formed.

Next, B resist is apply | coated and patterned with a film thickness of 1.5 micrometers, for example. Thereafter, by post-baking, as shown in FIGS. 30 and 33, the pixel region displaying B, on the drain bus line 26 adjacent to both of the pixel regions, and adjacent to the right side in the drawing of the pixel region. The third resin CF layer B is formed on the TFT 42. At this time, both the TFT 42 of the pixel region adjacent to the right side of the pixel region, the gate bus line 25 adjacent to the pixel region, the storage capacitor bus line 62 in the pixel region, and the pixel region On the adjacent drain bus line 26, BM by two layers superimposition of a resin CF layer is formed.

Thereafter, for example, ITO having a film thickness of 70 nm is formed on the entire surface and patterned, and the pixel electrode 14, the slit 20, and the fine slit 21 in each pixel region are formed, and FIGS. 25 and 26. The board | substrate for liquid crystal display devices shown by is completed.

Next, for example, a vertical alignment film is applied to each opposite surface of the common electrode substrate on which the common electrode made of ITO is formed and the substrate for the liquid crystal display device. Next, spherical spacers are dispersed, for example, on one substrate, and a sealing material is applied around the other substrate. Subsequently, both substrates are bonded together, and a liquid crystal is injected between both substrates. As a liquid crystal, the thing which added 0.2w% of ultraviolet curable monomers to the negative liquid crystal which has negative dielectric anisotropy is used, for example. Next, a gradation voltage of, for example, direct current (DC) 10V is applied to the drain bus line 26, and a common voltage of, for example, DC 5V is applied to the common electrode. Subsequently, a gate voltage of, for example, DC 30V is applied to the gate bus line 25, and the liquid crystal in the liquid crystal display panel is inclined, for example, at a wavelength of 300 nm to 450 nm from the opposite substrate side. Irradiate 2000mJ ultraviolet rays. Thereby, an ultraviolet curable monomer hardens | cures and a polymer structure is formed in the liquid crystal in a liquid crystal display panel, and as shown in FIG. 25, the inclination of four directions arises in liquid crystal molecules (it shows the cylinder in a figure) in a voltage-free state. . In this embodiment, the pretilt angle of the liquid crystal molecules is 86 degrees. Thereafter, the polarizing plates of both substrates are bonded together to complete the liquid crystal display device according to the present embodiment.                     

(Example 3-2)

Next, the liquid crystal display device substrate according to Example 3-2, the liquid crystal display device provided with the same, and a manufacturing method thereof will be described with reference to FIG. Fig. 34 is a sectional view showing the structure of a liquid crystal display substrate according to the present embodiment. The liquid crystal display substrate according to the embodiment 3-1 has the channel protective film type TFT 42. The liquid crystal display substrate according to the present embodiment has the channel etching TFT 66 as shown in FIG. Have

Next, the liquid crystal display device substrate, the liquid crystal display device provided with the same, and a manufacturing method thereof according to the present embodiment will be described. First, for example, an Al layer having a thickness of 100 nm and a Ti layer having a thickness of 50 nm are deposited and patterned in this order on the entire surface on the glass substrate 12, and the gate bus line 25 and the storage capacitor bus are patterned. Form a line. Next, for example, a SiN film having a thickness of 350 nm, an a-Si layer having a thickness of 120 nm, and an n + a-Si layer having a thickness of 30 nm are continuously formed. Next, the n + a-Si layer and the a-Si layer are patterned in an island shape to form an operation semiconductor layer 52 'and an n-type semiconductor layer (not shown) thereon. Next, for example, MoN having a thickness of 50 nm, Al having a thickness of 150 nm, MoN having a thickness of 70 nm and Mo having a thickness of 10 nm are successively formed and patterned, and the source electrode 46 is formed by element separation. The drain electrode 44 and the storage capacitor electrode are formed. The channel etching type TFT 66 is completed by the above process. Since the subsequent steps are the same as the manufacturing method of the liquid crystal display device according to the embodiment 3-1 shown in Figs. 27 to 33, the illustration and the description thereof are omitted.

Next, the manufacturing method of the board | substrate for liquid crystal display devices by another example is demonstrated. Although not shown, the same reference numerals will be given to the components showing the same functional operation as those shown in FIG. The liquid crystal display substrate according to this example has a top gate TFT 42. First, a Ti layer having a thickness of 20 nm, an Al layer having a thickness of 75 nm, a Ti layer having a thickness of 40 nm, and an n + a-Si layer having a thickness of 30 nm are formed on the glass substrate 12, for example. To form a drain electrode 44 and a source electrode 46. Next, for example, an a-Si layer having a thickness of 30 nm, a SiN film having a thickness of 350 nm, and an Al layer having a thickness of 100 nm are formed and patterned, and the operation semiconductor layer 52 'and the insulating film 24 are patterned. And the gate bus lines 25 are collectively formed. The operation semiconductor layer 52 ', the insulating film 24, and the gate bus line 25 may be formed in sequence without forming them collectively. The top gate type TFT 42 is completed by the above process. In this example, the storage capacitor bus line 62 and the storage capacitor electrode 64 are not formed, but may be formed.

The subsequent steps are substantially the same as those of the manufacturing method of the liquid crystal display device according to Example 3-1 shown in Figs. In addition, in this example, since the uppermost metal layer is a gate metal layer, the gate metal layer is covered by the first resin CF layer formed.

Moreover, the manufacturing method of the board | substrate for liquid crystal display devices by another example is demonstrated. Although not shown, the same reference numerals will be given to the components showing the same functional operation as those shown in FIG. The liquid crystal display substrate according to the present example has a TFT using polysilicon (p-Si) for the operation semiconductor layer 52. First, a SiN film having a thickness of 50 nm, a SiO 2 film having a thickness of 200 nm, and an a-Si layer having a thickness of 40 nm, for example, is formed on the glass substrate 12, and heat-treated in an annealing furnace to extract hydrogen. Is done. Next, a-Si layer is irradiated with a predetermined laser to crystallize and patterned to form a p-Si layer. Next, for example, an SiO 2 film having a film thickness of 110 nm and AlNd having a film thickness of 300 nm are formed and patterned to form an insulating film (gate insulating film) 24 and a gate bus line 25.

Next, phosphorus (P) is ion-doped to the p-Si layer to selectively form an N-type region, and then boron (B) is ion-doped to the p-Si layer to selectively form a P-type region. Next, for example, a SiO 2 film having a thickness of 60 nm and a SiN film having a thickness of 370 nm are formed to form an interlayer insulating film. Subsequently, an interlayer insulating film on the high concentration impurity region is opened to form a contact hole. Next, for example, a Ti layer having a thickness of 100 nm, an Al layer having a thickness of 200 nm, and a Ti layer having a thickness of 100 nm are formed by film formation and patterning, and the drain electrode 44 and the source electrode 46 are formed. . Through the above steps, the TFT 70 using p-Si for the operation semiconductor layer is completed. In addition, in this embodiment, the storage capacitor bus line and the storage capacitor electrode are not formed, but the storage capacitor bus line is simultaneously formed of the same formation material as the gate bus line, and the storage capacitor electrode is formed of the same formation material as the source / drain electrodes. It may be formed at the same time.

Although the uppermost metal layer is covered by the resin CF layer first formed in the above embodiment, the uppermost metal layer may be covered by the resin serving as a part of the BM resin or the columnar spacer before the resin CF layer is formed. In the above embodiment, BM is formed by stacking two layers of the first and second resin CF layers or the first and the third resin CF layers on the TFT 42 and each of the bus lines 25, 26, and 62. All three layers of the resin CF layer may be laminated to form a BM. If the BM is formed by another process, the resin CF layer may not be laminated.

Further, in the above embodiment, since the liquid crystal display device using the pretilt angle applying technique using the polymer is taken as an example, the slits 20 and the fine slits 21 are formed on the pixel electrode 14, The structure may be formed. Moreover, in the said Example, although the whole metal layer which is the uppermost layer is covered by the resin CF layer, you may make it cover only the edge part of the uppermost metal layer. In addition, the substrate for a liquid crystal display device does not have a storage capacitor bus line 62 of the same formation material as the gate bus line 25 or a storage capacitor electrode 64 of the same formation material as the source / drain electrodes 44 and 46. You can also make the structure.

As described above, in the present embodiment, the source / drain metal layer (the gate metal layer in the top gate structure) is formed so as to be covered with the resin CF layer to be formed first. Therefore, the source / drain metal layer is not eroded by the CF developer during patterning of the resin CF layer. Therefore, the resistance value of the bus line does not increase or the bus line is disconnected, so that the manufacturing yield is improved. In addition, the operation semiconductor layer 52 is not contaminated. In addition, the manufacturing process does not increase because there is no need to form a protective film on the source / drain metal layer.                     

In the liquid crystal display device according to the present embodiment, luminance deterioration or nonuniformity caused by a drop in the retention rate does not occur, and pattern burn-in does not occur. In addition, since the resin CF layers (R, G, B) formed on the upper layer of the TFT 42 absorb ultraviolet rays irradiated when forming the polymer structure, crosstalk or flicker due to abnormality of the characteristics of the TFT 42 is prevented. No display defects occur.

In addition, in the liquid crystal display device according to the present embodiment, a wide viewing angle can be obtained because the liquid crystal molecules are aligned in four directions, and high contrast can be obtained by the vertical alignment. In addition, the inclination direction of the liquid crystal molecules is defined by the polymer structure, whereby high-speed response characteristics can be realized.

The present invention is not limited to the above embodiment, and various modifications are possible.

For example, in the above embodiment, the pixel electrode 14 is formed directly on the resin CF layers R, G, and B. However, the present invention is not limited thereto, and the resin CF layers R, G, and B are provided. A protective film made of an organic material or an inorganic material may be formed thereon, and the pixel electrode 14 may be formed over the protective film. By forming a protective film, it becomes possible to prevent contamination of the liquid crystal by the resin CF material, or to prevent the disconnection by reducing the step difference of the pixel electrode 14. In addition, the formation order of resin CF layer (R, G, B) is arbitrary, The formation material or layer structure, film thickness, etc. of TFT 42 and resin CF layer (R, G, B) are not limited to the said embodiment, either. Do not.

In the above embodiment, the transmissive liquid crystal display device has been described, but the present invention is not limited thereto, and the present invention can also be applied to a reflective liquid crystal display device. In addition, although the said embodiment demonstrated the MVA system liquid crystal display device, this invention is not limited to this, It is applicable to other liquid crystal display devices, such as TN mode.

The board | substrate for liquid crystal display devices which concerns on 1st Embodiment mentioned above, the liquid crystal display device provided with the same, and its manufacturing method are put together as follows.

(Book 1)

A substrate sandwiching a liquid crystal having negative dielectric anisotropy with an opposing substrate disposed to face each other, a plurality of gate bus lines formed on the substrate, a plurality of drain bus lines formed on the substrate crossing the gate bus lines, Orientation regulation of a pixel region defined by the gate bus line and the drain bus line, a thin film transistor formed in each pixel region, a resin color filter layer formed in each pixel region, a pixel electrode formed in each pixel region, and the liquid crystal In order to have an alignment control structure formed on the substrate for a liquid crystal display device substrate.

(Supplementary Note 2)

A liquid crystal display device substrate according to Appendix 1, further comprising a light shielding film for shielding an end portion of the pixel region.

(Supplementary Note 3)

The liquid crystal display device substrate according to Appendix 2, wherein the light shielding film is formed by stacking the resin color filter layers.                     

(Appendix 4)

The liquid crystal display device substrate according to Supplementary Notes 1 to 3, wherein the pixel electrode is formed on the resin color filter layer.

(Supplementary Note 5)

The liquid crystal display device substrate according to Appendix 4, wherein the pixel electrode is formed so as to overlap the drain bus line in a direction perpendicular to the substrate surface.

(Supplementary Note 6)

The liquid crystal display device substrate according to Appendix 4, wherein the pixel electrode is formed so as not to overlap the drain bus line in a direction perpendicular to the substrate surface.

(Appendix 7)

The liquid crystal display device substrate according to any one of Supplementary Notes 1 to 6, wherein the alignment regulating structure is a linear protrusion.

(Appendix 8)

The liquid crystal display device substrate according to any one of Supplementary Notes 1 to 7, further comprising a columnar spacer for maintaining a cell gap, wherein the columnar spacer is formed by stacking a resin layer formed on the substrate. A liquid crystal display substrate.                     

(Appendix 9)

The liquid crystal display device substrate according to Appendix 8, wherein the resin layer includes the resin color filter layer.

(Book 10)

The liquid crystal display device substrate according to Appendix 8 or 9, wherein the resin layer includes a black resin layer.

(Appendix 11)

The liquid crystal display device substrate according to any one of Supplementary Notes 8 to 10, wherein the resin layer includes a formation layer of the linear protrusion.

(Appendix 12)

A substrate sandwiching a liquid crystal having negative dielectric anisotropy with an opposite substrate disposed to face each other, a linear protrusion formed on the substrate to align the liquid crystal and an alignment material formed on the substrate with the same forming material as the linear protrusion, It has a position alignment mark used when bonding with a board | substrate, The board | substrate for liquid crystal display devices characterized by the above-mentioned.

(Appendix 13)

A substrate sandwiching a liquid crystal having negative dielectric anisotropy with an opposing substrate disposed opposite to each other, a linear protrusion formed on the substrate to align the liquid crystal, and a forming material formed at the end of the display region on the substrate, the same forming material as the protrusion. And a frame area for shielding an end portion of the display area.

(Book 14)

The liquid crystal display device substrate according to Appendix 12 or 13, wherein the projection is formed of a black resin.

(Supplementary Note 15)

The liquid crystal display device substrate according to Appendix 12 or 13, wherein the projection is formed by laminating a metal layer and a resist layer.

(Appendix 16)

A liquid crystal display device having two substrates and a liquid crystal sealed between the substrates, wherein at least one of the substrates uses a liquid crystal display device substrate according to supplementary notes 1 to 15.

(Appendix 17)

A columnar spacer formed by joining the first substrate on which the first resin layer is formed, the second substrate on which the second resin layer is formed, the first and second substrates to form the first and second resin layers, and the first And a liquid crystal sealed between the second substrate.

(Supplementary Note 18)

A method of manufacturing a substrate for a liquid crystal display device, comprising forming a common electrode on a substrate, and forming alignment marks on the substrate at the same time when forming a linear protrusion on the common electrode.

(Appendix 19)

A method of manufacturing a substrate for a liquid crystal display device, comprising forming a common electrode on a substrate and forming a frame region on the substrate at the same time as forming a linear protrusion on the common electrode.

(Book 20)

A method of manufacturing a substrate for a liquid crystal display device, wherein a plurality of bus lines and thin film transistors which cross each other are formed on a substrate, and columnar spacers are formed at the same time when the linear protrusions are formed on the substrate.

The liquid crystal display device substrate, the manufacturing method thereof, and the liquid crystal display device including the same according to the second embodiment described above are arranged as follows.

(Book 21)

A first substrate, a plurality of bus lines formed on the first substrate to cross each other, a pixel region defined by the bus lines, a thin film transistor formed for each pixel region, a resin color filter layer formed for each pixel region, A thin film transistor substrate having pixel electrodes formed in each of the pixel regions, a second substrate having a thickness or material different from that of the first substrate, and a common electrode formed on the second substrate, and facing the first substrate. And a liquid crystal sealed between the common electrode substrate disposed and the thin film transistor substrate and the common electrode substrate.

(Supplementary Note 22)

The liquid crystal display device according to Appendix 21, wherein the second substrate is thinner than the first substrate.

(Supplementary Note 23)

The liquid crystal display device according to appendix 21 or 22, wherein the second substrate is lighter in weight than the first substrate.

(Book 24)

The liquid crystal display device according to any one of Supplementary Notes 21 to 23, wherein the second substrate is formed of a glass material containing an alkali component.

(Book 25)

The liquid crystal display device according to Appendix 24, wherein the glass material contains 1% or more of an alkali component.

(Book 26)

The liquid crystal display device according to any one of Supplementary Notes 21 to 23, wherein the second substrate is formed of a resin material.

(Supplementary Note 27)

The liquid crystal display device according to any one of Supplementary Notes 21 to 26, further comprising a columnar spacer which maintains a distance between the thin film transistor substrate and the common electrode substrate.

(Supplementary Note 28)

The liquid crystal display device according to any one of appendices 21 to 27, wherein the thin film transistor substrate is on the display screen side.

(Supplementary Note 29)

The liquid crystal display device according to Appendix 28, wherein the bus lines are formed of a material of low reflection at least on the surface of the first substrate side.

(Book 30)

The liquid crystal display device according to appendix 28 or 29, wherein the drain electrode and the source electrode of the thin film transistor have at least a surface of the first substrate side formed of a low reflection material.

The board | substrate for liquid crystal display devices, its manufacturing method, and the liquid crystal display device provided with the same which concerns on 3rd Embodiment mentioned above are put together as follows.

(Supplementary Note 31)

A substrate sandwiching the liquid crystal between the substrates facing each other, a plurality of gate bus lines formed on the substrate, a plurality of drain bus lines intersecting the gate bus lines, and formed on the substrate; A pixel region defined by the drain bus line, a thin film transistor formed in each pixel region, a resin color filter layer formed in each pixel region, a pixel electrode formed in each pixel region, a source / train electrode of the thin film transistor, and And a resin layer formed to cover the drain bus line.

(Appendix 32)

A substrate for a liquid crystal display device according to Appendix 31, wherein the resin layer is formed of the resin color filter layer.

(Supplementary Note 33)

The liquid crystal display device substrate according to Appendix 32, wherein the resin color filter layer having a different color is laminated on the resin layer.

(Book 34)

A substrate for a liquid crystal display device according to Appendix 31, wherein the resin layer contains black resin.

(Supplementary Note 35)

The liquid crystal display device substrate according to Appendix 31, wherein the resin layer includes a columnar spacer forming layer.

(Book 36)

A liquid crystal display device having two substrates and a liquid crystal layer sealed between the substrates, wherein a liquid crystal display device substrate according to notes 31 to 35 is used on one side of the substrate.                     

(Book 37)

The liquid crystal display device according to Appendix 36, wherein the liquid crystal layer has a polymer structure.

(Supplementary Note 38)

A thin film transistor is formed on the substrate, a first resin color filter layer is formed to cover the source / drain electrodes and the drain bus line of the thin film transistor, a second resin color filter layer is formed in another pixel region, and another pixel region is formed. The 3rd resin color filter layer is formed, The manufacturing method of the board | substrate for liquid crystal display devices characterized by the above-mentioned.

As described above, according to the present invention, a liquid crystal display device having high luminance and good display characteristics can be obtained.

Claims (11)

  1. delete
  2. delete
  3. A base substrate sandwiching a liquid crystal having negative dielectric anisotropy with an opposing substrate disposed to face each other;
    Linear protrusions formed on the base substrate to regulate the liquid crystal;
    A substrate for a liquid crystal display device, formed of the same formation material as the linear projections on the base substrate, and having alignment marks for use in bonding to the opposing substrate.
  4. A base substrate sandwiching a liquid crystal having negative dielectric anisotropy with an opposing substrate disposed to face each other;
    Linear protrusions formed on the base substrate to regulate the liquid crystal;
    And a frame region formed at the end of the display region on the base substrate with the same formation material as the projections and shielding the end of the display region.
  5. delete
  6. Forming a common electrode on the substrate,
    And forming a mark for alignment on the substrate at the same time when the linear protrusion is formed on the common electrode.
  7. Forming a common electrode on the substrate,
    And forming a frame region for shielding an end portion of the display region on the substrate when the linear protrusion is formed on the common electrode.
  8. delete
  9. delete
  10. delete
  11. delete
KR1020020033793A 2001-06-29 2002-06-17 Thin film transistor substrate, substrate for liquid crystal display and manufacturing method of substrate for liquid crystal display KR100805287B1 (en)

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