KR100773403B1 - Arrangement method for deposition apparatus of point source and deposition apparatus - Google Patents

Abstract

According to the present invention, as the evaporation source of which a plurality is arranged in series while facing the substrate is arranged so that the height difference gradually increases from the outside to the center, the uniformity of the thin film can be secured without being limited to a specific substrate size and the efficiency of the deposition material is improved. It relates to a vapor deposition apparatus and an evaporation source arrangement method of the vapor deposition apparatus.

In the deposition apparatus in which the evaporation source is provided in the configuration of the deposition apparatus according to the present invention, a plurality of the evaporation sources are arranged in series and have a vertical distance from the substrate provided in a state spaced upwardly from each other. It is equipped with.

Deposition equipment, organic materials, metallic materials, evaporation source, array, lifting means, deposition uniformity

Description

ARRANGEMENT METHOD FOR DEPOSITION APPARATUS OF POINT SOURCE AND DEPOSITION APPARATUS

1 is a cross-sectional view showing a conventional deposition apparatus.

2 is a front view showing an evaporation source of a conventional deposition apparatus.

3 is a side view illustrating an evaporation source of a deposition apparatus according to an embodiment of the present invention.

Figure 4 is a process chart according to the evaporation source arrangement method of the deposition apparatus of the present invention.

<Description of Symbols for Main Parts of Drawings>

120: point source 122: lifting means

S: Substrate

According to the present invention, as the evaporation source of which a plurality is arranged in series while facing the substrate is arranged so that the height difference gradually increases from the outside to the center, the uniformity of the thin film can be secured without being limited to a specific substrate size and the efficiency of the deposition material is improved. It relates to a vapor deposition apparatus and an evaporation source arrangement method of the vapor deposition apparatus.

In general, EL (Electro luminecence) device is a spontaneous light emitting display device, attracting attention as a next generation display device because it has the advantages of wide viewing angle, excellent contrast and fast response speed. EL devices are classified into inorganic EL devices and organic EL devices according to materials for forming an emitting layer, and organic EL devices have excellent luminance, driving voltage, and response speed characteristics and are capable of multicoloring, compared to inorganic EL devices. have.

Recently, with the rapid development of information and communication technology and the expansion of the market, a flat panel display has been spotlighted as a display device. Such flat panel displays include liquid crystal displays, plasma display panels, organic light emitting diodes, and the like.

 Among them, organic light emitting diodes (OLEDs) have very good advantages, such as fast response speed, lower power consumption than conventional liquid crystal display devices, light weight, and can be made ultra thin because no separate back light device is required. It is attracting attention as a next generation display element.

Such an organic light emitting device is a principle in which an appropriate energy difference is formed on the organic thin film and emits light by applying a voltage between the anode and the cathode by coating an anode film, an organic thin film, and a cathode film on a substrate. That is, the excitation energy left by recombination of injected electrons and holes is generated as light. At this time, since the wavelength of the light generated according to the amount of the dopant of the organic material can be adjusted, it is possible to implement full color.

The detailed structure of the organic light emitting device is an anode, a hole injection layer, a hole transfer layer, an emitting layer, an electron transport layer, an electron injection layer ( An eletron injection layer and a cathode are stacked in this order. In this case, indium tin oxide (ITO) having a small surface resistance and good permeability is mainly used as the anode. And an organic thin film is a hole injection layer, a hole transport layer, light emitting layer, an electron transport layer to enhance the emission efficiency, is comprised of multi-layer of electron injection layer, an organic material used for the light emitting layer is Alq _3, TPD, PBD, m-MTDATA, TCTA, etc. to be. In addition, a LiF-Al metal film is used as the cathode. In addition, since the organic thin film is very weak to moisture and oxygen in the air, an encapsulation film is formed on the top to increase the life time of the device.

The driving of the organic light emitting device having the structure as described above is performed as follows. First, when a voltage is applied between the selected anode and the cathode, holes injected from the selected anode move in the light emitting layer via the hole transport layer. Meanwhile, electrons injected from the electron injection layer from the cathode are injected into the emission layer via the electron transport layer, and carriers recombine in the emission layer region to generate excitons. This exciton is changed from an excited state to a ground state, whereby an image is formed by the light emission of the molecules on which the light emitting layer is formed.

The organic light emitting device configured and operated as described above deposits the above-described electrode layer and the organic thin film layer on the upper surface of the substrate for each pixel by using a metal deposition mask in order to realize three colors of red, blue, and green colors during fabrication. Doing.

In the conventional deposition apparatus, as shown in FIGS. 1 and 2, the deposition chamber 1 and the deposition material having the substrate S provided thereon in a vacuum state are vaporized by a heat source to supply the substrate S to the substrate S. Largely composed of a plurality of evaporation sources (2), the deposition is performed while the evaporation source (2) moves along the substrate (S).

Here, the deposition chamber 1 is a place where the atmospheric pressure and the vacuum state is circulated while depositing the substrate S therein, and a vacuum pump (not shown in the drawing) is formed at the bottom edge of the deposition chamber 1. The internal pressure of the deposition chamber 1 is lowered.

That is, in order to deposit the pure organic material or the metal material on the surface of the substrate S, the organic material or the metal material should be deposited while the impurities inside the deposition chamber 1 are removed. 1) Suction and remove the gas inside.

And the evaporation source (2) is arranged in a line number corresponding to the length of the long side of the substrate (S), the opening hole formed in the center of the upper surface while being spaced apart from the substrate (S) by a predetermined interval (not shown in the figure) The height difference with these board | substrates S is all the same.

As a result, the vertical evaporation height of each of the evaporation sources 2 and the substrate S is the same.

However, although the deposition uniformity is required when the substrate S is deposited, when the deposition is completed, the thickness of the substrate S is formed in a wave shape when the thin film at the edge and the center of the substrate S is viewed.

Furthermore, the height a of the lowest point at the highest point of the center thickness waveform of the substrate S facing the point evaporation source 2 except for the outside of the point evaporation source 2, the outside point evaporation source 2 and The sum of the height b of the highest point and the lowest point of the thickness waveform corresponding to the edge portion of the opposite substrate S becomes the deposition uniformity range a + b.

As a result, when the substrate S is deposited, the thickness of the outer thin film is relatively thinner than that of the center portion, so that the deposition uniformity is lowered and the efficiency of the deposition material is lowered.

In addition, although not shown in the drawing, the diameter of the opening hole of the evaporation source 2 is increased or decreased, thereby increasing the diameter of the opening of the external evaporation source 2 and reducing the diameter of the evaporation source 2 of the center. Attempt to secure uniformity, but as the area of the substrate S increases, the number of the evaporation sources 2 increases, which makes it difficult to control the diameter of the opening hole.

The present invention has been made to solve the above problems, the object of the present invention is to limit the specific substrate size by arranging such that the difference in height gradually increases from the outside to the center of the evaporation source is arranged in series with a plurality of opposed to the substrate The present invention provides a deposition apparatus and a method of arranging an evaporation source of the deposition apparatus capable of securing the uniformity of the thin film and improving the efficiency of the deposition material.

In order to achieve the above object, the present invention provides a deposition apparatus having an evaporation source therein, wherein a plurality of the evaporation sources are arranged in series and have a vertical line distance from the substrate provided in a state spaced upwardly. By differentiating, it is preferable because the uniformity of the thin film thickness can be ensured during substrate deposition.

Hereinafter, with reference to the accompanying drawings, the deposition apparatus of the present invention and the method of arranging the evaporation source of the deposition apparatus will be described with reference to an embodiment as follows.

Although not shown in the drawings, the deposition apparatus according to the preferred embodiment of the present invention has the same structure and function as that of the related art, and thus detailed description thereof will be omitted. However, since the evaporation source 120 is different from the conventional one, only the evaporation source 120 will be described.

In addition, the deposition apparatus ensures uniformity in the deposition of the large substrate (S) by the movement of any one selected from the evaporation source 120 or the substrate (S).

The point evaporation source 120 has an opening hole (not shown in the figure) is formed on the upper surface as shown in FIG. 3 and vaporizes the deposition material by the heat source to supply the substrate S. A plurality of them are arranged in series in proportion to the area of the substrate S located above.

Here, the arrangement interval when the evaporation source 120 is disposed is formed so that the deposition range of the neighboring evaporation source 120 partially overlaps at both sides.

Further, the incremental evaporation source 120 is provided with a lifting means 122 for raising and lowering the height of the evaporation source 120 on the bottom thereof. And the elevating means 122 is provided for each of the evaporation source 120 is uniformly moved along the guide (not shown in the figure) in the horizontal direction.

In addition, although not shown in the drawing, the evaporation source 120 includes a crucible (not shown in the drawing), which is a place where deposition material is filled, and a heating means provided on the circumferential surface of the crucible to provide a heat source to the crucible by an applied power source. It is further provided. And the above-mentioned deposition material is an organic material or a metal material.

The lifting means 122 serves to finely adjust the height of the evaporation source 120, and converts the rotational motion of the cylinder or linear motor (L / M) or drive motor and the drive motor into linear reciprocating motion. It is applied by a screw or the like.

In particular, the evaporation source 120 is arranged so that the vertical line distance with the substrate (S) spaced upward among the plurality of different from each other, but the evaporation source 120 is provided on the outermost is provided in the middle except the outside Incrementally higher position than the evaporation source 120 is provided.

As a result, the evaporation source 120 is provided at equal intervals and at the same symmetrical position so that the height of the evaporation source 120 increases and decreases toward the center from the outside.

And each of the evaporation source 120 is provided on the outside is the same as the top height is elevated by the elevating means 122, and the rest of the evaporation source 120 is also elevated by the elevating means (122).

On the other hand, the number of times when the evaporation source 120 is arranged to be limited to six in this embodiment, it is possible to change the change depending on the increase and decrease.

In addition, a detection means (not shown in the drawing) that is a thickness control sensor that detects a deposition material sprayed at a height similar to the substrate S while facing the opening hole of each evaporation source 120 at the upper side of the evaporation source 120. It is further provided to detect the supply amount and density of the deposition material supplied from the evaporation source 120 and control the detected signal from the controller (not shown in the drawing) to adjust the thickness of the thin film by adjusting the evaporation rate of the deposition material have.

Therefore, the process of vaporizing and depositing the deposition material on the substrate loaded by the evaporation source of the deposition apparatus of the present invention is carried out by vaporizing the deposition material filled in the crucible by the heat source of the heating means as shown in FIG. S) is supplied to the evaporation source 120 is provided at the bottom of the substrate (S) at this time, a plurality of bar is arranged in series, of which the difference in height between the outer and the center.

That is, the evaporation source 120 formed on the outside of the evaporation source 120 is formed at a position that is progressively lower at a position closer to the substrate S than the evaporation source 120 formed at the center, so that the evaporation source 120 is formed at a relatively central portion. By supplying the deposition material through the formed evaporation source 120 to the same as the evaporation source 120 formed on the outside it is possible to obtain a uniform film thickness at the time of deposition.

As a result, the deposition rate is lowered at the evaporation source 120 of both ends of the evaporation source 120 during deposition, so that the height of the evaporation source 120 formed on the outside is raised by the corresponding lifting means 122 and the center thereof. In the thin film of the corrugated shape after deposition, the thickness is gradually lowered to the center of the thickness waveform, which is a vertical line from the center of the evaporation source 120, with the center between the topmost point of the thickness waveform and the neighboring evaporation source 120. The height a 'of the lowest point of the thickness waveform, which is a vertical line position, becomes the deposition uniformity range.

The evaporation source arrangement method of the deposition apparatus of the present invention includes an evaporation source arrangement step (S200), an evaporation height adjustment step (S210), and an external evaporation source raising step (S220) as shown in FIG.

The evaporation source arrangement step (S200) is a step of placing a plurality of evaporation source 120 in series on the inner bottom of the deposition chamber (not shown in the figure), each of the evaporation source 120 is disposed at equal intervals The arrangement interval of the evaporation source 120 is formed so that the deposition range of the neighboring evaporation sources 120 partially overlap at both ends.

The step of adjusting the height of the evaporation source (S210) is a step of uniformly raising the plurality of evaporation sources 120 arranged in series by the elevating means 122 independently provided for each of the evaporation sources 120.

The external evaporation source raising step (S220) is to increase the evaporation source 120 is provided at both ends in the state in which the evaporation source 120 is raised to the substrate (S) uniformly to correspond to the thin film thickness set in advance during deposition. After the experiment is carried out by the elevating means 122 to uniform the deposition is a step of raising as close to the substrate (S) by a height based on the data generated.

That is, the deposition of the evaporation source 120 is positioned to be higher than the height of the evaporation source 120 provided in the middle portion except the outside of the evaporation source 120 located on both sides of the evaporation source 120 is relatively uneven The deposition rate of the edge and the intermediate portion of the substrate S is made the same.

The deposition apparatus of the present invention and the method of arranging the evaporation source of the evaporation apparatus are not limited to a specific substrate size as the evaporation sources in which a plurality of the evaporation sources arranged in series are arranged so as to gradually increase in height from the outside to the center. It is possible to secure the uniformity of the thin film without improving the efficiency of the deposition material.

Claims (10)

In the vapor deposition apparatus provided with an evaporation source, The plurality of incremental sources are arranged in series in a symmetrical position, but the vertical increments of the plurality of incremental sources are different from each other , and the incremental sources provided on the outermost side of the plurality of incremental sources are gradually increased from the middle of the plurality of incremental sources except for the outside. And a lifting means for finely adjusting the height of each of the evaporation sources positioned at the outermost and central portions at the lower portion of the evaporation source so as to be uniformly lifted . delete delete delete delete The method of claim 1, Deposition apparatus is characterized in that the deposition uniformity is secured by any one of the evaporation source or the substrate selected. In the arrangement method of the evaporation source provided in the vapor deposition apparatus, 1) arranging a plurality of the evaporation sources in a line symmetrical position ; 2) partially adjusting the height of the evaporation source to be symmetrical ; Evaporation source array method of the deposition apparatus comprising a. According to claim 7, wherein the evaporation source in step 1), An evaporation source arrangement method of a deposition apparatus, characterized in that arranged at equal intervals. The method of claim 8, wherein in step 1), And an array interval of the evaporation source is formed so that the deposition ranges of the neighboring evaporation sources partially overlap each other. The method of claim 9, wherein in step 2), While finely adjusting the height of each of the evaporation source, the deposition of the evaporation source is positioned to be higher than the height of the evaporation source provided in the middle portion other than the outside of the evaporation source located on both sides of the evaporation source Incremental source arrangement method of the device.

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