KR100770820B1 - 반도체 장치 및 그 제조 방법 - Google Patents

반도체 장치 및 그 제조 방법 Download PDF

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Publication number
KR100770820B1
KR100770820B1 KR1020060084012A KR20060084012A KR100770820B1 KR 100770820 B1 KR100770820 B1 KR 100770820B1 KR 1020060084012 A KR1020060084012 A KR 1020060084012A KR 20060084012 A KR20060084012 A KR 20060084012A KR 100770820 B1 KR100770820 B1 KR 100770820B1
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South Korea
Prior art keywords
insulating film
film
disposed
density
type insulating
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Expired - Fee Related
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KR1020060084012A
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English (en)
Korean (ko)
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KR20070096758A (ko
Inventor
가즈아끼 이와사와
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가부시끼가이샤 도시바
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6506—Formation of intermediate materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6687—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
    • H10P14/6689—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/906—Cleaning of wafer as interim step

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Element Separation (AREA)
KR1020060084012A 2006-03-27 2006-09-01 반도체 장치 및 그 제조 방법 Expired - Fee Related KR100770820B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006085744A JP5132068B2 (ja) 2006-03-27 2006-03-27 半導体装置及びその製造方法
JPJP-P-2006-00085744 2006-03-27

Publications (2)

Publication Number Publication Date
KR20070096758A KR20070096758A (ko) 2007-10-02
KR100770820B1 true KR100770820B1 (ko) 2007-10-26

Family

ID=38638817

Family Applications (1)

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KR1020060084012A Expired - Fee Related KR100770820B1 (ko) 2006-03-27 2006-09-01 반도체 장치 및 그 제조 방법

Country Status (3)

Country Link
US (1) US7803721B2 (https=)
JP (1) JP5132068B2 (https=)
KR (1) KR100770820B1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008010537A (ja) * 2006-06-28 2008-01-17 Toshiba Corp Ｎａｎｄ型不揮発性半導体記憶装置およびｎａｎｄ型不揮発性半導体記憶装置の製造方法
JP2009076638A (ja) 2007-09-20 2009-04-09 Toshiba Corp 半導体装置の製造方法
KR20100027388A (ko) * 2008-09-02 2010-03-11 삼성전자주식회사 반도체 소자의 절연막 및 그를 이용한 반도체 소자의 형성방법
US8080463B2 (en) * 2009-01-23 2011-12-20 Kabushiki Kaisha Toshiba Semiconductor device manufacturing method and silicon oxide film forming method
US11600628B2 (en) * 2020-01-15 2023-03-07 Globalfoundries U.S. Inc. Floating gate memory cell and memory array structure
US11222825B2 (en) * 2020-03-10 2022-01-11 Micron Technology, Inc. Integrated circuitry, memory arrays comprising strings of memory cells, methods used in forming integrated circuitry, and methods used in forming a memory array comprising strings of memory cells

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990065028A (ko) * 1998-01-05 1999-08-05 윤종용 반도체 장치의 트랜치 소자 분리 방법
KR20000059513A (ko) * 1999-03-04 2000-10-05 황인길 반도체 소자 분리를 위한 얕은 트렌치 제조 방법
KR20030000436A (ko) * 2001-06-25 2003-01-06 주식회사 하이닉스반도체 반도체 소자의 격리막 제조방법
KR20040008874A (ko) * 2002-07-19 2004-01-31 삼성전자주식회사 반도체 장치의 소자 분리 방법
JP2005175277A (ja) 2003-12-12 2005-06-30 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法

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Publication number Priority date Publication date Assignee Title
JP2834667B2 (ja) * 1994-03-25 1998-12-09 川崎製鉄株式会社 半導体装置の製造方法
FR2734811B1 (fr) * 1995-06-01 1997-07-04 Saint Gobain Vitrage Substrats transparents revetus d'un empilement de couches minces a proprietes de reflexion dans l'infrarouge et/ou dans le domaine du rayonnement solaire
TW444252B (en) * 1999-03-19 2001-07-01 Toshiba Corp Semiconductor apparatus and its fabricating method
US6492283B2 (en) * 2000-02-22 2002-12-10 Asm Microchemistry Oy Method of forming ultrathin oxide layer
US6358785B1 (en) * 2000-06-06 2002-03-19 Lucent Technologies, Inc. Method for forming shallow trench isolation structures
US6635565B2 (en) * 2001-02-20 2003-10-21 United Microelectronics Corp. Method of cleaning a dual damascene structure
JP3586268B2 (ja) * 2002-07-09 2004-11-10 株式会社東芝 半導体装置及びその製造方法
JP2005166700A (ja) * 2003-11-28 2005-06-23 Toshiba Corp 半導体装置及びその製造方法
JP2005243709A (ja) 2004-02-24 2005-09-08 Toshiba Corp 半導体装置およびその製造方法
US7524735B1 (en) * 2004-03-25 2009-04-28 Novellus Systems, Inc Flowable film dielectric gap fill process
JP2005332885A (ja) * 2004-05-18 2005-12-02 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
JP4594648B2 (ja) * 2004-05-26 2010-12-08 株式会社東芝 半導体装置およびその製造方法
US7332408B2 (en) * 2004-06-28 2008-02-19 Micron Technology, Inc. Isolation trenches for memory devices
US7521378B2 (en) * 2004-07-01 2009-04-21 Micron Technology, Inc. Low temperature process for polysilazane oxidation/densification
US7361958B2 (en) * 2004-09-30 2008-04-22 Intel Corporation Nonplanar transistors with metal gate electrodes
JP4329740B2 (ja) * 2004-10-22 2009-09-09 セイコーエプソン株式会社 有機エレクトロルミネッセンス装置の製造方法、及び有機エレクトロルミネッセンス装置
US7837838B2 (en) * 2006-03-09 2010-11-23 Applied Materials, Inc. Method of fabricating a high dielectric constant transistor gate using a low energy plasma apparatus
JP2009076638A (ja) * 2007-09-20 2009-04-09 Toshiba Corp 半導体装置の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990065028A (ko) * 1998-01-05 1999-08-05 윤종용 반도체 장치의 트랜치 소자 분리 방법
KR20000059513A (ko) * 1999-03-04 2000-10-05 황인길 반도체 소자 분리를 위한 얕은 트렌치 제조 방법
KR20030000436A (ko) * 2001-06-25 2003-01-06 주식회사 하이닉스반도체 반도체 소자의 격리막 제조방법
KR20040008874A (ko) * 2002-07-19 2004-01-31 삼성전자주식회사 반도체 장치의 소자 분리 방법
JP2005175277A (ja) 2003-12-12 2005-06-30 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法

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US7803721B2 (en) 2010-09-28
US20070284649A1 (en) 2007-12-13
JP5132068B2 (ja) 2013-01-30
KR20070096758A (ko) 2007-10-02
JP2007266081A (ja) 2007-10-11

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