KR100723627B1 - Evaporator for organic thin film vapor deposition - Google Patents

Evaporator for organic thin film vapor deposition Download PDF

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KR100723627B1
KR100723627B1 KR1020060072778A KR20060072778A KR100723627B1 KR 100723627 B1 KR100723627 B1 KR 100723627B1 KR 1020060072778 A KR1020060072778 A KR 1020060072778A KR 20060072778 A KR20060072778 A KR 20060072778A KR 100723627 B1 KR100723627 B1 KR 100723627B1
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crucible
side
thin film
organic thin
material
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KR1020060072778A
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Korean (ko)
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장정원
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세메스 주식회사
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12Organic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/243Crucibles for source material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/26Vacuum evaporation by resistance or inductive heating of the source
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/0001Processes specially adapted for the manufacture or treatment of devices or of parts thereof
    • H01L51/0002Deposition of organic semiconductor materials on a substrate
    • H01L51/0008Deposition of organic semiconductor materials on a substrate using physical deposition, e.g. sublimation, sputtering
    • H01L51/001Vacuum deposition
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/50Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED];
    • H01L51/56Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof

Abstract

An evaporating source for depositing an organic thin film is provided to prevent a deposition material from being spread by using a pressure of the deposition material and a direction of a side injection nozzle, not an injection angle of a nozzle. An evaporating source for depositing an organic thin film includes a crucible(100) to receive a deposition material, a heating device(90) to heat the crucible(100), and a guide unit(10) to divide a region through which the evaporated deposition material flows. The crucible(100) is formed in a shape of a long tube in which a top surface is opened and side and bottom surfaces are closed. The crucible(100) includes an inner space for storing an organic material(50) for deposition. The heating device(90) heats the crucible(100) by being installed in the crucible(100) or an outer wall of the crucible(100). The organic material(50) for deposition in the crucible(100) is evaporated by the temperature rise. The heating device(90) is installed by winding a hot wire around the crucible(100). The guide unit(10) is formed in a shape of a long plate at both sides of the crucible(100) in a lengthwise direction.

Description

유기 박막 증착 장치의 증발원{Evaporator for organic thin film vapor deposition} Evaporation source {Evaporator for organic thin film vapor deposition} of the organic thin film vapor deposition apparatus

도 1은 종래의 노즐에 분사각을 형성하여 증착 물질을 분사시키는 증발원의 단면도이다. 1 is a cross-sectional view of an evaporation source for spraying the deposition material to form a minute square in the conventional nozzle.

도 2는 본 발명의 일 실시예에 따른 유기 박막 증착 장치의 증발원의 단면도이다. 2 is a cross-sectional view of an evaporation source of the organic thin film vapor deposition apparatus according to an embodiment of the present invention.

도 3은 본 발명의 일 실시예에 따른 유기 박막 증착 장치의 증발원의 사시도이다. Figure 3 is a perspective view of the evaporation source of the organic thin film vapor deposition apparatus according to an embodiment of the present invention.

도 4는 본 발명의 다른 일 실시예에 따른 유기 박막 증착 장치의 증발원의 단면도이다. 4 is a cross-sectional view of an evaporation source of the organic thin-film deposition apparatus according to another embodiment of the invention.

도 5는 본 발명의 일 실시예에 따른 사이드 분사구의 방향을 조절하는 유기 박막 증착 장치의 증발원의 단면도이다. 5 is a cross-sectional view of an evaporation source of the organic thin film vapor deposition apparatus to adjust the direction of the side injection hole according to an embodiment of the present invention.

도 6은 본 발명의 다른 일 실시예에 따른 사이드 분사구의 방향을 조절하는 유기 박막 증착 장치의 단면도이다. Figure 6 is a cross-sectional view of an organic thin film vapor deposition apparatus to adjust the direction of the side injection hole according to another embodiment of the present invention.

<도면의 주요 부분에 대한 부호의 설명> <Description of the Related Art>

10: 가이드부 20: 보조가이드부 10: guide portion 20: auxiliary guide portion

30: 중앙 유입구 35: 사이드 유입구 30: a central inlet 35: inlet side

40: 중앙 분사구 45: 사이드 분사구 40: 45 Central Nozzle: Nozzle Side

50: 증착 물질 90: 가열장치 50: deposition material 90: heating device

100: 도가니 100: crucible

본 발명은 유기 박막 증착 장치의 증발원에 관한 것으로, 보다 상세하게는 증발된 증착 물질이 분사되는 압력을 달리하도록 분사구를 형성하여 증착 물질의 사용 효율을 높이는 증발원에 관한 것이다. The present invention forms the ejection port to different, and more particularly to a pressure at which the evaporated vapor deposition material to be sprayed on the evaporation source of the organic thin film vapor deposition apparatus according to the evaporation source to increase the use efficiency of the deposition material.

일반적으로, 유기발광소자를 제조하는 방법은 저분자 물질을 진공 중에 증발시켜 제조하는 방법과, 고분자 물질을 용제에 녹여서 스핀 코팅(spin coating)하는 방법이 알려져 있다. In general, the method of manufacturing an organic light emitting element is a method for method for producing a low-molecular substances were evaporated in vacuo and dissolve the polymer material in a solvent spin coating (spin coating) are known.

이 같은 방법 중에서, 고진공에서 박막을 제작하는 저분자 유기발광소자 제조 방법의 경우 임의의 형상의 개구부를 가지는 쉐도우 마스크를 기판의 앞에 정렬하여 이 기판에 유기물질을 증착하여 박막을 제작하게 된다. Among such methods, in the case of low-molecular organic light-emitting device manufacturing method of manufacturing a thin film in a high vacuum is produced by depositing a thin film of organic material on the substrate by aligning a shadow mask having an opening of any shape in front of the substrate.

이와 같은 박막 제작에는 증발원이 이용된다. In this thin film, the same evaporation source is used. 증발원은 증착 물질을 담는 도가니와 도가니를 가열하는 가열 장치를 포함하여 구성되는데, 가열 장치에 의해 도가니 안의 증착 물질이 가열되어 증발하여 상단에 있는 기판에 증착하여 박막을 형성하게 된다. Evaporation source is composed, including a heating device for heating the crucible and the crucible that holds the deposition material is heated to the deposition material in the crucible by the heating device evaporating to form a thin film deposited on the substrate at the top. 생산성 향상을 위해 대면적 기판을 사용할 경우, 대면적 박막의 균일도가 확보되도록 선형증발원이 필요하게 된다. When using a large area substrate in order to improve productivity, it is necessary to secure the linear evaporation source such that the uniformity of large-area films. 이때, 대면적 기판 또는 선형증발원 이 움직이면서 기판의 전면적에 대해서 증착이 이루어진다. At this time, it is made large area substrate or a linear evaporation source while moving the deposition with respect to the entire area of ​​the substrate.

도 1은 종래의 노즐에 분사각을 형성하여 증착 물질을 분사시키는 증발원의 단면도이다. 1 is a cross-sectional view of an evaporation source for spraying the deposition material to form a minute square in the conventional nozzle.

증착 물질을 담는 도가니(100), 도가니(100)를 가열하는 가열 장치(90), 도가니(100)를 덮고 노즐(210)이 형성된 덮개부(200)를 포함하여 구성된다. It is configured to include a heating device 90, the cover portion 200 covering the crucible 100 in the nozzle 210 is formed, which heats the crucible 100, a crucible 100 that holds the deposition material. 증착 물질이 가열되어 증발원 바깥으로 분사되는 경우 일반적으로 비스코스 플로우(viscos flow) 상태에서 몰러큘러 플로우(molecular flow) 상태로 바뀌게 된다. Is heated to the deposition material is changed in general viscose flow (flow viscos) Moller Circular flow (molecular flow) in the state if the state is injected into the evaporation source outside. 따라서, 증발원으로부터 분사된 증착 물질이 퍼지는 각도를 최소화하는 것이 중요하다. Therefore, it is important that the deposition material injected from the evaporation source to minimize the spread angle. 종래에는 도면에서와 같이 덮개부(200)의 노즐(210)에 분사각을 형성하여 증착 물질이 퍼지는 각도를 최소화하려고 하였다. Conventionally, to the nozzle 210 of the cover portion 200, as shown in the drawings form the minute square was to minimize the angular spread of the deposited material. 그러나, 이러한 방법을 사용할 때에도 증착 물질이 퍼지는 것을 막을 수 없었고, 이는 증착 물질의 사용 효율을 나쁘게 하는 원인이 된다. However, when using this method could not prevent the spread of the deposited material, which causes the deterioration of utilization efficiency of the deposition material.

본 발명은 상기한 문제점을 개선하기 위해 고안된 것으로, 본 발명이 이루고자 하는 기술적 과제는 증발된 증착 물질이 분사되는 압력을 달리하도록 분사구를 형성함으로써 증착 물질의 사용 효율을 높이는 유기 박막 증착을 위한 증발원을 제공하는 것이다. The present invention the technical problem is an evaporation source for the organic thin film deposited to increase the use efficiency of the deposition material to form an injection hole to different that the evaporated deposition material injection pressure another object of the present invention to be designed to improve the above problems to provide.

본 발명의 목적들은 이상에서 언급한 목적들로 제한되지 않으며, 언급되지 않은 또 다른 목적들은 아래의 기재로부터 당업자에게 명확하게 이해될 수 있을 것이다. An object of the present invention are not limited to the above object mentioned above, it is not mentioned yet another object will be able to be clearly understood to those skilled in the art from the following description.

상기 목적을 달성하기 위하여, 본 발명의 실시예에 따른 유기 박막 증착 장치의 증발원은 내부에 증착용 물질을 담는 것으로 긴 통모양의 도가니, 상기 도가니를 가열하는 가열장치 및 상기 도가니 내부에서 긴 판 형상으로 양측에 구비되며, 상부로 갈수록 상기 도가니의 측면과 가까워지도록 경사가 져, 증발된 증착 물질이 관통하는 영역을 나누는 가이드부를 포함하여 구성된다. In order to achieve the above object, the evaporation source is that holds the deposition material therein inside the heating device and the furnace for heating the long tubular of the crucible, the crucible long plate-like organic thin film vapor deposition apparatus according to an embodiment of the present invention as is provided on both sides, becomes such that the closer toward the top of the furnace and the inclined side, and is configured by including a dividing an area for the evaporated deposition material through the guide.

기타 실시예들의 구체적인 사항들은 상세한 설명 및 도면들에 포함되어 있다. Specific details of other embodiments are included in the following description and drawings.

본 발명의 이점 및 특징, 그리고 그것들을 달성하는 방법은 첨부되는 도면과 함께 상세하게 후술되어 있는 실시예들을 참조하면 명확해질 것이다. Methods of accomplishing the advantages and features of the present invention and reference to the embodiments that are described later in detail in conjunction with the accompanying drawings will be apparent. 그러나 본 발명은 이하에서 개시되는 실시예들에 한정되는 것이 아니라 서로 다른 다양한 형태로 구현될 수 있으며, 단지 본 실시예들은 본 발명의 개시가 완전하도록 하고, 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에게 발명의 범주를 완전하게 알려주기 위해 제공되는 것이며, 본 발명은 청구항의 범주에 의해 정의될 뿐이다. However, the invention is not limited to the embodiments set forth herein may be embodied in many different forms, but the present embodiments, and the disclosure of the present invention to complete, and ordinary skill in the art is furnished the chair in order to fully convey the concept of the invention to have, the present invention will only be defined by the appended claims. 명세서 전체에 걸쳐 동일 참조 부호는 동일 구성 요소를 지칭한다 Like reference numerals throughout the specification refer to like elements

이하, 본 발명의 실시예들에 의하여 유기 박막 증착 장치의 증발원을 설명하기 위한 도면들을 참고하여 본 발명에 대해 설명하도록 한다. Or less, by the embodiments of the present invention with reference to views for explaining the evaporation source of the organic thin-film deposition apparatus will be described for the present invention.

도 2는 본 발명의 일 실시예에 따른 유기 박막 증착 장치의 증발원의 단면도이고, 도 3은 본 발명의 일 실시예에 따른 유기 박막 증착 장치의 증발원의 사시도이다. Figure 2 is a cross-sectional view of the evaporation source of the organic thin film vapor deposition apparatus according to an embodiment of the present invention, Figure 3 is a perspective view of the evaporation source of the organic thin film vapor deposition apparatus according to an embodiment of the present invention.

본 발명의 일 실시예에 따른 유기 박막 증착 장치의 증발원은 증착 물질(50)을 담는 도가니(100), 도가니(100)를 가열하는 가열 장치(90), 증발된 증착 물질(50)이 관통하여 흐르는 영역을 나누는 가이드부(10)를 포함하여 구성된다. The evaporation source of the organic thin film vapor deposition apparatus according to an embodiment of the present invention through the heating device 90, the evaporated deposition material 50 to heat the vapor deposition material 50, the crucible 100, a crucible 100 that holds the It is configured to include a guide portion (10) to divide the flowing area.

도가니(100)는 상면은 개방되어 있고 측면과 하면은 닫혀진 긴 통모양의 형상으로 도가니(100)의 내부에 증착용 유기물질(50)이 저장 또는 유지될 수 있도록 내부 공간을 구비한다. The crucible 100 has a top surface is open, and if the side surface is provided with an inner space to increase the organic substance 50 is worn on the inside of the crucible 100 in the shape of a closed, this long cylindrical shape can be stored or maintained.

가열 장치(90)는 도가니(100)에 또는 도가니(100)의 외벽에 형성되어 도가니(100)를 가열한다. The heater 90 is formed in the outer wall of the crucible 100 or the crucible 100 to heat the crucible (100). 도가니(100)의 가열에 의해 도가니(100) 내부에 놓여진 증착 물질(50)은 온도가 상승하여 증발하게 된다. The deposition material 50 by the heat of the crucible 100 is placed inside the crucible 100 is evaporated by the temperature rise. 가열 장치(90)는 열선으로 도가니(100) 주변을 감아 형성될 수 있다. Heating device 90 may be formed of winding the crucible 100 is surrounded by heat rays.

가이드부(10)는 도가니(100) 안에 형성되어 증착 물질(50)이 증발하여 관통하여 흐르는 영역을 나눈다. Guide section 10 and is formed in the crucible 100, the deposition material 50 is evaporated to pass through the flow dividing zone. 가이드부(10)는 도가니(100) 안에서 도가니(100)의 길이 방향으로 양측에 긴 판 형상으로 형성된다. Guide portion 10 is formed in a long plate-like shape on both sides in the longitudinal direction of the crucible 100 in the crucible 100. The 따라서, 가이드부(10)를 형성하는 두 판 사이에 증발된 물질(50)이 관통하여 흐르는 하나의 영역을 형성하게 된다. Thus, the material 50 is evaporated through between the two plates forming the guide portion 10 to form a single region of the flow. 이때, 아래에 증발된 증착 물질(50)이 증발되어 들어가는 부분을 중앙 유입구(30)라 하고 증발원으로부터 분사되어 퍼져나가는 상부를 중앙 분사구(40)라 칭하기로 한다. At this time, the upper part of the deposition material 50 evaporated under evaporates into La central inlet 30 and spreading is injected from the evaporation source is referred to as a central opening (40). 또한, 가이드부(10)의 각 판과 도가니(100)의 측면 벽에 의해 증발된 물질(50)이 관통하여 흐르도록 하는 영역이 양측에 형성된다. In addition, an area for the material 50 is evaporated by the side wall of each crucible and the plate 100 of the guide portion 10 are to pass through the flow are formed on both sides. 증발 물질(50)이 들어가고 분사되는 부분을 각각 사이드 유입구(35)와 사이드 분사구(45)라고 칭하기로 한다. Is referred to a portion evaporation material 50 is injected into each of said side inlets (35) and a side opening (45).

후술할 내용이지만 사이드 유입구(35)와 사이드 분사구(45)는 도가니(100)의 측면 벽 대신에 도 4와 같이 보조 가이드부(20)를 형성하여 만들어질 수도 있다. Although details will be described later to the side inlet (35) and a side opening (45) may be made by forming the auxiliary guide portion 20 as shown in Figure 4, instead of the side wall of the crucible (100).

이때, 가이드부(10)를 형성하는 각 판은 도가니(100) 상단의 분사구(40, 45)로 갈수록 도가니(100) 벽면을 향하여 기울어지도록 형성됨이 바람직하다. In this case, each plate that forms the guide portion 10 is preferably formed such that toward the crucible 100 in the injection hole (40, 45) on the top inclined towards the furnace wall 100. The 기울어지는 각도가 너무 커 가이드부(10)의 상단이 도가니(100)의 측면 벽에 닿아서는 안 된다. The top of the inclined angle too large guide portion 10 is not touch the side wall of the crucible (100). 왜냐하면, 사이드 분사구(45)를 형성할 수 없기 때문이다. This is because it can not form a side opening (45). 바람직하게는 중앙 유입구(30)의 폭보다 사이드 유입구(35)의 폭이 더 크게 형성되도록 한다. Preferably such that the width of the side inlet (35) than the width of the central inlet 30 for a larger form.

따라서, 가이드부(10)에 의해 형성되는 중앙 유입구(30)와 중앙 분사구(40)를 비교해보면 중앙 유입구(30)에 비해 중앙 분사구(40)의 폭이 더 크게 된다. Therefore, compared to the central inlet 30 and a central injection hole 40 formed by the guide portion 10 the width of the central opening (40) is larger than the central inlet 30. 또한, 사이드 유입구(35)는 사이드 분사구(45)보다 그 폭이 더 크게 된다. The side inlet 35 is that its width is larger than the side opening (45).

가열 장치(90)에 의해 가열된 증착 물질(50)이 증발하여 상승하게 되는데, 상대적으로 작은 입구를 가진 중앙 유입구(30)에는 적은 양의 증발 물질(50)이 유입되게 되고, 상대적으로 큰 입구를 가진 사이드 유입구(35)에는 많은 양의 증발 물질(50)이 유입되게 된다. There is the deposition material 50 is evaporated by the rising heated by the heating device 90, and presented relative to the central inlet 30 having a small entrance to less evaporation material 50 from entering the relatively large inlet side inlet 35, a large amount evaporation material 50 of with this is to be introduced. 각 입구를 통해 유입된 증발 물질(50)은 계속 상승하게 되는데, 중앙 유입구(30)로 유입된 물질은 가이드부(10)에 의해 안내되는 폭이 점점 커져 압력이 낮아지게 된다. The vaporized material flows through each inlet 50 there is still elevated, the material flows into the central inlet 30 becomes more and more pressure is lowered large width which is guided by the guide portion 10. 이와 반대로, 사이드 유입구(35)로 유입된 증발 물질(50)은 점점 폭이 작아지도록 안내되어 사이드 분사구(45)를 통하여 분사할 때까지 압력이 점점 높아지게 된다. On the other hand, the inlet side of the evaporation material 50 flows into 35 the pressure is getting increasingly higher until the width of the guide is smaller injection through a side opening (45).

따라서, 중앙에는 적은 양의 물질(50)이 유입되어 유입될 때보다 압력이 더 낮아진 상태로 분사하게 되고, 양 사이드에서는 중앙에 비해 더 많은 양의 물 질(50)이 유입되어 유입될 때보다 압력이 더 높아진 상태로 분사하게 된다. Thus, than the center and be injected into a further lower pressure state than when the inlet flows into the material 50 in a small amount, on both sides in is the more the amount of the substance (50) from entering the inlet than at the center is more increased pressure is sprayed into the state. 사이드 분사구(45)에서 더 높은 압력으로 분사되는 증발 물질(50)은 중앙 분사구(40)에서 분사되는 증발 물질(50)의 분사를 안내하는 역할을 할 수 있으며, 전체적으로 증착 물질(50)이 분사구를 통하여 뻗어나가는 직진성을 향상시킬 수 있다. The evaporation material 50 is injected at a high pressure it can serve to guide the injection of the evaporation material 50 is injected from a central injection hole 40, the overall deposition material 50, the injection hole from the side opening (45) it goes straight to the stretches to improve throughout. 따라서, 퍼져나가는 증착 물질(50)의 양을 줄일 수 있으므로 증착 물질(50)의 사용 효율을 높일 수 있다. Thus, it is possible to reduce the amount of deposited material (50) spreading can increase the use efficiency of the deposition material 50.

도 4는 본 발명의 다른 일 실시예에 따른 유기 박막 증착 장치의 증발원의 단면도이다. 4 is a cross-sectional view of an evaporation source of the organic thin-film deposition apparatus according to another embodiment of the invention.

본 발명의 다른 실시예에 따른 유기 박막 증착 장치의 증발원은 증착 물질(50)을 담는 도가니(100), 도가니(100)를 가열하는 가열 장치(90), 증발된 증착 물질(50)이 관통하여 흐르는 영역을 나누는 가이드부(10)를 포함하여 구성되는데, 이러한 구성요소는 전술한 실시예와 동일하므로 생략하기로 한다. The evaporation source of the organic thin film vapor deposition apparatus according to another embodiment of the present invention through the heating device 90, the evaporated deposition material 50 to heat the vapor deposition material 50, the crucible 100, a crucible 100 that holds the is composed by a guide section 10 divides the flow area, these components will be omitted the same as in the foregoing embodiments.

다만, 전술한 도가니(100)의 측면 벽과 가이드부(10)의 판에 의해 형성되는 사이드 유입구(35)와 사이드 분사구(45)는, 도 4와 같이 가이드부(10)와 상기 도가니(100)의 벽면 사이에 형성되어 도가니(100)의 길이 방향으로 긴 판 형상의 보조 가이드부(20)를 이용하여 만들어질 수 있다. However, the guide portion 10 and the furnace (100 as a side inlet (35) and a side opening (45) is formed by a plate of the side wall and the guide portion 10 of the above-mentioned crucible (100), and 4 ) it may be made of by using the auxiliary guide portion 20 of the long plate-like in the longitudinal direction of the crucible is formed 100 between the wall. 보조 가이드부(20)는 도가니(100) 상단의 분사구(40, 45)로 갈수록 상기 도가니(100) 벽면에 멀어지도록 기울어지면서 형성되어 사이드 분사구(45)의 폭을 작게 하도록 함이 바람직하다. Auxiliary guide portion 20 is preferable to be formed toward As tilted away to the furnace wall 100 to the injection hole (40, 45) at the top of the crucible 100 so as to reduce the width of the side opening (45). 보조 가이드부(20)와 가이드부(10)에 의해 형성되는 사이드 유입구(35)와 사이드 분사구(45)는 역시 사이드 유입구(35)로 유입된 증발 물질(50)이 점차 좁아지는 경로로 안내되어 압력이 점점 높아지게 되어 분사하게 된다. Auxiliary guide portion 20 and guide portion to the side inlet (35) and a side opening (45) formed by 10 is also guided to the path, the evaporated material 50 flows into the side inlet (35) which gradually narrows is getting higher, the pressure is injected.

도 5는 본 발명의 일 실시예에 따른 사이드 분사구의 방향을 조절하는 유기 박막 증착 장치의 증발원의 단면도이고, 도 6은 본 발명의 다른 일 실시예에 따른 사이드 분사구의 방향을 조절하는 유기 박막 증착 장치의 단면도이다. 5 is a cross-sectional view of an evaporation source of the organic thin film vapor deposition apparatus to adjust the direction of the side injection hole according to an embodiment of the present invention, Figure 6 is an organic thin film vapor deposition for controlling the orientation of the side injection hole according to another embodiment of the present invention a cross-sectional view of the device.

도 5와 같이, 가이드부(10)의 분사구 부분의 높이를 도가니(100)의 측벽보다 낮게 하여 사이드 분사구(45)에서 분사되는 증발 물질(50)의 방향이 중앙을 향하도록 할 수 있다. As shown in FIG. 5, it may be the direction of the evaporation material 50 is injected to the height of the injection hole of the guide portion 10 in the side ejection port 45 and below the side walls of the crucible 100 so as to point towards the center. 양측의 사이드 분사구(45)에서 더 높은 압력을 가진 증발 물질(50)이 중앙을 향하여 각도를 가지며 상승하므로 퍼져나가는 증발 물질(50)의 양을 더욱 줄일 수 있다. The evaporation material 50 having a high pressure side from the ejection port 45 of the two sides has a rising angle towards the center, so it is possible to further reduce the amount of spread out evaporation material 50.

전술한 바와 같이 사이드 유입구(35)와 사이드 분사구(45)는 보조 가이드부(20)와 가이드부(10)에 의해서 형성될 수도 있는데, 도 6과 같이, 가이드부(10)의 분사구 부분을 보조 가이드부(20)의 분사구 부분의 높이보다 낮게 하여 사이드 분사구(45)에서 분사되는 증발 물질(50)의 방향이 중앙을 향하도록 할 수 있다. Aid in the injection port portion of the side inlet (35) and a side opening (45) is an auxiliary guide portion 20, and there may also be formed by a guide section 10, as shown in Figure 6, the guide portion 10, as described above the direction of the evaporation material 50 is injected in to below the height of the injection hole of the guide portion 20 side opening (45) may face the center.

본 발명이 속하는 기술분야의 통상의 지식을 가진 자는 본 발명이 그 기술적 사상이나 필수적인 특징을 변경하지 않고서 다른 구체적인 형태로 실시될 수 있다는 것을 이해할 수 있을 것이다. One of ordinary skill in the art will appreciate that the present invention without changing departing from the scope and spirit be embodied in other specific forms. 그러므로 이상에서 기술한 실시예들은 모든 면에서 예시적인 것이며 한정적이 아닌 것으로 이해해야만 한다. Thus the embodiments described above are only to be understood as illustrative and non-restrictive in every respect. 본 발명의 범위는 상기 상세한 설명보다는 후술하는 특허청구의 범위에 의하여 나타내어지며, 특허청구의 범위의 의미 및 범위 그리고 그 균등 개념으로부터 도출되는 모든 변경 또는 변형된 형태가 본 발명의 범위에 포함되는 것으로 해석되어야 한다. The scope of the present invention to fall within the scope of the is represented by the claims below rather than the foregoing description, and all such modifications as derived from the meaning and range and equivalents concept of the claims of this invention It should be interpreted.

상기한 바와 같은 본 발명의 유기 박막 증착 장치의 증발원에 따르면 다음과 같은 효과가 하나 혹은 그 이상 있다. According to the evaporation source of the organic thin film vapor deposition apparatus of the present invention as described above has the following effects: one or more.

첫째, 노즐의 분사각이 아닌 증발 물질의 자체 압력과 사이드 분사구의 방향을 이용하여 증착 물질이 퍼져나가는 것을 막을 수 있다는 장점이 있다. First, there is an advantage that can prevent the deposition material spreading by using the direction of its own pressure and the ejection port side of the evaporation material than the bun square of the nozzle.

둘째, 증착 물질의 직진성을 향상시켜 증착 물질의 사용효율을 높일 수 있다는 장점도 있다. Second, to enhance the straightness of the deposition material is also advantageous in that to improve the use efficiency of the deposition material.

Claims (4)

  1. 내부에 증착용 물질을 담는 것으로 긴 통모양의 도가니; Long cylindrical crucible that holds the deposition material therein;
    상기 도가니를 가열하는 가열장치; A heating device for heating the crucible; And
    상기 도가니 내부에서 긴 판 형상으로 양측에 구비되며, 상부로 갈수록 상기 도가니의 측면과 가까워지도록 경사가 져, 증발된 증착 물질이 관통하는 영역을 나누는 가이드부를 포함하는, 유기 박막 증착 장치의 증발원. The crucible is provided on both sides of the long plate-like shape from the inside, it turned toward the upper portion so that the closer to the crucible side slope, the evaporation source of the organic thin film vapor deposition apparatus, including a dividing an area for the evaporated deposition material through the guide.
  2. 제 1 항에 있어서, According to claim 1,
    상기 가이드부와 상기 도가니의 측면 사이에 긴 판 형상으로 구비되며, 상부로 갈수록 상기 도가니의 측면과 멀어지도록 경사가 진 보조 가이드부를 더 포함하는, 유기 박막 증착 장치의 증발원. The guide part and is provided with a long plate-like between the side of the furnace, toward the upper side of the furnace to become farther and further comprising an auxiliary guide slope is true, the evaporation source of the organic thin film vapor deposition apparatus.
  3. 제 1 항에 있어서, According to claim 1,
    상기 가이드 부는 그 높이를 상기 도가니의 측면보다 낮게 하여 상기 가이드부에 의해 형성되는 사이드 분사구의 방향이 중앙으로 기울어지도록 한, 유기 박막 증착 장치의 증발원. The guide section so as to a lower height than the side of the furnace tilting the direction of the ejection port side formed by the guide portion to the center, the evaporation source of the organic thin film vapor deposition apparatus.
  4. 제 2 항에 있어서, 3. The method of claim 2,
    상기 가이드부는 그 높이를 상기 보조 가이드부의 높이보다 낮게하여 상기 가이드부와 상기 보조가이드부에 의해 형성되는 사이드 분사구의 방향이 중앙으로 기울어지도록 한, 유기 박막 증착 장치의 증발원. The guide portion is a direction of the height of the injection hole side and lower than the height of the auxiliary guide member which is formed by the guide portion and the side guide portion tilted to the center, the evaporation source of the organic thin film vapor deposition apparatus.
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