KR100720669B1 - Double side light triode structure spindt type field emission display and the manufacturing method thereof - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a spin type triode field emission device capable of emitting light on both sides, and a method of manufacturing the same. A metal tip is formed on both surfaces of the first substrate, that is, on both the top and bottom surfaces thereof, to enable both sides light emission. In performing the process of forming the sacrificial layer, a spin-type triode capable of emitting light on both sides to form the alumina structure and the sacrificial layer on both sides by using a predetermined manufacturing apparatus capable of providing the same conditions on both sides. A field emission device and a method of manufacturing the same.

A spin type triode field emission device capable of emitting both sides of the present invention includes a first substrate; A cathode electrode formed on an upper surface and a lower surface of the first substrate; An alumina structure in which micropores are formed on the cathode electrode; A metal electrode formed on the cathode electrode in the micropores; A metal tip formed on the metal electrode; A gate electrode formed on the alumina structure; An upper second substrate having a transparent electrode coated with a fluorescent material at a position corresponding to the metal tip on the upper side; The transparent second electrode on which the fluorescent material is coated is formed at a position corresponding to the metal tip of the lower surface side, between the lower second substrate and the upper second substrate and the upper surface side of the gate electrode, and the lower second substrate and the lower surface side. And a bonding member provided between the gate electrodes to fix the upper second substrate and the lower second substrate.

Field emission device, triode, anodization, electroplating, spin type, spindt, FED, double sided emission

Description

Double side light triode structure spindt type field emission display and the manufacturing method

1 is a cross-sectional view of a conventional spin type triode field emission device;

2 is a cross-sectional view of a spin type triode field emission device capable of emitting both sides of an embodiment according to the present invention;

3 is a schematic perspective view of a manufacturing apparatus used when manufacturing a spin type triode field emission device capable of emitting light on both sides according to the present invention;

4A to 4F are cross-sectional views of manufacturing processes of a spin type triode field emission device capable of emitting light on both sides according to an embodiment of the present invention;

FIG. 5 is a plan view illustrating the second substrate of the spin type triode field emission device capable of emitting light on both sides of one embodiment completed by the process of FIGS. 4A to 4F;

6 is a cross-sectional view of a spin type triode field emission device capable of emitting both sides of another embodiment according to the present invention;

FIG. 7 is a plan view illustrating the second substrate of the spin type triode field emission device capable of emitting light on both sides of another embodiment shown in FIG.

*** Explanation of symbols for the main parts of the drawing ***

1, 11, 31: first substrate 2, 12, 33: cathode electrode

3, 14, 35: alumina structure 3a, 14a, 35a: micropores

4, 16, 38: gate electrode 5, 15, 34: metal electrode

6, 18, 36: metal tip 7, 42: bonding member

8, 20, 39: second substrate 9, 21, 40: transparent electrode

10, 22, 41: fluorescent material 13: aluminum layer

17: sacrificial layer 32: oxide film

37: insulating film 110: lower plate

120: top plate

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a spin type tripolar field emission device capable of double-sided light emission, and a method for manufacturing the same. Particularly, a spin type 3 capable of double-sided light emission by forming a metal tip on both the upper and lower surfaces of the first substrate to enable double-sided light emission. The present invention relates to a cathode field emission device and a method of manufacturing the same.

A field emission display (FED) is used for a display device in which an electron gun is arranged for each pixel forming a screen, and a field emission emitter array which is a cold cathode electron source corresponding to the electron gun described above. An electron is emitted by applying a voltage to a field emitter array, and then the emitted electrons emit respective phosphors in the front to display an image. These FEDs are attracting attention as next-generation displays because they have the advantages of being thin while retaining the wide viewing angle, light operating temperature range, and high brightness characteristics of a cathode-ray tube (CRT).

1 is a cross-sectional view of a conventional spin type triode field emission device.

As shown in FIG. 1, a conventional spin type triode field emission device includes a lower plate 110 where electrons are emitted, an upper plate 120 and an upper plate 110 coated with a fluorescent material 10 that emits light when the electrons collide with each other. It consists of a bonding member (7) that serves as a support between the lower plate (120).

In the above-described configuration, the lower plate 110 is deposited on the first substrate 1, which is a silicon wafer, on the cathode electrode 2 and the cathode electrode 2 deposited on the first substrate 1, and at a predetermined interval. 3a) is formed and is deposited on the alumina structure (3) made of silica (SiO ₂ ), the alumina structure (3), the gate electrode (4) to facilitate the emission of electrons, the metal tip is an electron emission source ( 6) and a metal tip 6 comprising a metal electrode 5 to be deposited on the cathode electrode 2.

Meanwhile, the upper plate 120 includes a second substrate 8 made of glass, and an anode transparent electrode 9 which induces the electrons and is applied between the fluorescent material 10 and the second substrate 8.

Therefore, when a voltage is applied to the gate electrode 4 while the cathode electrode 2 of the lower plate 110 and the anode transparent electrode 9 of the upper plate 120 are activated, electrons are generated at the metal tip 6 of the lower plate 110. The emitted electrons collide with the fluorescent material 10 of the upper plate 120 so that the fluorescent material emits light.

However, according to the conventional spin type triode field emission device, since only single-sided light emission is possible, a device requiring double-sided light emission has to use two single-sided spin type triode field emission devices, resulting in a thicker device and a higher manufacturing cost.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-described problems, and the spin-type triode field emission device capable of double-sided light emission, which enables double-sided light emission by performing the same process on both the upper and lower surfaces of the first substrate under the same conditions, and its The purpose is to provide a manufacturing method.

Spin-type triode field emission device capable of emitting both sides of the present invention for achieving the above object and a method of manufacturing the first substrate; A cathode electrode formed on an upper surface and a lower surface of the first substrate; An alumina structure in which micropores are formed on the cathode electrode; A metal electrode formed on the cathode electrode in the micropores; A metal tip formed on the metal electrode; A gate electrode formed on the alumina structure; An upper second substrate having a transparent electrode coated with a fluorescent material at a position corresponding to the metal tip on the upper side; The transparent second electrode on which the fluorescent material is coated is formed at a position corresponding to the metal tip of the lower surface side, between the lower second substrate and the upper second substrate and the upper surface side of the gate electrode, and the lower second substrate and the lower surface side. Provided is a spin-type triode field emission device capable of double-sided light emission provided between the gate electrodes and including a bonding member for fixing the upper second substrate and the lower second substrate, and a method of manufacturing the same.

Hereinafter, with reference to the accompanying drawings will be described in detail with respect to the spin type triode field emission device capable of emitting light on both sides according to a preferred embodiment of the present invention.

2 is a cross-sectional view of a spin type triode field emission device capable of emitting both sides of an embodiment according to the present invention.

As shown in FIG. 2, a spin-type triode field emission device capable of emitting both sides of an embodiment according to the present invention includes a first substrate 11; A cathode electrode 12 formed on an upper surface and a lower surface of the first substrate 11; An alumina structure 14 having predetermined micropores 14a formed on the cathode electrode 12; A metal electrode 15 formed on the cathode electrode 12 in the predetermined microcavity 14a; A metal tip 18 formed on the metal electrode 15; A gate electrode 16 formed on the alumina structure 14; An upper second substrate 20 having a transparent electrode 21 coated with a fluorescent material 22 formed at a position corresponding to the metal tip 18 on the upper surface side; The lower second substrate 20 and the upper second substrate 20 and the upper surface of the transparent electrode 21 coated with the fluorescent material 22 are formed at positions corresponding to the metal tips 18 on the lower surface side. It is provided between the side of the gate electrode 16 and between the lower second substrate 20 and the lower side of the gate electrode 16 to fix the upper second substrate 20 and the lower second substrate 20. It comprises a bonding member 23 to be made.

Figure 3 is a schematic perspective view of a manufacturing apparatus used when manufacturing a spin-type triode field emission device capable of emitting light on both sides according to the present invention, an anodizing process for forming an alumina structure 14 and a metal tip 18 It is used in the electroplating process of forming the sacrificial layer 17 on the gate electrode 16 before formation.

As shown in FIG. 3, the apparatus for manufacturing a spin type triode field emission device capable of emitting both sides is achieved by a chamber 51 having a reaction chamber 52 having a predetermined size filled with a vacuum or an electrolytic solution. Inside the 52, a fixing frame 53 capable of fixing the first substrate 11 is installed.

Therefore, after fixing the first substrate 56 on which the predetermined deposit is deposited on the fixing frame 53, one platinum plate 55 is installed on each side of the first substrate 56 on which the predetermined deposit is deposited. When voltage and current are applied to the plate 55 and a predetermined deposit, anodization or electroplating may be simultaneously performed on both surfaces.

4A to 4F are cross-sectional views illustrating a manufacturing process of a spin-type triode field emission device capable of emitting light on both sides according to an embodiment of the present invention.

First, FIG. 4A illustrates a cathode electrode 12 such as gold (Au), platinum (Pt), silver (Ag), copper (Cu), palladium (Pd), or tantalum (Ti) on the upper and lower surfaces of the first substrate 11. ) Is a process of depositing the aluminum layer 13 on the cathode electrode (12) after the deposition, the simultaneous deposition on both sides using the CVD (Chemical Vapor Deposition) method, sputtering method This is accomplished by performing the process alternately face to face.

Next, FIG. 4B is a cross-sectional view of the aluminum layer 13 made of an alumina (Al ₂ O ₃ ) structure 14 having fine pores 14a by performing anodization and phosphoric acid treatment. The formation of the alumina structure 14 having the same sized micropores 14a on both sides is achieved by using 50, and the same conditions, i.e., the same voltage, the same time, the same vacuum state, and the same speed during the anodization process By rotating and providing the same temperature.

In the above-described configuration, the anodization process includes a constant voltage method and a constant current method, and the temperature and time must be varied according to the type and concentration of the electrolyte. In general, all electrolytes except sulfuric acid can be used at room temperature. In the case of carrying out the anodization by the constant voltage method, the time of the anodic oxidation should be adjusted while observing the change of the current in the case of the constant current method. If the anodic oxidation is performed at a fixed time, the phenomenon in which the alumina structure 14 is separated from the substrate occurs because the micropores 14a are not completely formed or passed. First, in the case of performing anodization by the constant voltage method, the current decreases rapidly initially and then gradually increases slightly, and then at a certain point, a sudden increase occurs, and then decreases again. Therefore, if the stop suddenly increases and falls at the moment, the lower end of the fine hole (14a) is formed to the cathode electrode (12). Next, in the case of performing anodization by the constant current method, the voltage initially increases rapidly and gradually decreases slightly, and at a certain point, the voltage decreases rapidly and then increases again. The lower end of the micropores 14a is formed up to the cathode electrode 12.

Therefore, the voltage applied to control the diameter of the micropores 14a or the distance between the micropores 14a is controlled, and the current is applied to control the thickness of the alumina structure 14.

Meanwhile, a barrier layer (not shown) is formed between the lower end of the micropores 14a and the cathode electrode 12 after the anodization process, and the height of the aluminum layer 13 varies depending on the location or the surface has a good flatness. If not, the distance between the lower end of the micropores 14a and the cathode electrode 12 is different for each position, thereby adding a phosphoric acid treatment process to obtain a uniformly arranged micropores 14a.

The phosphoric acid treatment process described above is carried out at 60 ° C by mixing a phosphoric acid of 0.2M or less in distilled water at a low concentration. Phosphate treatment time depends on the thickness of the barrier layer. The thickness of the barrier layer is generally 10 μs / V, and the thickness of the alumina structure 14 between the micropores 14a is 15 μs / V. do. When the barrier layer is etched, the alumina structure 14 between the micropores 14a is also etched at the same time, so that the alumina structure 14 of the micropores 14a must be stopped before etching the barrier layer. . Therefore, the barrier layer is preferably etched in a low concentration of acid, and when 0.2M phosphoric acid is used, an etching rate of 7 μs / sec is shown. If a high concentration of phosphoric acid is used instead of a low concentration of phosphoric acid, the etching rate is faster, so it is difficult to set the correct etching time.

 On the other hand, the deposited aluminum layer 13 should show the same height in all areas. Otherwise, in the anodization process, the distance between the lower end of the micropores 14a and the cathode electrode 12 may not be maintained at the same distance in all areas. As a result, the metal tip 18 and the cathode electrode (in some areas) may not be maintained. 12) is not connected to each other will occur. In addition, when the surface flatness and surface roughness of the deposited aluminum layer 13 are not good, it is difficult to obtain a constant and vertically formed micropores 14a by anodization.

Therefore, when the aluminum layer 13 uses a high purity, and the first substrate 11 is used as a silicon wafer, the cathode 12 may be formed of gold (Au), platinum (Pt), tantalum (Ta), If tungsten (W) is to be used, chromium (Cr) is formed between the first substrate 11 and the cathode electrode 12 and between the cathode electrode 12 and the aluminum layer 13 to increase the adhesion between the cathode electrode and the aluminum layer. ), Nickel (Ni), nichrome (NiCr), etc., are deposited very thinly, and deposited at about 200 nm with a thickness of about 200 nm, and cobalt (Co), copper (Cu), silver (Ag), etc., as the cathode electrode 12 If you want to use, it is preferable to deposit titanium (Ti) in the middle. This is because the aluminum layer 13 and the silicon wafer have similar bulk density, that is, apparent specific gravity.

Meanwhile, chromic acid, dilute sulfuric acid, BOE (Buffered Oxid Etch) or oxalic acid may be used instead of phosphoric acid in the phosphoric acid treatment process.

On the other hand, since the area of the cathode electrode 12 exposed by performing the phosphate treatment process may be slightly different for each fine hole 14a, when forming the metal tip 18 in the fine hole 14a The area of the cathode electrode 12 in contact with the metal tip 18 may vary for each hole 14a, which may act as a cause of the field emission characteristic of each emitter transparent electrode 21. Therefore, in order to make the area of the cathode electrode 12 exposed at the bottom of the micropores 14a the same, the metal electrode 18 is deposited at the bottom of the micropores 14a by using a deposition apparatus. The number of processes can be reduced by simultaneously depositing a gate electrode 16 that can be achieved on top of the alumina structure 14.

4C shows that the sacrificial layer 17 is deposited on the top of the gate electrode 16 after depositing an electrode, that is, a gate electrode 16 and a metal electrode 15, on the top of the alumina structure 14 and the bottom of the micropores 14a. The gate electrode 16 and the metal electrode 15 are formed by simultaneously depositing both surfaces using CVD or alternately by one surface by sputtering, and the sacrificial layer 17 This is accomplished by performing an electroplating process using the manufacturing apparatus shown in FIG.

The metal electrode 15 and the gate electrode 16 described above should be made of a metal having a similar apparent specific gravity to that of the alumina structure 14 and the cathode electrode 12 to improve adhesion, and the apparent specific gravity of the gate electrode 16 will be deposited later. It is good to make a big difference from the apparent specific gravity of the sacrificial layer. In particular, the gate electrode 16 is preferably deposited to at least 3000 GPa for use as an electrode of the electroplating process to be performed later.

The above-described electroplating process is achieved by using the manufacturing apparatus shown in Fig. 3, which is similar to the anodizing process by providing the same conditions, i.e., the same voltage, the same time, the same vacuum, the same speed of rotation and the same temperature. A sacrificial layer of the same thickness is formed in.

In particular, when the sacrificial layer 17 is etched afterwards, the alumina structure 14 or the gate electrode 16 should not be affected. Therefore, it is preferable to form a thin layer having a thickness of 10 nm or less. When representative Ni electroplating is carried out, H3 · BO3 (boric acid), NiSO4 · 6H2O (nickel sulfate) and NiCl2 · 6H2O (nickel chloride) are added in order to make an electrolytic plating solution, and the Ni plate +), The sacrificial layer 17 having a desired height can be made by controlling the amount of current per area by using the gate electrode 16 as a cathode (-).

Next, FIG. 4D is a cross-sectional view of forming the metal tip 18 using a sputter, and the metal tip 18 mainly uses molybdenum (Mo), and is deposited while rotating the first substrate 11. As shown in Fig. 2E, it is to be deposited in a spin type, that is, conical.

Since the metal tip 18 deposition process is difficult to perform both sides at the same time, it is accomplished by alternating one by one.

Next, FIG. 4E is a cross-sectional view of the sacrificial layer 17 removed after the metal tip 18 deposition process. The sacrificial layer 17 is removed by using a lift-off method, thereby eliminating the need for forming the metal tip 18. Molybdenum can be removed.

The above lift-off method is achieved by precipitating the sacrificial layer 17 in the Ni etching solution to remove the molybdenum deposited on both sides.

Next, FIG. 4F is a cross-sectional view of the second substrate 20 having the phosphor 22 and the transparent electrode 21 formed on both surfaces of the first substrate 11 completed by the process of FIGS. 4A to 4E. Adhesion is achieved by using an adhesive member 23 between the 20 and the gate electrode 16.

FIG. 5 is a plan view showing the second substrate of the spin-type triode field emission device capable of emitting light on both sides according to one embodiment completed by the processes of FIGS. 4A to 4F. The gate electrode 16 is formed for each micropores 14a. Is present, and the metal electrode 15 is formed in the micropores 14a. In particular, since both surfaces of the first substrate 11 are performed in the same process, the bottom view is the same as the plan view.

6 is a cross-sectional view of a spin type triode field emission device capable of double-sided light emission according to another embodiment of the present invention, showing a PM type spin type triode field emission device.

The PM (Passive Matrix) is a cathode electrode 33 of the first substrate 31 and the anode transparent electrode 40 of the upper plate is formed in a mesh-like matrix structure by applying different voltages to control the pixels where they cross each other. It is a driving method. Another driving method is an active matrix (AM). The AM method is a driving method in which a thin film transistor is provided for each pixel to individually control each pixel. Compared with the overall performance, the AM driving method is superior to the PM driving method in terms of brightness, resolution, and responsiveness, but it is difficult to manufacture and expensive.

In another embodiment of the present invention, a spin type triode field emission device having a PM structure includes: a first substrate 31; A cathode electrode 33 and an oxide film 32 deposited on upper and lower surfaces of the first substrate 31; An alumina structure 35 having fine holes 35a deposited on the cathode electrode 33 and the oxide film 32; A gate electrode 38 and an insulating film 37 deposited on the alumina structure 35; A metal electrode 34 formed on the cathode electrode 33 in the micropores 35a; A metal tip 36 formed on the metal electrode 34; An upper second substrate 39 having a transparent electrode 40 coated with a fluorescent material 41 formed at a position corresponding to the metal tip 36 on the upper surface side; The lower second substrate 39 and the upper second substrate 39 and the upper surface of the transparent electrode 40 coated with the fluorescent material 41 are formed at positions corresponding to the metal tips 36 on the lower surface side. It is provided between the side of the gate electrode 38 and between the lower second substrate 39 and the lower side of the gate electrode 38 to fix the upper second substrate 39 and the lower second substrate 39. It comprises a bonding member 42 to be made.

The above-described manufacturing process of the SPT type triode field emission device of the PM structure is achieved by adding several steps to the manufacturing process of the SPT type triode field emission device. First, photolithography above and below the first substrate 31 is performed. After the oxide film 32 and the cathode electrode 33 are formed by using a method, an aluminum layer (not shown) is deposited to form an alumina structure 35 having fine pores 35a by the anodization method above and below.

Next, when the sacrificial layer (not shown) is deposited on the alumina structure 35, the sacrificial layer (not shown) is also deposited inside the micropores 35a and the micropores 35a are closed. After that, a photoresist (PR) (not shown) is applied on the sacrificial layer, and if only the sacrificial layer (not shown) of the portion where the electron-emitting device is to be made is selectively removed by using a semiconductor process, fine pores 35a may be removed. The sacrificial layer (not shown) that has been deposited on the substrate is also removed. At this time, the direction of the sacrificial layer (not shown) to be removed should be a direction crossing the cathode electrode 33 at a right angle.

Thereafter, the gate electrode 38 is deposited on the exposed micropores 35a by using a deposition apparatus, and Ni (not shown) is deposited on the gate electrode 38 by using an electroplating method, followed by electron emission using a deposition apparatus. Cause Mo is deposited to form a metal tip 36. When the PR (not shown) is removed, Mo on the PR (not shown) is removed by the lift-off method, and when Ni is removed again, the triode electric field capable of emitting both sides of the PM structure shown in FIG. Emitting device can be manufactured.

As described above, the fabrication of a double-sided light emitting triode field emission device having a PM (Passive Matrix) structure capable of driving a low voltage requires a lot of difficulties in fabricating a conventional semiconductor process. However, since the sacrificial layer by the electroplating method and the deposition method is used, it will be relatively easy to manufacture in comparison with other manufacturing methods in the step or method of the process.

FIG. 7 is a plan view illustrating the second substrate of the spin type triode field emission device capable of emitting light on both sides of another embodiment shown in FIG. 6, wherein a gate electrode 38 exists in each of the micropores 45. A metal tip 36 is formed in the hole 35a, and the micro holes 35a without the metal tip 36 are covered with the insulating layer 37. In particular, since both surfaces of the first substrate 31 are performed in the same process, the bottom view is the same as the plan view.

The spin-type triode field emission device capable of emitting both sides of the present invention and its manufacturing method are not limited to the above-described embodiments and can be modified in various ways within the scope of the technical idea of the present invention.

According to the spin-type triode field emission device capable of double-sided light emission and the manufacturing method thereof according to the present invention as described above, rather than using two spin-type triode field emission devices capable of single-side light emission in a device requiring double-sided light emission. The thickness is reduced and the cost is reduced.

Claims (12)

A first substrate; A cathode electrode formed on an upper surface and a lower surface of the first substrate; An alumina structure in which micropores are formed on the cathode electrode; A metal electrode formed on the cathode electrode in the micropores; A metal tip formed on the metal electrode; A gate electrode formed on the alumina structure; An upper second substrate on which a transparent electrode coated with a fluorescent material is formed at a position corresponding to the upper surface side of the metal tip; A lower second substrate on which the transparent electrode coated with the fluorescent material is formed at a position corresponding to the metal tip on the lower surface; And a bonding member provided between the upper second substrate and the upper surface side gate electrode and between the lower second substrate and the lower surface side gate electrode to fix the upper second substrate and the lower second substrate. Spind-type triode field emission device capable of emitting light on both sides. The method of claim 1, And the first substrate is one of silicon, silicon carbide, gallium arsenide, glass, sapphire or quartz. delete (a) forming a cathode on the top and bottom surfaces of the first substrate; (b) forming an aluminum layer on the cathode; (c) forming the aluminum layer into an alumina structure including micropores; (d) forming a gate electrode on an entire top of the alumina structure; (e) forming a sacrificial layer on the gate electrode; (f) sputtering a metal in the micropores and on top of the sacrificial layer; and (g) A method for manufacturing a spin-type triode field emission device capable of double-sided light emission comprising the step of removing the sacrificial layer. The method of claim 4, wherein The step (c) is a method of manufacturing a spin-type triode field emission device capable of double-sided light emission, characterized in that for performing anodization process and phosphoric acid treatment process to determine the height and flatness of the alumina structure and the size of the micropores. The method of claim 5, Step (d) is a spin-type triode field emission device capable of double-sided light emission, characterized in that the metal electrode of the same material is deposited on the top of the cathode electrode at the same time as the gate electrode deposition on the alumina structure Manufacturing method. A first substrate; A cathode electrode formed on a top surface and a bottom surface of the first substrate in a predetermined pattern; An oxide film formed on an upper surface and a lower surface of the first substrate except for where the cathode electrode is formed; An alumina structure formed on the cathode electrode and the oxide film, the micropores being formed on the cathode electrode; A metal electrode formed on the cathode electrode in the micropores; A metal tip formed on the metal electrode; A gate electrode formed on the alumina structure and formed at a position corresponding to the cathode electrode; An insulating film formed on the alumina structure, the insulating film being formed other than where the gate electrode is formed; An upper second substrate on which a transparent electrode coated with a fluorescent material is formed at a position corresponding to the upper surface side of the metal tip; A lower second substrate on which the transparent electrode coated with the fluorescent material is formed at a position corresponding to the metal tip on the lower surface; And a bonding member provided between the upper second substrate and the upper side insulating film and between the lower second substrate and the lower side insulating film to fix the upper second substrate and the lower second substrate. A spin type triode field emission device that can be used. The method of claim 7, wherein And the first substrate is one of silicon, silicon carbide, gallium arsenide, glass, sapphire or quartz. delete (a) applying an oxide film to the upper and lower surfaces of the first substrate; (b) applying a photoresist on the oxide film to etch the oxide film and the photoresist; (c) removing the photoresist after depositing a cathode; (d) forming an aluminum layer on the oxide film and the cathode electrode; (e) forming the aluminum layer into an alumina structure such that micropores are formed on the cathode electrode; (f) selectively depositing an insulator and a photoresist on the alumina structure and then selectively etching the photoresist and the insulator; (g) forming a gate electrode on an entire top of the alumina structure; (h) forming a sacrificial layer on the gate electrode; (i) sputtering a metal in the micropores and on top of the sacrificial layer; (j) removing the sacrificial layer and (k) A method for manufacturing a spin-type triode field emission device capable of double-sided light emission, comprising removing the photoresist applied on the insulating film. The method of claim 10, The step (d) is a method for manufacturing a spin-type triode field emission device capable of double-sided light emission, characterized in that for performing the anodization process and the phosphate treatment process to determine the height and flatness of the alumina structure and the size of the micropores. The method of claim 11, The step (g) is a spin-type triode field emission device capable of double-sided light emission, characterized in that a metal electrode of the same material is deposited on the top of the cathode electrode at the same time as the gate electrode deposition on the alumina structure. Manufacturing method.

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