KR100717844B1 - IC switch carrier packaged with CWBI and method thereof - Google Patents

Abstract

The present invention utilizes Coplanar Wire-bond Interconnect (CWBI) to minimize the effects of the radiation caused by the transition of integrated circuit switch and integrated circuit switch carrier device lines. An integrated circuit switch carrier device packaged using a coplanar wire-bond interconnect having a isolation characteristic having the same characteristics as a package before packaging, and a method thereof. Circuit switch; A line of the integrated circuit switch carrier device; A first signal pad positioned at an input / output terminal of the integrated circuit switch to connect a signal; A first ground pad positioned at an input / output terminal of the integrated circuit switch to ground the integrated circuit switch; A second signal pad positioned at an input / output terminal of the integrated circuit switch carrier device to connect a signal; Second ground pads positioned at both ends of the second signal pad at input / output terminals of the integrated circuit switch carrier device and configured to ground the integrated circuit switch carrier device; Grounding means for grounding the second ground pad; A first bond wire for connecting the first signal pad and the second signal pad; And a second bond wire for connecting the first ground pad and the second ground pad, wherein the width of the second signal pad and the distance between the second ground pad and the second ground pad are determined to be characteristic impedances. It is characterized by.

Integrated Circuit Switch Packaging, Grounded Coplanar Waveguide (GCPW), Coplanar Waveguide (CPW), Coplana Wire-bond Interconnect (CWBI)

Description

Integrated circuit switch carrier device packaged using coplanar wire-bond interconnect and method thereof IC chip carrier packaged with CWBI and method

1 is an exemplary view of a monolithic microwave integrated circuit (MMIC) switch carrier device in the case of using a conventional microstrip line;

2A is a schematic diagram of an embodiment of a monolithic microwave integrated circuit (MMIC) switch carrier device according to the present invention;

FIG. 2B is a detailed block diagram of an embodiment of the monolithic microwave integrated circuit (MMIC) switch of FIG. 2A;

3 is a diagram illustrating isolation characteristics of a monolithic microwave integrated circuit (MMIC) switch assembled in the structure of FIGS. 1 and 2, and a curve of a result of on-wafer test of a monolithic microwave integrated circuit (MMIC) switch;

4 is a flow diagram of an embodiment of a packaging method of a monolithic microwave integrated circuit (MMIC) switch using a coplanar wire-bond interconnect according to the present invention and a test method to obtain high isolation characteristics accordingly.

* Explanation of symbols for the main parts of the drawings

101: microstrip 50 ohm line

102: Signal pad on microstrip 50 ohm line

103: Tuning Pad of Microstrip 50 Ohm Line

201: MMIC switch carrier device

202: Bolt for fixing to the test jig

203: GCPW or CPW 50 Ohm Line

204: Second ground pad of GCPW or CPW 50 Ohm line

205: Board via hole for ground pad of GCPW or CPW 50 Ohm line

206: second signal pad on a GCPW or CPW 50 Ohm line

207: MMIC switch 208: bond-wire 209: MMIC switch input and output first ground pad

210: MMIC switch input and output first signal pad

The present invention relates to an integrated circuit (IC) switch carrier device packaged using coplanar wire-bond interconnect technology, and more particularly to an integrated circuit switch carrier device when packaging an integrated circuit switch. (Grounded Coplanar Waveguide) or CPW (Coplanar Waveguide) lines are used, and in addition to the RF (Radio Frequency) signal pad at the input and output of the integrated circuit switch, the ground pad is placed on both sides of the RF signal pad. Coplanar Wire-bond Interconnection (CWBI) that connects bond-wires between signal pads on switch carrier device lines and bonds wires between integrated circuit switches and ground pads on integrated circuit switch carrier device lines Packaged using coplanar wire-bond interconnects to achieve high isolation characteristics An integrated circuit (IC) switch carrier device and method thereof are provided.

In the following embodiment, a monolithic microwave integrated circuit (MMIC) will be described as the integrated circuit (IC), and a GCPW or CPW 50-ohm line will be described as an integrated circuit switch carrier device. However, it should be noted that the invention is not limited to monolithic microwave integrated circuits (MMICs) or GCPW or CPW 50 ohm lines.

The monolithic microwave integrated circuit (MMIC) is hereinafter referred to as "MMIC".

1 is an exemplary view of a monolithic microwave integrated circuit (MMIC) switch carrier device in the case of using a conventional microstrip line.

As shown in FIG. 1, the method using the microstrip 50-ohm line 101 is a typical radio frequency (RF) signal connection method in a packaging situation of an MMIC switch. The width of the RF signal pad 102 of the microstrip 50 ohm line should be chosen so that the characteristic impedance is 50 ohms, and the tuning of the microstrip 50 ohm line for tuning on both sides of the RF signal pad 102 of the microstrip 50 ohm line. The pad 103 is arranged. In addition, the bond wire is responsible for the connection between the microstrip 50 ohm line 101 and the input / output signal pad 210 of the MMIC switch.

That is, when packaging the MMIC switch 207, the method using the microstrip 50 ohm line 101 connects only the microstrip 50 ohm line 101 and the input / output signal pad 210 of the MMIC switch to the bond-wire. Since the transition structure between the input / output pad 210 and the microstrip 50 line 101 of the MMIC switch is greatly influenced by the radiation, the isolation characteristic is inferior. In addition, when packaging the MMIC switch 207, the electric-field distribution of the microstrip 50 ohm line 101 is formed closer to the signal pad than the GCPW 50 ohm line, so that it receives more radiation and is isolated. There is also a problem of falling characteristics.

In general, the switch is located at the front end of the transmission and reception system to separate the transmission and reception of RF signals, or to connect or transfer the RF path inside the microwave switch matrix component. In particular, in radar systems, it is one of the most important components, along with high power amplifiers and low noise receivers.

One of the most important performance parameters of these switches is isolation. Conventional methods for improving isolation can improve isolation using CPW ground isolation in MMIC switch circuit implementations. In addition, there is a mechanical approach to realize optimal channel height and width in the switch module.

However, in the conventional MMIC switch circuit implementation, the method of using CPW ground isolation is not a final solution because the MMIC switch ultimately needs to be packaged and used. In addition, the mechanical approach to realize the optimal channel height and width of the switch module in packaging has the disadvantage that the switch isolation characteristics can not be maintained.

The present invention has been proposed to solve the above shortcomings. The present invention relates to a radiation that occurs during transition of an integrated circuit switch and an integrated circuit switch carrier device line using Coplanar Wire-bond Interconnection (CWBI). Provided are an integrated circuit switch carrier device packaged using coplanar wire-bond interconnects and a method thereof in which integrated circuit switch isolation characteristics are minimized so that they have the same characteristics as those before packaging even in a packaging situation. The purpose is.

Other objects and advantages of the present invention can be understood by the following description, and will be more clearly understood by the embodiments of the present invention. Also, it will be readily appreciated that the objects and advantages of the present invention may be realized by the means and combinations thereof indicated in the claims.

An apparatus of the present invention for achieving the above object is an integrated circuit switch carrier device, comprising: an integrated circuit switch; A line of the integrated circuit switch carrier device; A first signal pad positioned at an input / output terminal of the integrated circuit switch to connect a signal; A first ground pad positioned at an input / output terminal of the integrated circuit switch to ground the integrated circuit switch; A second signal pad positioned at an input / output terminal of the integrated circuit switch carrier device to connect a signal; Second ground pads positioned at both ends of the second signal pad at input / output terminals of the integrated circuit switch carrier device and configured to ground the integrated circuit switch carrier device; Grounding means for grounding the second ground pad; A first bond wire for connecting the first signal pad and the second signal pad; And a second bond wire for connecting the first ground pad and the second ground pad, wherein the width of the second signal pad and the distance between the second ground pad and the second ground pad are determined to be characteristic impedances. It is characterized by.

On the other hand, the method of the present invention is a method of packaging an integrated circuit (IC) switch using a coplanar wire-bond interconnect, wherein the integrated circuit switch carrier device is provided at both ends of a second signal pad of the integrated circuit switch carrier device. Determining a width of the second signal pad and a distance from the second ground pad to a characteristic impedance; Grounding by connecting the second ground pad to ground; And interconnecting the first signal pad and the second signal pad of the integrated circuit switch using a Coplanar Wire-bond Interconnection (CWBI), the first ground pad of the integrated circuit switch and the And connecting the second ground pads to each other.

2A is a schematic diagram of an embodiment of a monolithic microwave integrated circuit (MMIC) switch carrier device according to the present invention.

As shown in FIG. 2A, the MMIC switch carrier device 201 has a MMIC switch 207 at the center and a GCPW 50 ohm line 203 at the input and output portions of the MMIC switch carrier device 201. On the other hand, there are two bolt holes 202 for mounting the MMIC switch carrier device 201 to the test jig.

FIG. 2B is a detailed block diagram of an embodiment of the monolithic microwave integrated circuit (MMIC) switch of FIG. 2A.

As shown in FIG. 2B, the GCPW 50 Ohm line 203 is formed on an alumina substrate, and the second ground pad 204 of the GCPW or CPW 50 Ohm line is the second signal pad (GCPW or CPW 50 Ohm line). 206) at both ends. The width of the second signal pad 206 on the GCPW or CPW 50 ohm line and the spacing to the second ground pad 204 on the GCPW or CPW 50 ohm line were chosen so that the characteristic impedance was 50 ohms. In order to ground the second ground pad 204 of the GCPW 50 ohm line, the ground via substrate via hole 205 for the ground pad of the GCPW 50 ohm line was connected to the bottom of the substrate. The input / output of the MMIC switch is performed through the MMIC switch input / output first ground pad 209 grounded to both the MMIC switch input / output first signal pad 210 and the MMIC switch input / output first signal pad 210 through an MMIC via hole. As shown in FIG. 2B, in the input / output of the MMIC switch, a bond-wire of gold component is connected between the first and second signal pads 210 and 206 of the GCPW or CPW 50-ohm line. 208 is connected, and a gold bond-wire 208 is also connected between the second ground pad 204 of the GCPW 50 ohm line and the first ground pad 209 of the MMIC switch. This is the Coplanar Wire-bond Interconnection (CWBI).

FIG. 3 is a diagram illustrating isolation characteristics of a monolithic microwave integrated circuit (MMIC) switch assembled in the structure of FIGS. 1 and 2, and a curve of the on-wafer test result of the monolithic microwave integrated circuit (MMIC) switch.

3 is measured under the conditions of a microstrip 50 Ohm line 101, a GCPW 50 Ohm line 203, and a GCPW 50 Ohm line 203 using Coplanar Wire-bond Interconnection (CWBI). The isolation characteristics of the MMIC switch are shown. In addition, on-wafer measurement results are also included for comparison with pure MMIC switch performance. When the microstrip 50 ohm line 101 is used, the isolation characteristic is less than 50 dB in the frequency range of 2.5 GHz to 4.0 GHz. Isolation characteristics are improved by 5.8 dB (48.6-> 54.4 dB) when using the GCPW 50 ohm line (203) at 3.4 GHz over the microstrip 50 ohm line (101), and coplanar wire-bond interconnect Using the GCPW 50 Ohm line 203 using (CWBI, Coplanar Wire-bond Interconnection) improved 6.9 dB (54.4-> 61.3 dB) at 3.4 GHz compared to using the GCPW 50 Ohm line 203. This is because the electric-field distribution of the GCPW 50-ohm line 203 is formed near the signal pads as compared to the microstrip 50-ohm line 101 and thus receives less radiation. In addition, Coplanar Wire-bond Interconnect (CWBI) minimizes radiation in the transition structure between the input / output first signal pad 210 and the GCPW 50-ohm line 203 of the MMIC switch. to be.

4 is a flow diagram of an embodiment of a packaging method of a monolithic microwave integrated circuit (MMIC) switch using a coplanar wire-bond interconnect according to the present invention and a test method to obtain high isolation characteristics accordingly.

First, a GCPW or CPW line is used as the 50 ohm line 203 in the MMIC switch carrier device 201, and GCPW or CPW is connected to both ends of the GCPW or CPW 50 ohm second signal pad 206 of the MMIC switch carrier device input and output. Positioning a second ground pad 204 (401), the width of the GCPW or CPW 50 ohm second signal pad 206 of the MMIC switch carrier device and the distance distance to the GCPW or CPW 50 ohm second ground pad is characterized Determine the impedance to be 50 ohms (402).

Subsequently, in operation 403, the MMIC switch carrier device is connected to the bottom ground of the substrate through the substrate via hole 205 to ground the GCPW or CPW 50 ohm second ground pad 204.

Subsequently, an interconnection between the input / output first signal pad 210 of the MMIC switch and the GCPW or CPW 50 ohm second signal pad 206 of the MMIC switch carrier device is connected using gold-bonded wires (404). The interconnection of the MMIC switch input / output first ground pad 209 and the GCPW or CPW 50 ohm second ground pad 204 of the MMIC switch carrier device is connected using gold-bonded wires (405).

The MMIC switch 207 is centered on the MMIC switch carrier device 201 and the GCPW or CPW 50 ohm line 203 of the MMIC switch carrier device is located at the input / output portion of the MMIC switch (406). Performance test jig in single-pole single-throw (SPST) switch carrier device assembly for microwave switch matrix for satellite communication. Assemble the MMIC switch carrier device in the jig and test under the same conditions as performance characteristics in carrier device assembly. In operation 407, as a result of the testing process, high isolation characteristics may be obtained in a packaging situation of the MMIC switch 207.

The present invention described above is capable of various substitutions, modifications, and changes without departing from the technical spirit of the present invention for those skilled in the art to which the present invention pertains. It is not limited by.

As described above, the present invention connects an input / output terminal of an integrated circuit switch using a coplanar wire-bond interconnection (CWBI) in an integrated circuit (IC) switch packaging situation using a GCPW or CPW line. As a result, the high isolation characteristic of the integrated circuit switch can be obtained.

Claims (8)

An integrated circuit switch carrier device, Integrated circuit switch; A line of the integrated circuit switch carrier device; A first signal pad positioned at an input / output terminal of the integrated circuit switch to connect a signal; A first ground pad positioned at an input / output terminal of the integrated circuit switch to ground the integrated circuit switch; A second signal pad positioned at an input / output terminal of the integrated circuit switch carrier device to connect a signal; Second ground pads positioned at both ends of the second signal pad at input / output terminals of the integrated circuit switch carrier device and configured to ground the integrated circuit switch carrier device; Grounding means for grounding the second ground pad; A first bond wire for connecting the first signal pad and the second signal pad; And A second bond-wire for connecting the first ground pad and the second ground pad, And a width of the second signal pad and a distance interval to the second ground pad are determined to be characteristic impedances. The method of claim 1, The track, Integrated circuit (MMIC) switch carrier device using a Coplana wire-bond interconnect technology characterized by a CPW 50 Ohm line. The method of claim 1, The track, Integrated circuit (MMIC) switch carrier device using Coplana wire-bond interconnect technology characterized by a GCPW 50 Ohm line. delete The method of claim 1, The grounding means, An integrated circuit (MMIC) switch carrier device using a coplanar wire-bond interconnect technology, wherein the second ground pad is a substrate via hole for connecting the ground pad to a ground of the substrate. A method of packaging an integrated circuit (IC) switch using a coplanar wire-bond interconnect, Disposing a second ground pad of the integrated circuit switch carrier device at both ends of the second signal pad of the integrated circuit switch carrier device; Determining a width of the second signal pad and a distance interval to the second ground pad to be a characteristic impedance; Grounding by connecting the second ground pad to ground; And Coplanar Wire-bond Interconnect (CWBI) is used to interconnect the first and second signal pads of the integrated circuit switch, and the first ground pad and the first signal pad of the integrated circuit switch. 2 Connection Steps for Interconnecting Grounding Pads An integrated circuit (IC) switch packaging method using a coplanar wire-bond interconnect comprising a. The method of claim 6, The connecting step, Connecting the first signal pad and the second signal pad using bond-wires; And Connecting the first ground pad and the second ground pad using bond-wires; Method of packaging an integrated circuit switch using a coplanar wire-bond interconnect comprising a. The method according to claim 6 or 7, The determining step, Determining a width of the second signal pad and a distance interval to the second ground pad such that a characteristic impedance of 50 ohms is 50 ohms.

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