KR100597629B1 - 강유전체 메모리 장치 및 그에 따른 구동방법 - Google Patents

강유전체 메모리 장치 및 그에 따른 구동방법 Download PDF

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Publication number
KR100597629B1
KR100597629B1 KR1020030094383A KR20030094383A KR100597629B1 KR 100597629 B1 KR100597629 B1 KR 100597629B1 KR 1020030094383 A KR1020030094383 A KR 1020030094383A KR 20030094383 A KR20030094383 A KR 20030094383A KR 100597629 B1 KR100597629 B1 KR 100597629B1
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KR
South Korea
Prior art keywords
memory cell
access transistor
voltage
ferroelectric
word line
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KR1020030094383A
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English (en)
Korean (ko)
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KR20050062716A (ko
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전병길
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삼성전자주식회사
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Priority to KR1020030094383A priority Critical patent/KR100597629B1/ko
Priority to JP2004186459A priority patent/JP2005182978A/ja
Priority to US11/015,428 priority patent/US7426130B2/en
Priority to CN2004100820257A priority patent/CN1637929B/zh
Publication of KR20050062716A publication Critical patent/KR20050062716A/ko
Application granted granted Critical
Publication of KR100597629B1 publication Critical patent/KR100597629B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
KR1020030094383A 2003-12-22 2003-12-22 강유전체 메모리 장치 및 그에 따른 구동방법 KR100597629B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020030094383A KR100597629B1 (ko) 2003-12-22 2003-12-22 강유전체 메모리 장치 및 그에 따른 구동방법
JP2004186459A JP2005182978A (ja) 2003-12-22 2004-06-24 強誘電体メモリ装置及びその駆動方法
US11/015,428 US7426130B2 (en) 2003-12-22 2004-12-16 Ferroelectric RAM device and driving method
CN2004100820257A CN1637929B (zh) 2003-12-22 2004-12-22 铁电体随机存取存储器器件和驱动方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020030094383A KR100597629B1 (ko) 2003-12-22 2003-12-22 강유전체 메모리 장치 및 그에 따른 구동방법

Publications (2)

Publication Number Publication Date
KR20050062716A KR20050062716A (ko) 2005-06-27
KR100597629B1 true KR100597629B1 (ko) 2006-07-07

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KR1020030094383A KR100597629B1 (ko) 2003-12-22 2003-12-22 강유전체 메모리 장치 및 그에 따른 구동방법

Country Status (4)

Country Link
US (1) US7426130B2 (zh)
JP (1) JP2005182978A (zh)
KR (1) KR100597629B1 (zh)
CN (1) CN1637929B (zh)

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CN100390901C (zh) * 2006-04-21 2008-05-28 北京大学深圳研究生院 铁电动态随机存储器单管单元阵列的编程方法
US7667997B2 (en) * 2007-12-27 2010-02-23 Texas Instruments Incorporated Method to improve ferroelectronic memory performance and reliability
KR20090090597A (ko) * 2008-02-21 2009-08-26 삼성전자주식회사 강유전체 메모리 소자 및 그 제조 방법
JP5185098B2 (ja) * 2008-12-22 2013-04-17 株式会社東芝 強誘電体メモリ
US8724367B2 (en) * 2010-12-30 2014-05-13 Texas Instruments Incorporated Method and apparatus pertaining to a ferroelectric random access memory
US8717800B2 (en) * 2010-12-30 2014-05-06 Texas Instruments Incorporated Method and apparatus pertaining to a ferroelectric random access memory
US9767879B2 (en) * 2015-02-17 2017-09-19 Texas Instruments Incorporated Setting of reference voltage for data sensing in ferroelectric memories
US10373665B2 (en) 2016-03-10 2019-08-06 Micron Technology, Inc. Parallel access techniques within memory sections through section independence
US10636471B2 (en) * 2016-04-20 2020-04-28 Micron Technology, Inc. Memory arrays, ferroelectric transistors, and methods of reading and writing relative to memory cells of memory arrays
KR102506791B1 (ko) * 2016-09-05 2023-03-08 에스케이하이닉스 주식회사 파워 분배 네트워크 개선을 위한 반도체 장치
US10504909B2 (en) * 2017-05-10 2019-12-10 Micron Technology, Inc. Plate node configurations and operations for a memory array
US10074422B1 (en) * 2017-06-13 2018-09-11 Cypress Semiconductor Corporation 2T1C ferro-electric random access memory cell
CN109087674A (zh) * 2017-06-14 2018-12-25 萨摩亚商费洛储存科技股份有限公司 铁电内存及其数据读取、写入与制造方法和电容结构
CN107946461B (zh) * 2017-11-17 2021-10-19 南方科技大学 一种铁电阻变存储器及其写入方法、读取方法和制备方法
US10529410B2 (en) 2017-12-18 2020-01-07 Micron Technology, Inc. Techniques for accessing an array of memory cells to reduce parasitic coupling
US10818334B2 (en) * 2018-06-26 2020-10-27 AUCMOS Technologies USA, Inc. Ferroelectric memory array with variable plate-line architecture
US11232838B2 (en) * 2020-01-24 2022-01-25 Taiwan Semiconductor Manufacturing Company, Ltd. Ferroelectric FET-based content addressable memory
US11309034B2 (en) * 2020-07-15 2022-04-19 Ferroelectric Memory Gmbh Memory cell arrangement and methods thereof
US11688457B2 (en) * 2020-12-26 2023-06-27 International Business Machines Corporation Using ferroelectric field-effect transistors (FeFETs) as capacitive processing units for in-memory computing
US11527277B1 (en) 2021-06-04 2022-12-13 Kepler Computing Inc. High-density low voltage ferroelectric memory bit-cell
US11705185B2 (en) * 2021-06-29 2023-07-18 Micron Technology, Inc. Apparatus for differential memory cells
US11735249B2 (en) * 2021-06-29 2023-08-22 Micron Technology, Inc. Sensing techniques for differential memory cells
US11482270B1 (en) 2021-11-17 2022-10-25 Kepler Computing Inc. Pulsing scheme for a ferroelectric memory bit-cell to minimize read or write disturb effect and refresh logic
US11903219B1 (en) 2022-03-07 2024-02-13 Kepler Computing Inc. Multi-element ferroelectric gain memory bit-cell having stacked and folded planar capacitors
US11749329B1 (en) * 2022-05-20 2023-09-05 Micron Technology, Inc. Off-state word line voltage control for fixed plate voltage operation
US11741428B1 (en) 2022-12-23 2023-08-29 Kepler Computing Inc. Iterative monetization of process development of non-linear polar material and devices

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KR19980047083A (ko) * 1996-12-13 1998-09-15 김광호 불휘발성 강유전체 메모리장치 및 그의 구동방법
KR20010026311A (ko) * 1999-09-04 2001-04-06 한신혁 강유전체 메모리
US6301145B1 (en) * 1999-06-04 2001-10-09 Sony Corporation Ferroelectric memory and method for accessing same

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KR100363104B1 (ko) * 1998-10-28 2003-02-19 주식회사 하이닉스반도체 강유전체 기억소자의 셀 구조
JP2000187990A (ja) 1998-12-24 2000-07-04 Nec Corp センスアンプ回路及びそれを用いた記憶装置並びにそれに用いる読出し方法
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KR100339413B1 (ko) * 1999-08-16 2002-05-31 박종섭 불휘발성 강유전체 메모리 소자의 구동회로
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KR100434317B1 (ko) * 2001-06-30 2004-06-04 주식회사 하이닉스반도체 강유전체 메모리 및 그의 구동 방법
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US6301145B1 (en) * 1999-06-04 2001-10-09 Sony Corporation Ferroelectric memory and method for accessing same
KR20010026311A (ko) * 1999-09-04 2001-04-06 한신혁 강유전체 메모리

Also Published As

Publication number Publication date
US7426130B2 (en) 2008-09-16
CN1637929B (zh) 2011-03-16
CN1637929A (zh) 2005-07-13
KR20050062716A (ko) 2005-06-27
US20050135143A1 (en) 2005-06-23
JP2005182978A (ja) 2005-07-07

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