KR100587126B1 - Light permeable fluorescent cover for light emitting diode - Google Patents

Light permeable fluorescent cover for light emitting diode Download PDF

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Publication number
KR100587126B1
KR100587126B1 KR20010081578A KR20010081578A KR100587126B1 KR 100587126 B1 KR100587126 B1 KR 100587126B1 KR 20010081578 A KR20010081578 A KR 20010081578A KR 20010081578 A KR20010081578 A KR 20010081578A KR 100587126 B1 KR100587126 B1 KR 100587126B1
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South Korea
Prior art keywords
light
light emitting
emitting diode
resin
fluorescent cover
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KR20010081578A
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Korean (ko)
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KR20020051845A (en
Inventor
가와에히로유키
사노다케시
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산켄덴키 가부시키가이샤
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Priority to JP2000391457A priority Critical patent/JP2002190622A/en
Priority to JPJP-P-2000-00391457 priority
Application filed by 산켄덴키 가부시키가이샤 filed Critical 산켄덴키 가부시키가이샤
Publication of KR20020051845A publication Critical patent/KR20020051845A/en
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Publication of KR100587126B1 publication Critical patent/KR100587126B1/en

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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/501Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502Wavelength conversion materials
    • H01L33/504Elements with two or more wavelength conversion materials
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7766Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
    • C09K11/7774Aluminates; Silicates
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7783Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals one of which being europium
    • C09K11/7792Aluminates; Silicates
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/505Wavelength conversion elements characterised by the shape, e.g. plate or foil

Abstract

Provided is a phosphor for a light emitting diode that, when excited with light of a specific wavelength, generates light of a different wavelength in the same composition.
Provided is a phosphor for a light emitting diode comprising a lanthanoid-aluminate-based phosphor revived with manganese and having a green light emitting region and a red light emitting region with respect to the change in the content of manganese. Lanternoid aluminate-based phosphors in which manganese is added in different contents are phosphors of the same component and generate green light emission and red light emission.

Description

Light-emitting fluorescent cover for light emitting diodes {LIGHT PERMEABLE FLUORESCENT COVER FOR LIGHT EMITTING DIODE}

1 is a graph showing an emission spectrum of a light emitting device using a translucent fluorescent cover according to the present invention;

2 is a graph showing excitation spectra of La aluminate: Mn-based phosphors;

3 is a graph showing emission spectra of La aluminate: Mn-based phosphors;

4 is a graph showing the relationship between the amount of Mn added and the emission color of Mn-activated La aluminate-based phosphors;

5 is a graph showing the principle of color mixing of a light emitting device using a translucent fluorescent cover according to the present invention;

6 is a graph showing a light emission chromaticity range of a light emitting device using a translucent fluorescent cover according to the present invention;

7 is a cross-sectional view showing a second embodiment of a translucent fluorescent cover according to the present invention;

8 is a cross-sectional view showing a third embodiment of a light emitting device using a translucent fluorescent cover according to the present invention;

9 is a cross-sectional view of a conventional translucent fluorescent cover,

10 is a cross-sectional view of a light emitting device using a conventional translucent fluorescent cover;

1L is a graph showing excitation spectra of YAG: Ce-based phosphors;

12 is a graph showing an emission spectrum of a YAG: Ce-based phosphor;

13 is a graph showing an emission spectrum of a light emitting device using a conventional transparent fluorescent cover;

14 is a graph showing an example of emission spectra of a cold cathode fluorescent tube;

15 is a graph showing an example of transmission spectrum of a color filter used in a transmission color liquid crystal display device;

16 is a graph showing the principle of color mixing of a light emitting device using a conventional transparent fluorescent cover;

17 is a graph showing a range of light emission chromaticity of a light emitting device using a conventional translucent fluorescent cover.

<Description of the symbols for the main parts of the drawings>

1,2: wiring conductor 3: light emitting semiconductor chip

4: lead thin wire 5: resin encapsulation

5a: circumferential portion 5b: spherical portion

6: fluorescent cover 6a: cylindrical part

6b: spherical portion 7: phosphor

8: insulating substrate

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a fluorescent cover, in particular a translucent fluorescent cover which emits light of different wavelengths to the outside by converting the wavelength of light that is coated on the light emitting diode and radiated from the light emitting diode.

Fig. 9 shows a cross-sectional view of a conventional fluorescent coating (transparent fluorescent cover) which covers a light emitting diode, converts light emitted from the light emitting diode, and converts light into light. The translucent fluorescent cover 6 composed of a light-transmissive substrate selected from epoxy resin, glass fish resin or silicone and the fluorescent material blended in the substrate should be coated with a gel-like silicone resin and mixed with a powder of the fluorescent substance. The silicon support material is press-molded into a mold having a shape complementary to the external shape of the light emitting diode, and is heated and molded. The fluorescent material mixed in the fluorescent cover 6 is an organic fluorescent substance such as an organic fluorescent pigment or an inorganic fluorescent substance, and the light emitting diodes to which the fluorescent cover 6 is deposited are gallium nitride which can efficiently excite the fluorescent substance. Blue light emitting diodes are used. Since the organic phosphor deteriorates in a short time by the light of the blue light emitting diode, it is actually an yttrium aluminum garnet (YAG) phosphor (hereinafter referred to as YAG: Ce-based phosphor) which has been activated by an inorganic phosphor, especially Ce (cerium). Phosphor) (7) is used.

In the conventional light emitting device shown in Fig. 10, the first wiring conductor 1 constituting the cathode, the second wiring conductor 2 constituting the anode, and the vertex portion of the first wiring conductor 1 are usually formed. A light emitting semiconductor chip 3 such as a gallium nitride compound semiconductor fixed to the formed recess 1a, an electrode (not shown) of the light emitting semiconductor chip 3, and an apex of the second wiring conductor 2 are electrically connected to each other. The lead thin wire 4 and the light-transmissive resin encapsulation 5 covering the upper portions of the first and second wiring conductors 1 and 2, the light emitting semiconductor chip 3, and the lead thin wire 4 are prepared. . The resin encapsulation 5 has a lower circumferential portion 5a and a spherical spherical portion 5b formed in a hemispherical shape on the circumferential portion 5a, and a fluorescent cover 6 is provided on the outer side of the resin encapsulation 5. Is deposited. The fluorescent cover 6 is formed on the cylindrical portion 6a which forms a cavity having a complementary shape with the circumferential portion 5a of the resin encapsulation 5, and is formed on the cylindrical portion 6a and is also formed of the resin encapsulation 5. Is provided with a spherical portion 5b and a spherical portion 6b which forms a cavity having a complementary shape. When the fluorescent cover 6 is mounted on the resin encapsulation through the opening 6c provided at one end of the fluorescent cover 6, the inner surface 6d of the fluorescent cover 6 is formed on the outer surface of the resin encapsulation 5. Because of the close contact, even if an external force such as vibration is applied to the translucent fluorescent cover 6 after mounting, the fluorescent cover 6 does not easily detach from the resin encapsulation 5.

11, 12 and 13 show an excitation spectrum of a YAG: Ce-based phosphor used in a conventional translucent fluorescent cover, a light emission spectrum thereof, and a light emission spectrum of a conventional light emitting device in which a conventional light transmitting fluorescent cover is covered with a blue light emitting diode. Represent each. Part of the blue light irradiated from the light emitting semiconductor chip 3 passes directly through the base of the fluorescent cover 6 and is directly emitted to the outside. However, part of the blue light excites the phosphor 7 carried in the base, so that the excited phosphor ( Yellow light is generated in 7). Since the blue light irradiated from the light emitting semiconductor chip 3 and the yellow light irradiated from the phosphor 7 have a complementary color relationship, the blue light and the yellow light are synthesized and white light is emitted to the outside.

Conventional light emitting devices that emit white light are more resistant to mechanical impact, generate less heat, and do not require high voltage than incandescent lamps, hot cathode fluorescent tubes, or cold cathode fluorescent tubes that make up conventional white light sources. There is an excellent advantage, such as no high-frequency noise, mild to the environment without using mercury. In addition, it is expected to be excellent in mass production at a low cost and to be a next-generation solidified white light source for a simple structure combining a translucent fluorescent cover and a blue light emitting diode.

However, even in the conventional light emitting device having the above-mentioned advantages, since the following drawbacks occur, there are difficulties in producing various problems and limitations in manufacturing and application. When used in a backlight white light source of a display device such as a transmissive color liquid crystal display device that requires a clear emission spectrum, it is a first problem of the conventional light emitting device that a color purity is poor and a defect cannot be expressed.

Usually, three-wavelength cold cathode fluorescent tubes having three primary colors of blue, green, and red emission spectra and spaced apart from each other are used as backlights of transmissive color liquid crystal display devices. As an example, as shown in FIG. 14, the three-wavelength cold cathode fluorescent tube exhibits an emission spectrum having clear peaks of blue, green, and red, respectively. As an example, as shown in FIG. 15, the three primary color pixels of the transmissive color liquid crystal display are constituted. Blue, green and red color filters have a broad transmission spectrum. In the transmissive color liquid crystal display device, the transmission light spectrum of each pixel constituting the three primary colors of blue, green, and red is virtually determined by the emission spectrum of the three-wavelength cold cathode fluorescent tube, and the color filter emits light in an approximate range where the limit cannot be specified. This filter has only a role of preventing the incorporation of other two primary color components (eg, green and blue) into the transmitted light spectrum (eg, red) of a single pixel, and thus the color purity only by the transmission characteristics of the color filter. It is difficult to express high hues.

However, in the conventional light emitting device shown in Fig. 12, since the wavelength range of the light emission spectrum of the YAG: Ce-based phosphor 7 is very wide, the light source of the light emitting device has the light emission spectrum of the divergent wavelength range shown in Fig.13. . Therefore, in the transmissive color liquid crystal display device using the conventional light emitting device, the transmitted light spectrum of each pixel must be determined from the transmissive spectrum of the color filter, and the conventional light emitting device in which the color purity is bad and cannot express vivid colors is the transmissive color liquid crystal display. Not suitable for the backlight of the device.

In addition, in the conventional light emitting device having less red light component, there is a second problem that it cannot be displayed with excellent color balance when used for an auxiliary light source such as a reflective color liquid crystal display device. Background Art With recent advances in information and communication technology, reflective color liquid crystal display devices are being used in mobile devices such as mobile phones, PHS, PDAs, and small notebook PCs. In contrast to the transmissive color liquid crystal display device, the color display is not possible in a dark place without external light in the color reflective liquid crystal display device in which color display is usually performed by using reflected light of external light such as solar rays irradiated onto the surface of the display device. Therefore, an auxiliary light source (front light) emitting white light is provided on the inner surface of the screen of the display device to cope with color display. However, as shown in FIG. 12, when the conventional light emitting device that originally had a small red light component of the emission spectrum of the YAG: Ce-based phosphor 7 was employed as the auxiliary light source of the reflective color liquid crystal display device, as shown in FIG. It consists of a light source which has the emission spectrum with relatively little red light component.

The color balance of the reflective color liquid crystal display device is generally designed based on the spectrum of sunlight, which is a major external light source, and under the spectrum of sunlight containing many red components, the color tone of a conventional light emitting device is almost homogeneous to the entire display image. It becomes a state. However, when a conventional light emitting device having a small red light component is employed as an auxiliary light source of the reflective color liquid crystal display device and the auxiliary light source is turned on in a dark place or the like, the red color is darkened, so that the entire display image is compared with the external light. The problem is that the color tone is unbalanced.

In addition, a third problem occurring in the conventional light emitting device is that yellow light emitted by the YAG: Ce-based fluorescent material 7 has a complementary color relationship with blue light emitted by the blue light emitting device, and therefore, the light emitted from the conventional light emitting device may be human. This keeps the eyes tired.

For example, it is known that cerebral physiology studies show that, when the light in complementary relations such as blue light and yellow light continues to be simultaneously viewed, stable fatigue is promoted. Conventional light-emitting devices produce light emitted to the outside by a mixture of blue light generated from a blue light emitting diode and yellow light generated from a YAG: Ce-based phosphor 7. Therefore, it is obvious that, for example, when a conventional light emitting device is used under a light as a general illumination light source for a long time, such as reading using the eye, the eyes become tired. As in the conventional light emitting device, this problem cannot be essentially avoided as long as a method of producing white light by mixing two colors in complementary colors is used.

In addition, a fourth problem that occurs in the conventional light emitting device is that the emitted light is synthesized by the mixing of blue light emitted by the blue light emitting diode and other wavelength light composed of yellow light emitted by the YAG: Ce-based phosphor 7, and therefore, The chromaticity range is extremely narrow and it is impossible to synthesize light of various colors.

In the mixed-color optical theory, when the chromaticity coordinates of light a on the chromaticity diagram (xa, ya) and the chromaticity coordinates of light b are (xb, yb), and light a and light b of different wavelengths are mixed, The chromaticity coordinates (xm, ym) of the mixed light of light b are on a straight line forming two points of (xa, ya) and (xb, yb), and are also determined by the intensity of light a and the intensity of light b. It is known to be located in the (xa, ya) set if the light a is strong and in the (xb, yb) set if the light b is strong.

Fig. 16 shows the principle of mixed color obtained in a conventional light emitting device. In the conventional light emitting device which synthesizes blue light emitted from the light emitting diode and blue light emitted from the YAG: Ce-based phosphor 7 and mixed with light of different wavelengths of yellow light, the mixed optical theory can be directly applied. have. That is, if light a is blue light emitting blue light emitting diode and light b is yellow light emitting YAG: Ce-based phosphor 7, the light emitted by the conventional light emitting device is the chromaticity coordinate of the blue light emitting blue light emitting diode and YAG. The emission of the Ce-based phosphor 7 can exist only in a straight line that forms chromaticity coordinates of yellow light, and in reality, only light having a very limited color tone can be produced.

In general, by adding another element to YAG, which is the base material of the YAG: Ce-based fluorescent substance 7, the emission wavelength is shifted by changing the composition of the fluorescent substance 7, thereby improving the above-mentioned shortcomings. For example, gallium (Ga) is added to shift to the short wavelength side and gardium (Gd) is added to the shift to the long wavelength side. However, when gallium is added in excessively high concentrations, luminous efficiency is lowered, and gardium is excessively high in concentration. When added, the temperature quenching phenomenon in which the luminous efficiency decreases with temperature rise is promoted. In any case, since the important optical characteristics deteriorate remarkably, the composition range can be adjusted only in a practically limited range.

As is apparent from FIG. 17 showing the light emission chromaticity range of the conventional light emitting device, the light emission chromaticity range of the conventional light emitting device is a peak of the chromaticity coordinates of the light emission of the blue light emitting diode, and a practical YAG: Ce-based phosphor ( It is represented inside the narrow fan shape that forms the chromaticity coordinates of 7). Thus, even if the conventional light-emitting device adjusts the composition of the YAG: Ce-based fluorescent substance 7, for example, the chromaticity can only produce light of a hue of extremely narrow narrow chromaticity range compared to the total area, and light of various hue It could not be used for applications requiring.

Conventional light emitting devices having various advantages over conventional tube-type light sources, due to constraints arising from the emission spectrum of the YAG: Ce-based phosphor 7 used, are a transmissive color liquid crystal display device, a reflective liquid crystal display device, a general illumination light source, and the like. There has been a serious problem that cannot be used suitably for light sources in areas where great progress is expected in the future.

An object of the present invention is to provide a light-emitting fluorescent cover for a light emitting diode that can be suitably applied to display devices such as a transmissive color liquid crystal display device and a backlight which require a clear emission spectrum. Further, an object of the present invention is to provide a light emitting fluorescent cover for a light emitting diode that can be suitably applied to auxiliary light sources such as a reflective color liquid crystal display device requiring excellent color balance. In addition, an object of the present invention is to provide a light-transmitting fluorescent cover for a light emitting diode that emits a gentle light to the eyes in accordance with human physiology. In addition, an object of the present invention is to provide a transparent fluorescent cover for a light emitting diode that can generate light having a color tone of a wide chromaticity range. In addition, an object of the present invention is to provide a light-transmitting fluorescent cover for a light emitting diode having excellent quality at low cost.

For example, the transparent fluorescent cover for a light emitting diode according to the present invention, which covers a light emitting diode emitting light of a first light emitting wavelength band having a first light emitting wavelength peak in a blue region within a range of 420 nm to 480 nm, has a first light emitting wavelength band. Phosphor 7 that is excited by the light of? The phosphor 7 is excited at the time of excitation and the light of the 2nd emission wavelength band which has the 2nd emission wavelength peak in the green area | region separated from the 1st emission wavelength peak, and the 3rd emission in the red area | region separated from the 2nd emission wavelength peak. The light of the third emission wavelength band having the wavelength peak is emitted. Therefore, the transparent fluorescent cover for a light emitting diode has two kinds of light: one kind of light having a first emission wavelength band irradiated from the light emitting diode, a second emission wavelength band converted from a first emission wavelength band, and a third emission wavelength band. A total of three types of light can emit light. The phosphor 7 includes a lanthanoid aluminate-based phosphor revived from manganese, and has a green light emitting area and a red light emitting area with respect to the change in the content of manganese. The lanthanoid aluminate-based phosphors in which manganese is added in different contents are phosphors of the same component and produce green light emission and red light emission. Phosphor 7 is represented by the formula: LaAl 11 O 18 : Mn 2+ , La 2 O 3 .11Al 2 O 3 : Mn 2+ , La 1-x Al 11 (2/3) + x O 19 : Mn 2+ x However, at least one of 0.1 ≦ x ≦ 0.99, (La, Ce) Al 11 O 19 : Mn 2+ and (La, Ce) Mg Al 11 O 19 : Mn 2+ .

[Embodiment of the Invention]

Hereinafter, embodiments of the light-transmissive fluorescent cover for a light emitting diode according to the present invention will be described with reference to FIGS. 1 to 6.

The light-emitting fluorescent cover for light emitting diode according to the present invention has the same mounting structure as that of the conventional fluorescent cover shown in FIGS. 9 and 10, but in the embodiment of the present invention, the light emitting semiconductor chip 3 is 420 nm. The first light emission wavelength band (band) having the first light emission wavelength peak is emitted in the blue region within the range of ˜480 nm. The La aluminate: Mn-based phosphor 7 carried in the fluorescent cover 6 is excited with light of the first emission wavelength band, and at this time, the second emission wavelength peak in the green region separated from the first emission wavelength peak. The light-emitting fluorescent light emitting diode for light emitting diode according to the present invention emits light of a second light emitting wavelength band having a light emission rate and a light of a third light emitting wavelength band having a third light emission wavelength peak in a red region separated from the second light emission wavelength peak. The cover can emit light of three kinds of spectrum in total, and can generate these monochromatic light and synthetic color light. Phosphor (7) is, for example, the formula LaAl 11 O 18: M 2+ or La 2 O 3 · 11Al 2 O 3: La aluminate represented by the Mn 2+: a solenoid ranteo raised from a Mn-based fluorescent material (7) Mn · One of the aluminate-based phosphors 7 is used.

A first feature of the light emitting device using the present invention is that it has the same emission spectrum of three primary colors of blue light, green light and red light, which are the same as the three wavelength cold cathode fluorescent tube. As shown in Fig. 1, the emission spectrum of the light emitting device to which the present invention is applied is 690 of blue light of a blue light emitting diode centered on 450 nm, and green light of peak 517 nm of La aluminate: Mn-based phosphor 7 and 690. It consists of three light emission wavelength bands spaced apart from each other of red light having a peak of nm. Therefore, the emission spectrum shown in FIG. 1 is different from the emission spectrum of the conventional light emitting device shown in FIG. 13, has a spectrum similar to that of the cold cathode fluorescent tube shown in FIG. 14, and has a transmission color liquid crystal display device shown in FIG. It also matches well with the transmission spectrum of the color filter.

As an embodiment of the present invention, the phosphor 7 is specifically a lanthanoid aluminate-based phosphor revived in manganese. The phosphor 7 is preferably a Lanton (La) aluminate represented by the formula: LaAl 11 O 18 : Mn 2+ or La 2 O 3 · 11Al 2 O 3 : Mn 2+ : Mn-based phosphor or La 1-x Al 11 (2/3) + x O 19 : Mn 2+ x (0.1 ≦ x ≦ 0.99), (La, Ce) Al 11 O 19 : Mn 2+ , (La, Ce) MgAl 11 O 19 : The phosphor represented by at least one of Mn 2+ may be used. The base material of the transparent fluorescent cover is silicone resin, polyester resin, acrylic resin, epoxy resin, urethane resin, nylon resin, polyamide resin, polyimide resin, vinyl chloride resin, polycarbonate resin, polyethylene resin, Teflon resin, polystyrene resin, It consists of 1 type (s) or 2 or more types chosen from polypropylene resin and polyolefin resin.

The translucent fluorescent cover 6 according to the present invention is formed by a resin molding method such as transfer mold or potting by mixing a powder of La aluminate: Mn-based phosphor on a substrate, for example, and a resin encapsulation member 5 of a light emitting diode. Is deposited. When a flexible resin such as silicone resin, vinyl chloride resin, polyimide resin, or the like is selected as the base material, it is possible to impart some elasticity to the fluorescent cover 6, and the fluorescent cover is elastically applied to the resin encapsulation member of the light emitting diode. It can be attached easily, and adhesiveness becomes high, and self-supporting maintenance of the fluorescent cover 6 is attained. Alternatively, the fluorescent cover 6 is adhered to the resin encapsulation 5 with a light-transmissive adhesive, or the transparent fluorescent cover 6 is formed by a heat-shrinkable base material, and then covered with the resin encapsulation 5 and heated. It may be in close contact by the heat shrink action. Alternatively, the fluorescent encapsulation 6 of the present invention may be deposited directly onto the resin encapsulation member 5 of the light emitting diode by a method such as spraying or dipping. The translucent fluorescent cover 6 of the present invention may have a uniform thickness or a partial thickness throughout its entire circumference.

When manufacturing a light emitting diode, the light emitting semiconductor chip 3 which has a semiconductor layer formed on the board | substrate is adhesively fixed to the bottom surface of the recessed part 1a of the wiring conductor 1 with an adhesive agent. The light emitting semiconductor chip 3 has a gallium nitride compound semiconductor layer, such as GaN, InGaN, InGaAlN, formed on a semiconductor substrate such as SiC or a ceramic substrate such as sapphire by a single crystal growth method such as epitaxial growth. The wavelength peak wavelength is a blue light emitting diode chip of 420 nm to 480 nm. Then, after the lead thin wire 4 is electrically connected to the electrode of the light emitting semiconductor chip 3 and the apex of the second wiring conductor 2 by wire bonding, an organic resin such as an epoxy resin having light transparency It is formed by mold (resin encapsulation) in a shell shape or the like.

Known to be excited by ultraviolet rays by the ball revival of Mn 2+ and Eu 2+ La 2 O 3 · 11Al 2 O 3: Mn 2+, Eu 2+ phosphor by the UV light energy received from the Eu 2+ where Although the present Mn 2+ has a light emission principle of emitting light, the present inventors have found that La 2 O 3 · 11Al 2 O 3 : Mn 2+ phosphor which does not contain Eu is efficiently excited by blue light, and the amount of Mn added is adjusted. The present invention focuses on having two different light emission wavelength bands of green and red in the light emission wavelength regions spaced apart from each other.

La aluminate: divalent manganese ions (Mn 2+ ) used as activators of Mn-based phosphors are sensitive to the size of the crystal field of the base material, so that if there are different Mn 2+ positions in the base material, a plurality of light emission wavelengths It is characterized by the appearance of a band. La aluminate is a base material having a spinel structure, in which Mn 2+ occupies four coordination and six coordination, and generates green light emission with peak at 517 nm and red light emission with peak at 690 nm, respectively. In addition, it is efficiently excited in the blue region around 450 nm. The excitation spectrum of La aluminate: Mn type phosphor is shown in FIG. 2, and the emission spectrum of La aluminate: Mn type phosphor is shown in FIG.

The ratio of green light emission to red light emission of La aluminate: Mn-based phosphor is determined according to the amount of Mn added. Fig. 4 shows the relationship of the emission color by the amount of Mn added (weight or capacity ratio) of the La aluminate: Mn-based phosphor. When the amount of Mn added is less than 0.4, only green light emission appears, but when the amount added increases, red light emission appears, and when the amount added exceeds 0.8, only the red light emission changes, and 0.4 to 0.8 are transient regions. Accordingly, the La aluminate: Mn-based phosphor can selectively adjust the emission color in a wide emission wavelength range from green to red by adjusting the amount of Mn added.

Therefore, the combination of the blue light emitting diode and the La aluminate: Mn-based phosphor causes the La aluminate: Mn-based phosphor to be excited by a part of the blue light of the blue light emitting diode to generate green light and red light. In this embodiment, it is possible to realize a light emitting device that emits mixed light of the remaining blue light of the blue light emitting diode that is not converted into wavelengths by simple means, that is, light of three primary colors of blue light, green light, and red light spaced apart from each other.

La aluminate: Mn-based phosphor is an example of the phosphor that can be used in the present invention, the base material of the phosphor used in the present invention is not limited thereto. Lanternoid aluminate, which is a generic term for the phosphor base material used in the present invention, is an aluminate of a lanthanoid element, that is, an oxidized compound of the lanthanoid element and aluminum.

Lanternoid elements known as rare earth elements include La (lantern), Ce (cerium), Pr (praseodymium), Nd (neodymium), Pm (promethium), Sm (samarium), Eu (Europeium), and Gd (guard). Linium), Tb (telvium), Dy (dysprosium), Ho (holmium), Er (elbium), Tm (trium), Yb (ytterbium), Lu (luteteium).

When the aluminate or plural elemental aluminate salts of the above elemental groups are not limited to La, and used in the phosphor matrix of the present invention, the excitation wavelength of the phosphor and the light emission wavelengths of green and red can be adjusted in various ways. The color range of the light emitting device to be applied can be variously changed. Moreover, in order to improve the temperature characteristic and luminous efficiency of the fluorescent substance of this invention, it is also possible to add activators other than Mn.

As shown in Fig. 4, the La aluminate: Mn-based fluorescent material used in the translucent fluorescent cover according to the present invention can freely adjust the component ratio of green light and red light. In addition, the light emitting device to which the present invention is applied can freely adjust the balance between the blue light of the blue light emitting diode and the green light and the red light of the phosphor 7 by adjusting the concentration of the phosphor 7, and therefore the white light is applied from the light emitting device to which the present invention is applied. It can be combined with the light of the system and emit mixed light to the outside. Therefore, the light emitting device using the present invention can be suitably used also for a backlight of a transmissive color liquid crystal display device. 5 shows the principle of color mixing in a light emitting device to which the present invention is applied.

A second feature of the light emitting device using the present invention is that, when the compounding ratio of the phosphor 7 is adjusted, the color tone balance of the same display image as that of the external light can be obtained. The emission spectrum of the La aluminate: Mn-based phosphor 7 used in the light-transmissive fluorescent cover according to the present invention is different from the emission spectrum of the YAG: Ce-based phosphor 7 used in the conventional light-transmissive fluorescent cover shown in FIG. As shown in Fig. 3, the deep red region has a broad spectrum. In addition, as shown in Fig. 4, since the La aluminate: Mn-based phosphor 7 can freely adjust the component ratio of green light and red light by adjusting Mn concentration, the light emitting device to which the present invention is applied has no external light such as solar light. The same color balance as that of the light source can be provided. Therefore, the light emitting device using the present invention can be suitably used also for the auxiliary light source of the reflective color liquid crystal display device.

A third feature of the light-emitting device to which the present invention is applied is that the eye is not tired even when using the eye for a long time. Different from the emission spectrum of the conventional light emitting device shown in FIG. 13, the light emission spectrum of the light emitting device using the present invention is composed of blue light, green light, and red light as shown in FIG. These lights do not have a complementary color relationship with each other, and the eyes are not tired even when the light emitting device according to the present invention is used for work using the eyes for a long time. Therefore, the light emitting device to which the present invention is applied can be suitably used also as a general illumination light source.

A fourth feature of the light emitting device using the present invention is that light of various color tones can be created. In the light-emitting device to which the present invention is applied, the emitted light is composed of blue light, green light, and red light, and these mixed light occupies a very wide area on the chromaticity diagram. It can be seen that the light emitting device to which the present invention shown in FIG. 6 is applied has an extremely wide chromaticity range compared with the light emitting color range of the conventional light emitting device shown in FIG. 17. Therefore, the light emitting device using the present invention can be suitably used even in applications requiring a rich color expression.

In general, the light emitting diodes have a directing characteristic of light emitted and have different light intensities depending on the direction of the directivity angle. Therefore, when the transparent fluorescent cover with uniform thickness is applied over the entire circumference, in the strong and weak directions, There are cases where different emission colors occur. In order to prevent this, if the thickness of the portion where the light emission intensity is strong and the thickness of the weak portion is reduced and the thickness of the translucent fluorescent cover is changed according to the light emission intensity distribution of the light emitting diode, the light emission color becomes uniform throughout the entire circumference. Fig. 7 shows a second embodiment of the light-transmissive fluorescent cover according to the present invention in which the light-transmissive fluorescent cover is improved. The light emitting diode having the shell-shaped resin encapsulation 5 has the strongest light intensity at the tip portion in the spherical portion 5b forming the lens shape of the resin encapsulation 5, and gradually decreases the light intensity along the lateral direction. Has a directing characteristic. According to the present embodiment, the spherical portion 6b of the fluorescent cover 6 corresponding to the tip portion of the resin encapsulation body 5 is made thick so as to conform to the directivity characteristic of the shell-shaped light emitting diode. Therefore, it becomes thin gradually and can obtain uniform luminescent color over the whole circumference.

Fig. 8 shows a third embodiment of a light emitting device in which the light-emitting fluorescent cover of the present invention is applied to an ultra-small light emitting diode for surface installation called a chip LED. The light emitting diode shown in FIG. 3 has a pair of wiring conductors 1 and 2 extending from one main surface 8a of the insulating substrate 8 to the other main surface 8b and the ends of the wiring conductor 1. A light emitting semiconductor chip 3, which is a blue light emitting diode chip bonded to an adhesive part, lead wires 4a and 4b for electrically connecting the electrodes of the light emitting semiconductor chip 3 to the wiring conductors 1 and 2, and an insulating substrate On one main surface 8b side of (8), a resin encapsulation member 5 such as an epoxy resin formed by injection molding or the like is provided. In this embodiment, since the self-maintenance to the inclined side surface of the resin encapsulation body 5 is difficult, the translucent fluorescent cover 6 is adhere | attached to the resin encapsulation body 5 using a light transmissive adhesive agent. As another method, it may form directly on the resin encapsulation body 5 by spraying or dipping.

In the embodiment of the light emitting device using the translucent fluorescent cover 6 according to the present invention, for convenience, the light emitting diode chip in which a gallium nitride-based light emitting layer is provided on a conductive SiC substrate is used as the structure of FIG. In the structure of 8, a light emitting diode chip in which a gallium nitride-based light emitting layer is provided on an insulating sapphire substrate is used. However, the present invention is not limited to the above materials and structures. Even the light emitting device using the present invention can be used.

As described above, the light emitting device according to the present invention has excellent characteristics that can overcome many problems of the conventional light emitting device using the blue light emitting diode and the YAG: Ce-based phosphor 7. The semiconductor light emitting device of the present invention, in particular, emits white light, has a higher mechanical strength and a lower heat generation rate than incandescent lamps, hot cathode fluorescent tubes, cold cathode fluorescent tubes, etc., which are conventional white light sources. Since the high voltage is unnecessary, high frequency noise is not generated, and mercury is used, the lighting is gentle to the environment, and thus, excellent advantages can be expected.

In the light emitting device using the translucent fluorescent cover according to the present invention, the balance between the blue light of the blue light emitting diode and the green light and the red light of the phosphor can be freely adjusted, and the color balance of the display image that is the same as the external light can be obtained. It can be used suitably as an auxiliary light source of a display apparatus. Since it can be combined with white light and emit mixed color light to the outside, it can be suitably used for a backlight of a transmissive color liquid crystal display device. In addition, by combining the three primary colors of blue light, green light, and red light, which are not complementary to each other, the light emitted to the outside can be synthesized into a wide range of chromatic tones. Therefore, even when the eye is used for a long time, the eye is not tired and can be suitably used as a general illumination light source. In addition, it is possible to obtain a transparent fluorescent cover for a light emitting diode having excellent quality at low cost.

Claims (11)

  1. A cover for covering a light emitting diode emitting light of a first light emitting wavelength band having a first light emitting wavelength peak in a blue region within a range of 420 nm to 480 nm.
    Silicone resin, polyester resin, acrylic resin, epoxy resin, urethane resin, nylon resin, polyamide resin, polyimide resin, vinyl chloride resin, polycarbonate resin, polyethylene resin, teflon resin, polystyrene resin, polypropylene resin and polyolefin resin The base material which consists of 1 type, or 2 or more types chosen from,
    Formula: LaAl 11 O 18 : Mn 2+ , La 2 O 3 · 11Al 2 O 3 : Mn 2+ , La 1-x Al 11 (2/3) + x O 19 : Mn 2+ x (where 0.1 ≦ x ≦ 0.99), (La, Ce) Al 11 O 19 : Mn 2+ , and a phosphor mixed in the base material,
    The phosphor is excited with light of the first emission wavelength band, and when excited, light of a second emission wavelength band having a second emission wavelength peak in a green region separated from the first emission wavelength peak, and the second A light emitting fluorescent cover for light emitting diodes, characterized in that for emitting light of a third emission wavelength band having a third emission wavelength peak in a red region separated from the emission wavelength peak.
  2. The translucent fluorescent cover for light emitting diode of claim 1, wherein the wavelength of the second light emission peak is in the range of 490 nm to 550 nm, and the wavelength of the third light emission peak is in the range of 660 nm to 720 nm.
  3. The transparent fluorescent cover of claim 1 or 2, wherein the translucent fluorescent cover has a different thickness according to the light emission intensity distribution of the light emitting diode.
  4. The light emitting fluorescent cover of claim 1 or 2, wherein the light transmitting fluorescent cover is self-sustaining in close contact with the light emitting diode.
  5. The transparent fluorescent cover of claim 1 or 2, wherein the transparent fluorescent cover has heat shrinkability.
  6. The light-transmissive fluorescent cover for a light emitting diode of claim 1 or 2, wherein the light-transmissive fluorescent cover is fixed to the light-emitting diode by a light-transmitting adhesive.
  7. The light emitting fluorescent cover for light emitting diode of claim 1 or 2, wherein the light transmitting fluorescent cover is formed on the surface of the light emitting diode by spraying or dipping the light emitting diode.
  8. The transparent fluorescent cover for a light emitting diode of claim 1, wherein the phosphor is capable of adjusting a component ratio of green light and red light by adjusting Mn concentration.
  9. delete
  10. delete
  11. delete
KR20010081578A 2000-12-22 2001-12-20 Light permeable fluorescent cover for light emitting diode KR100587126B1 (en)

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Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7091656B2 (en) * 2001-04-20 2006-08-15 Nichia Corporation Light emitting device
WO2002086978A1 (en) * 2001-04-20 2002-10-31 Nichia Corporation Light emitting device
JP2002374007A (en) * 2001-06-15 2002-12-26 Sanken Electric Co Ltd Light-emitting apparatus
TW507853U (en) * 2002-01-25 2002-10-21 Shi-Huang Lin Series type lamp
US10340424B2 (en) 2002-08-30 2019-07-02 GE Lighting Solutions, LLC Light emitting diode component
US7800121B2 (en) 2002-08-30 2010-09-21 Lumination Llc Light emitting diode component
US7224000B2 (en) 2002-08-30 2007-05-29 Lumination, Llc Light emitting diode component
US6744077B2 (en) 2002-09-27 2004-06-01 Lumileds Lighting U.S., Llc Selective filtering of wavelength-converted semiconductor light emitting devices
JP2004138958A (en) * 2002-10-21 2004-05-13 Semiconductor Energy Lab Co Ltd Display device
US7015636B2 (en) * 2002-10-23 2006-03-21 Charles Bolta Balanced blue spectrum therapy lighting
AU2002952652A0 (en) * 2002-11-14 2002-11-28 University Of Technology, Sydney A hybrid lighting system
JP2004228065A (en) * 2002-11-29 2004-08-12 Ngk Insulators Ltd Electronic pulse emission device
JP2004296830A (en) * 2003-03-27 2004-10-21 Solidlite Corp Method of manufacturing white light-emitting diode
US20050006659A1 (en) * 2003-07-09 2005-01-13 Ng Kee Yean Light emitting diode utilizing a discrete wavelength-converting layer for color conversion
US7029935B2 (en) * 2003-09-09 2006-04-18 Cree, Inc. Transmissive optical elements including transparent plastic shell having a phosphor dispersed therein, and methods of fabricating same
US20050099808A1 (en) * 2003-11-12 2005-05-12 Cheng Tzu C. Light-emitting device
WO2005067064A1 (en) * 2003-11-25 2005-07-21 Shichao Ge Light emitting diode and light emitting diode lamp
US7518158B2 (en) * 2003-12-09 2009-04-14 Cree, Inc. Semiconductor light emitting devices and submounts
US20050227394A1 (en) * 2004-04-03 2005-10-13 Bor-Jen Wu Method for forming die protecting layer
US7372198B2 (en) * 2004-09-23 2008-05-13 Cree, Inc. Semiconductor light emitting devices including patternable films comprising transparent silicone and phosphor
DE102004047727B4 (en) * 2004-09-30 2018-01-18 Osram Opto Semiconductors Gmbh Luminescence diode chip with a converter layer and method for producing a luminescence diode chip with a converter layer
US7982229B2 (en) * 2004-11-18 2011-07-19 Koninklijke Philips Electronics N.V. Light emitting device with conversion structure
KR100588209B1 (en) 2005-01-19 2006-06-08 엘지이노텍 주식회사 White light emitting device and method for fabricating the same
DE102005009066A1 (en) * 2005-02-28 2006-09-07 Osram Opto Semiconductors Gmbh Method for producing an optical and a radiation-emitting component and optical and radiation-emitting component
US7501659B2 (en) * 2005-04-12 2009-03-10 Japan Cash Machine Co., Ltd. LED device and optical detector therewith for bill validator
JP4799341B2 (en) * 2005-10-14 2011-10-26 東芝ライテック株式会社 Lighting device
US20070152309A1 (en) * 2005-12-29 2007-07-05 Para Light Electronics Co., Ltd. Light emitting diode
KR100746749B1 (en) 2006-03-15 2007-08-09 (주)케이디티 Photoluminescent diffusion sheet
CN101225931A (en) * 2007-01-19 2008-07-23 童国钧 LED lamp string devices which LED lamp body irradiation brightness is approximately same with each other and implementing method thereof
JP5341915B2 (en) * 2008-03-28 2013-11-13 パナソニック株式会社 Resin molded product, semiconductor light emitting source, lighting device, and resin molded product manufacturing method
US7888691B2 (en) 2008-08-29 2011-02-15 Koninklijke Philips Electronics N.V. Light source including a wavelength-converted semiconductor light emitting device and a filter
US8900921B2 (en) 2008-12-11 2014-12-02 Stats Chippac, Ltd. Semiconductor device and method of forming topside and bottom-side interconnect structures around core die with TSV
CN102020819A (en) * 2009-09-16 2011-04-20 大连路明发光科技股份有限公司 Plastic light-conversion fluorescent granules and application thereof
US8593040B2 (en) 2009-10-02 2013-11-26 Ge Lighting Solutions Llc LED lamp with surface area enhancing fins
JP2011192598A (en) * 2010-03-16 2011-09-29 Stanley Electric Co Ltd White led light source module
US8297767B2 (en) 2010-09-07 2012-10-30 Xicato, Inc. LED-based illumination modules with PTFE color converting surfaces
TWI447969B (en) * 2010-10-20 2014-08-01 Interlight Optotech Corp Light-emitting diode package structure
WO2012061985A1 (en) * 2010-11-10 2012-05-18 Chang Kuo-Kuang Method for manufacturing cover plate and method for manufacturing encapsulated light-emitting diode using the cover plate
US20120134161A1 (en) * 2010-11-30 2012-05-31 Nobuo Kawamura Lighting apparatus
CN102544302A (en) * 2010-12-17 2012-07-04 郑榕彬 Direct liquid cooling method for light emitting didoes and light emitting diode package utilizing method
JP5899507B2 (en) * 2011-04-27 2016-04-06 パナソニックIpマネジメント株式会社 Light emitting device and lighting device using the same
CN202371641U (en) * 2011-10-14 2012-08-08 郑榕彬 Light-emitting diode (LED) lamp with double-layer fluorescent powder
JP5751154B2 (en) * 2011-12-14 2015-07-22 豊田合成株式会社 Light emitting device and manufacturing method thereof
US9500355B2 (en) 2012-05-04 2016-11-22 GE Lighting Solutions, LLC Lamp with light emitting elements surrounding active cooling device
JP5945867B2 (en) * 2012-05-11 2016-07-05 パナソニックIpマネジメント株式会社 Lighting device
JP2014209617A (en) * 2013-03-29 2014-11-06 株式会社朝日ラバー Led lighting system, manufacturing method of the same and led lighting method
US9683169B2 (en) * 2013-10-11 2017-06-20 Performance Indicator, Llc Smoothing phosphors for AC LED lighting
USD747228S1 (en) * 2013-11-04 2016-01-12 Fibar Group S.A. Door/window sensor
CA3030495A1 (en) * 2014-03-04 2015-09-11 Novadaq Technologies ULC Spatial and spectral filtering apertures and optical imaging systems including the same
KR20160135294A (en) * 2014-03-18 2016-11-25 우베 고산 가부시키가이샤 Ceramic composite material for optical conversion, production method therefor, and light-emitting device provided with same
JP2016219613A (en) * 2015-05-21 2016-12-22 日亜化学工業株式会社 Light-emitting device
JP2018527994A (en) 2015-08-31 2018-09-27 ノバダック テクノロジーズ ユーエルシー Polarization-dependent filter, system using the same, and related kits and methods
JP6698676B2 (en) * 2015-10-20 2020-05-27 京セラ株式会社 Indoor light source and lighting system
CN109140252A (en) * 2018-08-27 2019-01-04 佛山市顺德区蚬华多媒体制品有限公司 Lamps and lanterns, LED light source and its manufacturing method
KR102035972B1 (en) * 2019-04-29 2019-10-29 셀바이오코리아 주식회사 Mask pack having a phototherapy function

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL187212B (en) * 1978-11-21 1991-02-01 Philips Nv Luminescent terrair aluminate; luminescent screen; low-pressure mercury discharge lamp.
JPH04239588A (en) 1991-01-22 1992-08-27 Matsushita Electron Corp Aluminate fluorescent material and fluorescent lamp produced by using the same
US6414426B1 (en) * 1997-02-13 2002-07-02 Matsushita Electric Industrial Co., Ltd. High-efficiency light source
SE506845C2 (en) 1996-06-28 1998-02-16 Alfa Laval Ab Plate heat exchanger with bälgförsett feed connection pipe
TW383508B (en) * 1996-07-29 2000-03-01 Nichia Kagaku Kogyo Kk Light emitting device and display
WO1998006793A1 (en) * 1996-08-08 1998-02-19 Kabushiki Kaisha Tokyo Kagaku Kenkyusho Process for the preparaiton of aluminate-base phosphor
DE19638667C2 (en) * 1996-09-20 2001-05-17 Osram Opto Semiconductors Gmbh Mixed-color light-emitting semiconductor component with luminescence conversion element
JP3434658B2 (en) * 1997-01-14 2003-08-11 サンケン電気株式会社 Semiconductor light emitting device
US5962971A (en) * 1997-08-29 1999-10-05 Chen; Hsing LED structure with ultraviolet-light emission chip and multilayered resins to generate various colored lights
US6340824B1 (en) * 1997-09-01 2002-01-22 Kabushiki Kaisha Toshiba Semiconductor light emitting device including a fluorescent material
US6252254B1 (en) * 1998-02-06 2001-06-26 General Electric Company Light emitting device with phosphor composition
JP2907286B1 (en) * 1998-06-26 1999-06-21 サンケン電気株式会社 Resin-sealed semiconductor light emitting device having fluorescent cover
US5959316A (en) * 1998-09-01 1999-09-28 Hewlett-Packard Company Multiple encapsulation of phosphor-LED devices
JP3424566B2 (en) * 1998-09-29 2003-07-07 松下電器産業株式会社 Fluorescent lamps and lighting equipment
US6656608B1 (en) * 1998-12-25 2003-12-02 Konica Corporation Electroluminescent material, electroluminescent element and color conversion filter
JP2002118292A (en) 2000-10-11 2002-04-19 Sanken Electric Co Ltd Semiconductor light-emitting device

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EP1220332A3 (en) 2005-10-12
US20020080501A1 (en) 2002-06-27

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