KR100580646B1 - Method of exposing using electron beam - Google Patents

Abstract

An electron beam exposure method is disclosed. According to the present invention, a first step of setting a main field in an exposure area of an electron beam exposure target, a plurality of subfields in the main field, a second step of selecting a main field to be exposed, and at least one of the selected main field A third step of selecting subfields of the second field; a fourth step of performing electron beam exposure of the selected subfield; and at least one other subfield that is not exposed without being neighbored to the selected subfield; Provided is an electron beam exposure method comprising a fifth step.

Description

Method of exposing using electron beam

1 is a view for explaining an electron beam exposure method according to the prior art.

2 to 5 are views for explaining the electron beam exposure method according to the first to fourth embodiments of the present invention.

6 and 7 are views for explaining an electron beam exposure method according to a fifth embodiment of the present invention.

8 is a flow chart related to the electron beam exposure method according to the first to fourth embodiments of the present invention.

9 and 10 are flowcharts of an electron beam exposure method according to fifth and sixth embodiments of the present invention, respectively.

* Description of the symbols for the main parts of the drawings *

10: sample or photosensitive film MF1-MF4: 1st-4th main field

SF: subfield R: bunch of numbers representing rows

V is a bunch of numbers that represent a column

1. Field of Invention

The present invention relates to a method for manufacturing a semiconductor device, and in more detail,

It relates to an electron beam exposure method.

2. Description of related technology

With the development of the manufacturing technology of semiconductor devices, semiconductor production equipment is also developing together. A representative example is an electron beam exposure apparatus capable of drawing a fine pattern. Recently, an apparatus employing various exposure methods in consideration of productivity has been introduced.

Among the introduced electron beam exposure equipments, there are electron beam exposure equipments in which a spot of an electron beam is continuously changed during exposure, as well as electron beam exposure equipments using an optical system such as a projection type, a multi electron beam and a multi column method, and optical lithography.

As the electron beam is incident on the specimen or the photoresist in the electron beam exposure apparatus, primary electrons, secondary electrons, and photons, that is, x-rays are detected. In addition, electrons are scattered in the process of injecting the electron beam into the specimen or the photoresist film, and the scattering is a major obstacle in implementing the fine pattern.

There are two types of scattering of the electron beam, one of which is forward scattering in the direction in which the electron beam is incident inside the photosensitive film, and the other is backward scattering from the substrate.

Forward scattering mainly affects the electron beam distribution in the photosensitive film. Therefore, when performing electron beam exposure, the electrons in the photosensitive film dominate the photosensitive film with forward scattering rather than back scattering. As a result, the effective width of the beam increases under the photoresist.

This scattering process of the electron beam has more influence when the patterns are substantially in close proximity.

For example, when the pattern to be exposed is close, the other pattern existing in the electron scattering range is affected by the electron beam exposure to one pattern. That is, a phenomenon in which the electron beam is incident on a portion where the electron beam of the photoresist film should not be incident causes the pattern to be distorted.

This phenomenon is called the proximity effect, and what happens in the same pattern is called the intra-proximity effect, and what affects another pattern that is close is the inter-proximity effect.

The scattering phenomenon of the electrons brings about the effect of increasing the temperature of the photoresist film and the surface together with the above-mentioned proximity effect. By increasing the temperature of the photosensitive film inside and the surface, the exposure characteristic of the photosensitive film is changed, and as a result, the pattern is distorted as in the proximity effect.

In the electron beam exposure method, an exposure area of a sample or a photoresist film is divided into a main field, and the main field is further divided into a plurality of sub-fields. The main field refers to a maximum deflection region that can be exposed by scanning an electron beam once on the specimen or photoresist with a chuck on which the specimen or photoresist is fixed. The subfield refers to a dimension area of the pattern corresponding to the 1 bit when the minimum amount of the signal transmission information delivered by the electron beam exposure equipment at the time of exposing the pattern is 1 bit.

In the electron beam exposure method according to the related art, the first to fourth main fields MF1, MF2, MF3, and MF4 set in the entire exposure area 10 are sequentially exposed as shown in FIG. 1. Subfields SF of each main field are also sequentially exposed. For example, when the first main field MF1 is exposed, first the first subfield SF1 is exposed, then the second subfield SF2 is exposed, and then the third subfield SF3 is exposed. In this order, the last subfield SFn is exposed. An arrow in the first main field MF1 indicates a traveling direction of electron beam exposure.

As described above, since the subfields in the main field are sequentially exposed in the electron beam exposure method according to the related art, the temperature of the inside and the surface of the photoresist film becomes high due to scattering of electrons during the exposure of the subfield and the subfield. The exposure characteristics may be changed and the pattern may be distorted. In other words, the dimensional accuracy and precision of the originally designed pattern and the finally obtained pattern may deteriorate.

On the other hand, soft programs have been developed to correct the proximity effect, but they only correct the minimum area where the proximity effect occurs. In order to correct only the size of the exposure pattern and calculate a process shift amount for a part out of the size, a large amount of data processing is required. Also, complex patterns and entire patterns cannot be completely removed from the proximity effect.

The technical problem to be achieved by the present invention is to improve the above-described problems of the prior art, by removing the proximity effect and heat generation problems caused by scattering of electrons when the pattern is exposed by using an electron beam during the semiconductor process, The present invention provides an electron beam exposure method that can improve the dimensional accuracy and precision of a designed pattern and a pattern obtained after exposure, and can implement a pattern having a shape and structure as a whole.

In order to achieve the above technical problem, the present invention provides a first step of setting a main field in an exposure area of an electron beam exposure target, a plurality of subfields in the main field, a second step of selecting a main field to be exposed, A third step of selecting at least one subfield in the selected main field, a fourth step of performing electron beam exposure on the selected subfield, and at least one other sub which is not exposed without being neighbored to the selected subfield And a fifth step of selecting a field to perform electron beam exposure.

The third to fifth steps may be repeated until the electron beam exposure of all the subfields of the selected main field is completed.

In the third step, two neighboring subfields may be selected.

In the fifth step, another subfield located at a position spaced apart from the selected subfield by at least one subfield may be selected.

Also, in the fifth step, a subfield located in a diagonal direction of the selected subfield may be selected.

The plurality of subfields form a matrix, and electron beam exposure for each row may proceed in the same direction, and electron beam exposure for two adjacent rows may proceed in the opposite direction. The electron beam exposure of the two adjacent rows may be performed alternately.

Some of the plurality of subfields may be sequentially subjected to electron beam exposure.

In the fifth step, the other subfields may be randomly selected from the plurality of subfields.

In order to achieve the above technical problem, the present invention also provides a first step of setting a main field in an exposure area of an electron beam exposure target, and setting a plurality of subfields in the main field, and at least some subfields of the plurality of subfields. Is sequentially exposed, and a second step of exposing a time difference longer than the time difference inherent between the two adjacent sub-fields of the electron beam exposure equipment provides an electron beam exposure method.

Here, some subfields of the sequentially exposed subfields may be exposed with the same time difference as the inherent time difference. Some subfields of the plurality of subfields may be exposed out of order.

In order to achieve the above technical problem, the present invention also provides a first step of setting a main field in an exposure area of an electron beam exposure target, and setting a plurality of subfields in the main field, and independently or overlapping the plurality of subfields, respectively. Setting a plurality of pattern files, assigning coordinates to each pattern, and arbitrarily designating coordinates among the given coordinates, and performing electron beam exposure on the designated coordinates to form a pattern corresponding to the arbitrarily designated coordinates. It provides a electron beam exposure method comprising a third step.

Herein, a fourth step of designating another coordinate that is not overlapped with the arbitrarily designated coordinate among the given coordinates after the third step, and performing an electron beam exposure on the designated other coordinates to obtain a pattern corresponding to the other coordinates. The fifth step of forming and the sixth step of repeating the third to the fifth step may be further performed until all of the plurality of subfields are exposed. Some of the subfields of the plurality of subfields may be sequentially exposed or discretely overlapped without pattern files.

By using the present invention, it is possible to improve the proximity effect and heat generation problems caused by scattering of electrons when patterning the photoresist film in a predetermined form using an electron beam. As a result, the accuracy and precision of the first designed pattern and the pattern obtained after exposure can be improved. And since the electron beam exposure method of the present invention is not limited to specific equipment, the electron beam exposure method of the present invention can be applied to all electron beam exposure equipment. In addition, fine, dense and repeated complex patterns can be accurately patterned without distortion, thereby realizing various types of fine patterns.

Hereinafter, an electron beam exposure method according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. In this process, the thicknesses of layers or regions illustrated in the drawings are exaggerated for clarity.

The electron beam exposure method according to the present invention is characterized in that the subfields included in the main field are not sequentially executed, but discretely or nonsequentially. There may be various embodiments depending on the discrete method.

In the following description of an electron beam exposure method according to an embodiment of the present invention, the present inventors have six subfields in the horizontal and vertical directions of one main field for convenience of illustration. It is assumed that there are three subfields. The location of each subfield is represented by a matrix notation such as (X, Y). For example, a subfield located at (2, 3) refers to a subfield located at 2 rows and 3 columns.

On the other hand, since the number of subfields present in the main field does not affect the technical spirit of the present invention at all, the assumption does not affect the technical spirit of the present invention.

<First Embodiment>

It is characterized by exposing an electron beam while skipping subfields one by one.

In detail, referring to FIG. 2, the sample or photosensitive film 10 to be exposed is divided into first to fourth main fields MF1, MF2, MF3, and MF4. The number of main fields may be larger or smaller depending on the exposure area to be exposed. For example, in the case of an exposure object having a smaller exposure area than the first main field MF1, only the first main field MF1 is sufficient. On the other hand, in the case of an exposure target having a larger exposure area than the first to fourth main fields MF1 to MF4, a larger number of main fields are required than the first to fourth main fields MF1 to MF4. do.

The electron beam exposure processes for the first to fourth main fields MF1... MF4 are performed in the same manner except that only the exposure area is different. Therefore, the description of the exposure process for the second to third main fields MF2, MF3, and MF4 will be replaced with the description of the electron beam exposure process for the first main field MF1.

The photosensitive film 10 is divided into first to fourth main fields MF1 to MF4, and then the first main field MF1 is divided into 36 subfields SF. In Fig. 2, reference numerals R and V denote a group of numbers representing a row of the first main field MF1 and a group of numbers representing a column, respectively. The number marked on each subfield SF in the first main field MF1 indicates the order in which the corresponding subfield is exposed to an electron beam. For example, if the number marked on the subfield SF is "10", the subfield is exposed to the 10th electron beam. Therefore, referring to the arrangement of the numbers marked in the subfield SF, it can be seen in which pattern the electron beam exposure proceeds.

In the electron beam exposure method according to the first embodiment of the present invention (hereinafter, referred to as the first exposure method of the present invention), the electron beam exposure to the first main field MF1 may be a subfield located at (1,1), that is, the first subfield. Start with the field. After performing electron beam exposure to the subfield located at (1,1), the subfield located at (1,2), the second subfield, is skipped, and the subfield located at (1,3), the third sub Electron beam exposure is performed on the field. Next, the subfield located at (1, 4), that is, the fourth subfield, is skipped, and electron beam exposure is performed on the subfield located at (1,5), the fifth subfield. Subsequently, the subfields located at (1,6) are skipped, and electron beam exposure is performed on the subfields located at (2,6). Thereafter, electron beam exposure is performed on the subfields located in the second row in the direction opposite to the electron beam exposure advancing direction for the subfields located in the first row. The electron beam exposure of the subfields located in the second row is also performed while the subfields are skipped one by one as in the electron beam exposure of the subfields located in the first row. Soon after performing electron beam exposure to the subfields located at (2,6), the subfields located at (2,5), (2,3) and (2,1) are skipped, (2,4) and Electron beam exposure to (2, 2) is performed in sequence. Thereafter, the electron beam exposure of the subfields located in the 3rd, 4th, 5th, and 6th rows is also performed in the same manner as the electron beam exposure of the subfields located in the 1st and 2nd rows.

Next, returning to row 1, electron beam exposure is performed on the subfields skipped in the electron beam exposure process among the subfields located in rows 1 to 6. At this time, the sub-field exposed by the electron beam is skipped.

For example, the subfield located at (1, 1) is skipped because it was previously exposed to the electron beam, and the electron beam exposure is performed on the subfield located at (1, 2). For the same reason, the subfields located at (1,3) and (1,5) are skipped, and the subfields located at (1,4) and the subfields located at (1,6) are sequentially subjected to electron beam exposure.

Next, the electron beam exposure for the subfields located in two rows, which were not previously exposed, is performed in a direction opposite to the electron beam exposure direction for one row. Immediately, the subfields located at (2,5) are exposed for the 22nd time, and the subfields located at (2,4) and (2,2) are exposed for the fifth and sixth periods, respectively, and thus skipped (2, 3) and the subfields positioned at (2, 1) are exposed to the 23rd and 24th positions, respectively. Exposure to the previously unexposed subfields of rows 3 to 6 is also performed out of order in the same manner as the exposure of rows 1 and 2.

In this way, the exposure to the first main field MF1 is completed. Subsequently, the second main field MF2 is moved to the position of the first main field MF1 by moving a chuck (not shown), which is movable in the X and Y directions, on which the photosensitive film 10 is placed. The exposure is performed in the same manner as the first main field MF1. Exposure to the third and fourth main fields MF3 and MF4 is also performed in the same manner as the second main field MF2.

The dotted arrows in each row in FIG. 2 indicate the traveling direction of electron beam exposure for each row.

Second Embodiment

Unlike the first exposure method of the present invention described above, it is characterized in that the exposure direction for each row is the same.

Specifically, in the case of the first exposure method of the present invention, the advancing direction of the electron beam exposure for the subfields located in 1, 3, and 5 rows is opposite to the advancing direction of the electron beam exposure for the subfields located in the remaining rows. .

On the other hand, the electron beam exposure method (hereinafter referred to as the second exposure method of the present invention) according to the second embodiment of the present invention is exposed by skipping subfields one by one like the first exposure method of the present invention, the same for all rows Exposure in the direction.

This fact is clarified by referring to the number marked in the subfield SF of FIG. 3.

In other words, after the server fields located at (1,1), (1,3) and (1,5) are sequentially exposed, the second exposure method of the present invention is different from the first exposure method of the present invention in one row. Exposure to two rows is performed in the same manner as that of the exposure progress. Accordingly, in the second exposure method of the present invention, the server field located at (2,2) is exposed for the fourth time, and then the subfields located at (2,4) and (2,6) are fifth and sixth, respectively. It is exposed by. The electron beam exposure progress direction for the third to sixth rows is also the same as the exposure progress direction for the first row.

Referring again to the numbers marked in the subfield SF of FIG. 3, all the moving directions of the electron beam exposure to the subfields of each row, which were skipped without being exposed in the first exposure to the first main field MF1, are also shown. The same thing can be seen.

For example, after subfields located at (1,2), (1,4) and (1,6) skipped without being exposed in the first exposure in row 1, after the 19th, 20th and 21st exposures, respectively, , The second field exposed at (2,1) is exposed for the 22nd time, and the subfields located at (2,3) and (2,5) are 23rd, respectively, without the first exposure in the second row. And the 24th exposure, and the exposure progress direction of the two rows is the same as the exposure progress direction of the one row.

Arrows indicated by dotted lines in each row in FIG. 3 indicate an electron beam exposure progress direction for each row.

It can be seen from the comparison between FIG. 2 and FIG. 3 that the electron beam exposure progress directions for the second row, the fourth row, and the sixth row in the first and second exposure methods of the present invention are opposite to each other.

Third Embodiment

The subfields are randomly selected and exposed while preventing neighboring subfields from being selected and one subfield being duplicated.

In other words, the exposure method (hereinafter referred to as the third exposure method of the present invention) according to the third embodiment of the present invention exposes the first and second exposure methods of the present invention while skipping the subfields one by one, The skipped subfield randomly selects the subfield to be exposed, unlike following a predetermined rule.

This random selection of subfields is possible by generating random numbers through meshing and grouping, and programming the electron beam exposure equipment to expose the subfields corresponding to the random numbers generated. At this time, it is preferable to prevent the subfields from being continuously selected or duplicated, since this is contrary to the spirit of the present invention.

Accordingly, the first subfield exposed in the third exposure method of the present invention may be any one of 36 subfields SF. For example, it may be a subfield located at (1,1), a subfield located at (6,6), or a subfield located at the center.

Specifically, referring to FIG. 4, the third exposure method of the present invention first performs electron beam exposure on a subfield located at (4, 2). Thereafter, the second exposure is performed on the subfield located at (3,4), and the third exposure is performed on the subfield located at (5,2). Subfields subjected to the first to third exposures are randomly selected, and no rule other than a random rule is applied to selecting these subfields. The subfields exposed to the fourth to 36th exposures are similarly selected.

Fourth Example

The electron beam exposure is alternately performed in two rows, but the exposure is performed in an oblique direction.

Specifically, referring to FIG. 5, the electron beam exposure method according to the fourth embodiment of the present invention (hereinafter, the fourth exposure method of the present invention) first includes a subfield located in the first column (1,1) in one row. It exposes. Then, the subfield located in the second column (2,2) of two rows in the diagonal direction with respect to the subfield located in (1,1) is exposed. Subsequently, the subfield located in the third column (1,3) in one row in the diagonal direction with respect to the subfield located in (2,2) is exposed. Next, the subfield located in the fourth column (2,4) in two rows in the diagonal direction with respect to the subfield located in (1,3) is exposed. In this manner, the subfields located at (1,5) and the subfields located at (2,6) are exposed, and the subfields located at rows 3 to 6 are exposed in the same manner. Such an exposure sequence can be clearly understood through the numbers marked in the subfields and the arrows indicated by the dotted lines.

In the case of the fourth exposure method of the present invention shown in Fig. 5, the exposure is always shown starting from the first column of the row, but as in the case of the first exposure method of the present invention, the exposure progress direction for two adjacent rows May be different. For example, in FIG. 5, the exposure progress direction for rows 1 and 2 and the exposure progress direction for rows 3 and 4 may be reversed.

Fifth Embodiment

Unlike the first to fourth exposure methods of the present invention described above, the subfields in the main field are exposed continuously or sequentially, and a time difference is provided between the subfields.

Referring to FIG. 6, the electron beam exposure method according to the fifth embodiment of the present invention (hereinafter, the fifth exposure method of the present invention) is sequentially exposed, as can be seen from the array of numbers marked on each subfield SF. . However, there is a time difference between exposures to two neighboring server fields.

For example, there is a time difference of Δt between the exposure end point for the server field located at (1, 1) and the exposure start point for the server field located at (1, 2). At this time, Δt is much longer than the time difference between two subfields existing in the conventional sequential exposure method.

In FIG. 6, a thick line between subfields of each row symbolically indicates that a time difference such as Δt exists between two neighboring subfields.

By providing a time difference such as Δt between two neighboring subfields, pattern distortion due to an increase in the internal and surface temperatures of the photosensitive film 10 may be alleviated.

As described above, the method of exposing two neighboring subfields with a time difference may also be applied to the first to fourth exposure methods of the present invention.

On the other hand, in the fifth exposure method of the present invention, the exposure progress direction for each row may be reversed as shown in FIG. 6, but may be the same as shown in FIG. 7.

In FIG. 7, a thick line between two neighboring subfields of each row symbolically represents a time difference exposure between two neighboring subfields.

On the other hand, in the electron beam exposure method (hereinafter referred to as the sixth exposure method of the present invention) according to the sixth embodiment of the present invention, when the size of the pattern to be exposed is small or there are many overlapping patterns, the first embodiment of the present invention described above In the fifth to fifth exposure methods, the subfields in the main field may be set as a plurality of independent or overlapping pattern files, and accurate coordinates may be given to each pattern. Then, by specifying the coordinates so as not to overlap randomly or discretely, electron beam exposure for forming a pattern on the designated coordinates can be performed. The result is the same as exposing the subfield corresponding to the pattern file to which the designated coordinates are given.

On the other hand, there may be an exposure method that uses the first to sixth exposure methods of the present invention described above.

For example, the first main field MF1 is exposed by the first or second exposure method of the present invention, and the second main field MF2 is exposed by the third exposure method of the present invention, and the third main field is exposed. The field MF3 is exposed by the fourth exposure method of the present invention. The fourth main field MF4 is exposed by the fifth exposure method of the present invention.

8 is a flowchart showing step-by-step first to fourth exposure methods of the present invention described above.

Referring to FIG. 8, a first step S1 is a step of designing a pattern layout. In other words, the main field is set in the sample or photosensitive film to be exposed, and the subfield is set in the set main field.

The second step S2 is to select a main field to be exposed.

In other words, the main field to be exposed first is selected from the set main fields.

The third step S3 is a step of non-sequentially or discretely selecting subfields to be exposed in the selected main field.

In other words, in the third step S3, the subfields can be skipped one by one as in the first exposure method of the present invention shown in FIG. 2, and are not continuous as in the third exposure method of the present invention shown in FIG. Subfields may be randomly selected within a non-overlapping range, and subfields existing in two rows may be alternately selected as in the fourth exposure method of the present invention illustrated in FIG. 5.

The fourth step S4 is to perform electron beam exposure on the subfield selected in the third step S3.

The fifth step S5 is a step of determining whether or not all subfields in the selected main field are exposed.

If all subfields have been exposed (Y), the process is complete. However, if the unexposed subfield remains in the selected main field (N), the process returns to the third step S3 until the third subfield in the selected main field is exposed until the third step S3 and the fourth step. Repeat (S4).

9 is a flowchart illustrating a fifth exposure method of the present invention step by step.

Referring to FIG. 9, the first step SS1 is a step of designing a pattern layout. In the first step SS1, a main field is set in a sample or a photoresist to be exposed, and a subfield is set for each set main field.

The second step SS2 is a step of selecting a main field to be exposed.

In a third step SS3, time difference exposure is performed on two neighboring subfields of the selected main field. In this case, the time difference is preferably longer than the time difference in the conventional sequential exposure method.

The fourth step SS4 is a step of determining whether or not all subfields in the selected main field are exposed.

If all subfields in the selected main field have been exposed (Y), then the exposure process is terminated, but if there are remaining unexposed subfields (N), the process returns to the third step (SS3) to perform time difference exposure on the unexposed subfields. Continue.

10 is a flowchart illustrating a sixth exposure method of the present invention step by step.

The first step SSS1 is a step of designing a pattern layout, in which a main field is set in a sample or photoresist to be exposed, and a subfield is set in the set main field.

The second step SSS2 selects a main field to be exposed, and selects a main field to be exposed first from the set main fields.

The third step SSS3 is to set subfields of the selected main field as a plurality of independent or overlapping pattern files, and to assign coordinates to each pattern.

The fourth step SSS4 is a step of specifying coordinates discretely or randomly.

The pattern to be exposed is determined by such coordinate designation. Since the pattern corresponds to the subfield soon, the fourth step SSS4 is substantially the same as selecting the subfield to be exposed. Even when the coordinates are randomly assigned, it is desirable to introduce a random function during soft program coding of the electron beam exposure equipment so that random numbers are generated through meshing and grouping in the program so that neighboring coordinates are not specified continuously or the same coordinates are not specified repeatedly. Do.

The fifth step SSS5 is a step of performing exposure for drawing a pattern at the coordinates designated in the fourth step SSS4.

Since the pattern is the same as the subfield, the fifth step SSS5 is the same as exposing the subfield.

The sixth step SSS6 is a step of determining whether or not all the patterns are exposed.

That is, as a step of determining whether the exposure for drawing all the patterns at the designated coordinates is completed, if all the patterns have been drawn at the designated coordinates (Y), the process ends. Otherwise (N), the process returns to the fourth step SSS4 to repeat the fourth step SSS4 and the fifth step SSS5 until all the patterns are drawn at the designated coordinates.

While many details are set forth in the foregoing description, they should be construed as illustrative of preferred embodiments, rather than to limit the scope of the invention. For example, one of ordinary skill in the art may divide a plurality of subfields in a main field into several groups, and expose each group by a different exposure method. Also, an exposure method in which two neighboring subfields are sequentially exposed and the next one or two subfields are skipped may be considered. Further, instead of row based, electron beam exposure may be performed based on column. Therefore, the scope of the present invention should not be defined by the described embodiments, but should be determined by the technical spirit described in the claims.

As described above, the electron beam exposure method according to the present invention randomly exposes subfields under the condition that the subfields are discretely exposed or the subfields are not continuous and do not overlap. In addition, the electron beam exposure method according to the present invention exposes the sub-fields sequentially, but exposes the two sub-fields with a longer time difference than conventional ones. Therefore, by using the electron beam exposure method according to the present invention, it is possible to improve the proximity effect and heat generation problems caused by scattering of electrons when the photosensitive film is patterned using the electron beam. As a result, the accuracy and precision of the first designed pattern and the pattern obtained after exposure can be improved. And since the electron beam exposure method of the present invention is not limited to specific equipment, the electron beam exposure method of the present invention can be applied to all electron beam exposure equipment. In addition, fine, dense and repeated complex patterns can be accurately patterned without distortion, thereby realizing various types of fine patterns.

Claims (17)

A first step of setting a main field in an exposure area of an electron beam exposure target and a plurality of subfields in the main field; A second step of selecting a main field to be exposed; Selecting at least one subfield from the selected main field; A fourth step of performing electron beam exposure on the selected subfield; And And a fifth step of performing electron beam exposure by selecting at least one other subfield not exposed to the selected subfield and not being exposed to the selected subfield. The electron beam exposure method according to claim 1, wherein the third to fifth steps are repeated until the electron beam exposure of all the subfields of the selected main field is completed. 2. The electron beam exposure method of claim 1, wherein the neighboring two subfields are selected in the third step. 2. The electron beam exposure method of claim 1, wherein in the fifth step, another subfield located at a position spaced apart from the selected subfield by at least one subfield is selected. The electron beam exposure method according to claim 1, wherein the subfield located in the diagonal direction of the selected subfield is selected in the fifth step. The method of claim 1, wherein the plurality of subfields form a matrix, and the electron beam exposure for each row proceeds in the same direction. The method of claim 1, wherein the plurality of subfields form a matrix, and electron beam exposure of two adjacent rows is performed in an opposite direction. The method of claim 1, wherein the plurality of subfields form a matrix, and electron beam exposure of two adjacent rows is alternately performed. The electron beam exposure method according to claim 1, wherein an electron beam exposure is sequentially performed on a part of the plurality of subfields. 2. The electron beam exposure method of claim 1, wherein in the fifth step, the other subfields are randomly selected from the plurality of subfields. A first step of setting a main field in an exposure area of an electron beam exposure target and a plurality of subfields in the main field; And And exposing at least some of the subfields sequentially among the plurality of subfields, and exposing the adjacent subfields with a time difference longer than an inherent time difference (hereinafter, referred to as an intrinsic time difference) between two adjacent subfields. An electron beam exposure method. The electron beam exposure method of claim 11, wherein the subfields of some of the sequentially exposed subfields are exposed at a time difference equal to the inherent time difference. 12. The electron beam exposure method of claim 11, wherein some subfields of the plurality of subfields are exposed out of sequence. A first step of setting a main field in an exposure area of an electron beam exposure target and a plurality of subfields in the main field; A second step of setting the plurality of subfields as a plurality of independent or duplicated pattern files, and giving coordinates to each pattern; And And a third step of arbitrarily designating coordinates among the given coordinates, and performing electron beam exposure on the designated coordinates to form a pattern corresponding to the arbitrarily designated coordinates. 15. The method of claim 14, further comprising: a fourth step of designating other coordinates discrete and non-overlapping with the arbitrarily designated coordinates among the given coordinates; A fifth step of performing an electron beam exposure to the designated other coordinates to form a pattern corresponding to the other coordinates; And And a sixth step of repeating the third to fifth steps until all of the plurality of subfields are exposed. 15. The electron beam exposure method according to claim 14, wherein some subfields of the plurality of subfields are sequentially exposed. 15. The electron beam exposure method according to claim 14, wherein some subfields of the plurality of subfields are subjected to discrete and non-overlapping exposure without a pattern file.

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