KR100315607B1 - 전위 발생 회로의 출력 전위가 목표 전위에 도달하는지의 여부를 검출하기 위한 전위 검출 회로 - Google Patents

전위 발생 회로의 출력 전위가 목표 전위에 도달하는지의 여부를 검출하기 위한 전위 검출 회로 Download PDF

Info

Publication number
KR100315607B1
KR100315607B1 KR1019990005321A KR19990005321A KR100315607B1 KR 100315607 B1 KR100315607 B1 KR 100315607B1 KR 1019990005321 A KR1019990005321 A KR 1019990005321A KR 19990005321 A KR19990005321 A KR 19990005321A KR 100315607 B1 KR100315607 B1 KR 100315607B1
Authority
KR
South Korea
Prior art keywords
potential
circuit
channel mos
high voltage
mos transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019990005321A
Other languages
English (en)
Korean (ko)
Other versions
KR20000011175A (ko
Inventor
미하라마사아끼
Original Assignee
다니구찌 이찌로오, 기타오카 다카시
미쓰비시덴키 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 다니구찌 이찌로오, 기타오카 다카시, 미쓰비시덴키 가부시키가이샤 filed Critical 다니구찌 이찌로오, 기타오카 다카시
Publication of KR20000011175A publication Critical patent/KR20000011175A/ko
Application granted granted Critical
Publication of KR100315607B1 publication Critical patent/KR100315607B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/153—Arrangements in which a pulse is delivered at the instant when a predetermined characteristic of an input signal is present or at a fixed time interval after this instant
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied
    • H03K17/223—Modifications for ensuring a predetermined initial state when the supply voltage has been applied in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/30—Modifications for providing a predetermined threshold before switching
    • H03K17/302—Modifications for providing a predetermined threshold before switching in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/22—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral
    • H03K5/24—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
    • H03K5/2472—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using field effect transistors
    • H03K5/2481—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using field effect transistors with at least one differential stage

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Dram (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Control Of Voltage And Current In General (AREA)
KR1019990005321A 1998-07-01 1999-02-13 전위 발생 회로의 출력 전위가 목표 전위에 도달하는지의 여부를 검출하기 위한 전위 검출 회로 Expired - Fee Related KR100315607B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP18614798A JP2000019200A (ja) 1998-07-01 1998-07-01 電位検出回路
JP1998-186147 1998-07-01

Publications (2)

Publication Number Publication Date
KR20000011175A KR20000011175A (ko) 2000-02-25
KR100315607B1 true KR100315607B1 (ko) 2001-12-12

Family

ID=16183212

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019990005321A Expired - Fee Related KR100315607B1 (ko) 1998-07-01 1999-02-13 전위 발생 회로의 출력 전위가 목표 전위에 도달하는지의 여부를 검출하기 위한 전위 검출 회로

Country Status (4)

Country Link
US (1) US6281716B1 (https=)
JP (1) JP2000019200A (https=)
KR (1) KR100315607B1 (https=)
TW (1) TW454089B (https=)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5102413B2 (ja) * 2000-07-12 2012-12-19 ユナイテッド・マイクロエレクトロニクス・コーポレイション 第１の電源電圧から第２の電源電圧を生成する装置、基準電圧発生器、ならびに、所望の電圧を生成するための方法および装置
JP4748841B2 (ja) * 2000-10-24 2011-08-17 ルネサスエレクトロニクス株式会社 半導体装置
US6438032B1 (en) * 2001-03-27 2002-08-20 Micron Telecommunications, Inc. Non-volatile memory with peak current noise reduction
KR100675273B1 (ko) * 2001-05-17 2007-01-26 삼성전자주식회사 반도체 메모리 장치 및 이 장치의 전압 레벨 및 지연 시간 조절회로
JP4492003B2 (ja) * 2001-08-02 2010-06-30 富士電機システムズ株式会社 電流検出回路
JP2003086700A (ja) 2001-09-14 2003-03-20 Mitsubishi Electric Corp 半導体装置
JP2003203488A (ja) 2001-12-28 2003-07-18 Mitsubishi Electric Corp 不揮発性半導体メモリ
JP2003207527A (ja) 2002-01-15 2003-07-25 Mitsubishi Electric Corp 高電圧検出回路
US7941675B2 (en) * 2002-12-31 2011-05-10 Burr James B Adaptive power control
US7180322B1 (en) 2002-04-16 2007-02-20 Transmeta Corporation Closed loop feedback control of integrated circuits
US7953990B2 (en) 2002-12-31 2011-05-31 Stewart Thomas E Adaptive power control based on post package characterization of integrated circuits
US7228242B2 (en) 2002-12-31 2007-06-05 Transmeta Corporation Adaptive power control based on pre package characterization of integrated circuits
KR100498505B1 (ko) * 2003-07-15 2005-07-01 삼성전자주식회사 승압전압 발생회로 및 승압전압 발생방법
KR100566302B1 (ko) * 2003-10-31 2006-03-30 주식회사 하이닉스반도체 파워업 신호 발생 장치
US7129771B1 (en) 2003-12-23 2006-10-31 Transmeta Corporation Servo loop for well bias voltage source
US7692477B1 (en) 2003-12-23 2010-04-06 Tien-Min Chen Precise control component for a substrate potential regulation circuit
US7012461B1 (en) * 2003-12-23 2006-03-14 Transmeta Corporation Stabilization component for a substrate potential regulation circuit
US7649402B1 (en) 2003-12-23 2010-01-19 Tien-Min Chen Feedback-controlled body-bias voltage source
JP4427365B2 (ja) * 2004-03-19 2010-03-03 株式会社東芝 半導体記憶装置
US7774625B1 (en) 2004-06-22 2010-08-10 Eric Chien-Li Sheng Adaptive voltage control by accessing information stored within and specific to a microprocessor
US7562233B1 (en) 2004-06-22 2009-07-14 Transmeta Corporation Adaptive control of operating and body bias voltages
CN101053155A (zh) * 2004-09-02 2007-10-10 皇家飞利浦电子股份有限公司 比较两个电源电压的装置和方法
WO2008047416A1 (fr) * 2006-10-18 2008-04-24 Spansion Llc Circuit de détection de tension
US8316158B1 (en) * 2007-03-12 2012-11-20 Cypress Semiconductor Corporation Configuration of programmable device using a DMA controller
US8060661B1 (en) 2007-03-27 2011-11-15 Cypress Semiconductor Corporation Interface circuit and method for programming or communicating with an integrated circuit via a power supply pin
JP4660526B2 (ja) * 2007-09-21 2011-03-30 株式会社東芝 負電圧検知回路を備えた半導体集積回路
JP5283078B2 (ja) * 2009-01-13 2013-09-04 セイコーインスツル株式会社 検出回路及びセンサ装置
JP5318676B2 (ja) * 2009-06-25 2013-10-16 ルネサスエレクトロニクス株式会社 半導体装置
JP5482126B2 (ja) * 2009-11-13 2014-04-23 ミツミ電機株式会社 参照電圧発生回路および受信回路
JP2011203112A (ja) * 2010-03-25 2011-10-13 Toshiba Corp 電流検出回路
KR101094401B1 (ko) * 2010-03-31 2011-12-15 주식회사 하이닉스반도체 반도체 집적회로의 내부전압 발생기
CN102545599B (zh) * 2010-12-07 2015-08-19 北大方正集团有限公司 开关稳压电源及其稳压方法
US8570077B2 (en) * 2010-12-17 2013-10-29 Qualcomm Incorporated Methods and implementation of low-power power-on control circuits
CN102882366B (zh) * 2012-09-06 2015-06-17 海能达通信股份有限公司 一种纹波电源装置及其提供带纹波的直流电压的方法
JP6321411B2 (ja) * 2014-03-13 2018-05-09 エイブリック株式会社 電圧検出回路
US12040705B2 (en) * 2021-08-20 2024-07-16 Semiconductor Components Industries, Llc Self clocked low power doubling charge pump

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2020437B (en) * 1978-04-14 1982-08-04 Seiko Instr & Electronics Voltage detecting circuit
JPH03261871A (ja) 1990-03-12 1991-11-21 Fujitsu Ltd 電流測定装置
US5166549A (en) * 1991-08-07 1992-11-24 General Electric Company Zero-voltage crossing detector for soft-switching devices
JP2761687B2 (ja) * 1991-12-19 1998-06-04 三菱電機株式会社 電圧レベル検出回路
JPH07229932A (ja) * 1994-02-17 1995-08-29 Toshiba Corp 電位検知回路
JP3626521B2 (ja) 1994-02-28 2005-03-09 三菱電機株式会社 基準電位発生回路、電位検出回路および半導体集積回路装置
JP3597281B2 (ja) * 1995-11-28 2004-12-02 株式会社ルネサステクノロジ 電位検出回路及び半導体集積回路
JP3676904B2 (ja) * 1997-04-11 2005-07-27 株式会社ルネサステクノロジ 半導体集積回路
US5942921A (en) * 1997-12-19 1999-08-24 Advanced Micro Devices, Inc. Differential comparator with an extended input range

Also Published As

Publication number Publication date
JP2000019200A (ja) 2000-01-21
US6281716B1 (en) 2001-08-28
KR20000011175A (ko) 2000-02-25
TW454089B (en) 2001-09-11

Similar Documents

Publication Publication Date Title
KR100315607B1 (ko) 전위 발생 회로의 출력 전위가 목표 전위에 도달하는지의 여부를 검출하기 위한 전위 검출 회로
JP2732826B2 (ja) 不揮発性半導体メモリ装置とそのワードライン駆動方法
US6600692B2 (en) Semiconductor device with a voltage regulator
KR0159455B1 (ko) 반도체 집적회로장치
US5568419A (en) Non-volatile semiconductor memory device and data erasing method therefor
KR100731237B1 (ko) 불휘발성 반도체 기억 장치
US5870335A (en) Precision programming of nonvolatile memory cells
EP0713164B1 (en) A reference circuit
KR100829790B1 (ko) 플래시 메모리 장치 및 플래시 메모리 장치의 데이터 독출방법
KR100366011B1 (ko) 제어된 셀 임계 전압 분포를 갖는 불휘발성 반도체 기억장치
KR19980024028A (ko) 불휘발성 반도체 기억장치
WO2001099114A1 (en) Reference cell for high speed sensing in non-volatile memories
US20030107919A1 (en) Nonvolatile semiconductor memory and method for controlling programming voltage of nonvolatile semiconductor memory
US9263145B2 (en) Current detection circuit and semiconductor memory apparatus
US5828604A (en) Non-volatile semiconductor memory device having large margin of readout operation for variation in external power supply voltage
JPH07122080A (ja) 半導体不揮発性記憶装置
KR100281668B1 (ko) 멀티레벨정보를저장할수있는메모리셀을구비한비휘발성반도체메모리장치및데이터기입방법
KR100502132B1 (ko) 데이터 재기입이 고속인 불휘발성 반도체 기억 장치
KR20050032124A (ko) 기억 장치내에 과소거된 비트를 복구하는 방법
KR100725373B1 (ko) 플래쉬 메모리 장치
KR100708914B1 (ko) 칩 전체를 통한 플래시 메모리 워드라인 트래킹
KR20030019854A (ko) 메모리 셀 트랜지스터의 임계값 편차의 영향을 억제할 수있는 비휘발성 반도체 기억 장치
KR20090123506A (ko) 전압 생성회로 및 이를 구비한 불휘발성 메모리 소자
KR100389173B1 (ko) 임계값 전위의 변경이 가능한 인버터
JP3294153B2 (ja) 半導体メモリ

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

FPAY Annual fee payment

Payment date: 20111019

Year of fee payment: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

FPAY Annual fee payment

Payment date: 20121023

Year of fee payment: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20131113

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20131113