KR100280610B1 - 탄성표면파장치 - Google Patents
탄성표면파장치 Download PDFInfo
- Publication number
- KR100280610B1 KR100280610B1 KR1019980005344A KR19980005344A KR100280610B1 KR 100280610 B1 KR100280610 B1 KR 100280610B1 KR 1019980005344 A KR1019980005344 A KR 1019980005344A KR 19980005344 A KR19980005344 A KR 19980005344A KR 100280610 B1 KR100280610 B1 KR 100280610B1
- Authority
- KR
- South Korea
- Prior art keywords
- surface acoustic
- acoustic wave
- wave device
- angle
- film thickness
- Prior art date
Links
- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 74
- 239000010453 quartz Substances 0.000 claims abstract description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 27
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 23
- 239000010937 tungsten Substances 0.000 claims abstract description 23
- 229910052715 tantalum Inorganic materials 0.000 claims description 23
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 23
- 239000013078 crystal Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 5
- 239000010408 film Substances 0.000 description 34
- 239000010409 thin film Substances 0.000 description 18
- 230000008878 coupling Effects 0.000 description 13
- 238000010168 coupling process Methods 0.000 description 13
- 238000005859 coupling reaction Methods 0.000 description 13
- 230000003111 delayed effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02637—Details concerning reflective or coupling arrays
- H03H9/02669—Edge reflection structures, i.e. resonating structures without metallic reflectors, e.g. Bleustein-Gulyaev-Shimizu [BGS], shear horizontal [SH], shear transverse [ST], Love waves devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02551—Characteristics of substrate, e.g. cutting angles of quartz substrates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6423—Means for obtaining a particular transfer characteristic
- H03H9/6433—Coupled resonator filters
- H03H9/644—Coupled resonator filters having two acoustic tracks
- H03H9/6456—Coupled resonator filters having two acoustic tracks being electrically coupled
- H03H9/6459—Coupled resonator filters having two acoustic tracks being electrically coupled via one connecting electrode
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H9/02259—Driving or detection means
- H03H9/02275—Comb electrodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
Claims (8)
- 오일러(Euler) 각이 (0, θ, ψ) (여기에서, θ는 약 125。<θ<130。 범위 내에 있는 각도이며, ψ는 약 90。의 각도이다)로 표현된 수정 회전 Y-컷(cut)판; 및상기한 수정 회전 Y-컷판 상에 배치되며 텅스턴으로 구성된 적어도 하나의 인터디지탈 트랜스듀서(interdigital transducer)를 포함함을 특징으로 하는 탄성 표면파 장치.
- 제 1항에 있어서, 상기한 인터디지탈 트랜스듀서는, 규격화막 두께 h/λ가 약 0.0075<h/λ≤0.027(여기에서, h는 인터디지탈 트랜스듀서의 막 두께이며, λ는 수정 회전 Y-컷판 상에서 여진되는 탄성 표면파의 파장이다)의 범위 내에 있음을 특징으로 하는 탄성 표면파 장치.
- 제 2항에 있어서, 상기한 각도 θ와 상기한 규격화막 두께 h/λ가 하기의 수학식 5;
θ = 122.15+376.93×(h/λ)+978.89×(h/λ)2±0.5 을 만족함을 특징으로 하는 탄성 표면파 장치. - 제 1항에 있어서, 상기한 탄성 표면파 장치가 전단 수평(shear horizontal: SH)형 표면파를 이용한 기판 모서리 반사형의 탄성 표면파 장치임을 특징으로 하는 탄성 표면파 장치.
- 오일러 각이 (0, θ, ψ) (여기에서, θ는 약 125。<θ<130。 범위 내에 있는 각도이며, ψ는 약 90。의 각도이다)로 표현된 수정 회전 Y-컷판; 및상기한 수정 회전 Y-컷판 상에 배치되며 탄탈로 구성된 적어도 하나의 인터디지탈 트랜스듀서를 포함함을 특징으로 하는 탄성 표면파 장치.
- 제 5항에 있어서, 상기한 인터디지탈 트랜스듀서는, 규격화막 두께 h/λ가 약 0.006<h/λ≤0.031(여기에서, h는 인터디지탈 트랜스듀서의 막 두께이며, λ는 수정 회전 Y-컷판 상에서 여진되는 탄성 표면파의 파장이다)의 범위 내에 있음을 특징으로 하는 탄성 표면파 장치.
- 제 6항에 있어서, 상기한 각도 θ와 상기한 규격화막 두께 h/λ가 하기의 수학식 6;
θ = 122.4917 + 292.145 ×(h/λ) 을 만족함을 특징으로 하는 탄성 표면파 장치. - 제 5항에 있어서, 상기한 탄성 표면파 장치가 SH형 표면파를 이용한 기판 모서리 반사형의 탄성 표면파 장치임을 특징으로 하는 탄성 표면파 장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9-36001 | 1997-02-20 | ||
JP03600197A JP3339350B2 (ja) | 1997-02-20 | 1997-02-20 | 弾性表面波装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR19980071551A KR19980071551A (ko) | 1998-10-26 |
KR100280610B1 true KR100280610B1 (ko) | 2001-02-01 |
Family
ID=12457558
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019980005344A KR100280610B1 (ko) | 1997-02-20 | 1998-02-20 | 탄성표면파장치 |
Country Status (6)
Country | Link |
---|---|
US (2) | US5953433A (ko) |
EP (1) | EP0860943B1 (ko) |
JP (1) | JP3339350B2 (ko) |
KR (1) | KR100280610B1 (ko) |
CN (1) | CN1135696C (ko) |
DE (1) | DE69814205T2 (ko) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1999004488A1 (en) * | 1997-07-16 | 1999-01-28 | Sawtek Inc. | An optimal cut for saw devices on quartz |
JP3301399B2 (ja) * | 1998-02-16 | 2002-07-15 | 株式会社村田製作所 | 弾性表面波装置 |
FR2785473B1 (fr) * | 1998-10-30 | 2001-01-26 | Thomson Csf | Filtre faibles pertes a ondes acoustiques de surface sur substrat de quartz de coupe optimisee |
JP3724544B2 (ja) * | 1999-03-11 | 2005-12-07 | 株式会社村田製作所 | 表面波共振子、表面波フィルタ、共用器、通信機装置及び表面波デバイス |
JP3353742B2 (ja) * | 1999-05-07 | 2002-12-03 | 株式会社村田製作所 | 表面波共振子、表面波装置、通信機装置 |
JP3568025B2 (ja) * | 1999-05-14 | 2004-09-22 | 株式会社村田製作所 | 表面波装置及び通信機装置 |
TW465179B (en) * | 1999-05-27 | 2001-11-21 | Murata Manufacturing Co | Surface acoustic wave device and method of producing the same |
JP3376969B2 (ja) * | 1999-09-02 | 2003-02-17 | 株式会社村田製作所 | 弾性表面波装置及びその製造方法 |
JP3391309B2 (ja) * | 1999-09-02 | 2003-03-31 | 株式会社村田製作所 | 表面波装置及び通信機装置 |
US6625855B1 (en) * | 1999-10-06 | 2003-09-30 | Murata Manufacturing Co., Ltd. | Method for producing surface acoustic wave device |
JP2001267355A (ja) * | 2000-03-17 | 2001-09-28 | Murata Mfg Co Ltd | ワイヤボンディング方法およびこのワイヤボンディング方法を用いた弾性表面波装置 |
JP3402311B2 (ja) * | 2000-05-19 | 2003-05-06 | 株式会社村田製作所 | 弾性表面波装置 |
JP3414371B2 (ja) | 2000-07-31 | 2003-06-09 | 株式会社村田製作所 | 弾性表面波装置及びその製造方法 |
JP3435638B2 (ja) | 2000-10-27 | 2003-08-11 | 株式会社村田製作所 | 弾性表面波装置及びその製造方法 |
JP3918497B2 (ja) * | 2000-11-02 | 2007-05-23 | 株式会社村田製作所 | 端面反射型表面波装置 |
JP3897229B2 (ja) * | 2001-04-27 | 2007-03-22 | 株式会社村田製作所 | 表面波フィルタ |
JP2002330052A (ja) * | 2001-04-27 | 2002-11-15 | Murata Mfg Co Ltd | 表面波装置及びそれを用いた弾性表面波デバイス |
US20030006092A1 (en) * | 2001-06-27 | 2003-01-09 | Rpg Diffusor Systems, Inc. | Sound diffuser with low frequency sound absorption |
JP3760378B2 (ja) * | 2001-09-14 | 2006-03-29 | 株式会社村田製作所 | 端面反射型表面波装置及びその製造方法 |
JP3744479B2 (ja) * | 2001-09-28 | 2006-02-08 | 株式会社村田製作所 | 表面波装置及び通信機 |
JP4158650B2 (ja) * | 2003-08-20 | 2008-10-01 | セイコーエプソン株式会社 | 弾性表面波デバイス及びその製造方法 |
CN1612471A (zh) * | 2003-10-30 | 2005-05-04 | 精工爱普生株式会社 | 弹性表面波元件和电子机器 |
FR2864618B1 (fr) * | 2003-12-24 | 2006-03-03 | Temex Sa | Capteur de temperature ou de temperature et de pression interrogeable a distance |
US7002418B2 (en) * | 2004-05-07 | 2006-02-21 | Lattice Semiconductor Corporation | Control signal generation for a low jitter switched-capacitor frequency synthesizer |
JP4148220B2 (ja) * | 2005-01-06 | 2008-09-10 | エプソントヨコム株式会社 | 弾性表面波デバイス、複合デバイス、発振回路およびモジュール |
JP4306668B2 (ja) | 2005-01-07 | 2009-08-05 | セイコーエプソン株式会社 | ラム波型高周波共振子 |
JP2007202087A (ja) | 2005-05-11 | 2007-08-09 | Seiko Epson Corp | ラム波型高周波デバイス |
DE102005055870A1 (de) * | 2005-11-23 | 2007-05-24 | Epcos Ag | Elektroakustisches Bauelement |
JP4315174B2 (ja) | 2006-02-16 | 2009-08-19 | セイコーエプソン株式会社 | ラム波型高周波デバイスの製造方法 |
JP5924861B2 (ja) * | 2010-12-14 | 2016-05-25 | 株式会社村田製作所 | 弾性表面波装置及び磁気センサ |
WO2019044310A1 (ja) * | 2017-08-31 | 2019-03-07 | 株式会社村田製作所 | 弾性波装置およびそれを備えた弾性波モジュール |
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GB1451326A (en) * | 1973-02-16 | 1976-09-29 | Nat Res Dev | Acoustic wave devices |
JPS55105425A (en) * | 1979-02-06 | 1980-08-13 | Fujitsu Ltd | Elastic surface wave device |
US4232240A (en) * | 1979-05-31 | 1980-11-04 | The United States Of America As Represented By The Secretary Of The Air Force | High piezoelectric coupling X-cuts of lead potassium niobate, Pb2 Knb5 O15 , for surface acoustic wave applications |
US4224548A (en) * | 1979-05-31 | 1980-09-23 | The United States Of America As Represented By The Secretary Of The Air Force | Singly rotated cut of Y-axis boule lead potassium niobate, Pb2 KNb.sub. O15, for surface acoustic wave applications |
US4224549A (en) * | 1979-05-31 | 1980-09-23 | The United States Of America As Represented By The Secretary Of The Air Force | Lead potassium niobate substrate member for surface acoustic wave applications |
JPS595722A (ja) * | 1982-06-30 | 1984-01-12 | Murata Mfg Co Ltd | 酸化亜鉛薄膜の電極構造 |
US4515667A (en) * | 1983-07-19 | 1985-05-07 | The Standard Oil Company | Novel catalysts and processes for the photochemical decarboxylation of alpha-hydroxy carboxylic acids |
DE3428876A1 (de) * | 1984-08-04 | 1986-02-13 | Rotzler GmbH + Co Spezialfabrik für Seilwinden und Hebezeuge, 7853 Steinen | Durchlaufwinde |
JPS61195013A (ja) * | 1985-02-25 | 1986-08-29 | Yasuhiko Nakagawa | 零温度係数をもつ弾性表面波材料 |
WO1994022274A1 (en) * | 1993-03-23 | 1994-09-29 | Joseph Francis Hayes | Acoustic reflector |
JP3255502B2 (ja) * | 1993-07-26 | 2002-02-12 | 東洋通信機株式会社 | 高安定弾性表面波素子 |
US5684884A (en) * | 1994-05-31 | 1997-11-04 | Hitachi Metals, Ltd. | Piezoelectric loudspeaker and a method for manufacturing the same |
JP3173300B2 (ja) * | 1994-10-19 | 2001-06-04 | 株式会社村田製作所 | ラブ波デバイス |
JP3317095B2 (ja) * | 1995-06-30 | 2002-08-19 | 株式会社村田製作所 | 圧電共振子及びこの圧電共振子を用いた圧電部品 |
-
1997
- 1997-02-20 JP JP03600197A patent/JP3339350B2/ja not_active Expired - Lifetime
-
1998
- 1998-01-28 US US09/038,716 patent/US5953433A/en not_active Expired - Lifetime
- 1998-02-19 DE DE69814205T patent/DE69814205T2/de not_active Expired - Lifetime
- 1998-02-19 EP EP98400394A patent/EP0860943B1/en not_active Expired - Lifetime
- 1998-02-20 KR KR1019980005344A patent/KR100280610B1/ko not_active IP Right Cessation
- 1998-02-20 CN CNB981052096A patent/CN1135696C/zh not_active Expired - Lifetime
-
1999
- 1999-07-06 US US09/348,108 patent/US6088462A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69814205D1 (de) | 2003-06-12 |
US5953433A (en) | 1999-09-14 |
EP0860943A3 (en) | 2000-01-19 |
DE69814205T2 (de) | 2004-04-01 |
CN1193220A (zh) | 1998-09-16 |
JP3339350B2 (ja) | 2002-10-28 |
EP0860943B1 (en) | 2003-05-07 |
KR19980071551A (ko) | 1998-10-26 |
EP0860943A2 (en) | 1998-08-26 |
JPH10233645A (ja) | 1998-09-02 |
US6088462A (en) | 2000-07-11 |
CN1135696C (zh) | 2004-01-21 |
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