KR0185461B1 - 폴리사이드 구조의 전극을 갖는 반도체장치 및 그 제조방법 - Google Patents

폴리사이드 구조의 전극을 갖는 반도체장치 및 그 제조방법 Download PDF

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Publication number
KR0185461B1
KR0185461B1 KR1019950005041A KR19950005041A KR0185461B1 KR 0185461 B1 KR0185461 B1 KR 0185461B1 KR 1019950005041 A KR1019950005041 A KR 1019950005041A KR 19950005041 A KR19950005041 A KR 19950005041A KR 0185461 B1 KR0185461 B1 KR 0185461B1
Authority
KR
South Korea
Prior art keywords
layer
silicon
tungsten silicide
tungsten
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019950005041A
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English (en)
Korean (ko)
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KR950028175A (ko
Inventor
히로유끼 오오타
Original Assignee
세끼자와 다다시
후지쓰 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 세끼자와 다다시, 후지쓰 가부시끼가이샤 filed Critical 세끼자와 다다시
Publication of KR950028175A publication Critical patent/KR950028175A/ko
Application granted granted Critical
Publication of KR0185461B1 publication Critical patent/KR0185461B1/ko
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Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H10D64/662—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures
    • H10D64/663—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures the additional layers comprising a silicide layer contacting the layer of silicon, e.g. polycide gates

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1019950005041A 1994-03-17 1995-03-11 폴리사이드 구조의 전극을 갖는 반도체장치 및 그 제조방법 Expired - Fee Related KR0185461B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP6046674A JPH07263674A (ja) 1994-03-17 1994-03-17 電界効果型半導体装置とその製造方法
JP94-046674 1994-03-17

Publications (2)

Publication Number Publication Date
KR950028175A KR950028175A (ko) 1995-10-18
KR0185461B1 true KR0185461B1 (ko) 1999-03-20

Family

ID=12753928

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950005041A Expired - Fee Related KR0185461B1 (ko) 1994-03-17 1995-03-11 폴리사이드 구조의 전극을 갖는 반도체장치 및 그 제조방법

Country Status (3)

Country Link
JP (1) JPH07263674A (OSRAM)
KR (1) KR0185461B1 (OSRAM)
TW (1) TW270233B (OSRAM)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5958508A (en) * 1997-03-31 1999-09-28 Motorlola, Inc. Process for forming a semiconductor device
JPH10308454A (ja) * 1997-05-02 1998-11-17 Mitsubishi Electric Corp 半導体装置およびその製造方法
US6277744B1 (en) 2000-01-21 2001-08-21 Advanced Micro Devices, Inc. Two-level silane nucleation for blanket tungsten deposition
US6284636B1 (en) 2000-01-21 2001-09-04 Advanced Micro Devices, Inc. Tungsten gate method and apparatus
US6274472B1 (en) 2000-01-21 2001-08-14 Advanced Micro Devices, Inc. Tungsten interconnect method
KR100745604B1 (ko) * 2006-07-03 2007-08-02 삼성전자주식회사 반도체 소자 및 그 형성 방법

Also Published As

Publication number Publication date
JPH07263674A (ja) 1995-10-13
TW270233B (OSRAM) 1996-02-11
KR950028175A (ko) 1995-10-18

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