KR0164385B1 - 센스앰프회로 - Google Patents

센스앰프회로 Download PDF

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Publication number
KR0164385B1
KR0164385B1 KR1019950012691A KR19950012691A KR0164385B1 KR 0164385 B1 KR0164385 B1 KR 0164385B1 KR 1019950012691 A KR1019950012691 A KR 1019950012691A KR 19950012691 A KR19950012691 A KR 19950012691A KR 0164385 B1 KR0164385 B1 KR 0164385B1
Authority
KR
South Korea
Prior art keywords
channel
transistor
voltage
sense amplifier
output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019950012691A
Other languages
English (en)
Korean (ko)
Other versions
KR960042742A (ko
Inventor
정태성
박정훈
Original Assignee
김광호
삼성전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자주식회사 filed Critical 김광호
Priority to KR1019950012691A priority Critical patent/KR0164385B1/ko
Priority to TW085105824A priority patent/TW305045B/zh
Priority to JP12344696A priority patent/JP2846850B2/ja
Priority to US08/650,399 priority patent/US5796273A/en
Priority to EP96107977A priority patent/EP0744753A3/en
Priority to CN96106631A priority patent/CN1067174C/zh
Publication of KR960042742A publication Critical patent/KR960042742A/ko
Application granted granted Critical
Publication of KR0164385B1 publication Critical patent/KR0164385B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dram (AREA)
  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)
  • Amplifiers (AREA)
KR1019950012691A 1995-05-20 1995-05-20 센스앰프회로 Expired - Fee Related KR0164385B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1019950012691A KR0164385B1 (ko) 1995-05-20 1995-05-20 센스앰프회로
TW085105824A TW305045B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1995-05-20 1996-05-16
JP12344696A JP2846850B2 (ja) 1995-05-20 1996-05-17 センスアンプ回路
US08/650,399 US5796273A (en) 1995-05-20 1996-05-20 Sense amplifier for semiconductor memory device
EP96107977A EP0744753A3 (en) 1995-05-20 1996-05-20 Sensing amplifier
CN96106631A CN1067174C (zh) 1995-05-20 1996-05-20 用于半导体存贮器件的传感放大器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950012691A KR0164385B1 (ko) 1995-05-20 1995-05-20 센스앰프회로

Publications (2)

Publication Number Publication Date
KR960042742A KR960042742A (ko) 1996-12-21
KR0164385B1 true KR0164385B1 (ko) 1999-02-18

Family

ID=19415008

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950012691A Expired - Fee Related KR0164385B1 (ko) 1995-05-20 1995-05-20 센스앰프회로

Country Status (6)

Country Link
US (1) US5796273A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP0744753A3 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JP2846850B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR0164385B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CN (1) CN1067174C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
TW (1) TW305045B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3597655B2 (ja) * 1996-04-17 2004-12-08 株式会社ルネサステクノロジ 半導体集積回路
US6037890A (en) * 1997-09-30 2000-03-14 Intel Corporation Ultra high speed, low power, flash A/D converter utilizing a current mode regenerative comparator
US5963060A (en) * 1997-10-07 1999-10-05 Intel Corporation Latching sense amplifier
JP3558844B2 (ja) * 1997-11-28 2004-08-25 シャープ株式会社 センスアンプ回路
US6414520B1 (en) * 1999-02-01 2002-07-02 Compaq Information Technologies Group, L.P. Universal CMOS single input, low swing sense amplifier without reference voltage
US6816554B1 (en) 1999-07-12 2004-11-09 Intel Corporation Communication bus for low voltage swing data signals
US6456121B2 (en) 1999-07-12 2002-09-24 Intel Corporation Sense amplifier for integrated circuits using PMOS transistors
US6255861B1 (en) * 1999-07-12 2001-07-03 Intel Corporation Hybrid low voltage swing sense amplifier
KR100370240B1 (ko) * 2000-10-31 2003-02-05 삼성전자 주식회사 안정도와 증폭도 개선을 위한 반도체 메모리 장치의 전류감지 증폭 회로
US6737899B2 (en) * 2001-02-23 2004-05-18 Resonext Communications, Inc. High-speed latch with integrated gate
US6882200B2 (en) * 2001-07-23 2005-04-19 Intel Corporation Controlling signal states and leakage current during a sleep mode
US6680626B2 (en) * 2002-06-05 2004-01-20 Lightspeed Semiconductor Corporation High speed differential receiver
US6894541B2 (en) * 2002-10-16 2005-05-17 Stmicroelectronics Pvt. Ltd. Sense amplifier with feedback-controlled bitline access
US6819144B2 (en) * 2003-03-06 2004-11-16 Texas Instruments Incorporated Latched sense amplifier with full range differential input voltage
JP5025171B2 (ja) * 2005-09-29 2012-09-12 エスケーハイニックス株式会社 差動増幅装置
KR100714281B1 (ko) * 2006-04-28 2007-05-02 삼성전자주식회사 센스앰프 회로 및 그를 갖는 센스앰프 기반의 플립플롭
US7580297B2 (en) 2007-03-30 2009-08-25 Infineon Technologies Ag Readout of multi-level storage cells
US8885386B2 (en) * 2012-10-24 2014-11-11 Samsung Electronics Co., Ltd. Write driver in sense amplifier for resistive type memory
US11417389B2 (en) * 2020-06-30 2022-08-16 Micron Technology, Inc. Layouts for sense amplifiers and related apparatuses and systems
US12243579B2 (en) 2020-06-30 2025-03-04 Micron Technology, Inc. Layouts for sense amplifiers and related apparatuses and systems

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4333025A (en) * 1978-03-13 1982-06-01 Texas Instruments Incorporated N-Channel MOS comparator
JPS6010495A (ja) * 1983-06-30 1985-01-19 Fujitsu Ltd センスアンプ
US4551641A (en) * 1983-11-23 1985-11-05 Motorola, Inc. Sense amplifier
JPS629590A (ja) * 1985-07-08 1987-01-17 Nec Corp 増幅回路
JPH0810550B2 (ja) * 1986-09-09 1996-01-31 日本電気株式会社 バツフア回路
US5029136A (en) * 1987-11-25 1991-07-02 Texas Instruments Incorporated High-speed DRAM sense amp with high noise immunity
KR920001325B1 (ko) * 1989-06-10 1992-02-10 삼성전자 주식회사 메모리 소자내의 센스 앰프 드라이버
JP2647527B2 (ja) * 1990-02-21 1997-08-27 シャープ株式会社 センス増幅回路
US5034636A (en) * 1990-06-04 1991-07-23 Motorola, Inc. Sense amplifier with an integral logic function
KR920013458A (ko) * 1990-12-12 1992-07-29 김광호 차동감지 증폭회로
US5218569A (en) * 1991-02-08 1993-06-08 Banks Gerald J Electrically alterable non-volatile memory with n-bits per memory cell

Also Published As

Publication number Publication date
EP0744753A2 (en) 1996-11-27
JP2846850B2 (ja) 1999-01-13
EP0744753A3 (en) 1997-02-12
KR960042742A (ko) 1996-12-21
TW305045B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1997-05-11
US5796273A (en) 1998-08-18
JPH08321194A (ja) 1996-12-03
CN1147166A (zh) 1997-04-09
CN1067174C (zh) 2001-06-13

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