JPWO2025028302A5 - - Google Patents

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Publication number
JPWO2025028302A5
JPWO2025028302A5 JP2025537844A JP2025537844A JPWO2025028302A5 JP WO2025028302 A5 JPWO2025028302 A5 JP WO2025028302A5 JP 2025537844 A JP2025537844 A JP 2025537844A JP 2025537844 A JP2025537844 A JP 2025537844A JP WO2025028302 A5 JPWO2025028302 A5 JP WO2025028302A5
Authority
JP
Japan
Prior art keywords
region
etching method
substrate
process gas
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2025537844A
Other languages
English (en)
Japanese (ja)
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JPWO2025028302A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2024/025936 external-priority patent/WO2025028302A1/ja
Publication of JPWO2025028302A1 publication Critical patent/JPWO2025028302A1/ja
Publication of JPWO2025028302A5 publication Critical patent/JPWO2025028302A5/ja
Pending legal-status Critical Current

Links

JP2025537844A 2023-08-02 2024-07-19 Pending JPWO2025028302A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023126149 2023-08-02
PCT/JP2024/025936 WO2025028302A1 (ja) 2023-08-02 2024-07-19 エッチング方法及びプラズマ処理装置

Publications (2)

Publication Number Publication Date
JPWO2025028302A1 JPWO2025028302A1 (https=) 2025-02-06
JPWO2025028302A5 true JPWO2025028302A5 (https=) 2025-12-02

Family

ID=94395219

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2025537844A Pending JPWO2025028302A1 (https=) 2023-08-02 2024-07-19

Country Status (5)

Country Link
JP (1) JPWO2025028302A1 (https=)
KR (1) KR20260048572A (https=)
CN (1) CN121647062A (https=)
TW (1) TW202520374A (https=)
WO (1) WO2025028302A1 (https=)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6884722B2 (en) * 2001-09-27 2005-04-26 International Business Machines Corporation Method of fabricating a narrow polysilicon line
US9721784B2 (en) * 2013-03-15 2017-08-01 Applied Materials, Inc. Ultra-conformal carbon film deposition
JP6230954B2 (ja) * 2014-05-09 2017-11-15 東京エレクトロン株式会社 エッチング方法
US9553102B2 (en) * 2014-08-19 2017-01-24 Applied Materials, Inc. Tungsten separation
KR102452593B1 (ko) * 2015-04-15 2022-10-11 삼성전자주식회사 반도체 장치의 제조 방법
US10483109B2 (en) * 2016-04-12 2019-11-19 Tokyo Electron Limited Self-aligned spacer formation
JP6689159B2 (ja) * 2016-08-22 2020-04-28 東京エレクトロン株式会社 エッチング方法およびｄｒａｍキャパシタの製造方法
US20220165578A1 (en) * 2020-11-25 2022-05-26 Tokyo Electron Limited Substrate processing method and substrate processing apparatus
JP2023055335A (ja) * 2021-10-06 2023-04-18 東京エレクトロン株式会社 エッチング方法及びエッチング装置

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