JPWO2024195374A1 - - Google Patents
Info
- Publication number
- JPWO2024195374A1 JPWO2024195374A1 JP2025508224A JP2025508224A JPWO2024195374A1 JP WO2024195374 A1 JPWO2024195374 A1 JP WO2024195374A1 JP 2025508224 A JP2025508224 A JP 2025508224A JP 2025508224 A JP2025508224 A JP 2025508224A JP WO2024195374 A1 JPWO2024195374 A1 JP WO2024195374A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2901—Materials
- H10P14/2921—Materials being crystalline insulating materials
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/85—Coating or impregnation with inorganic materials
- C04B41/87—Ceramics
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2926—Crystal orientations
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Metallurgy (AREA)
- Structural Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023046186 | 2023-03-23 | ||
| PCT/JP2024/005221 WO2024195374A1 (ja) | 2023-03-23 | 2024-02-15 | 下地基板 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2024195374A1 true JPWO2024195374A1 (https=) | 2024-09-26 |
| JPWO2024195374A5 JPWO2024195374A5 (https=) | 2025-11-05 |
Family
ID=92841307
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025508224A Pending JPWO2024195374A1 (https=) | 2023-03-23 | 2024-02-15 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20250391657A1 (https=) |
| JP (1) | JPWO2024195374A1 (https=) |
| CN (1) | CN120882918A (https=) |
| WO (1) | WO2024195374A1 (https=) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113614293B (zh) * | 2019-03-28 | 2024-08-02 | 日本碍子株式会社 | 基底基板 |
| WO2020194802A1 (ja) * | 2019-03-28 | 2020-10-01 | 日本碍子株式会社 | 下地基板及びその製造方法 |
| WO2021048950A1 (ja) * | 2019-09-11 | 2021-03-18 | 日本碍子株式会社 | 半導体膜 |
| WO2021064817A1 (ja) * | 2019-09-30 | 2021-04-08 | 日本碍子株式会社 | 下地基板及びその製造方法 |
-
2024
- 2024-02-15 JP JP2025508224A patent/JPWO2024195374A1/ja active Pending
- 2024-02-15 CN CN202480015425.1A patent/CN120882918A/zh active Pending
- 2024-02-15 WO PCT/JP2024/005221 patent/WO2024195374A1/ja not_active Ceased
-
2025
- 2025-08-22 US US19/307,142 patent/US20250391657A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US20250391657A1 (en) | 2025-12-25 |
| CN120882918A (zh) | 2025-10-31 |
| WO2024195374A1 (ja) | 2024-09-26 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20250822 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20250822 |