JPWO2024185360A1 - - Google Patents
Info
- Publication number
- JPWO2024185360A1 JPWO2024185360A1 JP2025505130A JP2025505130A JPWO2024185360A1 JP WO2024185360 A1 JPWO2024185360 A1 JP WO2024185360A1 JP 2025505130 A JP2025505130 A JP 2025505130A JP 2025505130 A JP2025505130 A JP 2025505130A JP WO2024185360 A1 JPWO2024185360 A1 JP WO2024185360A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/50—PIN diodes
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023033611 | 2023-03-06 | ||
| PCT/JP2024/003624 WO2024185360A1 (ja) | 2023-03-06 | 2024-02-05 | 逆導通ｉｇｂｔおよび逆導通ｉｇｂｔの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2024185360A1 true JPWO2024185360A1 (https=) | 2024-09-12 |
| JPWO2024185360A5 JPWO2024185360A5 (https=) | 2025-11-20 |
Family
ID=92674402
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025505130A Pending JPWO2024185360A1 (https=) | 2023-03-06 | 2024-02-05 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPWO2024185360A1 (https=) |
| WO (1) | WO2024185360A1 (https=) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9064711B2 (en) * | 2011-06-09 | 2015-06-23 | Toyota Jidosha Kabushiki Kaisha | Semiconductor device and method for fabricating semiconductor device |
| CN104704635A (zh) * | 2012-10-02 | 2015-06-10 | 三菱电机株式会社 | 半导体装置及其制造方法 |
| JP2014192278A (ja) * | 2013-03-27 | 2014-10-06 | New Japan Radio Co Ltd | 半導体装置の製造方法 |
| DE112017000727T5 (de) * | 2016-09-14 | 2018-10-31 | Fuji Electric Co., Ltd. | RC-IGBT und Herstellungsverfahren dafür |
| JP7439465B2 (ja) * | 2019-11-12 | 2024-02-28 | 株式会社デンソー | 半導体装置 |
-
2024
- 2024-02-05 WO PCT/JP2024/003624 patent/WO2024185360A1/ja not_active Ceased
- 2024-02-05 JP JP2025505130A patent/JPWO2024185360A1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2024185360A1 (ja) | 2024-09-12 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20250421 |