JPWO2024162073A5 - - Google Patents

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Publication number
JPWO2024162073A5
JPWO2024162073A5 JP2024574457A JP2024574457A JPWO2024162073A5 JP WO2024162073 A5 JPWO2024162073 A5 JP WO2024162073A5 JP 2024574457 A JP2024574457 A JP 2024574457A JP 2024574457 A JP2024574457 A JP 2024574457A JP WO2024162073 A5 JPWO2024162073 A5 JP WO2024162073A5
Authority
JP
Japan
Prior art keywords
bonding layer
base
metal film
semiconductor laser
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024574457A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2024162073A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2024/001685 external-priority patent/WO2024162073A1/ja
Publication of JPWO2024162073A1 publication Critical patent/JPWO2024162073A1/ja
Publication of JPWO2024162073A5 publication Critical patent/JPWO2024162073A5/ja
Pending legal-status Critical Current

Links

JP2024574457A 2023-01-30 2024-01-22 Pending JPWO2024162073A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023011751 2023-01-30
PCT/JP2024/001685 WO2024162073A1 (ja) 2023-01-30 2024-01-22 発光デバイス、発光モジュール、発光デバイスの製造方法、及び、発光モジュールの製造方法

Publications (2)

Publication Number Publication Date
JPWO2024162073A1 JPWO2024162073A1 (https=) 2024-08-08
JPWO2024162073A5 true JPWO2024162073A5 (https=) 2025-10-09

Family

ID=92146557

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024574457A Pending JPWO2024162073A1 (https=) 2023-01-30 2024-01-22

Country Status (2)

Country Link
JP (1) JPWO2024162073A1 (https=)
WO (1) WO2024162073A1 (https=)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004265961A (ja) * 2003-02-28 2004-09-24 Furukawa Electric Co Ltd:The 半導体レーザ装置、半導体レーザモジュールおよび半導体レーザ装置の製造方法
JP4325232B2 (ja) * 2003-03-18 2009-09-02 日亜化学工業株式会社 窒化物半導体素子
JP7297121B2 (ja) * 2019-01-10 2023-06-23 三菱電機株式会社 半導体レーザ装置
JP7372308B2 (ja) * 2019-02-27 2023-10-31 ヌヴォトンテクノロジージャパン株式会社 半導体レーザモジュール
US20230187897A1 (en) * 2020-05-21 2023-06-15 Sony Group Corporation Semiconductor laser element and method of producing semiconductor laser element

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