JPWO2023285951A5 - - Google Patents

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Publication number
JPWO2023285951A5
JPWO2023285951A5 JP2024502139A JP2024502139A JPWO2023285951A5 JP WO2023285951 A5 JPWO2023285951 A5 JP WO2023285951A5 JP 2024502139 A JP2024502139 A JP 2024502139A JP 2024502139 A JP2024502139 A JP 2024502139A JP WO2023285951 A5 JPWO2023285951 A5 JP WO2023285951A5
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JP2024525824A5 (https=
JP7779997B2 (ja
JP2024525824A (ja
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JP2024502139A 2021-07-13 2022-07-11 能動ビア Active JP7779997B2 (ja)

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JP2025186357A JP2026027346A (ja) 2021-07-13 2025-11-05 能動ビア

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US202163221292P 2021-07-13 2021-07-13
US63/221,292 2021-07-13
PCT/IB2022/056397 WO2023285951A1 (en) 2021-07-13 2022-07-11 Active via

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JP2024525824A JP2024525824A (ja) 2024-07-12
JPWO2023285951A5 true JPWO2023285951A5 (https=) 2025-07-18
JP2024525824A5 JP2024525824A5 (https=) 2025-07-18
JP7779997B2 JP7779997B2 (ja) 2025-12-03

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JP2024502119A Pending JP2024525817A (ja) 2021-07-13 2022-07-08 薄膜半導体スイッチングデバイス
JP2024502139A Active JP7779997B2 (ja) 2021-07-13 2022-07-11 能動ビア
JP2025186357A Pending JP2026027346A (ja) 2021-07-13 2025-11-05 能動ビア
JP2025203212A Pending JP2026027531A (ja) 2021-07-13 2025-11-25 薄膜半導体スイッチングデバイス

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JP2025203212A Pending JP2026027531A (ja) 2021-07-13 2025-11-25 薄膜半導体スイッチングデバイス

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US (6) US20240332426A1 (https=)
EP (2) EP4371160A4 (https=)
JP (4) JP2024525817A (https=)
KR (4) KR20250153317A (https=)
CN (2) CN117795688A (https=)
CA (2) CA3224433A1 (https=)
WO (2) WO2023285936A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023285936A1 (en) 2021-07-13 2023-01-19 Zinite Corporation Thin film semiconductor switching device
EP4640026A1 (en) * 2022-12-23 2025-10-29 Zinite Corporation Thin film transistor
WO2024165987A1 (en) * 2023-02-09 2024-08-15 Zinite Corporation Passivation elements of a thin film transistor
CN121175800A (zh) * 2023-04-06 2025-12-19 任耐特公司 等温晶体管结构
CN121014276A (zh) 2023-04-18 2025-11-25 任耐特公司 氮化铪粘附层
TW202505981A (zh) * 2023-07-26 2025-02-01 日商半導體能源研究所股份有限公司 氧化物半導體層、氧化物半導體層的製造方法、半導體裝置及半導體裝置的製造方法
US20250204015A1 (en) * 2023-12-14 2025-06-19 Zinite Corporation Gate stack for field effect transistors
WO2025163584A1 (en) * 2024-02-01 2025-08-07 Zinite Corporation Thin-film transistors with gate-source capacitance tuning
WO2026022653A1 (en) * 2024-07-23 2026-01-29 Zinite Corporation Stackable and self-aligned tft structures
US20260032965A1 (en) * 2024-07-25 2026-01-29 Zinite Corporation Thin-film transistors and related methods of manufacture with metal nitride source/drain

Family Cites Families (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6501094B1 (en) * 1997-06-11 2002-12-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a bottom gate type thin film transistor
US6603192B2 (en) 1999-07-30 2003-08-05 Stmicroelectronics, Inc. Scratch resistance improvement by filling metal gaps
US20070194450A1 (en) * 2006-02-21 2007-08-23 Tyberg Christy S BEOL compatible FET structure
KR101513601B1 (ko) * 2008-03-07 2015-04-21 삼성전자주식회사 트랜지스터
KR101461127B1 (ko) * 2008-05-13 2014-11-14 삼성디스플레이 주식회사 반도체 장치 및 이의 제조 방법
KR100963027B1 (ko) 2008-06-30 2010-06-10 삼성모바일디스플레이주식회사 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치
US9082857B2 (en) * 2008-09-01 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising an oxide semiconductor layer
KR101525801B1 (ko) 2008-11-14 2015-06-08 삼성디스플레이 주식회사 어레이 기판 및 그 제조 방법
TWI372457B (en) * 2009-03-20 2012-09-11 Ind Tech Res Inst Esd structure for 3d ic tsv device
US8013339B2 (en) * 2009-06-01 2011-09-06 Ishiang Shih Thin film transistors and arrays with controllable threshold voltages and off state leakage current
WO2011027656A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device
KR102220606B1 (ko) 2009-11-06 2021-03-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR20110074355A (ko) * 2009-12-24 2011-06-30 삼성전자주식회사 트랜지스터
US8809861B2 (en) 2010-12-29 2014-08-19 Stmicroelectronics Pte Ltd. Thin film metal-dielectric-metal transistor
WO2012117439A1 (ja) * 2011-02-28 2012-09-07 パナソニック株式会社 薄膜半導体装置及びその製造方法
KR102072244B1 (ko) * 2011-11-30 2020-01-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
JP2013149827A (ja) * 2012-01-20 2013-08-01 Sony Corp 薄膜トランジスタおよびその製造方法、並びに表示装置および電子機器
US9054204B2 (en) * 2012-01-20 2015-06-09 Sony Corporation Thin-film transistor, method of manufacturing the same, display unit, and electronic apparatus
JP5390654B2 (ja) * 2012-03-08 2014-01-15 株式会社東芝 半導体装置の製造方法
US20160315196A1 (en) * 2012-04-13 2016-10-27 The Governors Of The University Of Alberta Buried source schottky barrier thin film transistor and method of manufacture
JP5972065B2 (ja) 2012-06-20 2016-08-17 富士フイルム株式会社 薄膜トランジスタの製造方法
US9685559B2 (en) * 2012-12-21 2017-06-20 The Regents Of The University Of California Vertically stacked heterostructures including graphene
US8933564B2 (en) * 2012-12-21 2015-01-13 Intel Corporation Landing structure for through-silicon via
JP2014229713A (ja) * 2013-05-21 2014-12-08 独立行政法人産業技術総合研究所 半導体装置および半導体装置の製造方法
CA2932446A1 (en) * 2013-12-04 2015-06-11 The Governors Of The University Of Alberta Buried source schottky barrier thin film transistor and method of manufacture
JP2016146422A (ja) * 2015-02-09 2016-08-12 株式会社ジャパンディスプレイ 表示装置
WO2016128859A1 (en) * 2015-02-11 2016-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9761732B2 (en) * 2015-02-25 2017-09-12 Snaptrack Inc. Tunnel thin film transistor with hetero-junction structure
US10217819B2 (en) * 2015-05-20 2019-02-26 Samsung Electronics Co., Ltd. Semiconductor device including metal-2 dimensional material-semiconductor contact
DE112015006960T5 (de) * 2015-09-25 2018-06-07 Intel Corporation Lang-kanal-mos-transistoren für kriechverlustarme anwendungen auf einem kurz-kanal-cmos-chip
WO2017061050A1 (ja) * 2015-10-09 2017-04-13 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置
US9954101B2 (en) * 2016-06-15 2018-04-24 International Business Machines Corporation Precise junction placement in vertical semiconductor devices using etch stop layers
US9685484B1 (en) * 2016-07-20 2017-06-20 Sandisk Technologies Llc Reversible resistivity memory with crystalline silicon bit line
CN109643742B (zh) * 2016-08-26 2024-09-27 英特尔公司 集成电路器件结构和双侧制造技术
KR102603300B1 (ko) * 2016-12-30 2023-11-15 엘지디스플레이 주식회사 박막 트랜지스터, 그의 제조방법, 및 그를 포함하는 유기발광 표시장치
JP7086488B2 (ja) 2017-03-21 2022-06-20 日本化薬株式会社 有機半導体組成物、有機薄膜及び有機薄膜トランジスタ
CN111052395A (zh) * 2017-08-31 2020-04-21 美光科技公司 半导体装置、晶体管以及用于接触金属氧化物半导体装置的相关方法
US11227953B2 (en) 2017-11-29 2022-01-18 Japan Science And Technology Agency Tunneling field effect transistor
CN108109996B (zh) * 2017-12-15 2021-06-22 西安科锐盛创新科技有限公司 基于二极管的集成电路抗静电转接板及其制备方法
CN108091624B (zh) * 2017-12-15 2020-12-22 浙江清华柔性电子技术研究院 用于系统级封装的硅通孔转接板
GB2571351A (en) * 2018-02-27 2019-08-28 Univ Manchester Device and method
US11264512B2 (en) * 2018-06-29 2022-03-01 Intel Corporation Thin film transistors having U-shaped features
WO2020043089A1 (en) * 2018-08-31 2020-03-05 Changxin Memory Technologies, Inc. Through-silicon via (tsv) fault-tolerant circuit, method for tsv fault-tolerance and integrated circuit (ic)
US20200083259A1 (en) 2018-09-11 2020-03-12 HKC Corporation Limited Array substrate, method for fabricating array substrate, and display
US11255902B2 (en) * 2018-09-21 2022-02-22 Micron Technology, Inc. Apparatuses for selective TSV block testing
US11527656B2 (en) * 2018-09-25 2022-12-13 Intel Corporation Contact electrodes for vertical thin-film transistors
US11335789B2 (en) * 2018-09-26 2022-05-17 Intel Corporation Channel structures for thin-film transistors
US11417770B2 (en) * 2018-09-26 2022-08-16 Intel Corporation Vertical thin-film transistors between metal layers
KR102718050B1 (ko) * 2018-10-25 2024-10-15 엘지디스플레이 주식회사 트랜지스터 및 전자장치
US20200167658A1 (en) 2018-11-24 2020-05-28 Jessica Du System of Portable Real Time Neurofeedback Training
GB201819570D0 (en) * 2018-11-30 2019-01-16 Univ Surrey Multiple-gate transistor
US10818324B2 (en) * 2018-12-18 2020-10-27 Micron Technology, Inc. Memory array decoding and interconnects
US11659722B2 (en) * 2018-12-19 2023-05-23 Intel Corporation Thin-film-transistor based complementary metal-oxide-semiconductor (CMOS) circuit
JP7655853B2 (ja) * 2019-02-11 2025-04-02 サンライズ メモリー コーポレイション 垂直型薄膜トランジスタ、及び、垂直型薄膜トランジスタの、3次元メモリアレイのためのビット線コネクタとしての応用メモリ回路方法
KR102711918B1 (ko) * 2019-12-27 2024-09-27 엘지디스플레이 주식회사 박막 트랜지스터, 그 제조방법 및 이를 포함하는 표시장치
DE102021104070A1 (de) 2020-05-28 2021-12-02 Taiwan Semiconductor Manufacturing Co., Ltd. Halbleiterchip
WO2023285936A1 (en) 2021-07-13 2023-01-19 Zinite Corporation Thin film semiconductor switching device

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