JPWO2023285951A5 - - Google Patents
Info
- Publication number
- JPWO2023285951A5 JPWO2023285951A5 JP2024502139A JP2024502139A JPWO2023285951A5 JP WO2023285951 A5 JPWO2023285951 A5 JP WO2023285951A5 JP 2024502139 A JP2024502139 A JP 2024502139A JP 2024502139 A JP2024502139 A JP 2024502139A JP WO2023285951 A5 JPWO2023285951 A5 JP WO2023285951A5
- Authority
- JP
- Japan
- Prior art keywords
- contact
- forming
- source
- gate
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2025186357A JP2026027346A (ja) | 2021-07-13 | 2025-11-05 | 能動ビア |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202163221292P | 2021-07-13 | 2021-07-13 | |
| US63/221,292 | 2021-07-13 | ||
| PCT/IB2022/056397 WO2023285951A1 (en) | 2021-07-13 | 2022-07-11 | Active via |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025186357A Division JP2026027346A (ja) | 2021-07-13 | 2025-11-05 | 能動ビア |
Publications (4)
| Publication Number | Publication Date |
|---|---|
| JP2024525824A JP2024525824A (ja) | 2024-07-12 |
| JPWO2023285951A5 true JPWO2023285951A5 (https=) | 2025-07-18 |
| JP2024525824A5 JP2024525824A5 (https=) | 2025-07-18 |
| JP7779997B2 JP7779997B2 (ja) | 2025-12-03 |
Family
ID=84920064
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024502119A Pending JP2024525817A (ja) | 2021-07-13 | 2022-07-08 | 薄膜半導体スイッチングデバイス |
| JP2024502139A Active JP7779997B2 (ja) | 2021-07-13 | 2022-07-11 | 能動ビア |
| JP2025186357A Pending JP2026027346A (ja) | 2021-07-13 | 2025-11-05 | 能動ビア |
| JP2025203212A Pending JP2026027531A (ja) | 2021-07-13 | 2025-11-25 | 薄膜半導体スイッチングデバイス |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024502119A Pending JP2024525817A (ja) | 2021-07-13 | 2022-07-08 | 薄膜半導体スイッチングデバイス |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025186357A Pending JP2026027346A (ja) | 2021-07-13 | 2025-11-05 | 能動ビア |
| JP2025203212A Pending JP2026027531A (ja) | 2021-07-13 | 2025-11-25 | 薄膜半導体スイッチングデバイス |
Country Status (7)
| Country | Link |
|---|---|
| US (6) | US20240332426A1 (https=) |
| EP (2) | EP4371160A4 (https=) |
| JP (4) | JP2024525817A (https=) |
| KR (4) | KR20250153317A (https=) |
| CN (2) | CN117795688A (https=) |
| CA (2) | CA3224433A1 (https=) |
| WO (2) | WO2023285936A1 (https=) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023285936A1 (en) | 2021-07-13 | 2023-01-19 | Zinite Corporation | Thin film semiconductor switching device |
| EP4640026A1 (en) * | 2022-12-23 | 2025-10-29 | Zinite Corporation | Thin film transistor |
| WO2024165987A1 (en) * | 2023-02-09 | 2024-08-15 | Zinite Corporation | Passivation elements of a thin film transistor |
| CN121175800A (zh) * | 2023-04-06 | 2025-12-19 | 任耐特公司 | 等温晶体管结构 |
| CN121014276A (zh) | 2023-04-18 | 2025-11-25 | 任耐特公司 | 氮化铪粘附层 |
| TW202505981A (zh) * | 2023-07-26 | 2025-02-01 | 日商半導體能源研究所股份有限公司 | 氧化物半導體層、氧化物半導體層的製造方法、半導體裝置及半導體裝置的製造方法 |
| US20250204015A1 (en) * | 2023-12-14 | 2025-06-19 | Zinite Corporation | Gate stack for field effect transistors |
| WO2025163584A1 (en) * | 2024-02-01 | 2025-08-07 | Zinite Corporation | Thin-film transistors with gate-source capacitance tuning |
| WO2026022653A1 (en) * | 2024-07-23 | 2026-01-29 | Zinite Corporation | Stackable and self-aligned tft structures |
| US20260032965A1 (en) * | 2024-07-25 | 2026-01-29 | Zinite Corporation | Thin-film transistors and related methods of manufacture with metal nitride source/drain |
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| US9082857B2 (en) * | 2008-09-01 | 2015-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising an oxide semiconductor layer |
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| JP2013149827A (ja) * | 2012-01-20 | 2013-08-01 | Sony Corp | 薄膜トランジスタおよびその製造方法、並びに表示装置および電子機器 |
| US9054204B2 (en) * | 2012-01-20 | 2015-06-09 | Sony Corporation | Thin-film transistor, method of manufacturing the same, display unit, and electronic apparatus |
| JP5390654B2 (ja) * | 2012-03-08 | 2014-01-15 | 株式会社東芝 | 半導体装置の製造方法 |
| US20160315196A1 (en) * | 2012-04-13 | 2016-10-27 | The Governors Of The University Of Alberta | Buried source schottky barrier thin film transistor and method of manufacture |
| JP5972065B2 (ja) | 2012-06-20 | 2016-08-17 | 富士フイルム株式会社 | 薄膜トランジスタの製造方法 |
| US9685559B2 (en) * | 2012-12-21 | 2017-06-20 | The Regents Of The University Of California | Vertically stacked heterostructures including graphene |
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| US9761732B2 (en) * | 2015-02-25 | 2017-09-12 | Snaptrack Inc. | Tunnel thin film transistor with hetero-junction structure |
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| US9954101B2 (en) * | 2016-06-15 | 2018-04-24 | International Business Machines Corporation | Precise junction placement in vertical semiconductor devices using etch stop layers |
| US9685484B1 (en) * | 2016-07-20 | 2017-06-20 | Sandisk Technologies Llc | Reversible resistivity memory with crystalline silicon bit line |
| CN109643742B (zh) * | 2016-08-26 | 2024-09-27 | 英特尔公司 | 集成电路器件结构和双侧制造技术 |
| KR102603300B1 (ko) * | 2016-12-30 | 2023-11-15 | 엘지디스플레이 주식회사 | 박막 트랜지스터, 그의 제조방법, 및 그를 포함하는 유기발광 표시장치 |
| JP7086488B2 (ja) | 2017-03-21 | 2022-06-20 | 日本化薬株式会社 | 有機半導体組成物、有機薄膜及び有機薄膜トランジスタ |
| CN111052395A (zh) * | 2017-08-31 | 2020-04-21 | 美光科技公司 | 半导体装置、晶体管以及用于接触金属氧化物半导体装置的相关方法 |
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| CN108109996B (zh) * | 2017-12-15 | 2021-06-22 | 西安科锐盛创新科技有限公司 | 基于二极管的集成电路抗静电转接板及其制备方法 |
| CN108091624B (zh) * | 2017-12-15 | 2020-12-22 | 浙江清华柔性电子技术研究院 | 用于系统级封装的硅通孔转接板 |
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| KR102718050B1 (ko) * | 2018-10-25 | 2024-10-15 | 엘지디스플레이 주식회사 | 트랜지스터 및 전자장치 |
| US20200167658A1 (en) | 2018-11-24 | 2020-05-28 | Jessica Du | System of Portable Real Time Neurofeedback Training |
| GB201819570D0 (en) * | 2018-11-30 | 2019-01-16 | Univ Surrey | Multiple-gate transistor |
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| JP7655853B2 (ja) * | 2019-02-11 | 2025-04-02 | サンライズ メモリー コーポレイション | 垂直型薄膜トランジスタ、及び、垂直型薄膜トランジスタの、3次元メモリアレイのためのビット線コネクタとしての応用メモリ回路方法 |
| KR102711918B1 (ko) * | 2019-12-27 | 2024-09-27 | 엘지디스플레이 주식회사 | 박막 트랜지스터, 그 제조방법 및 이를 포함하는 표시장치 |
| DE102021104070A1 (de) | 2020-05-28 | 2021-12-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Halbleiterchip |
| WO2023285936A1 (en) | 2021-07-13 | 2023-01-19 | Zinite Corporation | Thin film semiconductor switching device |
-
2022
- 2022-07-08 WO PCT/IB2022/056349 patent/WO2023285936A1/en not_active Ceased
- 2022-07-08 KR KR1020257033608A patent/KR20250153317A/ko active Pending
- 2022-07-08 CN CN202280055063.XA patent/CN117795688A/zh active Pending
- 2022-07-08 EP EP22841576.6A patent/EP4371160A4/en active Pending
- 2022-07-08 JP JP2024502119A patent/JP2024525817A/ja active Pending
- 2022-07-08 KR KR1020247002156A patent/KR102870900B1/ko active Active
- 2022-07-08 CA CA3224433A patent/CA3224433A1/en active Pending
- 2022-07-08 US US18/576,205 patent/US20240332426A1/en active Pending
- 2022-07-11 EP EP22841579.0A patent/EP4371152A4/en active Pending
- 2022-07-11 JP JP2024502139A patent/JP7779997B2/ja active Active
- 2022-07-11 KR KR1020257033605A patent/KR20250153316A/ko active Pending
- 2022-07-11 CN CN202280049363.7A patent/CN117616559A/zh active Pending
- 2022-07-11 WO PCT/IB2022/056397 patent/WO2023285951A1/en not_active Ceased
- 2022-07-11 CA CA3224452A patent/CA3224452A1/en active Pending
- 2022-07-11 KR KR1020247003461A patent/KR102870896B1/ko active Active
-
2023
- 2023-10-26 US US18/384,066 patent/US11949019B2/en active Active
-
2024
- 2024-01-03 US US18/403,268 patent/US12148838B2/en active Active
- 2024-09-30 US US18/902,625 patent/US20250022961A1/en active Pending
-
2025
- 2025-02-21 US US19/060,198 patent/US12446258B2/en active Active
- 2025-08-15 US US19/301,777 patent/US12593467B2/en active Active
- 2025-11-05 JP JP2025186357A patent/JP2026027346A/ja active Pending
- 2025-11-25 JP JP2025203212A patent/JP2026027531A/ja active Pending
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