JPWO2023281674A1 - - Google Patents

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Publication number
JPWO2023281674A1
JPWO2023281674A1 JP2023532962A JP2023532962A JPWO2023281674A1 JP WO2023281674 A1 JPWO2023281674 A1 JP WO2023281674A1 JP 2023532962 A JP2023532962 A JP 2023532962A JP 2023532962 A JP2023532962 A JP 2023532962A JP WO2023281674 A1 JPWO2023281674 A1 JP WO2023281674A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023532962A
Other languages
Japanese (ja)
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JPWO2023281674A5 (https=
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2023281674A1 publication Critical patent/JPWO2023281674A1/ja
Publication of JPWO2023281674A5 publication Critical patent/JPWO2023281674A5/ja
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N19/00—Investigating materials by mechanical methods
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N5/00—Analysing materials by weighing, e.g. weighing small particles separated from a gas or liquid
    • G01N5/02—Analysing materials by weighing, e.g. weighing small particles separated from a gas or liquid by absorbing or adsorbing components of a material and determining change of weight of the adsorbent, e.g. determining moisture content

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Micromachines (AREA)
JP2023532962A 2021-07-07 2021-07-07 Pending JPWO2023281674A1 (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/025694 WO2023281674A1 (ja) 2021-07-07 2021-07-07 膜型表面応力センサおよび膜型表面応力センサの製造方法

Publications (2)

Publication Number Publication Date
JPWO2023281674A1 true JPWO2023281674A1 (https=) 2023-01-12
JPWO2023281674A5 JPWO2023281674A5 (https=) 2024-02-05

Family

ID=84801486

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023532962A Pending JPWO2023281674A1 (https=) 2021-07-07 2021-07-07

Country Status (2)

Country Link
JP (1) JPWO2023281674A1 (https=)
WO (1) WO2023281674A1 (https=)

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5023979A (https=) * 1973-07-04 1975-03-14
JPS6261334A (ja) * 1985-09-11 1987-03-18 Hitachi Ltd パタ−ンの形成方法
JPH0383363A (ja) * 1989-08-28 1991-04-09 Matsushita Electron Corp 半導体装置の製造方法
JPH03148181A (ja) * 1989-11-02 1991-06-24 Mitsubishi Electric Corp 半導体圧力センサ
JPH07240395A (ja) * 1994-02-28 1995-09-12 Matsushita Electric Works Ltd 半導体装置の製造方法
JPH09304325A (ja) * 1995-08-24 1997-11-28 Matsushita Electric Ind Co Ltd 金属の表面状態評価方法及び半導体装置の製造方法
JPH10144686A (ja) * 1996-11-05 1998-05-29 Toshiba Microelectron Corp 半導体装置
JP2004247444A (ja) * 2003-02-13 2004-09-02 Sony Corp 薄膜パターンの形成方法
JP2004531720A (ja) * 2001-04-25 2004-10-14 サントル・ナショナル・ドゥ・ラ・ルシェルシュ・シアンティフィク−シーエヌアールエス バイオセンサーマトリックスおよびその製造方法
US20100167517A1 (en) * 2008-12-26 2010-07-01 Texas Instruments Incorporated Cross-contamination control for processing of circuits comprising mos devices that include metal comprising high-k dielectrics
WO2011148774A1 (ja) * 2010-05-24 2011-12-01 独立行政法人物質・材料研究機構 表面応力センサ
WO2020179400A1 (ja) * 2019-03-06 2020-09-10 国立研究開発法人物質・材料研究機構 水素センサー及び水素検出方法
WO2020218086A1 (ja) * 2019-04-26 2020-10-29 国立研究開発法人物質・材料研究機構 ポリ（２，６－ジフェニル－ｐ－フェニレンオキシド）を使用したナノメカニカルセンサ用感応膜、この感応膜を有するナノメカニカルセンサ、この感応膜のナノメカニカルセンサへの塗布方法、及びこのナノメカニカルセンサの感応膜の再生方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040014240A1 (en) * 2000-07-06 2004-01-22 Keigo Takeguchi Molecule detecting sensor
JP3835195B2 (ja) * 2001-03-30 2006-10-18 セイコーエプソン株式会社 バイオセンサの製造方法
JP6033602B2 (ja) * 2012-08-08 2016-11-30 株式会社日立ハイテクノロジーズ 生体分子検出方法、生体分子検出装置、および分析用デバイス
JP2016045032A (ja) * 2014-08-21 2016-04-04 日本電信電話株式会社 生体分子検出素子
JP7123593B2 (ja) * 2018-03-23 2022-08-23 東洋鋼鈑株式会社 マイクロサテライト検出マイクロアレイ及びこれを用いたマイクロサテライト検出方法
US20220260568A1 (en) * 2019-07-10 2022-08-18 Nec Corporation Membrane-type surface-stress sensor and analysis method using the same

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5023979A (https=) * 1973-07-04 1975-03-14
JPS6261334A (ja) * 1985-09-11 1987-03-18 Hitachi Ltd パタ−ンの形成方法
JPH0383363A (ja) * 1989-08-28 1991-04-09 Matsushita Electron Corp 半導体装置の製造方法
JPH03148181A (ja) * 1989-11-02 1991-06-24 Mitsubishi Electric Corp 半導体圧力センサ
JPH07240395A (ja) * 1994-02-28 1995-09-12 Matsushita Electric Works Ltd 半導体装置の製造方法
JPH09304325A (ja) * 1995-08-24 1997-11-28 Matsushita Electric Ind Co Ltd 金属の表面状態評価方法及び半導体装置の製造方法
JPH10144686A (ja) * 1996-11-05 1998-05-29 Toshiba Microelectron Corp 半導体装置
JP2004531720A (ja) * 2001-04-25 2004-10-14 サントル・ナショナル・ドゥ・ラ・ルシェルシュ・シアンティフィク−シーエヌアールエス バイオセンサーマトリックスおよびその製造方法
JP2004247444A (ja) * 2003-02-13 2004-09-02 Sony Corp 薄膜パターンの形成方法
US20100167517A1 (en) * 2008-12-26 2010-07-01 Texas Instruments Incorporated Cross-contamination control for processing of circuits comprising mos devices that include metal comprising high-k dielectrics
WO2011148774A1 (ja) * 2010-05-24 2011-12-01 独立行政法人物質・材料研究機構 表面応力センサ
WO2020179400A1 (ja) * 2019-03-06 2020-09-10 国立研究開発法人物質・材料研究機構 水素センサー及び水素検出方法
WO2020218086A1 (ja) * 2019-04-26 2020-10-29 国立研究開発法人物質・材料研究機構 ポリ（２，６－ジフェニル－ｐ－フェニレンオキシド）を使用したナノメカニカルセンサ用感応膜、この感応膜を有するナノメカニカルセンサ、この感応膜のナノメカニカルセンサへの塗布方法、及びこのナノメカニカルセンサの感応膜の再生方法

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
HITOSHI HABUKA: "Chemical vapor deposition of amorphous silicon carbide thin films on metal surfaces using monomethyl", SURFACE & COATINGS TECHNOLOGY, vol. 217, JPN6024051354, 2013, pages 88 - 93, ISSN: 0005499471 *
石井昌彦: "イオン照射により形成されるSiアモルファス層のXPSその場観察", 豊田中央研究所R&D レビュー, vol. 32, no. 3, JPN6024051355, September 1997 (1997-09-01), pages 53 - 60, ISSN: 0005609552 *
藤井兼栄: "イオン注入による表面処理と最近の動向", 日本ゴム協会誌, vol. 第67巻第7号, JPN6024051356, 1994, pages 483 - 491, ISSN: 0005609551 *

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