JPWO2023278171A5 - - Google Patents

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Publication number
JPWO2023278171A5
JPWO2023278171A5 JP2023579082A JP2023579082A JPWO2023278171A5 JP WO2023278171 A5 JPWO2023278171 A5 JP WO2023278171A5 JP 2023579082 A JP2023579082 A JP 2023579082A JP 2023579082 A JP2023579082 A JP 2023579082A JP WO2023278171 A5 JPWO2023278171 A5 JP WO2023278171A5
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JP2023579082A
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Japanese (ja)
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JP2024526172A (ja
JP2024526172A5 (https=
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Priority claimed from PCT/US2022/033858 external-priority patent/WO2023278171A1/en
Publication of JP2024526172A publication Critical patent/JP2024526172A/ja
Publication of JPWO2023278171A5 publication Critical patent/JPWO2023278171A5/ja
Publication of JP2024526172A5 publication Critical patent/JP2024526172A5/ja
Pending legal-status Critical Current

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JP2023579082A 2021-06-29 2022-06-16 高アスペクト比エッチングのための多状態パルシング Pending JP2024526172A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202163216519P 2021-06-29 2021-06-29
US63/216,519 2021-06-29
PCT/US2022/033858 WO2023278171A1 (en) 2021-06-29 2022-06-16 Multiple state pulsing for high aspect ratio etch

Publications (3)

Publication Number Publication Date
JP2024526172A JP2024526172A (ja) 2024-07-17
JPWO2023278171A5 true JPWO2023278171A5 (https=) 2025-06-18
JP2024526172A5 JP2024526172A5 (https=) 2025-06-18

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ID=84692934

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023579082A Pending JP2024526172A (ja) 2021-06-29 2022-06-16 高アスペクト比エッチングのための多状態パルシング

Country Status (4)

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US (2) US12278112B2 (https=)
JP (1) JP2024526172A (https=)
KR (1) KR20240026068A (https=)
WO (1) WO2023278171A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114342049B (zh) * 2019-08-22 2025-08-19 朗姆研究公司 用于控制掩模形状并打破选择性与工艺裕度权衡的多态rf脉冲
WO2022093551A1 (en) * 2020-10-26 2022-05-05 Lam Research Corporation Synchronization of rf pulsing schemes and of sensor data collection

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6093332A (en) * 1998-02-04 2000-07-25 Lam Research Corporation Methods for reducing mask erosion during plasma etching
JP3555084B2 (ja) * 2001-06-11 2004-08-18 Ｎｅｃエレクトロニクス株式会社 半導体基板に対するプラズマ処理方法及び半導体基板のためのプラズマ処理装置
US9123509B2 (en) 2007-06-29 2015-09-01 Varian Semiconductor Equipment Associates, Inc. Techniques for plasma processing a substrate
US20090004836A1 (en) 2007-06-29 2009-01-01 Varian Semiconductor Equipment Associates, Inc. Plasma doping with enhanced charge neutralization
US9290848B2 (en) * 2014-06-30 2016-03-22 Tokyo Electron Limited Anisotropic etch of copper using passivation
KR101745686B1 (ko) 2014-07-10 2017-06-12 도쿄엘렉트론가부시키가이샤 기판의 고정밀 에칭을 위한 방법
US9640371B2 (en) * 2014-10-20 2017-05-02 Lam Research Corporation System and method for detecting a process point in multi-mode pulse processes
KR101677748B1 (ko) 2014-10-29 2016-11-29 삼성전자 주식회사 펄스 플라즈마 장치 및 펄스 플라즈마 장치 구동 방법
US9788405B2 (en) * 2015-10-03 2017-10-10 Applied Materials, Inc. RF power delivery with approximated saw tooth wave pulsing
KR101998943B1 (ko) * 2016-01-20 2019-07-10 도쿄엘렉트론가부시키가이샤 하이 애스펙스비의 피처를 에칭하기 위한 전력 변조
US11817295B2 (en) * 2019-08-14 2023-11-14 Tokyo Electron Limited Three-phase pulsing systems and methods for plasma processing
CN114342049B (zh) 2019-08-22 2025-08-19 朗姆研究公司 用于控制掩模形状并打破选择性与工艺裕度权衡的多态rf脉冲
TWI889813B (zh) * 2020-05-14 2025-07-11 日商東京威力科創股份有限公司 電漿處理裝置
TWI906346B (zh) * 2020-08-31 2025-12-01 日商東京威力科創股份有限公司 電漿處理裝置及電漿處理方法

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