JPWO2023228403A1 - - Google Patents

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Publication number
JPWO2023228403A1
JPWO2023228403A1 JP2024522865A JP2024522865A JPWO2023228403A1 JP WO2023228403 A1 JPWO2023228403 A1 JP WO2023228403A1 JP 2024522865 A JP2024522865 A JP 2024522865A JP 2024522865 A JP2024522865 A JP 2024522865A JP WO2023228403 A1 JPWO2023228403 A1 JP WO2023228403A1
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024522865A
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Japanese (ja)
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JP7852712B2 (ja
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Publication of JPWO2023228403A1 publication Critical patent/JPWO2023228403A1/ja
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Publication of JP7852712B2 publication Critical patent/JP7852712B2/ja
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
JP2024522865A 2022-05-27 光デバイス Active JP7852712B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/021733 WO2023228403A1 (ja) 2022-05-27 2022-05-27 光デバイス

Publications (2)

Publication Number Publication Date
JPWO2023228403A1 true JPWO2023228403A1 (https=) 2023-11-30
JP7852712B2 JP7852712B2 (ja) 2026-04-28

Family

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Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6155981A (ja) * 1984-08-27 1986-03-20 Kokusai Denshin Denwa Co Ltd <Kdd> 半導体発光素子
JP2003234532A (ja) * 2002-02-08 2003-08-22 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2010113084A (ja) * 2008-11-05 2010-05-20 Nippon Telegr & Teleph Corp <Ntt> 光信号処理装置
JP2011159752A (ja) * 2010-01-29 2011-08-18 Nippon Telegr & Teleph Corp <Ntt> 光変調信号生成装置及び光変調信号生成方法
JP2013197815A (ja) * 2012-03-19 2013-09-30 Nippon Telegr & Teleph Corp <Ntt> 変調光源および変調信号の生成方法
US20150288137A1 (en) * 2012-06-25 2015-10-08 Korea Advanced Institute Of Science And Technology Wavelength-maintaining fabry-perot laser diode and optical transmitter including same
JP2017207687A (ja) * 2016-05-20 2017-11-24 日本電信電話株式会社 広帯域安定化光源
WO2018117077A1 (ja) * 2016-12-19 2018-06-28 古河電気工業株式会社 光集積素子および光送信機モジュール
JP2019105808A (ja) * 2017-12-14 2019-06-27 日本電信電話株式会社 光学素子およびその製造方法
WO2020158431A1 (ja) * 2019-02-01 2020-08-06 日本電信電話株式会社 波長可変レーザ

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6155981A (ja) * 1984-08-27 1986-03-20 Kokusai Denshin Denwa Co Ltd <Kdd> 半導体発光素子
JP2003234532A (ja) * 2002-02-08 2003-08-22 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2010113084A (ja) * 2008-11-05 2010-05-20 Nippon Telegr & Teleph Corp <Ntt> 光信号処理装置
JP2011159752A (ja) * 2010-01-29 2011-08-18 Nippon Telegr & Teleph Corp <Ntt> 光変調信号生成装置及び光変調信号生成方法
JP2013197815A (ja) * 2012-03-19 2013-09-30 Nippon Telegr & Teleph Corp <Ntt> 変調光源および変調信号の生成方法
US20150288137A1 (en) * 2012-06-25 2015-10-08 Korea Advanced Institute Of Science And Technology Wavelength-maintaining fabry-perot laser diode and optical transmitter including same
JP2017207687A (ja) * 2016-05-20 2017-11-24 日本電信電話株式会社 広帯域安定化光源
WO2018117077A1 (ja) * 2016-12-19 2018-06-28 古河電気工業株式会社 光集積素子および光送信機モジュール
JP2019105808A (ja) * 2017-12-14 2019-06-27 日本電信電話株式会社 光学素子およびその製造方法
WO2020158431A1 (ja) * 2019-02-01 2020-08-06 日本電信電話株式会社 波長可変レーザ

Also Published As

Publication number Publication date
US20250364781A1 (en) 2025-11-27
WO2023228403A1 (ja) 2023-11-30

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