JPWO2023189003A5 - - Google Patents
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- Publication number
- JPWO2023189003A5 JPWO2023189003A5 JP2024511434A JP2024511434A JPWO2023189003A5 JP WO2023189003 A5 JPWO2023189003 A5 JP WO2023189003A5 JP 2024511434 A JP2024511434 A JP 2024511434A JP 2024511434 A JP2024511434 A JP 2024511434A JP WO2023189003 A5 JPWO2023189003 A5 JP WO2023189003A5
- Authority
- JP
- Japan
- Prior art keywords
- film transistor
- crystal orientation
- thin film
- semiconductor layer
- oxide semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022057461 | 2022-03-30 | ||
| PCT/JP2023/006037 WO2023189003A1 (ja) | 2022-03-30 | 2023-02-20 | 薄膜トランジスタ及び電子機器 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023189003A1 JPWO2023189003A1 (https=) | 2023-10-05 |
| JPWO2023189003A5 true JPWO2023189003A5 (https=) | 2024-12-10 |
Family
ID=88200356
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024511434A Pending JPWO2023189003A1 (https=) | 2022-03-30 | 2023-02-20 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20250006783A1 (https=) |
| JP (1) | JPWO2023189003A1 (https=) |
| KR (1) | KR102944064B1 (https=) |
| CN (1) | CN118830088A (https=) |
| DE (1) | DE112023000743T5 (https=) |
| TW (1) | TWI876308B (https=) |
| WO (1) | WO2023189003A1 (https=) |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101402261B1 (ko) * | 2007-09-18 | 2014-06-03 | 삼성디스플레이 주식회사 | 박막 트랜지스터의 제조 방법 |
| JP5442234B2 (ja) * | 2008-10-24 | 2014-03-12 | 株式会社半導体エネルギー研究所 | 半導体装置及び表示装置 |
| WO2011046025A1 (en) * | 2009-10-16 | 2011-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Logic circuit and semiconductor device |
| US8871565B2 (en) | 2010-09-13 | 2014-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP5189674B2 (ja) * | 2010-12-28 | 2013-04-24 | 出光興産株式会社 | 酸化物半導体薄膜層を有する積層構造、積層構造の製造方法、薄膜トランジスタ及び表示装置 |
| TWI557910B (zh) * | 2011-06-16 | 2016-11-11 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| EP2880690B1 (en) | 2012-08-03 | 2019-02-27 | Semiconductor Energy Laboratory Co. Ltd. | Semiconductor device with oxide semiconductor stacked film |
| TWI761605B (zh) | 2012-09-14 | 2022-04-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| KR102220279B1 (ko) | 2012-10-19 | 2021-02-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체막을 포함하는 다층막 및 반도체 장치의 제작 방법 |
| US9425217B2 (en) | 2013-09-23 | 2016-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| WO2017017966A1 (ja) * | 2015-07-30 | 2017-02-02 | 出光興産株式会社 | 結晶質酸化物半導体薄膜、結晶質酸化物半導体薄膜の製造方法及び薄膜トランジスタ |
| CN109121438B (zh) | 2016-02-12 | 2022-02-18 | 株式会社半导体能源研究所 | 半导体装置以及包括该半导体装置的显示装置 |
| JP7187322B2 (ja) * | 2017-02-01 | 2022-12-12 | 出光興産株式会社 | 結晶質酸化物半導体薄膜、積層体の製造方法、薄膜トランジスタ、薄膜トランジスタの製造方法、電子機器、車載用表示装置 |
-
2023
- 2023-02-20 KR KR1020247031420A patent/KR102944064B1/ko active Active
- 2023-02-20 JP JP2024511434A patent/JPWO2023189003A1/ja active Pending
- 2023-02-20 CN CN202380025428.9A patent/CN118830088A/zh active Pending
- 2023-02-20 DE DE112023000743.8T patent/DE112023000743T5/de active Pending
- 2023-02-20 WO PCT/JP2023/006037 patent/WO2023189003A1/ja not_active Ceased
- 2023-03-30 TW TW112112206A patent/TWI876308B/zh active
-
2024
- 2024-09-11 US US18/830,651 patent/US20250006783A1/en active Pending
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