JPWO2023188161A1 - - Google Patents

Info

Publication number
JPWO2023188161A1
JPWO2023188161A1 JP2024510934A JP2024510934A JPWO2023188161A1 JP WO2023188161 A1 JPWO2023188161 A1 JP WO2023188161A1 JP 2024510934 A JP2024510934 A JP 2024510934A JP 2024510934 A JP2024510934 A JP 2024510934A JP WO2023188161 A1 JPWO2023188161 A1 JP WO2023188161A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024510934A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2023188161A1 publication Critical patent/JPWO2023188161A1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H03F3/2171—Class D power amplifiers; Switching amplifiers with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/50—Amplifiers in which input is applied to, or output is derived from, an impedance common to input and output circuits of the amplifying element, e.g. cathode follower
    • H03F3/505—Amplifiers in which input is applied to, or output is derived from, an impedance common to input and output circuits of the amplifying element, e.g. cathode follower with field-effect devices
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H04B2001/0408—Circuits with power amplifiers
    • H04B2001/0416—Circuits with power amplifiers having gain or transmission power control
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L5/00—Arrangements affording multiple use of the transmission path
    • H04L5/14—Two-way operation using the same type of signal, i.e. duplex

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Transmitters (AREA)
JP2024510934A 2022-03-30 2022-03-30 Pending JPWO2023188161A1 (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/016155 WO2023188161A1 (ja) 2022-03-30 2022-03-30 無線通信装置及び無線通信方法

Publications (1)

Publication Number Publication Date
JPWO2023188161A1 true JPWO2023188161A1 (https=) 2023-10-05

Family

ID=88199714

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024510934A Pending JPWO2023188161A1 (https=) 2022-03-30 2022-03-30

Country Status (4)

Country Link
US (1) US20250192735A1 (https=)
EP (1) EP4503447A4 (https=)
JP (1) JPWO2023188161A1 (https=)
WO (1) WO2023188161A1 (https=)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02116769A (ja) * 1988-10-27 1990-05-01 Tech Res & Dev Inst Of Japan Def Agency パルス送信装置
WO2012111274A1 (ja) * 2011-02-14 2012-08-23 パナソニック株式会社 高周波電力増幅器
JP2021121054A (ja) * 2020-01-30 2021-08-19 国立研究開発法人宇宙航空研究開発機構 増幅装置、送受信システム
JP2022018955A (ja) * 2020-07-16 2022-01-27 株式会社村田製作所 高周波モジュール及び通信装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012227795A (ja) 2011-04-21 2012-11-15 Toshiba Corp 電力増幅装置、電力増幅装置の入力バイアス電圧調整方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02116769A (ja) * 1988-10-27 1990-05-01 Tech Res & Dev Inst Of Japan Def Agency パルス送信装置
WO2012111274A1 (ja) * 2011-02-14 2012-08-23 パナソニック株式会社 高周波電力増幅器
JP2021121054A (ja) * 2020-01-30 2021-08-19 国立研究開発法人宇宙航空研究開発機構 増幅装置、送受信システム
JP2022018955A (ja) * 2020-07-16 2022-01-27 株式会社村田製作所 高周波モジュール及び通信装置

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
BARRADAS, FILIPE、他: "Compensation of Power Amplifier Long-Term Memory Behavior for Pulsed Radar Applications", IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES[ONLINE], JPN6025042765, 26 September 2019 (2019-09-26), pages 5249 - 5256, ISSN: 0005712610 *
CAPPELLO, TOMMASO、他: "Linearization of a 500-W L-band GaN Doherty Power Amplifier by Dual-Pulse Trap Characterization", 2019 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM[ONLINE], JPN6025042764, 2 June 2019 (2019-06-02), pages 905 - 908, ISSN: 0005712609 *
FLORIAN, CORRADO、他: "Pre-pulsing characterization of GaN PAs with dynamic supply", 2016 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM[ONLINE], JPN6025042766, 22 May 2016 (2016-05-22), ISSN: 0005712608 *

Also Published As

Publication number Publication date
WO2023188161A1 (ja) 2023-10-05
US20250192735A1 (en) 2025-06-12
EP4503447A1 (en) 2025-02-05
EP4503447A4 (en) 2025-05-21

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