JPWO2023149382A1 - - Google Patents

Info

Publication number
JPWO2023149382A1
JPWO2023149382A1 JP2023578538A JP2023578538A JPWO2023149382A1 JP WO2023149382 A1 JPWO2023149382 A1 JP WO2023149382A1 JP 2023578538 A JP2023578538 A JP 2023578538A JP 2023578538 A JP2023578538 A JP 2023578538A JP WO2023149382 A1 JPWO2023149382 A1 JP WO2023149382A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023578538A
Other languages
Japanese (ja)
Other versions
JPWO2023149382A5 (https=
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2023149382A1 publication Critical patent/JPWO2023149382A1/ja
Publication of JPWO2023149382A5 publication Critical patent/JPWO2023149382A5/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H04N25/773Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters comprising photon counting circuits, e.g. single photon detection [SPD] or single photon avalanche diodes [SPAD]
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/42Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44Electric circuits
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/42Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44Electric circuits
    • G01J1/46Electric circuits using a capacitor
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/42Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44Electric circuits
    • G01J2001/444Compensating; Calibrating, e.g. dark current, temperature drift, noise reduction or baseline correction; Adjusting
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/42Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44Electric circuits
    • G01J2001/4446Type of detector
    • G01J2001/446Photodiode
    • G01J2001/4466Avalanche

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Light Receiving Elements (AREA)
JP2023578538A 2022-02-01 2023-01-27 Pending JPWO2023149382A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022014282 2022-02-01
PCT/JP2023/002700 WO2023149382A1 (ja) 2022-02-01 2023-01-27 信号処理回路、及び、光検出装置

Publications (2)

Publication Number Publication Date
JPWO2023149382A1 true JPWO2023149382A1 (https=) 2023-08-10
JPWO2023149382A5 JPWO2023149382A5 (https=) 2024-10-11

Family

ID=87552375

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023578538A Pending JPWO2023149382A1 (https=) 2022-02-01 2023-01-27

Country Status (5)

Country Link
US (1) US20250116551A1 (https=)
JP (1) JPWO2023149382A1 (https=)
CN (1) CN118647844A (https=)
DE (1) DE112023000750T5 (https=)
WO (1) WO2023149382A1 (https=)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07306133A (ja) * 1994-03-14 1995-11-21 Hitachi Electron Eng Co Ltd 微粒子検出器
EP1875271B1 (en) * 2005-04-22 2011-06-22 Koninklijke Philips Electronics N.V. Digital silicon photomultiplier for tof-pet
US9568620B2 (en) 2014-09-22 2017-02-14 General Electric Company Solid state photomultiplier
JP7271091B2 (ja) * 2018-05-10 2023-05-11 浜松ホトニクス株式会社 裏面入射型半導体光検出装置
US10158038B1 (en) * 2018-05-17 2018-12-18 Hi Llc Fast-gated photodetector architectures comprising dual voltage sources with a switch configuration
JP7170448B2 (ja) * 2018-07-25 2022-11-14 キヤノン株式会社 撮像素子、撮像装置及び信号処理方法
US11340109B2 (en) * 2019-05-24 2022-05-24 Infineon Technologies Ag Array of single-photon avalanche diode (SPAD) microcells and operating the same
CN112945379B (zh) * 2021-02-03 2024-03-12 中国科学院长春光学精密机械与物理研究所 一种单光子探测器死时间设置与噪声滤除的系统

Also Published As

Publication number Publication date
DE112023000750T5 (de) 2024-11-21
CN118647844A (zh) 2024-09-13
US20250116551A1 (en) 2025-04-10
WO2023149382A1 (ja) 2023-08-10

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