JPWO2023144909A1 - - Google Patents
Info
- Publication number
- JPWO2023144909A1 JPWO2023144909A1 JP2023576309A JP2023576309A JPWO2023144909A1 JP WO2023144909 A1 JPWO2023144909 A1 JP WO2023144909A1 JP 2023576309 A JP2023576309 A JP 2023576309A JP 2023576309 A JP2023576309 A JP 2023576309A JP WO2023144909 A1 JPWO2023144909 A1 JP WO2023144909A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
- G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
- G01B15/04—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring contours or curvatures
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
- G01B15/02—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/0002—Inspection of images, e.g. flaw detection
- G06T7/0004—Industrial image inspection
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- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/60—Analysis of geometric attributes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
- H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
- G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/40—Imaging
- G01N2223/401—Imaging image processing
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/40—Imaging
- G01N2223/418—Imaging electron microscope
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/60—Specific applications or type of materials
- G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
- G01N2223/6116—Specific applications or type of materials patterned objects; electronic devices semiconductor wafer
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/60—Specific applications or type of materials
- G01N2223/633—Specific applications or type of materials thickness, density, surface weight (unit area)
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T2207/00—Indexing scheme for image analysis or image enhancement
- G06T2207/10—Image acquisition modality
- G06T2207/10056—Microscopic image
- G06T2207/10061—Microscopic image from scanning electron microscope
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T2207/00—Indexing scheme for image analysis or image enhancement
- G06T2207/30—Subject of image; Context of image processing
- G06T2207/30108—Industrial image inspection
- G06T2207/30148—Semiconductor; IC; Wafer
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- General Health & Medical Sciences (AREA)
- Biochemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Theoretical Computer Science (AREA)
- Geometry (AREA)
- Quality & Reliability (AREA)
- Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2022/002804 WO2023144909A1 (ja) | 2022-01-26 | 2022-01-26 | 異物高さの測定方法及び荷電粒子線装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023144909A1 true JPWO2023144909A1 (https=) | 2023-08-03 |
| JP7604684B2 JP7604684B2 (ja) | 2024-12-23 |
Family
ID=87471241
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023576309A Active JP7604684B2 (ja) | 2022-01-26 | 2022-01-26 | 異物高さの測定方法及び荷電粒子線装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20250003898A1 (https=) |
| JP (1) | JP7604684B2 (https=) |
| KR (1) | KR102853003B1 (https=) |
| DE (1) | DE112022004546T5 (https=) |
| WO (1) | WO2023144909A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2024106540A (ja) * | 2023-01-27 | 2024-08-08 | 株式会社ディスコ | 切削装置および切削方法 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6197510A (ja) * | 1984-10-19 | 1986-05-16 | Hitachi Ltd | 走査型電子顕微鏡による立体形状測定装置 |
| JP2004214060A (ja) * | 2003-01-06 | 2004-07-29 | Hitachi High-Technologies Corp | 走査電子顕微鏡及びそれを用いた試料観察方法 |
| JP2007129059A (ja) * | 2005-11-04 | 2007-05-24 | Hitachi High-Technologies Corp | 半導体デバイス製造プロセスモニタ装置および方法並びにパターンの断面形状推定方法及びその装置 |
| WO2019180760A1 (ja) * | 2018-03-19 | 2019-09-26 | 株式会社 日立ハイテクノロジーズ | パターン計測装置、及び計測を実行させるプログラムを記憶する非一時的なコンピュータ可読媒体 |
| WO2020075213A1 (ja) * | 2018-10-09 | 2020-04-16 | オリンパス株式会社 | 計測装置、計測方法および顕微鏡システム |
| WO2020157860A1 (ja) * | 2019-01-30 | 2020-08-06 | 株式会社日立ハイテク | 荷電粒子線システム及び荷電粒子線撮像方法 |
| WO2020166076A1 (ja) * | 2019-02-15 | 2020-08-20 | 株式会社日立ハイテク | 構造推定システム、構造推定プログラム |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6353222B1 (en) | 1998-09-03 | 2002-03-05 | Applied Materials, Inc. | Determining defect depth and contour information in wafer structures using multiple SEM images |
-
2022
- 2022-01-26 DE DE112022004546.9T patent/DE112022004546T5/de active Pending
- 2022-01-26 KR KR1020247018883A patent/KR102853003B1/ko active Active
- 2022-01-26 US US18/708,615 patent/US20250003898A1/en active Pending
- 2022-01-26 WO PCT/JP2022/002804 patent/WO2023144909A1/ja not_active Ceased
- 2022-01-26 JP JP2023576309A patent/JP7604684B2/ja active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6197510A (ja) * | 1984-10-19 | 1986-05-16 | Hitachi Ltd | 走査型電子顕微鏡による立体形状測定装置 |
| JP2004214060A (ja) * | 2003-01-06 | 2004-07-29 | Hitachi High-Technologies Corp | 走査電子顕微鏡及びそれを用いた試料観察方法 |
| JP2007129059A (ja) * | 2005-11-04 | 2007-05-24 | Hitachi High-Technologies Corp | 半導体デバイス製造プロセスモニタ装置および方法並びにパターンの断面形状推定方法及びその装置 |
| WO2019180760A1 (ja) * | 2018-03-19 | 2019-09-26 | 株式会社 日立ハイテクノロジーズ | パターン計測装置、及び計測を実行させるプログラムを記憶する非一時的なコンピュータ可読媒体 |
| WO2020075213A1 (ja) * | 2018-10-09 | 2020-04-16 | オリンパス株式会社 | 計測装置、計測方法および顕微鏡システム |
| WO2020157860A1 (ja) * | 2019-01-30 | 2020-08-06 | 株式会社日立ハイテク | 荷電粒子線システム及び荷電粒子線撮像方法 |
| WO2020166076A1 (ja) * | 2019-02-15 | 2020-08-20 | 株式会社日立ハイテク | 構造推定システム、構造推定プログラム |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7604684B2 (ja) | 2024-12-23 |
| KR20240104150A (ko) | 2024-07-04 |
| DE112022004546T5 (de) | 2024-08-14 |
| WO2023144909A1 (ja) | 2023-08-03 |
| KR102853003B1 (ko) | 2025-09-01 |
| US20250003898A1 (en) | 2025-01-02 |
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