JPWO2023079726A1 - - Google Patents

Info

Publication number
JPWO2023079726A1
JPWO2023079726A1 JP2022502068A JP2022502068A JPWO2023079726A1 JP WO2023079726 A1 JPWO2023079726 A1 JP WO2023079726A1 JP 2022502068 A JP2022502068 A JP 2022502068A JP 2022502068 A JP2022502068 A JP 2022502068A JP WO2023079726 A1 JPWO2023079726 A1 JP WO2023079726A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022502068A
Other languages
Japanese (ja)
Other versions
JP7046294B1 (ja
JPWO2023079726A5 (https=
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Application granted granted Critical
Publication of JP7046294B1 publication Critical patent/JP7046294B1/ja
Publication of JPWO2023079726A1 publication Critical patent/JPWO2023079726A1/ja
Publication of JPWO2023079726A5 publication Critical patent/JPWO2023079726A5/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Device Packages (AREA)
JP2022502068A 2021-11-08 2021-11-08 光半導体装置 Active JP7046294B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/040924 WO2023079726A1 (ja) 2021-11-08 2021-11-08 光半導体装置

Publications (3)

Publication Number Publication Date
JP7046294B1 JP7046294B1 (ja) 2022-04-01
JPWO2023079726A1 true JPWO2023079726A1 (https=) 2023-05-11
JPWO2023079726A5 JPWO2023079726A5 (https=) 2023-10-03

Family

ID=81255864

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022502068A Active JP7046294B1 (ja) 2021-11-08 2021-11-08 光半導体装置

Country Status (4)

Country Link
US (1) US20250038474A1 (https=)
JP (1) JP7046294B1 (https=)
CN (1) CN118120121A (https=)
WO (1) WO2023079726A1 (https=)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11317565A (ja) * 1998-05-07 1999-11-16 Toshiba Corp 半導体表面処理用治具
JP4288620B2 (ja) * 2006-11-10 2009-07-01 ソニー株式会社 半導体発光素子およびその製造方法
JP4930322B2 (ja) * 2006-11-10 2012-05-16 ソニー株式会社 半導体発光素子、光ピックアップ装置および情報記録再生装置
EP3125008A1 (en) * 2015-07-29 2017-02-01 CCS Technology Inc. Method to manufacture optoelectronic modules
JP7241572B2 (ja) * 2019-03-08 2023-03-17 日本ルメンタム株式会社 半導体光素子、光モジュール、及び半導体光素子の製造方法

Also Published As

Publication number Publication date
JP7046294B1 (ja) 2022-04-01
WO2023079726A1 (ja) 2023-05-11
CN118120121A (zh) 2024-05-31
US20250038474A1 (en) 2025-01-30

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