JPWO2023021814A1 - - Google Patents
Info
- Publication number
- JPWO2023021814A1 JPWO2023021814A1 JP2023542233A JP2023542233A JPWO2023021814A1 JP WO2023021814 A1 JPWO2023021814 A1 JP WO2023021814A1 JP 2023542233 A JP2023542233 A JP 2023542233A JP 2023542233 A JP2023542233 A JP 2023542233A JP WO2023021814 A1 JPWO2023021814 A1 JP WO2023021814A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021135162 | 2021-08-20 | ||
| JP2021135162 | 2021-08-20 | ||
| PCT/JP2022/023026 WO2023021814A1 (ja) | 2021-08-20 | 2022-06-07 | 積層体 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023021814A1 true JPWO2023021814A1 (https=) | 2023-02-23 |
| JP7612029B2 JP7612029B2 (ja) | 2025-01-10 |
Family
ID=85240437
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023542233A Active JP7612029B2 (ja) | 2021-08-20 | 2022-06-07 | 積層体 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP7612029B2 (https=) |
| WO (1) | WO2023021814A1 (https=) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019012826A (ja) * | 2017-06-30 | 2019-01-24 | 国立研究開発法人物質・材料研究機構 | ガリウム窒化物半導体基板、ガリウム窒化物半導体装置、撮像素子およびそれらの製造方法 |
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2022
- 2022-06-07 JP JP2023542233A patent/JP7612029B2/ja active Active
- 2022-06-07 WO PCT/JP2022/023026 patent/WO2023021814A1/ja not_active Ceased
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019012826A (ja) * | 2017-06-30 | 2019-01-24 | 国立研究開発法人物質・材料研究機構 | ガリウム窒化物半導体基板、ガリウム窒化物半導体装置、撮像素子およびそれらの製造方法 |
Non-Patent Citations (5)
| Title |
|---|
| BOSCHI ET AL.: "Hetero-epitaxy of ε-Ga2O3 layers by MOCVD and ALD", JOURNAL OF CRYSTAL GROWTH, vol. 443, JPN6022034191, 2016, pages 25 - 30, ISSN: 0005473298 * |
| LEONE ET AL.: "Epitaxial growth of GaN/Ga2O3 and Ga2O3/GaN heterostructures for novel high electron mobility transi", JOURNAL OF CRYSTAL GROWTH, vol. 534, JPN6022034192, 2020, pages 1 - 6, ISSN: 0005473300 * |
| NIKOLAEV ET AL.: "HVPE Growth and Characterization of ε-Ga2O3 Films on Various Substrates", ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, vol. 9, JPN7022003955, 2020, pages 045014, ISSN: 0005473296 * |
| NISHINAKA ET AL.: "Microstructures and rotational domains in orthorhombic ε-Ga2O3 thin films", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 57, JPN6022034190, 2018, pages 1 - 7, ISSN: 0005473297 * |
| YUICHI OSHIMA: "Epitaxial growth of phase-pure ε-Ga2O3 by halide vapor phase epitaxy", JOURNAL OF APPLIED PHYSICS, vol. 118, JPN7022000567, 24 August 2015 (2015-08-24), US, pages 1 - 085301, ISSN: 0005473299 * |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7612029B2 (ja) | 2025-01-10 |
| WO2023021814A1 (ja) | 2023-02-23 |
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