JPWO2022215663A1 - - Google Patents
Info
- Publication number
- JPWO2022215663A1 JPWO2022215663A1 JP2023513005A JP2023513005A JPWO2022215663A1 JP WO2022215663 A1 JPWO2022215663 A1 JP WO2022215663A1 JP 2023513005 A JP2023513005 A JP 2023513005A JP 2023513005 A JP2023513005 A JP 2023513005A JP WO2022215663 A1 JPWO2022215663 A1 JP WO2022215663A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C11/00—Multi-cellular glass ; Porous or hollow glass or glass particles
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/06—Glass compositions containing silica with more than 90% silica by weight, e.g. quartz
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/10—Forming beads
- C03B19/1005—Forming solid beads
- C03B19/106—Forming solid beads by chemical vapour deposition; by liquid phase reaction
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/14—Other methods of shaping glass by gas- or vapour- phase reaction processes
- C03B19/1453—Thermal after-treatment of the shaped article, e.g. dehydrating, consolidating, sintering
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B20/00—Processes specially adapted for the production of quartz or fused silica articles, not otherwise provided for
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B32/00—Thermal after-treatment of glass products not provided for in groups C03B19/00, C03B25/00 - C03B31/00 or C03B37/00, e.g. crystallisation, eliminating gas inclusions or other impurities; Hot-pressing vitrified, non-porous, shaped glass products
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B2201/00—Type of glass produced
- C03B2201/02—Pure silica glass, e.g. pure fused quartz
- C03B2201/03—Impurity concentration specified
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2201/00—Glass compositions
- C03C2201/02—Pure silica glass, e.g. pure fused quartz
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2201/00—Glass compositions
- C03C2201/80—Glass compositions containing bubbles or microbubbles, e.g. opaque quartz glass
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2203/00—Production processes
- C03C2203/40—Gas-phase processes
- C03C2203/42—Gas-phase processes using silicon halides as starting materials
- C03C2203/44—Gas-phase processes using silicon halides as starting materials chlorine containing
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2203/00—Production processes
- C03C2203/50—After-treatment
- C03C2203/52—Heat-treatment
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Geochemistry & Mineralogy (AREA)
- General Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Glass Melting And Manufacturing (AREA)
- Glass Compositions (AREA)
- Plasma & Fusion (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021065433 | 2021-04-07 | ||
| JP2021135895 | 2021-08-23 | ||
| PCT/JP2022/016901 WO2022215663A1 (ja) | 2021-04-07 | 2022-03-31 | シリカガラス部材およびその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2022215663A1 true JPWO2022215663A1 (https=) | 2022-10-13 |
Family
ID=83546077
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023513005A Pending JPWO2022215663A1 (https=) | 2021-04-07 | 2022-03-31 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20240025795A1 (https=) |
| JP (1) | JPWO2022215663A1 (https=) |
| KR (1) | KR20230167358A (https=) |
| DE (1) | DE112022002001T5 (https=) |
| TW (1) | TW202306917A (https=) |
| WO (1) | WO2022215663A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102825674B1 (ko) | 2024-05-31 | 2025-06-26 | 신에쯔 세끼에이 가부시키가이샤 | 성막 처리 가스 노출용 석영 유리 부재 및 이의 제조 방법 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0614480Y2 (ja) * | 1988-04-26 | 1994-04-13 | 信越石英株式会社 | 半導体熱処理装置 |
| JPH1029836A (ja) * | 1996-07-15 | 1998-02-03 | Shinetsu Quartz Prod Co Ltd | 石英ガラス発泡体の製造方法 |
| JPH1192167A (ja) * | 1997-09-22 | 1999-04-06 | Toshiba Ceramics Co Ltd | 多孔質石英ガラスおよびその製造方法 |
| JP2002362967A (ja) * | 2001-06-06 | 2002-12-18 | Koransha Co Ltd | シリカガラス焼結体からなる半導体ウエハエッチング用部材とその製造方法 |
| JP2007238419A (ja) * | 2006-03-13 | 2007-09-20 | Tosoh Quartz Corp | 不透明焼結体 |
| JP2015173154A (ja) * | 2014-03-11 | 2015-10-01 | 東京エレクトロン株式会社 | 縦型熱処理装置、縦型熱処理装置の運転方法及び記憶媒体 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2571181B2 (ja) * | 1992-11-24 | 1997-01-16 | 日東化学工業株式会社 | 石英ガラス多孔質成形体およびその製造方法 |
| JP2829227B2 (ja) * | 1993-08-24 | 1998-11-25 | 信越石英株式会社 | 不透明石英ガラス |
| JP2021065433A (ja) | 2019-10-23 | 2021-04-30 | 日本製紙クレシア株式会社 | 吸収性物品 |
| JP2021135895A (ja) | 2020-02-28 | 2021-09-13 | 三菱重工業株式会社 | 検知装置、検知方法、およびロボット並びにプログラム |
-
2022
- 2022-03-31 DE DE112022002001.6T patent/DE112022002001T5/de active Pending
- 2022-03-31 KR KR1020237033332A patent/KR20230167358A/ko active Pending
- 2022-03-31 JP JP2023513005A patent/JPWO2022215663A1/ja active Pending
- 2022-03-31 WO PCT/JP2022/016901 patent/WO2022215663A1/ja not_active Ceased
- 2022-04-01 TW TW111112902A patent/TW202306917A/zh unknown
-
2023
- 2023-10-03 US US18/479,852 patent/US20240025795A1/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0614480Y2 (ja) * | 1988-04-26 | 1994-04-13 | 信越石英株式会社 | 半導体熱処理装置 |
| JPH1029836A (ja) * | 1996-07-15 | 1998-02-03 | Shinetsu Quartz Prod Co Ltd | 石英ガラス発泡体の製造方法 |
| JPH1192167A (ja) * | 1997-09-22 | 1999-04-06 | Toshiba Ceramics Co Ltd | 多孔質石英ガラスおよびその製造方法 |
| JP2002362967A (ja) * | 2001-06-06 | 2002-12-18 | Koransha Co Ltd | シリカガラス焼結体からなる半導体ウエハエッチング用部材とその製造方法 |
| JP2007238419A (ja) * | 2006-03-13 | 2007-09-20 | Tosoh Quartz Corp | 不透明焼結体 |
| JP2015173154A (ja) * | 2014-03-11 | 2015-10-01 | 東京エレクトロン株式会社 | 縦型熱処理装置、縦型熱処理装置の運転方法及び記憶媒体 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE112022002001T5 (de) | 2024-01-18 |
| TW202306917A (zh) | 2023-02-16 |
| US20240025795A1 (en) | 2024-01-25 |
| KR20230167358A (ko) | 2023-12-08 |
| WO2022215663A1 (ja) | 2022-10-13 |
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