JPWO2022091922A1 - - Google Patents

Info

Publication number
JPWO2022091922A1
JPWO2022091922A1 JP2022559064A JP2022559064A JPWO2022091922A1 JP WO2022091922 A1 JPWO2022091922 A1 JP WO2022091922A1 JP 2022559064 A JP2022559064 A JP 2022559064A JP 2022559064 A JP2022559064 A JP 2022559064A JP WO2022091922 A1 JPWO2022091922 A1 JP WO2022091922A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022559064A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2022091922A1 publication Critical patent/JPWO2022091922A1/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/08Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/30Stacked capacitors
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/5387Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K5/00Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/22Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral
    • H03K5/24Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K4/00Generating pulses having essentially a finite slope or stepped portions
    • H03K4/06Generating pulses having essentially a finite slope or stepped portions having triangular shape
    • H03K4/08Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape
    • H03K4/48Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices
    • H03K4/50Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices in which a sawtooth voltage is produced across a capacitor
    • H03K4/501Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices in which a sawtooth voltage is produced across a capacitor the starting point of the flyback period being determined by the amplitude of the voltage across the capacitor, e.g. by a comparator
    • H03K4/502Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices in which a sawtooth voltage is produced across a capacitor the starting point of the flyback period being determined by the amplitude of the voltage across the capacitor, e.g. by a comparator the capacitor being charged from a constant-current source
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04LTRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L25/00Baseband systems
    • H04L25/02Details ; arrangements for supplying electrical power along data transmission lines
    • H04L25/0264Arrangements for coupling to transmission lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2022559064A 2020-10-28 2021-10-21 Pending JPWO2022091922A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020180323 2020-10-28
PCT/JP2021/038884 WO2022091922A1 (ja) 2020-10-28 2021-10-21 信号伝達装置、電子機器、車両

Publications (1)

Publication Number Publication Date
JPWO2022091922A1 true JPWO2022091922A1 (https=) 2022-05-05

Family

ID=81382370

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022559064A Pending JPWO2022091922A1 (https=) 2020-10-28 2021-10-21

Country Status (5)

Country Link
US (1) US12143100B2 (https=)
JP (1) JPWO2022091922A1 (https=)
CN (1) CN116325508A (https=)
DE (1) DE112021004682T5 (https=)
WO (1) WO2022091922A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112021003946B4 (de) * 2020-09-24 2024-08-08 Rohm Co., Ltd. Signalübertragungsvorrichtung, elektronische Vorrichtung und Fahrzeug
WO2023248622A1 (ja) * 2022-06-24 2023-12-28 ローム株式会社 受信回路、信号伝達装置
JP2024006287A (ja) * 2022-07-01 2024-01-17 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02210859A (ja) * 1988-10-13 1990-08-22 Crystal Semiconductor Corp アナログ―デジタルコンバータのためのデルタ―シグマ変調器
US6069050A (en) * 1997-10-20 2000-05-30 Taiwan Semiconductor Manufacturing Company Cross-coupled capacitors for improved voltage coefficient
JP2002151649A (ja) * 2000-11-13 2002-05-24 Sharp Corp 半導体容量装置
JP2006319446A (ja) * 2005-05-10 2006-11-24 Toyota Industries Corp 分周回路
JP2010199490A (ja) * 2009-02-27 2010-09-09 Fuji Electric Systems Co Ltd パワー半導体装置の温度測定装置およびこれを使用したパワー半導体モジュール
WO2010113383A1 (ja) * 2009-03-31 2010-10-07 日本電気株式会社 半導体装置
JP2013078228A (ja) * 2011-09-30 2013-04-25 Shindengen Electric Mfg Co Ltd スイッチング電源装置
JP2013150456A (ja) * 2012-01-19 2013-08-01 Rohm Co Ltd Dc/dcコンバータおよびその制御回路、それを用いた電源装置、電源アダプタおよび電子機器
JP2018011108A (ja) * 2016-07-11 2018-01-18 三菱電機株式会社 信号伝達装置、および、電力スイッチング素子駆動装置
JP2018082325A (ja) * 2016-11-17 2018-05-24 株式会社ノーリツ 三角波生成回路、並びに、ファンモータ電流検出装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1351389A1 (en) 2002-04-02 2003-10-08 Dialog Semiconductor GmbH Method and circuit for compensating mosfet capacitance variations in integrated circuits
KR100480603B1 (ko) 2002-07-19 2005-04-06 삼성전자주식회사 일정한 커패시턴스를 갖는 금속-절연체-금속 커패시터를 포함하는 반도체 소자
JP4528841B2 (ja) * 2008-03-12 2010-08-25 日立オートモティブシステムズ株式会社 電力変換装置
WO2011036428A1 (en) 2009-09-23 2011-03-31 X-Fab Semiconductor Foundries Ag Ultra-low voltage coefficient capacitors
CN102783005A (zh) * 2009-12-28 2012-11-14 汤姆森特许公司 同步整流器禁用装置
JP6104512B2 (ja) 2011-04-01 2017-03-29 ローム株式会社 温度検出装置
WO2012177873A2 (en) 2011-06-22 2012-12-27 Arkansas Power Electronics International, Inc. High temperature half bridge gate driver
JP5714455B2 (ja) 2011-08-31 2015-05-07 ルネサスエレクトロニクス株式会社 半導体集積回路
US20170317529A1 (en) * 2012-05-21 2017-11-02 University Of Washington Distributed control adaptive wireless power transfer system
JP5964183B2 (ja) 2012-09-05 2016-08-03 ルネサスエレクトロニクス株式会社 半導体装置
US11811396B2 (en) * 2021-09-30 2023-11-07 Infineon Technologies Austria Ag Power transfer, gate drive, and/or protection functions across an isolation barrier

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02210859A (ja) * 1988-10-13 1990-08-22 Crystal Semiconductor Corp アナログ―デジタルコンバータのためのデルタ―シグマ変調器
US6069050A (en) * 1997-10-20 2000-05-30 Taiwan Semiconductor Manufacturing Company Cross-coupled capacitors for improved voltage coefficient
JP2002151649A (ja) * 2000-11-13 2002-05-24 Sharp Corp 半導体容量装置
JP2006319446A (ja) * 2005-05-10 2006-11-24 Toyota Industries Corp 分周回路
JP2010199490A (ja) * 2009-02-27 2010-09-09 Fuji Electric Systems Co Ltd パワー半導体装置の温度測定装置およびこれを使用したパワー半導体モジュール
WO2010113383A1 (ja) * 2009-03-31 2010-10-07 日本電気株式会社 半導体装置
JP2013078228A (ja) * 2011-09-30 2013-04-25 Shindengen Electric Mfg Co Ltd スイッチング電源装置
JP2013150456A (ja) * 2012-01-19 2013-08-01 Rohm Co Ltd Dc/dcコンバータおよびその制御回路、それを用いた電源装置、電源アダプタおよび電子機器
JP2018011108A (ja) * 2016-07-11 2018-01-18 三菱電機株式会社 信号伝達装置、および、電力スイッチング素子駆動装置
JP2018082325A (ja) * 2016-11-17 2018-05-24 株式会社ノーリツ 三角波生成回路、並びに、ファンモータ電流検出装置

Also Published As

Publication number Publication date
US12143100B2 (en) 2024-11-12
DE112021004682T5 (de) 2023-07-20
US20240007100A1 (en) 2024-01-04
CN116325508A (zh) 2023-06-23
WO2022091922A1 (ja) 2022-05-05

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