JPWO2022084795A1 - - Google Patents
Info
- Publication number
- JPWO2022084795A1 JPWO2022084795A1 JP2022557215A JP2022557215A JPWO2022084795A1 JP WO2022084795 A1 JPWO2022084795 A1 JP WO2022084795A1 JP 2022557215 A JP2022557215 A JP 2022557215A JP 2022557215 A JP2022557215 A JP 2022557215A JP WO2022084795 A1 JPWO2022084795 A1 JP WO2022084795A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G2/00—Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00
- H01G2/10—Housing; Encapsulation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/20—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the three-dimensional [3D] arrangements, e.g. with cells on different height levels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020176335 | 2020-10-20 | ||
| PCT/IB2021/059272 WO2022084795A1 (ja) | 2020-10-20 | 2021-10-11 | 強誘電体デバイス、および半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2022084795A1 true JPWO2022084795A1 (https=) | 2022-04-28 |
| JPWO2022084795A5 JPWO2022084795A5 (https=) | 2024-10-18 |
Family
ID=81289710
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022557215A Pending JPWO2022084795A1 (https=) | 2020-10-20 | 2021-10-11 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20230389332A1 (https=) |
| JP (1) | JPWO2022084795A1 (https=) |
| KR (1) | KR20230091923A (https=) |
| CN (1) | CN116803231A (https=) |
| WO (1) | WO2022084795A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116056553B (zh) * | 2023-01-19 | 2025-10-28 | 河北大学 | 基于氮化铝钪的铁电忆阻器、其制备方法及应用 |
| US20250275209A1 (en) * | 2024-02-28 | 2025-08-28 | Tetramem Inc. | Deuterium-treated ferroelectric devices and methods for fabricating the same |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11251535A (ja) * | 1998-02-27 | 1999-09-17 | Fujitsu Ltd | 半導体装置およびその製造方法 |
| JP2001223342A (ja) * | 1999-12-22 | 2001-08-17 | Texas Instr Inc <Ti> | 半導体デバイスの強誘電性コンデンサ下に位置する導電性プラグを平坦化する方法 |
| US20030230773A1 (en) * | 2002-06-14 | 2003-12-18 | Fujitsu Limited | Ferroelectric capacitor, process for manufacturing thereof and ferroelectric memory |
| JP2010251590A (ja) * | 2009-04-17 | 2010-11-04 | Seiko Epson Corp | 半導体装置とその製造方法 |
| WO2011078398A1 (en) * | 2009-12-25 | 2011-06-30 | Ricoh Company, Ltd. | Field-effect transistor, semiconductor memory, display element, image display device, and system |
| JP2011151370A (ja) * | 2009-12-25 | 2011-08-04 | Ricoh Co Ltd | 電界効果型トランジスタ、半導体メモリ、表示素子、画像表示装置及びシステム |
| US20110278571A1 (en) * | 2010-05-14 | 2011-11-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP2017123388A (ja) * | 2016-01-06 | 2017-07-13 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
| US20190207009A1 (en) * | 2017-12-28 | 2019-07-04 | Renesas Electronics Corporation | Semiconductor device and manufacturing method thereof |
| WO2019171884A1 (ja) * | 2018-03-07 | 2019-09-12 | ソニーセミコンダクタソリューションズ株式会社 | 半導体記憶装置、半導体記憶装置の製造方法及び電子機器 |
| US20200251551A1 (en) * | 2019-02-01 | 2020-08-06 | Fujitsu Semiconductor Limited | Semiconductor device fabrication method and semiconductor device |
-
2021
- 2021-10-11 WO PCT/IB2021/059272 patent/WO2022084795A1/ja not_active Ceased
- 2021-10-11 KR KR1020237015842A patent/KR20230091923A/ko active Pending
- 2021-10-11 JP JP2022557215A patent/JPWO2022084795A1/ja active Pending
- 2021-10-11 CN CN202180068990.0A patent/CN116803231A/zh active Pending
- 2021-10-11 US US18/032,651 patent/US20230389332A1/en active Pending
Patent Citations (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11251535A (ja) * | 1998-02-27 | 1999-09-17 | Fujitsu Ltd | 半導体装置およびその製造方法 |
| JP2001223342A (ja) * | 1999-12-22 | 2001-08-17 | Texas Instr Inc <Ti> | 半導体デバイスの強誘電性コンデンサ下に位置する導電性プラグを平坦化する方法 |
| US20010044205A1 (en) * | 1999-12-22 | 2001-11-22 | Gilbert Stephen R. | Method of planarizing a conductive plug situated under a ferroelectric capacitor |
| US20030230773A1 (en) * | 2002-06-14 | 2003-12-18 | Fujitsu Limited | Ferroelectric capacitor, process for manufacturing thereof and ferroelectric memory |
| JP2004022702A (ja) * | 2002-06-14 | 2004-01-22 | Fujitsu Ltd | 強誘電体キャパシタ及びその製造方法並びに強誘電体メモリ |
| JP2010251590A (ja) * | 2009-04-17 | 2010-11-04 | Seiko Epson Corp | 半導体装置とその製造方法 |
| WO2011078398A1 (en) * | 2009-12-25 | 2011-06-30 | Ricoh Company, Ltd. | Field-effect transistor, semiconductor memory, display element, image display device, and system |
| JP2011151370A (ja) * | 2009-12-25 | 2011-08-04 | Ricoh Co Ltd | 電界効果型トランジスタ、半導体メモリ、表示素子、画像表示装置及びシステム |
| US20120248451A1 (en) * | 2009-12-25 | 2012-10-04 | Yuji Sone | Field-effect transistor, semiconductor memory display element, image display device, and system |
| JP2011258940A (ja) * | 2010-05-14 | 2011-12-22 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| WO2011142371A1 (en) * | 2010-05-14 | 2011-11-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US20110278571A1 (en) * | 2010-05-14 | 2011-11-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP2017123388A (ja) * | 2016-01-06 | 2017-07-13 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
| US20190207009A1 (en) * | 2017-12-28 | 2019-07-04 | Renesas Electronics Corporation | Semiconductor device and manufacturing method thereof |
| JP2019121633A (ja) * | 2017-12-28 | 2019-07-22 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| WO2019171884A1 (ja) * | 2018-03-07 | 2019-09-12 | ソニーセミコンダクタソリューションズ株式会社 | 半導体記憶装置、半導体記憶装置の製造方法及び電子機器 |
| JP2019160841A (ja) * | 2018-03-07 | 2019-09-19 | ソニーセミコンダクタソリューションズ株式会社 | 半導体記憶装置、半導体記憶装置の製造方法及び電子機器 |
| US20210013218A1 (en) * | 2018-03-07 | 2021-01-14 | Sony Semiconductor Solutions Corporation | Semiconductor storage device, manufacturing method of semiconductor storage device, and electronic device |
| US20200251551A1 (en) * | 2019-02-01 | 2020-08-06 | Fujitsu Semiconductor Limited | Semiconductor device fabrication method and semiconductor device |
| JP2020126866A (ja) * | 2019-02-01 | 2020-08-20 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法及び半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2022084795A1 (ja) | 2022-04-28 |
| KR20230091923A (ko) | 2023-06-23 |
| CN116803231A (zh) | 2023-09-22 |
| US20230389332A1 (en) | 2023-11-30 |
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