JPWO2022059528A1 - - Google Patents
Info
- Publication number
- JPWO2022059528A1 JPWO2022059528A1 JP2022550477A JP2022550477A JPWO2022059528A1 JP WO2022059528 A1 JPWO2022059528 A1 JP WO2022059528A1 JP 2022550477 A JP2022550477 A JP 2022550477A JP 2022550477 A JP2022550477 A JP 2022550477A JP WO2022059528 A1 JPWO2022059528 A1 JP WO2022059528A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
- H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
- H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/018—Bonding of wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
- H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
- H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0364—Manufacture or treatment of packages of interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
- H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
- H10H20/8512—Wavelength conversion materials
- H10H20/8513—Wavelength conversion materials having two or more wavelength conversion materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8515—Wavelength conversion means not being in contact with the bodies
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020156726 | 2020-09-17 | ||
| JP2020156726 | 2020-09-17 | ||
| PCT/JP2021/032529 WO2022059528A1 (ja) | 2020-09-17 | 2021-09-03 | 画像表示装置の製造方法および画像表示装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2022059528A1 true JPWO2022059528A1 (https=) | 2022-03-24 |
| JP7669643B2 JP7669643B2 (ja) | 2025-04-30 |
Family
ID=80776955
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022550477A Active JP7669643B2 (ja) | 2020-09-17 | 2021-09-03 | 画像表示装置の製造方法および画像表示装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20230215907A1 (https=) |
| EP (1) | EP4216290A4 (https=) |
| JP (1) | JP7669643B2 (https=) |
| CN (1) | CN116195075A (https=) |
| TW (1) | TWI882173B (https=) |
| WO (1) | WO2022059528A1 (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022113949A1 (ja) * | 2020-11-25 | 2022-06-02 | 日亜化学工業株式会社 | 画像表示装置の製造方法および画像表示装置 |
| US12074146B2 (en) * | 2021-12-03 | 2024-08-27 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Display panel and manufacturing method thereof |
| CN114203734B (zh) * | 2021-12-11 | 2023-08-22 | 武汉华星光电半导体显示技术有限公司 | 显示面板及其制备方法 |
| KR20250002105A (ko) * | 2022-04-20 | 2025-01-07 | 도레이 카부시키가이샤 | 표시 장치 |
| TWI865239B (zh) * | 2023-12-11 | 2024-12-01 | 友達光電股份有限公司 | 顯示裝置 |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002141492A (ja) * | 2000-10-31 | 2002-05-17 | Canon Inc | 発光ダイオードディスプレイパネル及びその製造方法 |
| JP2007242645A (ja) * | 2006-03-03 | 2007-09-20 | Rohm Co Ltd | 窒化物半導体発光素子及びその製造方法 |
| JP2008159767A (ja) * | 2006-12-22 | 2008-07-10 | Oki Data Corp | 発光表示装置 |
| US20090078963A1 (en) * | 2007-07-09 | 2009-03-26 | Salah Khodja | Nano-optoelectronic chip structure and method |
| JP2009111371A (ja) * | 2007-10-10 | 2009-05-21 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP2010219310A (ja) * | 2009-03-17 | 2010-09-30 | Sharp Corp | 光デバイスおよび光デバイス構造 |
| US20180233536A1 (en) * | 2014-10-17 | 2018-08-16 | Intel Corporation | Microled display & assembly |
| US20180259570A1 (en) * | 2017-01-23 | 2018-09-13 | Tesoro Scientific, Inc. | Light emitting diode (led) test apparatus and method of manufacture |
| US20190157523A1 (en) * | 2017-11-20 | 2019-05-23 | Kaistar Lighting (Xiamen) Co., Ltd. | Micro led display device and method for manufacturing same |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI505473B (zh) * | 2005-01-28 | 2015-10-21 | 半導體能源研究所股份有限公司 | 半導體裝置，電子裝置，和半導體裝置的製造方法 |
| US20120242624A1 (en) * | 2009-11-27 | 2012-09-27 | Sharp Kabushiki Kaisha | Thin film transistor and method for fabricating the same, semiconductor device and method for fabricating the same, as well as display |
| CN102822734B (zh) * | 2010-04-16 | 2015-01-21 | 夏普株式会社 | 电子基板的制造方法、液晶显示装置的制造方法、电子基板以及液晶显示装置 |
| TWI552321B (zh) * | 2014-09-30 | 2016-10-01 | 群創光電股份有限公司 | 顯示面板及顯示裝置 |
| US9871060B2 (en) * | 2015-02-16 | 2018-01-16 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device |
| US11239394B2 (en) * | 2016-03-18 | 2022-02-01 | Lg Innotek Co., Ltd. | Semiconductor device and display device including the same |
| KR102631260B1 (ko) * | 2016-04-08 | 2024-01-31 | 삼성디스플레이 주식회사 | 표시장치 및 표시장치 제조방법 |
| WO2019225708A1 (ja) * | 2018-05-25 | 2019-11-28 | 大日本印刷株式会社 | 表示装置用配線基板および表示装置、ならびに配線基板とその作製方法 |
| KR102698293B1 (ko) * | 2018-11-27 | 2024-08-23 | 삼성전자주식회사 | 디스플레이 장치 및 제조 방법 |
| JP7457255B2 (ja) * | 2019-05-08 | 2024-03-28 | 日亜化学工業株式会社 | 画像表示装置の製造方法および画像表示装置 |
-
2021
- 2021-09-03 EP EP21869215.0A patent/EP4216290A4/en active Pending
- 2021-09-03 CN CN202180059966.0A patent/CN116195075A/zh active Pending
- 2021-09-03 WO PCT/JP2021/032529 patent/WO2022059528A1/ja not_active Ceased
- 2021-09-03 JP JP2022550477A patent/JP7669643B2/ja active Active
- 2021-09-13 TW TW110133954A patent/TWI882173B/zh active
-
2023
- 2023-03-01 US US18/176,697 patent/US20230215907A1/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002141492A (ja) * | 2000-10-31 | 2002-05-17 | Canon Inc | 発光ダイオードディスプレイパネル及びその製造方法 |
| JP2007242645A (ja) * | 2006-03-03 | 2007-09-20 | Rohm Co Ltd | 窒化物半導体発光素子及びその製造方法 |
| JP2008159767A (ja) * | 2006-12-22 | 2008-07-10 | Oki Data Corp | 発光表示装置 |
| US20090078963A1 (en) * | 2007-07-09 | 2009-03-26 | Salah Khodja | Nano-optoelectronic chip structure and method |
| JP2009111371A (ja) * | 2007-10-10 | 2009-05-21 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP2010219310A (ja) * | 2009-03-17 | 2010-09-30 | Sharp Corp | 光デバイスおよび光デバイス構造 |
| US20180233536A1 (en) * | 2014-10-17 | 2018-08-16 | Intel Corporation | Microled display & assembly |
| US20180259570A1 (en) * | 2017-01-23 | 2018-09-13 | Tesoro Scientific, Inc. | Light emitting diode (led) test apparatus and method of manufacture |
| US20190157523A1 (en) * | 2017-11-20 | 2019-05-23 | Kaistar Lighting (Xiamen) Co., Ltd. | Micro led display device and method for manufacturing same |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2022059528A1 (ja) | 2022-03-24 |
| EP4216290A1 (en) | 2023-07-26 |
| US20230215907A1 (en) | 2023-07-06 |
| TWI882173B (zh) | 2025-05-01 |
| JP7669643B2 (ja) | 2025-04-30 |
| TW202230311A (zh) | 2022-08-01 |
| EP4216290A4 (en) | 2024-10-23 |
| CN116195075A (zh) | 2023-05-30 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20240805 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20250317 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20250330 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 7669643 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |