JPWO2022043165A5 - - Google Patents
Download PDFInfo
- Publication number
- JPWO2022043165A5 JPWO2022043165A5 JP2023513264A JP2023513264A JPWO2022043165A5 JP WO2022043165 A5 JPWO2022043165 A5 JP WO2022043165A5 JP 2023513264 A JP2023513264 A JP 2023513264A JP 2023513264 A JP2023513264 A JP 2023513264A JP WO2022043165 A5 JPWO2022043165 A5 JP WO2022043165A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- composition according
- silicon
- group
- fluoride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP20192464.4 | 2020-08-24 | ||
| EP20192464 | 2020-08-24 | ||
| PCT/EP2021/072975 WO2022043165A1 (en) | 2020-08-24 | 2021-08-18 | Composition, its use and a process for selectively etching silicon-germanium material |
Publications (4)
| Publication Number | Publication Date |
|---|---|
| JP2023539238A JP2023539238A (ja) | 2023-09-13 |
| JP2023539238A5 JP2023539238A5 (https=) | 2024-08-27 |
| JPWO2022043165A5 true JPWO2022043165A5 (https=) | 2024-08-27 |
| JP7754920B2 JP7754920B2 (ja) | 2025-10-15 |
Family
ID=72240282
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023513264A Active JP7754920B2 (ja) | 2020-08-24 | 2021-08-18 | ケイ素－ゲルマニウム材料の選択的エッチングのための組成物、その使用及び方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20230326759A1 (https=) |
| EP (1) | EP4200895A1 (https=) |
| JP (1) | JP7754920B2 (https=) |
| KR (1) | KR20230054674A (https=) |
| CN (1) | CN116195036A (https=) |
| IL (1) | IL300758A (https=) |
| WO (1) | WO2022043165A1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022008306A1 (en) * | 2020-07-09 | 2022-01-13 | Basf Se | Composition comprising a siloxane and an alkane for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below |
| KR20250148723A (ko) * | 2023-03-24 | 2025-10-14 | 후지필름 가부시키가이샤 | 처리액, 처리 방법 |
| WO2025064429A1 (en) * | 2023-09-22 | 2025-03-27 | Entegris, Inc. | Etchant compositions and related methods |
| WO2026022021A1 (en) | 2024-07-25 | 2026-01-29 | Basf Se | Composition, its use and a process for selectively etching silicon-germanium layers |
| WO2026042511A1 (ja) * | 2024-08-20 | 2026-02-26 | 富士フイルム株式会社 | 薬液、被処理物の処理方法、半導体デバイスの製造方法 |
| CN119979170B (zh) * | 2024-12-13 | 2026-03-03 | 湖北兴福电子材料股份有限公司 | 一种适用于微电子器件从硅锗/硅叠层中相对于硅选择性去除硅锗的组合物 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11186771B2 (en) | 2017-06-05 | 2021-11-30 | Versum Materials Us, Llc | Etching solution for selectively removing silicon nitride during manufacture of a semiconductor device |
| US10879076B2 (en) | 2017-08-25 | 2020-12-29 | Versum Materials Us, Llc | Etching solution for selectively removing silicon-germanium alloy from a silicon-germanium/silicon stack during manufacture of a semiconductor device |
| US10934484B2 (en) | 2018-03-09 | 2021-03-02 | Versum Materials Us, Llc | Etching solution for selectively removing silicon-germanium alloy from a silicon-germanium/ germanium stack during manufacture of a semiconductor device |
| CN115651656B (zh) | 2018-12-03 | 2024-09-03 | 富士胶片电子材料美国有限公司 | 蚀刻组合物 |
| JP7450334B2 (ja) | 2018-12-27 | 2024-03-15 | 東京応化工業株式会社 | エッチング液、及び半導体素子の製造方法 |
-
2021
- 2021-08-18 KR KR1020237005999A patent/KR20230054674A/ko active Pending
- 2021-08-18 CN CN202180061341.8A patent/CN116195036A/zh active Pending
- 2021-08-18 US US18/042,315 patent/US20230326759A1/en active Pending
- 2021-08-18 JP JP2023513264A patent/JP7754920B2/ja active Active
- 2021-08-18 IL IL300758A patent/IL300758A/en unknown
- 2021-08-18 EP EP21762499.8A patent/EP4200895A1/en active Pending
- 2021-08-18 WO PCT/EP2021/072975 patent/WO2022043165A1/en not_active Ceased
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN115428169B (zh) | 用于电子产品的表面活性剂 | |
| US12300498B2 (en) | Formulations to selectively etch silicon-germanium relative to silicon | |
| JP2006515933A5 (https=) | ||
| JP7695316B2 (ja) | 半導体素子製造時に窒化ケイ素を選択的に除去するためのエッチング組成物及びエッチング方法 | |
| JP2022130361A (ja) | 半導体基板の残渣を除去するための洗浄用調合物 | |
| JP7754920B2 (ja) | ケイ素－ゲルマニウム材料の選択的エッチングのための組成物、その使用及び方法 | |
| WO2001081525A1 (en) | Detergent composition | |
| JP2025506823A (ja) | シリコン－ゲルマニウム材料を選択的にエッチングするための組成物、その使用方法及び方法 | |
| JPWO2022043165A5 (https=) | ||
| CN115461429A (zh) | 用于电子产品的表面活性剂 | |
| JP2023184483A5 (https=) | ||
| JPWO2020166702A5 (https=) | ||
| JP7507155B2 (ja) | フッ素化アミンオキシド界面活性剤 | |
| CN114273320A (zh) | 一种半导体晶圆干刻后清洗工艺 | |
| JP2808799B2 (ja) | 窒化シリコン膜のエッチング方法 | |
| JPWO2021067150A5 (https=) | ||
| KR101621546B1 (ko) | 액정표시장치용 어레이 기판의 제조 방법 | |
| TWI903679B (zh) | 用於電子技術之界面活性劑 | |
| US20250109332A1 (en) | Composition, its use and a process for selectively etching silicon-germanium material | |
| EP4508676A1 (en) | Formulated alkaline chemistry for polysilicon exhume | |
| CN121969714A (zh) | 用于电子产品的表面活性剂 | |
| WO2026022021A1 (en) | Composition, its use and a process for selectively etching silicon-germanium layers | |
| JP4078971B2 (ja) | タンタル溶解用組成物及びそれを用いた溶解方法 | |
| WO2025034841A1 (en) | Surfactants for electronics | |
| JP2001332527A (ja) | Ｃｍｐ後洗浄液組成物 |